Patent application number | Description | Published |
20080273561 | Method for Forming Anti-Reflective Coating - A system and method of minimizing the amount of power that is used by an optoelectronic module is disclosed. The system uses a thermoelectric cooler (TEC) to maintain a case temperature of the module at about 50° C. This allows the TEC to operate in the much more efficient heating mode, thus minimizing the amount of current being used to maintain the module temperature. The method includes the steps of determining a temperature range and operating temperature for an optoelectronic module, such that a maximum current level is not exceeded. In one exemplary embodiment, an operating temperature of about 50° C. with a temperature range of from about −5° C. to about 75° C. allows a maximum current of about 300 mA. | 11-06-2008 |
20080318436 | Antireflective Coating Material - Antireflective coatings comprising (i) a silsesquioxane resin having the formula (PhSiO (3-x)/2 (OH) x) mHSiO (3-x)/2 (OH) x) n (MeSiO (3-x)/2 (OH) x) p where Ph is a phenyl group, Me is a methyl group, x has a value of 0, 1 or 2; m has a value of 0.01 to 0.99, n has a value of 0.01 to 0.99, p has a value of 0.01 to 0.99, and m+n+p=1; (ii) a polyethylene oxide fluid; and (iii) a solvent; and a method of forming said antireflective coatings on an electronique device. | 12-25-2008 |
20090123701 | Method for Forming Anti-Reflective Coating - Silsesquioxane resins useful in forming the antireflective coating having the formula (PhSiO | 05-14-2009 |
20090202788 | Method Of Nanopatterning, A Cured Resist Film Use Therein, And An Article Including The Resist Film - A method of nanopatterning includes the steps of providing the resist film ( | 08-13-2009 |
20090256287 | UV Curable Silsesquioxane Resins For Nanoprint Lithography - Radiation-curable silsesquioxane resin materials are employed for micro- and nanolithography. The resin materials can include a radiation-curable silsesquioxane resin and a photo-initiator having low viscosity. The low viscosity of the liquid system allows imprinting with low pressure and low temperature; e.g. room temperature. The resist's dry etching resistance is increased and the cured film is more easily separated from the mask. Due to its high modulus after cure, the material allows the fabrication of micro- and nano-features having high aspect ratios while providing a high throughput. Various pattern sizes, for example, ranging from tens of microns to as small as a few nanometers, may be achieved with the UV-curable material system. | 10-15-2009 |
20100279025 | Silsesquioxane Resins - This invention pertains to silsesquioxane resins useful in antireflective coatings wherein the silsesquioxane resin has the formula (PhSiO | 11-04-2010 |
20110003480 | Silsesquioxane Resins - This invention pertains to silsesquioxane resins useful in antireflective coatings wherein the silsesquioxane resin is comprised of the units (Ph(CH | 01-06-2011 |
20110233489 | Silsesquioxane Resins - This invention pertains to silsesquioxane resins useful in antireflective coatings wherein the silsesquioxane resin comprises the units (Ph(CH | 09-29-2011 |
20110236835 | Silsesquioxane Resins - Antireflective coatings produced from silsesquioxane resin comprises the units (Ph(CH | 09-29-2011 |
20110236837 | Switchable Antireflective Coatings - An antireflective coating compositions comprising (I) a silsesquioxane resin (II) a compound selected from photo-acid generators and thermal acid generators; and (III) a solvent wherein in the silsesquioxane resin contains a carboxylic acid forming group or a sulfuric acid forming group. | 09-29-2011 |
20110301269 | Method for Forming Anti-Reflective Coating - A method of forming an antireflective coating on an electronic device comprising (A) applying to an electronic device an ARC composition comprising (i) a silsesquioxane resin having the formula (PhSiO | 12-08-2011 |
20120118856 | Method And Materials For Double Patterning - A silsesquioxane resin is applied over the patterned photo-resist and cured at the pattern surface to produce a cured silsesquioxane resin on the pattern surface. The uncured silsesquioxane resin layer is then removed leaving the cured silsesquioxane resin on the pattern surface. The cured silsesquioxane resin on horizontal surfaces is removed to expose the underlying photo-resist. This photo-resist is removed leaving a pattern of cured silsesquioxane. Optionally, the new pattern can be transferred into the underlying layer(s). | 05-17-2012 |
20130189495 | Nanoscale Photolithography - A simple and practical method that can reduce the feature size of a patterned structure bearing surface hydroxyl groups is described. The patterned structure can be obtained by any patterning technologies, such as photo-lithography, e-beam lithography, nano-imprinting lithography. The method includes: (1) initially converting the hydroxyl or silanol-rich surface into an amine-rich surface with the treatment of an amine agent, preferably a cyclic compound; (2) coating an epoxy material on the top of the patterned structure; (3) forming an extra layer when applied heat via a surface-initiated polymerization; (4) applying an amine coupling agent to regenerate the amine-rich surface; (5) coating an epoxy material on the top of the patterned structure to form the next layer; (6) repeating step 4 and 5 to form multiple layers; This method allows the fabrication of feature sizes of various patterns and contact holes that are difficult to reach by conventional lithographic methods. | 07-25-2013 |
20140011900 | Method for Producing Silyl-Functionalized Polyolefins and Silyl-Functionalized Polyolefins with Silyl Monomer Incorporation - Methods for producing a silyl-functionalized polyolefin with silyl monomer incorporation are provided. The method includes reacting a silicon-containing olefin with an α-olefin, in the presence of a catalytic amount of a group IV catalyst for a time sufficient to produce a silyl-functionalized polyolefin. | 01-09-2014 |
20140023970 | Photo-Patternable and Developable Silsesquioxane Resins for Use in Device Fabrication - A coatable resin solution capable of forming a coating when applied to the surface of a substrate that is photo-patternable and developable as a dielectric material upon exposure to ultraviolet radiation is provided. The resin solution comprises a silsequioxane-based (SSQ-based) resin, at least one initiator, and an organic solvent. The SSQ-based resin includes both a hydride component and at least one photo-curable component. The resulting coating exhibits a dielectric constant that is less than or equal to about 3.5. | 01-23-2014 |
20140342292 | DI-T-BUTOXYDIACETOXYSILANE-BASED SILSESQUIOXANE RESINS AS HARD-MASK ANTIREFLECTIVE COATING MATERIAL AND METHOD OF MAKING - A method of preparing a DIABS-based silsesquioxane resin for use in an antireflective hard-mask coating for photolithography is provided. Methods of preparing an antireflective coating from the DIABS-based silsesquioxane resin and using said antireflective coating in photolithography is alternatively presented. The DIABS-based silsequioxane resin has structural units formed from the hydrolysis and condensation of silane monomers including di-t-butoxydiacetoxysilane (DIABS) and at least one selected from the group of R | 11-20-2014 |