Patent application number | Description | Published |
20140140314 | Methods and Apparatuses for Provision of a Downlink Synchronization Group During Discontinuous Transmission in an Unlicensed Band - A method, apparatus and computer program product are provided for generating a downlink synchronization group utilized during a discontinuous transmission in an unlicensed band. A method and apparatus may determine a carrier(s) providing a signal(s) enabling timing and frequency tracking a downlink carrier(s) within a downlink synchronization group to devices responsive to discontinuous transmission via a medium(s) of an unlicensed band on a secondary component carrier. The medium(s) previously utilized to provide content to a device(s). The method and apparatus may also provide an indication of the carrier(s) to the device notifying the device that information of the signal is receivable via the carrier on the unlicensed band. The method and apparatus may also send the signal(s) to the device via the carrier enabling the device to obtain timing and frequency information. | 05-22-2014 |
20140348040 | Semi-Full-Duplex Single-Carrier Transmission Technique - There are provided measures for enabling a semi-full-duplex single-carrier transmission technique. Such measures may exemplarily comprise classifying each one of served terminals into one of two transmission groups, assigning an uplink-downlink configuration of a frame structure for time division duplex communication for each one of the two transmission groups such that uplink subframes for one transmission group and downlink subframes of the other transmission group coincide with each other, and scheduling uplink and downlink transmissions for the served terminals on a single carrier according to the assigned uplink-downlink configurations for the two transmission groups. | 11-27-2014 |
20140376483 | Control Mechanism for Communication Via Different Frequency Bands - There is provided a mechanism for controlling communications conducted via different frequency bands or communication spectrums. When a communication via a first communication path, for example an unlicensed or white space communication spectrum, is to be established, e.g. for offloading traffic from a second communication path, for example a licensed cellular communication spectrum, a preamble transmission command is generated and transmitted from a communication network control element, such as an eNB, via the second communication path to a communication element, such as a UE. By means of the preamble transmission command, the transmission of a preamble signal by the receiving communication element on the first communication path with predetermined communication resources is triggered. Based on a receipt or non-receipt of the preamble signal via the first communication path, the communication network control element is able to determine that the communication element can establish a connection on the first communication path, for example the unlicensed or white space communication spectrum. | 12-25-2014 |
20150043520 | Methods and Apparatuses for Provision of Reference Signal Design for Downlink Tracking in Occupied Shared Band - A method, apparatus and computer program product are provided for generating Reference Signals utilized in downlink tracking of an unlicensed band. A method and apparatus may determine whether carriers of an unlicensed band secondary component carrier are available for usage to provide a signal(s), enabling timing and frequency tracking of downlink carriers responsive to discontinuous transmission via a medium(s) of the unlicensed band utilized to provide content to devices. The method and apparatus may also select the signal based on a band of the carriers and a detection indicating whether communication terminals of a coexisting system are using a carrier of the band. The method and apparatus may provide the signal to a device(s) via a carrier responsive to determining that the carrier is available or via an occupied carrier utilized by the coexisting system enabling the device to continue tracking of timing and frequency information of the downlink carriers. | 02-12-2015 |
20150049624 | Method and Apparatus for Reducing Radio Interferences - The present application relates generally to use of radio resources in a radio access network (RAN) and, in more specific, Full-Duplex (FD) transmission on the same carrier. Due to the mobility of the UEs or the non-optimal grouping, two UEs belonging to different groups may be close to each other while performing transmission and cause serious transmission interferences to 5 each other. This is one of the problems which a method in accordance with the invention aims to solve. When the performing the method a RAN triggers a UE to measure | 02-19-2015 |
20150071146 | Aperiodical Discovery Channel Design for Small RRHS - An apparatus and a method is provided by which it is determined that at least one user equipment should perform detection and/or measurements with respect to at least one network control node, the at least one network control node is instructed to send a predetermined aperiodic signal to the at least one user equipment, and the at least one user equipment is instructed to detect the predetermined aperiodic signal. | 03-12-2015 |
20150085659 | Method and Apparatus For Offloading Data - A method, apparatus and computer program product are provided for enabling efficient allocation of discovery resources for device to device communications. An example method may comprise establishing a cellular network connection to an access point. The method may further comprise establishing a local area network connection to a user equipment. Additionally, the method may comprise either receiving offloaded data for the user equipment from the access point via the cellular network connection and relaying the offloaded data to the user equipment via the local area network connection, or receiving offloaded data for the access point from the user equipment via the local area network connection and relaying the offloaded data to the access point via the cellular network connection. Similar and related example methods, example apparatuses, and example computer program products are also provided. | 03-26-2015 |
20150195770 | MECHANISM FOR DISCOVERY OF SMALL CELLS - There is proposed a mechanism for controlling and conducting a discovery procedure of small cells or secondary cells located in a macro cell or primary cell. The discovery procedure is based on a discovery signal communicated via PDCH and based on a positioning reference signal (PRS). For configuring the signaling of the discovery signal, frequency domain multiplexing for splitting resources of the PRS in the frequency domain for increasing capacity, and/or usage of reserved communication resources for the signaling of the discovery signal are employed. Assistance information is provided to the UE for supporting the discovery of small cells. | 07-09-2015 |
20150257095 | TRANSITION METHOD INTO SLEEPING MODE - It is provided a method, comprising camping on a first cell in a terminal mode, wherein, in the terminal mode, a mode-enabling downlink signal from the first cell is required; checking if a transition information about an intended transition of the first cell to a sleeping mode is received and if an apparatus performing the method camps in the terminal mode on the first cell, wherein in the sleeping mode of the first cell the mode-enabling downlink signal is not received from the first cell; transmitting a complaint to the first cell if the transition information is received and the apparatus camps in the terminal mode on the first cell. | 09-10-2015 |
20150264609 | METHOD AND APPARATUS FOR MANAGING HANDOVERS - A method, apparatus, and computer program product are provided to manage handover procedures in a dual connection context. In the context of a method, a macro access point (MAP) may initiate a handover between a source and destination local area access point (LAAP) by causing a handover request to be transmitted to the destination LAAP. The method may further involve causing a handover command to be transmitted to a user equipment (UE), causing a data transfer inform message to be transmitted to the source LAAP, and receiving a UE context release message from the destination LAAP. In the context of another method, a LAAP may initiate a handover. The method may involve receiving a dual connection transfer request message from a source LAAP, receiving a dual connection transfer request acknowledge message from a destination LAAP and receiving a Path Switch Successful indication from a Mobility Management Entity. | 09-17-2015 |
20150264652 | LOW-POWER ALMOST BLANK SUBFRAME (ABS) IN HETEROGENEOUS NETWORKS - An aggressor access node in a heterogeneous network sends to a victim access node a pattern of transmit power for designated low-interference subframes (e.g., LP-ABSs). Utilizing feedback information collected from the victim node which quantizes interference seen by user equipments (UEs) which are allocated at least some of those subframes, the aggressor node selects whether and how much to adjust transmit power for subsequent such subframes, then sends to the victim node a pattern of the adjusted transmit power for those subsequent subframes (e.g., an enhancement to relative narrowband transmit power RNTP). The victim node sends to UEs the pattern of transmit power and respective resource allocations in those designated low-interference subframes; then derives interference level per UE in those subframes based on channel quality indications received from the respective UEs; and sends to the aggressor access node feedback information which quantizes the derived interference levels. | 09-17-2015 |
20150280881 | CONTROL CHANNEL CONFIGURATION FOR STAND-ALONE NEW CARRIER TYPE - A user equipment UE determines at least one first set SI of physical resource blocks PRBs, and detects downlink signaling within search spaces of set(s) SI. Through that downlink signaling the UE obtains a configuration for a downlink control channel, and that configuration indicates at least one second set S | 10-01-2015 |
20150282239 | METHOD AND APPARATUS FOR MANAGING DUAL CONNECTION ESTABLISHMENT - A method, apparatus, and computer program product are provided to manage the establishment of a dual connection. A method according to an example embodiment may include causing a dual connection setup request message to be transmitted to a local area access point (LAAP) and causing a dual connection command to be transmitted to a user equipment (UE). The method further includes receiving a dual connection establishment complete message and causing resources associated with one or more split bearers to be released or suspended. | 10-01-2015 |
20150288483 | METHOD, eNB, TERMINAL AND SYSTEM FOR ADAPTIVELY ADJUSTING MODULATION CODING SCHEME AND REFERENCE SIGNAL PATTERN - A method for adaptively adjusting a modulation coding scheme and a reference signal pattern. The method includes: determining a Modulation Coding and Reference Signal Pattern Scheme (MCPS) index according to channel status information, the MCPS being used for indicating a reference signal pattern, a modulation scheme and/or a modulation order and TBS; performing communication according to the reference signal pattern, modulation scheme and/or modulation order and TBS corresponding to the MCPS index. Another example of the present disclosure further provides a corresponding eNB, terminal and system. With examples of the present disclosure, the reference signal pattern and modulation coding scheme may be adaptively and jointly adjusted according to requirements to obtain the optimal transmission efficiency. | 10-08-2015 |
20150289292 | DATA TRANSMISSION METHOD, BASE STATION, AND TERMINAL - A data transmission method is provided. The method includes obtaining configuration information, wherein the configuration information indicates transmission resources of a random access preamble and payload data corresponding to the random access preamble, transmitting the random access preamble and the payload data at the transmission resources, modulating the payload data using a modulation scheme supporting asynchronous transmission, and receiving feedback information, wherein the feedback information comprises an indication which indicates whether the payload data is successfully received. Various examples of the present disclosure also describe a method for receiving data with space multiplexing which is applied to a base station side, and further describe a terminal and a base station. Employing the examples of the present disclosure, transmission efficiency of long duty cycle and sporadic small data packets of a large number of devices in the Internet of Things in future communication systems can be improved. | 10-08-2015 |
20150304921 | METHODS, DEVICES, AND COMPUTER PROGRAM PRODUCTS IMPROVING MOBILE COMMUNICATION - The present invention relates to devices, methods and computer program products concerning a communication link in, for example, a so-called unlicensed band. The invention proposes an apparatus, comprising: a control module configured to control a transceiver being controllable to use at least one of at least two transmission resources for communication with a respective other apparatus, wherein a first transmission resource is useable for a direct communication with another apparatus of a first type and a second transmission resource is useable for a communication with one of plural other apparatuses of a second type each linked to the other apparatus of the first type, determine whether communication is setup via one of the plural other apparatuses of the second type, and, in response thereto, obtain information for deciding to switch the communication to another one of the apparatuses of the second type, evaluate the information obtained, and, cause to decide to switch the communication to one other apparatus of the second type. | 10-22-2015 |
20150304932 | SMALL CELL INITIAL ACCESS AND PHYSICAL CELL IDENTITY DETERMINATION - A method, system, and computer program product that provides a two-index system for clusters of small cells in a wireless network. A first index is employed for access to and identification of a serving cell within a cluster of small cells. A second index indicates a group of small cells for determining mobility control. The first index may be derived from primary/secondary synchronization signals, or from frequency/time division multiplex signal position. The second index may be indicated in system/master information block signals or predefined as a plurality of small cells identified by the first index for each cell. Determination of physical cell identification is aided by providing a plurality of primary/secondary synchronization (PSS/SSS) signal alternating configurations with indicator, wherein a maximum number of configurations is predefined. Signaling the PSS/SSS configurations by one of broadcast or dedicated signaling, said signaling indicating whether each configuration is one of periodic or aperiodic alternation. | 10-22-2015 |
20150305065 | RANDOM ACCESS PROCEDURE AND RELATED APPARATUS - A new random access procedure is introduced that does not use a timing advance for the uplink timing but instead uses the downlink timing for uplink timing. This is particularly viable when the propagation delay is short, for example with local area cells having a coverage range less than some predetermined threshold. From the mobile terminal's perspective it obtains downlink timing for a cell, transmits a scheduling request SR in a contention-based uplink resource, and in response to receiving an uplink resource allocation it transmits in the allocated uplink resource using the downlink timing. The terminal can get the configuration for that contention-based uplink resource from system information. From the uplink resource the terminal and network determines a SR-RNTI, which the network uses to address the uplink resource allocation and the terminal uses to find a pre-defined search space in which to look for that uplink resource allocation. | 10-22-2015 |
20150358838 | BUFFER STATUS REPORTING FOR DUAL CONNECTION - Apparatus, methods, and computer programs that selectively transmit one or more local area buffer status reports by a macro base station over a macro link or transmit a macro buffer status report by a local area access point over a local area link in a dual connection deployment scenario in response to a cross link buffer status report trigger. The apparatus, methods and computer programs may include several cross buffer status reporting triggers. The user equipment may trigger cross buffer status reporting in response or incidental to one or more measurement events. The user equipment may also trigger cross buffer status reporting in response to or incidental to a link failure. The user equipment may also trigger cross buffer status reporting in response to receiving a request from an eNB. | 12-10-2015 |
20150365849 | HANDOVER PROCEDURE BETWEEN LOCAL AREA CELLS WHICH ARE UNDER THE SAME COVERAGE OF A MACRO CELL - An apparatus and a method is provided, by which a first type cell is controlled, wherein a plurality of second type cells are located in the same area as the first type cell, wherein control signal transmission to at least one user equipment is carried out via the first type cell and data transmission to the at least one user equipment is carried out via one of a plurality of the second type cells, and handover of data transmission of a user equipment from a source cell being one of the plurality of second type cells to a target cell being another one of the plurality of second type cells is controlled. Moreover, also an apparatus and a method of e.g., a user equipment are provided, by which a handover of data transmission from a source cell being one of the plurality of second type cells to a target cell being another one of the plurality of second type cells is performed, while maintaining control signal transmission with the first type cell. | 12-17-2015 |
20150365854 | ADDRESSING COMMUNICATION FAILURE IN MULTIPLE CONNECTION SYSTEMS - Systems and techniques for link failure management in multiple connection systems. Upon detection of a link failure with a local area base station during a dual connection mode in which the user device is connected to a macro base station and a local area base station, a user device sends a failure indication and a measurement results report for serving and neighboring base stations to its serving macro base station, and selects a response to the failure based at least in part on evaluation information received from the macro base station. Upon detection of a link failure with a macro base station, the user device determines whether to reconnect to the macro base station or a different macro base station and whether to reconnect with the original local area base station or a different local area base station. | 12-17-2015 |
20150365857 | MEASUREMENTS IN MULTIPLE CONNECTION SYSTEMS - Systems and techniques for link condition reporting in multiple connection systems. A base station, such as a macro eNodeB (eNB) configures measurement objects and reporting objects for macro and local area links for a user device such as a user equipment (UE). The objects relating to the secondary links are configured for use when the user device is operating in a dual connection mode. Upon detection of a triggering event when the user device is in dual connection mode, the user device reports macro and secondary link information. In some embodiments of the invention, triggering may be based on events related to a specified frequency group, or may be direct measurements related to a specified frequency group. | 12-17-2015 |
20150365894 | METHODS AND APPARATUSES FOR DISCONTINUOUS RECEPTION - A method, apparatus and computer program product are provided for minimizing power consumption in a macro cell. A method and apparatus may establish a dual connection with a local area access point of a local area cell and a macro access point of a macro cell. The method and apparatus may also enter a power save mode in a macro cell by utilizing a first discontinuous reception (DRX) pattern in the macro cell in response to establishing the dual connection. The first DRX pattern may include a designated DRX active time period in which a communication device is designated to be active. The DRX active time period is aligned with a time period of a paging occasion of the apparatus. | 12-17-2015 |
20150373629 | DORMANT CELL DETECTION AND REPORT CONFIGURATION - It is provided a method, comprising checking if an indication is received that another cell device will remain in an active state and not enter into a dormant state for a time interval, wherein, in the dormant state, a cell specific reference signal is transmitted less frequently than in the active state; providing a request not to report a detection of an identification signal of the other cell device for the time interval if the indication is received. | 12-24-2015 |
20160037523 | CARRIER ALLOCATION - The present invention relates to methods, apparatuses and a computer program product for carrier allocation. The invention includes defining change occasion for a base station for changing a component carrier. The invention further includes receiving, at a processor, from a first base station, information regarding carrier interference severeness between the first base station and a second base station, wherein the carrier interference severeness comprises at least one of an expected separately usable protected carrier number, the number of user equipments located in a common coverage area of the first and second base station, and the downlink traffic load related to the user equipments, and allocating carrier pattern for the first base station based on the received information. Further, the invention includes composing, by a part of a first base station, a report including information regarding carrier interference severeness between the first base station and a second base station, wherein the carrier interference severeness comprises at least one of an expected separately usable protected carrier number, the number of user equipments located in a common coverage area of the first and second base station, and the downlink traffic load related to the user equipment, and causing transmission of the report to an allocating unit. | 02-04-2016 |
20160056936 | METHOD AND SYSTEM FOR SENDING A REFERENCE SIGNAL, METHOD AND SYSTEM FOR RECEIVING A REFERENCE SIGNAL - A method and an apparatus for transmitting a reference signal. A first reference signal is generated according to a data signal, an interference relationship between adjacent carriers, and a predefined second reference signal. The data signal and the first reference signal is modulated and sent on a corresponding carrier utilizing non-orthogonal multi-carrier modulation waveform. A method for receiving a reference signal includes receiving, on a reference signal carrier, a first reference signal modulated utilizing non-orthogonal multi-carrier modulation waveform, processing the received first reference signal using a predefined processing method, performing channel estimation or synchronization according to a result of the processing and a predefined second reference signal. | 02-25-2016 |
20160065288 | Method and Apparatus for Obtaining Channel Direction Information - The present disclosure relates to a pre-5th-Generation (5G) or 5G communication system to be provided for supporting higher data rates Beyond 4th-Generation (4G) communication system such as Long Term Evolution (LTE). | 03-03-2016 |
Patent application number | Description | Published |
20120182063 | Power Device Using Photoelectron Injection to Modulate Conductivity and the Method Thereof - The present invention belongs to the technical field of semiconductor devices, and discloses a power device using photoelectron injection to modulate conductivity and the method thereof. The power device comprises at least one photoelectron injection light source and a power MOS transistor. The present invention uses photoelectron injection method to inject carriers to the drift region under the gate of the power MOS transistor, thus modulating the conductivity and further decreasing the specific on-resistance of the power MOS transistor. Moreover, as the doping concentration of the drift region can be decreased and the blocking voltage can be increased, the performance of the power MOS transistor can be greatly improved and the application of power MOS transistor can be expanded to high-voltage fields. | 07-19-2012 |
20120200342 | GATE CONTROLLED PN FIELD-EFFECT TRANSISTOR AND THE CONTROL METHOD THEREOF - The present invention belongs to the technical field of semiconductor devices, and more specifically, relates to a gate-controlled PN field-effect transistor and the control method thereof The gate-controlled PN field-effect transistor disclosed by the present invention comprises a semiconductor substrate region, a drain region and a source region on the left and right sides of the substrate region, and gate regions on the upper and lower sides of the substrate region. The gate-controlled PN field-effect transistor works in the positive bias state of the source-drain PN junction and is conducted from the middle of the substrate region. The gate-controlled PN field-effect transistor provided by the present invention decreases the leakage current and increases the drive current at the same time, namely decreases the chip power consumption and improves the chip performances at the same time. The present invention further discloses a method for controlling the gate-controlled PN field-effect transistor, including cut-off and conduction operation. | 08-09-2012 |
20120261669 | PHOTO DETECTOR CONSISTING OF TUNNELING FIELD-EFFECT TRANSISTORS AND THE MANUFACTURING METHOD THEREOF - The present invention belongs to the technical field of optical interconnection and relates to a photo detector, in particular to a photo detector consisting of tunneling field-effect transistors. | 10-18-2012 |
20120261744 | MICROELECTRONIC DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF - The present invention refers to a semiconductor device especially a tunneling filed effect transistor (TFET) using narrow bandgap material as the source electrode material. A Semiconductor device which is a tunneling field effect transistor type semiconductor device, in which the source material is characterized as narrow band-gap material; meanwhile, there is a u-groove channel. The narrow band-gap material results in a raise of driving current and the u-groove channel reduced drain leakage current. The TFET disclosed in to present invention has the advantages of low leakage current, high drive current, and high integration density. The static power consumption is also reduced by using the present invention. The integration density is improved as well. | 10-18-2012 |
20120273866 | Semiconductor Memory Device with a Buried Drain and Its Memory Array - A semiconductor memory device with a buried drain is provided. The device comprises a semiconductor substrate ( | 11-01-2012 |
20120305880 | RESISTIVE RANDOM ACCESS MEMORY WITH ELECTRIC-FIELD STRENGTHENED LAYER AND MANUFACTURING METHOD THEREOF - This invention belongs to the technical field of memories and specifically relates to a resistive random access memory structure with an electric-field strengthened layer and a manufacturing method thereof. The resistive random access memory in the present invention can include a top electrode, a bottom electrode and a composite layer which is placed between the top electrode and the bottom electrode and have a first resistive switching layer and a second resistive switching and electric-field strengthened layer; the second resistive switching and electric-field strengthened layer cab be adjacent to the first resistive switching layer and have a dielectric constant lower than that of the first resistive switching layer. The electric-field distribution in the RRAM unit is adjustable. | 12-06-2012 |
20120305882 | NiO-based Resistive Random Access Memory and the Preparation Method Thereof - The present invention belongs to the technical field of memory storage and specially relates to a NiO-based resistive random access memory system (RRAM) and a preparation method thereof. The RRAM is comprised of a substrate and a metal-insulator-metal (MIM) structure, wherein the electrodes are metal films, such as copper, aluminum, etc., capable of being applied to the interconnection process, and the resistive switching insulator is an Al | 12-06-2012 |
20120309118 | SILICON WAFER ALIGNMENT METHOD USED IN THROUGH-SILICON-VIA INTERCONNECTION - A method of silicon wafer alignment used in through-silicon-via interconnection for use in the field of high-integrity packaging technology is disclosed. In one aspect, the method includes aligning and calibrating the upper and lower silicon wafers, stacked and interconnected electrically, so as to improve alignment accuracy of silicon wafers and reduce interconnection resistances. In some embodiments, the integrated circuit chip made by the method improves speed and energy performance. | 12-06-2012 |
20130056848 | INDUCTIVE LOOP FORMED BY THROUGH SILICON VIA INTERCONNECTION - The present invention discloses an inductive element formed by through silicon via interconnections. The inductive element formed by means of the special through silicon via interconnection by using through silicon via technology features advantages such as high inductance and density. Moreover, the through silicon via interconnection integrated process forming the inductive element is compatible with the ordinary through silicon interconnection integrated process without any other steps, thus making the process simple and steady. The inductive element using the present invention is applicable to the through silicon via package manufacturing of various chips, especially the package manufacturing of power control chips and radio-frequency chips. | 03-07-2013 |
20130065365 | Method for Manufacturing Semiconductor Substrate of Large-power Device - The invention belongs to the technical field of high-voltage, large-power devices and in particular relates to a method for manufacturing a semiconductor substrate of a large-power device. According to the method, the ion implantation is carried out on the front face of a floating zone silicon wafer first, then a high-temperature resistant metal is used as a medium to bond the back-off floating zone silicon wafer, and a heavily CZ-doped silicon wafer forms the semiconductor substrate. After bonding, the floating zone silicon wafer is used to prepare an insulated gate bipolar transistor (IGBT), and the heavily CZ-doped silicon wafer is used as the low-resistance back contact, so the required amount of the floating zone silicon wafers used is reduced, and production cost is lowered. Meanwhile, the back metallization process is not required after bonding, so the processing procedures are simplified, and the production yield is enhanced. | 03-14-2013 |
20130078761 | METHOD FOR MANUFACTURING A FLEXIBLE TRANSPARENT 1T1R STORAGE UNIT BASED ON A COMPLETELY LOW-TEMPERATURE PROCESS - The present invention belongs to the technical field of low temperature atomic layer deposition technology, and specifically relates to a method for manufacturing a flexible transparent 1T1R storage unit. In the present invention, a fully transparent 1T1R storage unit is developed on a flexible substrate through a completely low-temperature process, including an oxide layer dielectric, a transparent electrode and a transparent substrate which are deposited together through a low-temperature process, thus realizing a fully transparent device capable of achieving the functions of nontransparent devices. The present invention can be applied to the manufacturing of flexible low-temperature storage units in the future, as well as changing the packaging and existing modes of devices, which will make foldable and bendable portable storage units possible. | 03-28-2013 |
20130078797 | METHOD FOR MANUFACTURING A COPPER-DIFFUSION BARRIER LAYER USED IN NANO INTEGRATED CIRCUIT - The present invention belongs to the technical field of integrated semiconductor circuits, and relates to a method for manufacturing a copper-diffusion barrier layer. In the present invention, a proper reaction precursor has been selected and the atomic layer deposition (ALD) technology has been adopted to develop Co or Ru on a TaN layer to obtain a diffusion barrier layer used in the interconnection for process nodes no more than 32 nm, which overcomes the insufficiency of the PVD deposition Ta/TaN double-layer structure as the copper-diffusion barrier layer in step coverage and conformity, and also effectively solves various serious problems in the Cu/low-k dual damascene process, such as the generation of voids in grooves and through-holes, and electromigration stability. | 03-28-2013 |
20130078798 | METHOD FOR IMPROVING THE ELECTROMIGRATION RESISTANCE IN THE COPPER INTERCONNECTION PROCESS - The present invention belongs to the technical field of integrated semiconductor circuits, and relates to a method used in a process no greater than 32 nm to improve the electromigration resistance of Cu interconnects. Coating layers on Cu interconnects, such as CuSi | 03-28-2013 |
20130078819 | METHOD FOR CLEANING & PASSIVATING GALLIUM ARSENIDE SURFACE AUTOLOGOUS OXIDE AND DEPOSITING AL2O3 DIELECTRIC - The present invention belongs to the technical field of semiconductor materials and specifically relates to a method for cleaning & passivizing gallium arsenide (GaAs) surface autologous oxide and depositing an Al | 03-28-2013 |
20130092902 | NANOWIRE TUNNELING FIELD EFFECT TRANSISTOR WITH VERTICAL STRUCTURE AND A MANUFACTURING METHOD THEREOF - The present invention belongs to the technical field of semiconductor devices and specifically relates to a method for manufacturing a nanowire tunneling field effect transistor (TFET). In the method, the ZnO nanowire required is developed in a water bath without the need for high temperatures and high pressure, featuring a simple solution preparation, convenient development and low cost, as well as constituting MOS devices of vertical structure with nanowire directly, thus omitting the nanowire treatment in the subsequent stage. The present invention has the advantages of simple structure, convenient manufacturing, and low cost, and control of the nanowire channel developed and the MOSFET array with vertical structure made of it though the gate, so as to facilitate the manufacturing of large-scale MOSFET array directly. | 04-18-2013 |
20130134070 | Method for Seperating Carbon Nanotubes with Different Conductive Properties - This invention belongs to the technical field of integrated circuit manufacturing and specifically relates to a method for separating carbon nanotube materials with different conductive properties. The method is comprised of: immersing an integrated circuit material containing metallic carbon nanotubes and semiconductor carbon nanotubes into fluid; introducing the fluid into the same container from the same inlet; on the four sides of the container, forming an electric field and arranging a pair of magnetic poles generating magnetic lines vertical to the electric field; changing the direction and intensity of the electric lines of the electric field and those of the magnetic fields to separate the metallic carbon nanotubes from the semiconductor carbon nanotubes. By means of the method of this invention, the purity of the obtained semiconductor carbon nanotubes and the metallic carbon nanotubes is high, so the product yield of the integrated circuit containing the semiconductor carbon nanotubes is capable of being greatly enhanced. This method is simple, easy, low in cost and capable of greatly reducing the manufacturing cost of high-purity carbon nanotubes. | 05-30-2013 |
20130149824 | METHOD FOR MANUFACTURING A TUNNELING FIELD EFFECT TRANSISTOR WITH A U-SHAPED CHANNEL - The present invention belongs to the technical field of semiconductor device manufacturing and specifically relates to a method for manufacturing a tunneling field effect transistor with a U-shaped channel. The U-shaped channel can effectively extend the transistor channel length, restrain the generation of leakage current in the transistor, and decrease the chip power consumption. The method for manufacturing a tunneling field effect transistor with a U-shaped channel put forward in the present invention is capable of realizing an extremely narrow U-shaped channel, overcoming the alignment deviation introduced by photoetching, and improving the chip integration degree. | 06-13-2013 |
20130149848 | METHOD FOR MANUFACTURING VERTICAL-CHANNEL TUNNELING TRANSISTOR - The present invention belongs to the technical field of semiconductors and specifically relates to a method for manufacturing a vertical-channel tunneling transistor. In the present invention, the surrounding gate gate structure improves the control capacity of the gate and the source of narrow band gap material can enhance the device driving current. The method for manufacturing a vertical-channel tunneling transistor put forward by the present invention capable of controlling the channel length precisely features simple process, easy control and reduction of production cost. | 06-13-2013 |
20130162959 | Brightness-adjustable Light-emitting Device and Array and the Manufacturing Methods Thereof - The present invention belongs to the technical field of semiconductor devices and relates to a brightness-adjustable illuminator and an array and the manufacturing methods thereof. The illuminator is comprised of a semiconductor substrate, a MOSFET and a light-emitting diode that are located on the semiconductor substrate. The light-emitting diode (LED) and the control element (MOSFET) thereof are integrated on the same chip, so a single chip is capable of realizing the image transmission. An illuminator array may consist of a plurality of illuminators. Meanwhile, the invention also discloses a method for manufacturing the illuminator. Therefore, the projection equipment manufactured by the technology of the present invention has the advantages of small size, portability, low power consumption, etc. Furthermore, the use of the integrated circuit chip greatly simplifies the system of the projection equipment, reduces the production cost and greatly enhances the pixel quality and brightness. | 06-27-2013 |
20130178012 | METHOD FOR MANUFACTURING A GATE-CONTROL DIODE SEMICONDUCTOR DEVICE - This invention belongs to semiconductor device manufacturing field and discloses a method for manufacturing a gate-control diode semiconductor device. When the gate voltage is relatively high, the channel under the gate is of n-type and the device is of a simple gate-control pn junction structure; by way of controlling the effective n-type concentration of the ZnO film through back-gate control, inverting the n-type ZnO into p-type through the gate, and using NiO as a p-type semiconductor, an n-p-n-p doping structure is formed. The method features capacity of manufacturing gate-control diode devices able to reduce chip power consumption through the advantages of high driving current and small sub-threshold swing. The present invention using a low temperature process production is especially applicable to the manufacturing of semiconductor devices based on flexible substrates and reading & writing devices that have a flat panel display and phase change memory. | 07-11-2013 |
20130178013 | METHOD FOR MANUFACTURING A GATE-CONTROL DIODE SEMICONDUCTOR DEVICE - This invention belongs to semiconductor device manufacturing field and discloses a method for manufacturing a gate-control diode semiconductor device. When the gate voltage is relatively high, the channel under the gate has an n type and the device has a simple gate-control pn junction structure; by way of controlling the effective n-type concentration of the ZnO film through back-gate control, inverting the n-type ZnO into p-type through the gate and using NiO as a p-type semiconductor, an n-p-n-p doping structure is formed. The present invention features capacity of manufacturing gate-control diode devices able to reduce the chip power consumption through the advantages of a high driving current and small sub-threshold swing, is especially applicable to the manufacturing of reading & writing devices having flat panel displays & phase change memory, and semiconductor devices based on flexible substrates. | 07-11-2013 |
20130178014 | METHOD FOR MANUFACTURING A GATE-CONTROL DIODE SEMICONDUCTOR MEMORY DEVICE - This invention belongs to semiconductor device manufacturing field and discloses a method for manufacturing a gate-control diode semiconductor storage device. When the floating gate voltage is relatively high, the channel under the floating gate is of n type and a simple gate-control pn junction structure is configured; by controlling effective n-type concentration of the ZnO film through back-gate control, inverting the n-type ZnO into p-type through a floating gate and using NiO as a p-type semiconductor, an n-p-n-p doping structure is formed while the quantity of charges in the floating gate determines the device threshold voltage, thus realizing memory functions. This invention features capacity of manufacturing gate-control diode memory devices able to reduce the chip power consumption through advantages of high driving current and small sub-threshold swing. This invention is applicable to semiconductor devices manufacturing based on flexible substrate and flat panel displays and floating gate memories, etc. | 07-11-2013 |
20130187278 | STRUCTURE FOR INTERCONNECTING COPPER WITH LOW DIELECTRIC CONSTANT MEDIUM AND THE INTEGRATION METHOD THEREOF - The present invention belongs to the technical field of semiconductor devices, and discloses a structure for interconnecting a medium of low dielectric constant with copper and the integration method thereof. It includes: using a combination of copper interconnections and air gaps to reduce capacity, and a special structure to support copper conductors so as to maintain the shape of copper conductors after removing the medium. The advantage of the present invention is that it can realize the complete air gap structure without short circuit or disconnection of copper conductors as well as the complete air gap structure with long conductors, thus reducing RC delay. | 07-25-2013 |
20130237009 | METHOD FOR MANUFACTURING A GATE-CONTROL DIODE SEMICONDUCTOR DEVICE - The present invention belongs to the technical field of semiconductor device manufacturing, and specifically relates to a method for manufacturing a gate-control diode semiconductor device. The present invention manufactures gate-control diode semiconductor devices through a low-temperature process, features a simple process, low manufacturing cost, and capacity of manufacturing gate-control diode devices able to reduce the chip power consumption through advantages of high driving current and small sub-threshold swing. The method for manufacturing a gate-control diode semiconductor device proposed by the present invention is especially applicable to the manufacturing of reading & writing devices having flat panel displays and phase change memory, and semiconductor devices based on flexible substrates. | 09-12-2013 |
20130237010 | METHOD FOR MANUFACTURING A GATE-CONTROL DIODE SEMICONDUCTOR MEMORY DEVICE - The present invention belongs to the technical field of semiconductor device manufacturing, and specifically discloses a method for manufacturing a gate-control diode semiconductor storage device. The present invention manufactures gate-control diode semiconductor memory devices through a low-temperature process featuring a simple process, low manufacturing cost and capacity of manufacturing gate-control diode memory devices with a high driving current and small sub-threshold swing. The method for manufacturing a gate-control diode semiconductor memory device proposed by the present invention is especially applicable to the manufacturing of flat panel displays and phase change memories and memory devices based on flexible substrate. | 09-12-2013 |
20130264632 | THIN FILM TRANSISTOR MEMORY AND ITS FABRICATING METHOD - The invention relates to a thin film transistor memory and its fabricating method, This memory using the substrate as the gate electrode from bottom to up includes a charge blocking layer, a charge storage layer, a charge tunneling layer, an active region of the device and source/drain electrodes. The charge blocking layer is the ALD grown Al | 10-10-2013 |
20130341696 | METAL-OXIDE-SEMICONDUCTOR (MOS) TRANSISTOR STRUCTURE INTEGRATED WITH A RESISTANCE RANDOM ACCESS MEMORY (RRAM) AND THE MANUFACTURING METHODS THEREOF - The present invention belongs to the technical field of semiconductor memories, in particular to a metal oxide semiconductor (MOS) transistor structure integrated with a resistance random access memory (RRAM). The MOS transistor structure comprises a MOS transistor and a RRAM formed on a substrate, wherein a gate dielectric layer of said MOS transistor extends to the surface of a drain region of said MOS transistor; and the part of the gate dielectric layer on the surface of the drain region of said MOS transistor faults a resistance-variable storage layer of said RRAM. In this invention, the high-quality dielectric layer of the MOS transistor and the resistance-variable storage layer of the RRAM are obtained by primary atomic layer deposition which integrates the RRAM and MOS transistor together without increasing steps. This process is simple and can combine the shallow trench isolation or field oxygen isolation and ion implantation or diffusion of source electrode and drain electrode to make integration convenient. | 12-26-2013 |
20130341697 | TUNNEL TRANSISTOR STRUCTURE INTEGRATED WITH A RESISTANCE RANDOM ACCESS MEMORY (RRAM) AND A MANUFACTURING METHOD THEREOF - The invention relates to the technical field of semiconductor memories, in particular to a tunnel transistor structure integrated with a resistance random access memory and a manufacturing method thereof. The tunnel transistor structure in the present invention comprises a semiconductor substrate, and a tunnel transistor and a resistance random access memory formed on the semiconductor substrate, wherein the gate dielectric layer of the tunnel transistor extends to the surface of a drain region of the tunnel transistor; the part of the gate dielectric layer on the surface of the drain region of the tunnel transistor forms the resistance-variable storage layer of the resistance random access memory. In this invention, the high-quality gate dielectric layer of the tunnel transistor and the resistance-variable storage layer of the resistance random access memory are obtained by primary atomic layer deposition which integrates the resistance random access memory and tunnel transistor together without increasing steps. This process is simple and can combine the shallow trench isolation or field oxygen isolation and ion implantation or diffusion of source electrode and drain electrode to make integration convenient. | 12-26-2013 |
20140003122 | SEMICONDUCTOR MEMORY STRUCTURE AND CONTROL METHOD THEREOF | 01-02-2014 |
20140034891 | SEMICONDUCTOR MEMORY STRUCTURE AND ITS MANUFACTURING METHOD THEREOF - The present invention belongs to the technical field of microelectronic devices, specifically relates to a semiconductor memory structure and its manufacturing method thereof. The semiconductor memory structure which carries out erasing, writing and reading operation on the phase change memory or the resistance change memory through a tunneling field-effect transistor is formed, for one hand, the high current passed through the tunneling field-effect transistor when the p-n junction the biased positively, meeting the high current requirements for erasing of and writing of the phase change memory and the resistance change memory, and on the other hand, Vertical structure of the field-effect transistor can greatly improve the density of memory devices arrays. The present invention also discloses a method, which is very suitable for the memory chips, for the manufacturing of the semiconductor memory structure using self-aligned process. | 02-06-2014 |
20140084472 | COMPOUND DIELECTRIC ANTI-COPPER-DIFFUSION BARRIER LAYER FOR COPPER CONNECTION AND MANUFACTURING METHOD THEREOF - The disclosure belongs to the field of manufacturing and interconnection of integrated circuits, and in particular relates to compound dielectric anti-copper-diffusion barrier layer for copper interconnection and a manufacturing method thereof The disclosure uses compound dielectric (oxide & metal) as the anti-copper-diffusion barrier layer. First, it can enhance the capable of metal for anti-copper-diffusion efficiently, and prevent the barrier layer for valid owing to oxidized and prolong the life of the barrier layer. Second, it can reduce the effective dielectric constant of the interconnection circuits and furthermore reduce the RC delay of the whole interconnection circuits. Besides, the alloy is firmly adhered to the copper, and the metal copper can be directly electroplated without growing a layer of seed crystal copper. The method is simple and feasible and is expected to be applied to manufacturing of the anti-copper-diffusion barrier layers for copper interconnections. | 03-27-2014 |
20140159129 | NEAR-INFRARED-VISIBLE LIGHT ADJUSTABLE IMAGE SENSOR - The disclosure belongs to the field of semiconductor photoreceptors, in particular to a near-infrared-visible light adjustable image sensor. By adding a transfer transistor, the disclosure integrates a silicon-based photoelectric diode and a silicon germanium-based photoelectric diode on the same chip to realize that the silicon-based photoelectric diode and a silicon germanium-based photoelectric diode are controlled by the same readout circuit at different time, thus widening the spectrum response scope of the photoreceptor, realizing high integration and multifunction of the chip and reducing the manufacturing cost of the chip. The disclosure is applicable for intermediate and high-end products with low power consumption and photoreceptors for specific wave bands, in particular to military, communicative and other special fields. | 06-12-2014 |
20140167134 | SELF-ALIGNED VERTICAL NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - The present invention belongs to the technical field of semiconductor memory devices and specifically relates to a self-aligned vertical nonvolatile semiconductor memory device, Including: a semiconductor substrate, a drain region of a first doping type, two source regions of a second doping type, a stacked gate used to capture electrons; wherein the drain region, the two source regions and the stacked gate form two tunneling field effect transistors (TFETs) sharing one gate and one drain, the drain region current of each of the TFET is affected by the quantity and distribution of the charges in the stacked gate used to capture electrons, the drain is buried in the semiconductor substrate, the source regions above the drain region are separated from the drain through a channel and separated form each other through a region of the first doping type. The semiconductor memory device of the present invention features small unit area and simple manufacturing process. The memory chip using the present invention is of low manufacturing cost and high storage density. | 06-19-2014 |
20140377892 | METHOD OF FORMING AN INTEGRATED INDUCTOR BY DRY ETCHING AND METAL FILLING - The present invention discloses an inductive element formed by through silicon via interconnections. The inductive element formed by means of the special through silicon via interconnection by using through silicon via technology features advantages such as high inductance and density. Moreover, the through silicon via interconnection integrated process forming the inductive element is compatible with the ordinary through silicon interconnection integrated process without any other steps, thus making the process simple and steady. The inductive element using the present invention is applicable to the through silicon via package manufacturing of various chips, especially the package manufacturing of power control chips and radio-frequency chips. | 12-25-2014 |
20150132883 | PHOTO DETECTOR CONSISTING OF TUNNELING FIELD-EFFECT TRANSISTORS AND THE MANUFACTURING METHOD THEREOF - The present invention belongs to the technical field of optical interconnection and relates to a photo detector, in particular to a photo detector consisting of tunneling field-effect transistors. | 05-14-2015 |
20150311306 | METAL-OXIDE-SEMICONDUCTOR (MOS) TRANSISTOR STRUCTURE INTEGRATED WITH A RESISTANCE RANDOM ACCESS MEMORY (RRAM) AND THE MANUFACTURING METHODS THEREOF - The present invention belongs to the technical field of semiconductor memories, in particular to a metal oxide semiconductor (MOS) transistor structure integrated with a resistance random access memory (RRAM). The MOS transistor structure comprises a MOS transistor and a RRAM formed on a substrate, wherein a gate dielectric layer of said MOS transistor extends to the surface of a drain region of said MOS transistor; and the part of the gate dielectric layer on the surface of the drain region of said MOS transistor forms a resistance-variable storage layer of said RRAM. In this invention, the high-quality dielectric layer of the MOS transistor and the resistance-variable storage layer of the RRAM are obtained by primary atomic layer deposition which integrates the RRAM and MOS transistor together without increasing steps. This process is simple and can combine the shallow trench isolation or field oxygen isolation and ion implantation or diffusion of source electrode and drain electrode to make integration convenient. | 10-29-2015 |
20150325663 | SEMI-FLOATING-GATE DEVICE AND ITS MANUFACTURING METHOD - The disclosure, belonging to the technological field of semiconductor memory, specifically relates to a semi-floating-gate device which comprises at least a semiconductor substrate, a source region, a drain region, a floating gate, a control gate, a perpendicular channel region and a gated p-n junction diode used to connect the floating gate and the substrate. The semi-floating-gate device disclosed in the disclosure using the floating gate to store information and realizing charging or discharging of the floating gate through a gated p-n junction diode boasts small unit area, high chip density, low operating voltage in data storage and strong ability in data retain. | 11-12-2015 |
20150333141 | A HIGH ELECTRON MOBILITY DEVICE BASED ON THE GATE-FIRST PROCESS AND THE PRODUCTION METHOD THEREOF - The present disclosure belongs to the technical field of radio frequency power devices, and more specifically, to a high electron mobility device based on the gate-first process and the production method thereof. The high electro mobility device is made by adopting the gate-first process according to the present disclosure, wherein gate dielectric sidewalls are utilized to implement the self-alignment of the gate and source; besides, the source and drain of the device can be formed directly by use of the alloying process, the iron implanting process or epitaxy process after formation of the gate since the gate is protected by the passivating layer, featuring a simple technological process while reducing parameter shift of products and enhancing the electrical properties of high electron mobility devices. | 11-19-2015 |
Patent application number | Description | Published |
20140136610 | METHOD FOR CREATING GROUPS - The present disclosure discloses a method for creating groups, the method comprising a client setting up a condition for creating groups, and sending the condition to a server; the server searching the corresponding user information according to the conditions for creating groups, creating groups according to the corresponding user information, and sending information of created groups to the client and also sending the information of created group to all users in the groups. The method for creating groups permits a user to find relevant individuals quickly and create groups easily, without need of multiple inputs or outputs; moreover, the higher matching degree of group members could improve the enthusiasm of group chats and also stimulate the users to invite their friends to the interactive experience. | 05-15-2014 |
20140358566 | METHODS AND DEVICES FOR AUDIO PROCESSING - An audio processing method for use in a server, includes: receiving an audio file uploaded from a terminal that has downloaded a first accompaniment music file of a song from the server, the audio file being generated by the terminal by encoding collected audio information relating to singing a portion of the song and the first accompaniment music file; and marking an unmarked, audio mixing portion in the received audio file as a portion that has been sung, to generate a second accompaniment music file of the song. | 12-04-2014 |
20150117255 | METHOD AND NETWORKING DEVICE FOR SETTING NETWORK CONNECTION PARAMETERS - The present disclosure discloses a method for automatically setting network connection parameters in a networking device, comprising: accessing a network; acquiring all network connection manners supported by the network; selecting a network connection manner to be used from the acquired network connection manners; and automatically setting network connection parameters for the selected network connection manner. Accordingly, the efficiency of setting network connection parameters may be improved. | 04-30-2015 |
20150119116 | BATTERY, AND METHOD, DEVICE, AND SYSTEM FOR BATTERY PROTECTION - A battery for electronic equipment includes: a rechargeable power supply; and a battery chip, wherein: the rechargeable power supply is configured to supply power to the electronic equipment; and the battery chip is configured to detect whether the rechargeable power supply has started to supply power to the electronic equipment and, if a detection result is that the rechargeable power supply has started to supply power to the electronic equipment, transmit a customized signal to the electronic equipment through a predetermined transmitting pin. | 04-30-2015 |
20150268648 | METHOD AND TERMINAL DEVICE FOR CONTROLLING SMART HOME APPLIANCE - A method and a terminal device for controlling a smart home appliance are provided in the present disclosure. The method includes: obtaining a current operation instruction; determining whether there is a preset combination instruction corresponding to the current operation instruction; sending at least two operation instructions in the preset combination instruction to a corresponding smart home appliance if there is the preset combination instruction and the preset combination instruction is selected; sending the current operation instruction to the corresponding smart home appliance if there is no preset combination instruction. | 09-24-2015 |
20150288533 | METHOD AND DEVICE FOR REMOTE INTELLIGENT CONTROL - A method for remote intelligent control includes acquiring a trigger event, generating a notification message according to the trigger event, pushing the notification message to at least one notified terminal, receiving a control instruction returned by the at least one notified terminal, and controlling a controlled terminal corresponding to the control instruction according to the control instruction. The control instruction is generated according to the notification message. | 10-08-2015 |
20150288764 | METHOD AND APPARATUS FOR CONTROLLING SMART TERMINAL - A method for controlling smart terminals includes identifying a surrounding one of the smart terminals currently near a local terminal, and when the surrounding smart terminal is located in a predetermined safe region, performing at least one of sending a parameter control instruction to the surrounding smart terminal, sending the parameter control instruction to a predetermined one of the smart terminals, or changing a parameter setting of the local terminal according to a predetermined parameter setting. | 10-08-2015 |
20160055735 | TEMPERATURE PROMPTING METHOD AND DEVICE - The present disclosure relates to a temperature prompting method and device. The method includes: acquiring a current temperature in a target container; acquiring a distance of the target container to a target terminal, which is linked to the target container; determining, according to the current temperature, a first time duration to be elapsed when a temperature in the target container changes to a predetermined target temperature; determining, according to the distance of the target container to the target terminal, a second time duration to be elapsed when the target terminal moves to a location where the target container stands; and triggering a prompt signal if the first time duration is less than or equal to the second time duration. According to the present disclosure, temperature control flexibility may be improved. | 02-25-2016 |
20160057713 | METHOD AND DEVICE FOR ADJUSTING STATE OF WIRELESS NETWORK - A method for a wireless router to adjust a state of a wireless network provided by the wireless router, includes: monitoring whether the state of the wireless network satisfies an adjusting condition of adjusting the state of the wireless network; when the state of the wireless network satisfies the adjusting condition, sending an adjusting prompt to a wireless terminal, the adjusting prompt being configured to ask for user permission to adjust the state of the wireless network; and if the wireless router receives from the wireless terminal an acceptance instruction to accept the adjusting, adjusting the state of the wireless network. | 02-25-2016 |
20160062760 | METHOD AND TERMINAL DEVICE FOR COMPLYING ROUTER MANAGEMENT APPLICATION WITH ROUTER FIRMWARE - The present disclosure relates to a method and a device for complying a router management application with a router firmware. The method includes: obtaining a current version of the router management application and a current version of the router firmware, in which a router is managed by the router management application; determining an object to be upgraded and an object not to be upgraded from the router management application and the router firmware according to the current version of the router management application and the current version of the router firmware, if the router management application is not compatible with the router firmware; obtaining a target version of the object to be upgraded, in which the target version is compatible with the object not to be upgraded; and upgrading the object to be upgraded according to the target version. | 03-03-2016 |
20160070578 | METHOD AND SYSTEM FOR UPGRADING AN ELECTRONIC DEVICE - The present disclosure relates to methods and systems for upgrading electronic devices. For example, described herein are ways to upgrade components of an electronic device. The techniques may include receiving, at an electronic device (such as a smart phone or tablet computer), a plurality of files for upgrading a component of the electronic device. The electronic device may select a file of the plurality of files that is indicative of being configured to upgrade the component to a next version of a chronological sequence of versions of the component. The electronic device may also upgrade the component using the selected upgrade file. Also, the electronic device may repeat automatically, without human intervention, the selecting and the upgrading until the component is upgraded to a target version of the sequence of the versions. | 03-10-2016 |
20160081041 | METHOD AND DEVICE FOR ADJUSTING TRANSMISSION POWER - A method for adjusting transmission power of a gateway device includes acquiring an access device identity, acquiring a predetermined wireless transmission power corresponding to the access device identity, and adjusting a current transmission power of the gateway device according to the predetermined wireless transmission power. | 03-17-2016 |
20160112498 | METHODS AND DEVICES FOR ACQUIRING USER INFORMATION - The present disclosure relates to a method for acquiring user information in a terminal device for acquiring user information and a terminal device thereof, and a method for acquiring user information in a server and a server thereof. The method includes: receiving acquisition information uploaded by a first wearable device bound. Herein the acquisition information comprises an identifier for identifying a second wearable device detected by the first wearable device; uploading the acquisition information to a server; receiving the user information pushed by the server. Herein the user information is obtained by the server according to the identifier and is associated with the acquisition information; and performing a processing operation according to the user information. | 04-21-2016 |
20160119973 | METHOD AND DEVICE FOR PROVIDING SSID IN WLAN - This disclosure provides a method for providing a service set identifier (SSID) in a wireless local area network (WLAN). The method includes encoding the SSID with a character encoding for each of one or more default system platforms, to generate one or more SSID codes suitable for the system platforms, and broadcasting the generated SSID codes suitable for the system platforms in the WLAN. | 04-28-2016 |