| Patent application number | Description | Published |
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| 20090250238 | METAL SHEATHED CABLE ASSEMBLY - A Metal-Clad cable that includes at least two conductor assemblies within a metal armored sheath. Each conductor assembly has an electrical conductor, an insulation layer extending around and along the length of each of the electrical conductors, a jacket layer disposed around the insulating layer and a polymeric protective layer disposed around the jacket layer along the length of each of the electrical conductors. A grounding/bonding strip is disposed within the cable and is in intimate contact with an interior surface of the metal sheath. If a grounding conductor is used, it is either in cabled relationship with the two conductor assemblies or is disposed along the length of the electrical conductors and the metal sheath is disposed over the at least two conductor assemblies and the grounding conductor. | 10-08-2009 |
| 20090250239 | METAL SHEATHED CABLE ASSEMBLY - An AC cable that includes at a plurality of conductor assemblies within a metal armored sheath. Each conductor assembly has an electrical conductor, an insulation layer extending around and along the length of each of the electrical conductors, a jacket layer disposed around the insulating layer and a polymeric protective layer disposed around the jacket layer along the length of each of the electrical conductors. A bonding strip is disposed within the metal sheath and is in contact with the interior surface of the metal sheath to provide an electrical low-impedance fault return path for the AC cable. | 10-08-2009 |
| 20120073855 | METAL SHEATHED CABLE ASSEMBLY - A Metal-Clad cable that includes at least two conductor assemblies within a metal armored sheath. Each conductor assembly has an electrical conductor, an insulation layer extending around and along the length of each of the electrical conductors, a jacket layer disposed around the insulating layer and a polymeric protective layer disposed around the jacket layer along the length of each of the electrical conductors. A grounding/bonding strip is disposed within the cable and is in intimate contact with an interior surface of the metal sheath. If a grounding conductor is used, it is either in cabled relationship with the two conductor assemblies or is disposed along the length of the electrical conductors and the metal sheath is disposed over the at least two conductor assemblies and the grounding conductor. | 03-29-2012 |
| Patent application number | Description | Published |
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| 20090185352 | HIGH PERFORMANCE POWER DEVICE - A printed circuit board (PCB) assembly is provided. The PCB assembly is adapted for mounting at least one heat-generating electrical device and providing integrated heat dissipating capability to dissipate heat generated by the electrical device. The PCB assembly has a top surface and a bottom surface and comprises a signal carrying layer and an insert of pyrolytic graphite (PG). The signal carrying layer, disposed between the top surface and the bottom surface, comprises a material that is both thermally conductive and electrically conductive (such as at least one of aluminum, copper, and silver and alloys thereof) and has at least a portion lying in a first plane. The insert of PG is disposed within at least a portion of the first plane of the signal carrying layer, is in thermal contact with the signal carrying layer, and is constructed and arranged to have its greatest electrical conductivity in the first plane. Optionally, a conductive via can be formed in portions of the signal carrying layer not occupied by the insert of PG, where the conductive via operably couples a first side of the signal carrying layer to a second side of the signal carrying layer. | 07-23-2009 |
| 20100155900 | FABRICATING A GALLIUM NITRIDE DEVICE WITH A DIAMOND LAYER - In one aspect, a method includes fabricating a device. The device includes a gallium nitride (GaN) layer, a diamond layer disposed on the GaN layer and a gate structure disposed in contact with the GaN layer and the diamond layer. | 06-24-2010 |
| 20100155901 | FABRICATING A GALLIUM NITRIDE LAYER WITH DIAMOND LAYERS - In one aspect, a method includes fabricating a gallium nitride (GaN) layer with a first diamond layer having a first thermal conductivity and a second diamond layer having a second thermal conductivity greater than the first thermal conductivity. The fabricating includes using a microwave plasma chemical vapor deposition (CVD) process to deposit the second diamond layer onto the first diamond layer. | 06-24-2010 |
| 20100187544 | FABRICATING A GALLIUM NITRIDE LAYER WITH DIAMOND LAYERS - In one aspect, a method includes fabricating a gallium nitride (GaN) layer with a first diamond layer having a first thermal conductivity and a second diamond layer having a second thermal conductivity greater than the first thermal conductivity. The fabricating includes using a microwave plasma chemical vapor deposition (CVD) process to deposit the second diamond layer onto the first diamond layer. | 07-29-2010 |
| 20100245179 | Method and Apparatus for Thermal Management of a Radio Frequency System - A thermal management system includes an air duct assembly comprising a supply air duct having an air inlet opening, a return air duct having an air exit opening and a plurality of distribution air ducts configured to be in fluid communication with the air inlet opening of the supply air duct and with the air exit opening of the return air duct. A fan is disposed within the air duct assembly to direct air from the air inlet opening of the supply air duct through the supply air duct and out the air exit opening of the return air duct. The fan and supply duct are disposed to direct air over a first surface of a heat sink. A second opposing surface of the heat sink is disposed over and configured to be in thermal contact with a plurality of active circuits disposed on a first surface of a radio frequency (RF) multi-layer printing wiring board (PWB). | 09-30-2010 |
| 20110241018 | FABRICATING A GALLIUM NITRIDE DEVICE WITH A DIAMOND LAYER - In one aspect, a method includes fabricating a device. The device includes a gallium nitride (GaN) layer, a diamond layer disposed on the GaN layer and a gate structure disposed in contact with the GaN layer and the diamond layer. | 10-06-2011 |
| 20120139786 | Mobile Radar System - Described is a mobile radar system which provides both persistent surveillance and tracking of objects with adaptive measurement rates for both maneuvering and non-maneuvering objects. The mobile radar system includes a vehicle having mounted therein an active, electronically-steerable, phased array radar system movable between a stowed position and a deployed position and wherein the phased array radar system is operational in both the deployed and stored positions and also while the vehicle is either stationary or moving. Thus, the mobile radar system described herein provides for longer time on target and longer integration times, increased radar sensitivity and improved Doppler resolution and clutter rejection. This results in a highly mobile radar system appropriate for use in a battlefield environment and which supports single-integrated-air-picture metrics including but not limited to track purity, track completeness, and track continuity and thus improved radar performance in a battlefield. | 06-07-2012 |
