Patent application number | Description | Published |
20080198657 | NON-VOLATILE SEMICONDUCTOR MEMORY HAVING MULTIPLE EXTERNAL POWER SUPPLIES - A memory device includes core memory such as flash memory for storing data. The memory device includes a first power input to receive a first voltage used to power the flash memory. Additionally, the memory device includes a second power input to receive a second voltage. The memory device includes power management circuitry configured to receive the second voltage and derive one or more internal voltages. The power management circuitry supplies or conveys the internal voltages to the flash memory. The different internal voltages generated by the power management circuitry (e.g., voltage converter circuit) and supplied to the core memory enable operations such as read/program/erase with respect to cells in the core memory. | 08-21-2008 |
20080201496 | REDUCED PIN COUNT INTERFACE - An arrangement of memory devices and a controller is based on an interface with a reduced pin count relative to a known memory device and controller arrangement. Facilitating the reduced pin count interface are some operations performed by the controller. The controller determines a width for a Data bus while assigning a target device address to each of the memory devices. | 08-21-2008 |
20090154629 | CLOCK REPRODUCING AND TIMING METHOD IN A SYSTEM HAVING A PLURALITY OF DEVICES - A system includes a memory controller and a plurality of semiconductor devices that are series-connected. Each of the devices has memory core for storing data. The memory controller provides a clock signal for synchronizing the operations of the devices. Each device includes a phase-locked loop (PLL) that is selectively enabled or disabled by a PLL enable signal. In each group, the PLLs of a selected number of devices are enabled by PLL enable signals and the other devices are disabled. The enabled PLL provides a plurality of reproduced clock signals with a phase shift of a multiple of 90° in response to an input clock signal. The data transfer is synchronized with at least one of the reproduced clock signals. In the devices of disabled PLLs, the data transfer is synchronized with the input clock signal. The enabled PLL and disabled PLL cause the devices to be the source and the common synchronous clocking, respectively. The devices can be grouped. The devices of one group can be structured by multiple chip packages. | 06-18-2009 |
20100110794 | NON-VOLATILE SEMICONDUCTOR MEMORY HAVING MULTIPLE EXTERNAL POWER SUPPLIES - A memory device includes core memory such as flash memory for storing data. The memory device includes a first power input to receive a first voltage used to power the flash memory. Additionally, the memory device includes a second power input to receive a second voltage. The memory device includes power management circuitry configured to receive the second voltage and derive one or more internal voltages. The power management circuitry supplies or conveys the internal voltages to the flash memory. The different internal voltages generated by the power management circuitry (e.g., voltage converter circuit) and supplied to the core memory enable operations such as read/program/erase with respect to cells in the core memory. | 05-06-2010 |
20100162053 | ERROR DETECTION METHOD AND A SYSTEM INCLUDING ONE OR MORE MEMORY DEVICES - A system including one or more memory devices, and an error detection and correction method are disclosed. A memory device of the system includes an input for receiving a packet. A first portion of the packet may include at least one command byte, and a second portion of the packet may include parity bits to facilitate command error detection. The memory device may include an error manager configured to detect, based on the parity bits, whether an error exists in the at least one command byte, and circuitry configured to provide the packet to the error manager. | 06-24-2010 |
20100201397 | TERMINATION CIRCUIT FOR ON-DIE TERMINATION - In a semiconductor device having a terminal connected to an internal portion, a termination circuit for providing on-die termination for the terminal of the device. The termination circuit comprises a plurality of transistors, including at least one NMOS transistor and at least one PMOS transistor, connected between the terminal and a power supply; and control circuitry for driving a gate of each of NMOS transistor with a corresponding NMOS gate voltage and for driving a gate of each PMOS transistor with a corresponding PMOS gate voltage, the control circuitry being configured to control the NMOS and PMOS gate voltages so as to place the transistors in an ohmic region of operation when on-die termination is enabled. The power supply supplies a voltage that is less than each said NMOS gate voltage and greater than each said PMOS gate voltage. | 08-12-2010 |
20100296256 | CONFIGURABLE MODULE AND MEMORY SUBSYSTEM - A configurable memory subsystem includes a memory module with a circuit board having a first and a second memory-containing device (MCD) pair mounted thereto. Each MCD pair has a first MCD in communication with a second MCD. Each MCD has an input port, an output port, and a memory each communicating with a bridge. In response to a command, the bridge transfers at least one of a portion of a data packet from the input port to the output port or to the memory, or transfers a portion of a memory packet from the memory to the output port. A loop-back device receives the command and the data packet form the first MCD pair and transmits the command and data packet to the second MCD pair. | 11-25-2010 |
20110016282 | SYNCHRONOUS MEMORY READ DATA CAPTURE - A method of snap-shot data training to determine the optimum timing of the DQS enable signal in a single read operation is provided. This is accomplished by first writing a Gray code count sequence into the memory and then reading it back in a single burst. The controller samples the read burst at a fixed interval from the time the command was issued to determine the loop-around delay. A simple truth table lookup determines the optimum DQS enable timing for normal reads. Advantageously, during normal read operations, the first positive edge of the enabled DQS signal is used to sample a counter that is enabled every time a command is issued. If the counter sample changes, indicating timing drift has occurred, the DQS enable signal can be adjusted to compensate for the drift and maintain a position centered in the DQS preamble. This technique can also be applied to a system that uses the iterative approach to determining DQS enable timing on power up. Another embodiment of the invention is a simple, low latency clock domain crossing circuit based on the DQS latched sample of the counter. | 01-20-2011 |
20110199820 | NON-VOLATILE SEMICONDUCTOR MEMORY HAVING MULTIPLE EXTERNAL POWER SUPPLIES - A memory device includes core memory such as flash memory for storing data. The memory device includes a first power input to receive a first voltage used to power the flash memory. Additionally, the memory device includes a second power input to receive a second voltage. The memory device includes power management circuitry configured to receive the second voltage and derive one or more internal voltages. The power management circuitry supplies or conveys the internal voltages to the flash memory. The different internal voltages generated by the power management circuitry (e.g., voltage converter circuit) and supplied to the core memory enable operations such as read/program/erase with respect to cells in the core memory. | 08-18-2011 |
20110208906 | SEMICONDUCTOR MEMORY DEVICE WITH PLURAL MEMORY DIE AND CONTROLLER DIE - A semiconductor memory device including a plurality of memory die and a controller die. The controller die is connected to an internal control bus. The controller die is configured to provide to a selected one of the memory die an internal read command responsive to an external read command. The selected memory die is configured to provide read data to the controller in response to the internal read command; wherein latency between receipt by the controller die of the external read command and receipt of the read data from the selected memory die differs for at least two of the memory die when selected as the selected memory die. | 08-25-2011 |
20120126849 | TERMINATION CIRCUIT FOR ON-DIE TERMINATION - In a semiconductor device having a terminal connected to an internal portion, a termination circuit for providing on-die termination for the terminal of the device. The termination circuit comprises a plurality of transistors, including at least one NMOS transistor and at least one PMOS transistor, connected between the terminal and a power supply; and control circuitry for driving a gate of each of NMOS transistor with a corresponding NMOS gate voltage and for driving a gate of each PMOS transistor with a corresponding PMOS gate voltage, the control circuitry being configured to control the NMOS and PMOS gate voltages so as to place the transistors in an ohmic region of operation when on-die termination is enabled. The power supply supplies a voltage that is less than each said NMOS gate voltage and greater than each said PMOS gate voltage. | 05-24-2012 |
20120137030 | REDUCED PIN COUNT INTERFACE - An arrangement of memory devices and a controller is based on an interface with a reduced pin count relative to a known memory device and controller arrangement. Facilitating the reduced pin count interface are some operations performed by the controller. The controller determines a width for a Data bus while assigning a target device address to each of the memory devices. | 05-31-2012 |
20130033941 | Non-Volatile Semiconductor Memory Having Multiple External Power Supplies - A memory device includes core memory such as flash memory for storing data. The memory device includes a first power input to receive a first voltage used to power the flash memory. Additionally, the memory device includes a second power input to receive a second voltage. The memory device includes power management circuitry configured to receive the second voltage and derive one or more internal voltages. The power management circuitry supplies or conveys the internal voltages to the flash memory. The different internal voltages generated by the power management circuitry (e.g., voltage converter circuit) and supplied to the core memory enable operations such as read/program/erase with respect to cells in the core memory. | 02-07-2013 |
20140104954 | NON-VOLATILE SEMICONDUCTOR MEMORY HAVING MULTIPLE EXTERNAL POWER SUPPLIES - A memory device includes core memory such as flash memory for storing data. The memory device includes a first power input to receive a first voltage used to power the flash memory. Additionally, the memory device includes a second power input to receive a second voltage. The memory device includes power management circuitry configured to receive the second voltage and derive one or more internal voltages. The power management circuitry supplies or conveys the internal voltages to the flash memory. The different internal voltages generated by the power management circuitry (e.g., voltage converter circuit) and supplied to the core memory enable operations such as read/program/erase with respect to cells in the core memory. | 04-17-2014 |
20140341328 | CLOCK REPRODUCING AND TIMING METHOD IN A SYSTEM HAVING A PLURALITY OF DEVICES - A system includes a memory controller and a plurality of semiconductor devices that are series-connected. Each of the devices has memory core for storing data. The memory controller provides a clock signal for synchronizing the operations of the devices. Each device includes a phase-locked loop (PLL) that is selectively enabled or disabled by a PLL enable signal. In each group, the PLLs of a selected number of devices are enabled by PLL enable signals and the other devices are disabled. The enabled PLL provides a plurality of reproduced clock signals with a phase shift of a multiple of 90° in response to an input clock signal. The data transfer is synchronized with at least one of the reproduced clock signals. In the devices of disabled PLLs, the data transfer is synchronized with the input clock signal. The enabled PLL and disabled PLL cause the devices to be the source and the common synchronous clocking, respectively. The devices can be grouped. The devices of one group can be structured by multiple chip packages. | 11-20-2014 |