Patent application number | Description | Published |
20080296626 | NITRIDE SUBSTRATES, THIN FILMS, HETEROSTRUCTURES AND DEVICES FOR ENHANCED PERFORMANCE, AND METHODS OF MAKING THE SAME - The present invention provides nitride semiconductors having a moderate density of basal plane stacking faults and a reduced density of threading dislocations, various products based on, incorporating or comprising the nitride semiconductors, including without limitation substrates, template films, templates, heterostructures with or without integrated substrates, and devices, and methods for fabrication of templates and substrates comprising the nitride semiconductors. | 12-04-2008 |
20090001519 | GROWTH OF PLANAR, NON-POLAR, GROUP-III NITRIDE FILMS - Growth methods for planar, non-polar, Group-III nitride films are described. The resulting films are suitable for subsequent device regrowth by a variety of growth techniques. | 01-01-2009 |
20100133663 | TECHNIQUE FOR THE GROWTH OF PLANAR SEMI-POLAR GALLIUM NITRIDE - A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {10 | 06-03-2010 |
20110278585 | GROWTH OF REDUCED DISLOCATION DENSITY NON-POLAR GALLIUM NITRIDE - Lateral epitaxial overgrowth (LEO) of non-polar gallium nitride (GaN) films results in significantly reduced defect density. | 11-17-2011 |
20120074425 | GROWTH OF REDUCED DISLOCATION DENSITY NON-POLAR GALLIUM NITRIDE - Lateral epitaxial overgrowth (LEO) of non-polar gallium nitride (GaN) films results in significantly reduced defect density. | 03-29-2012 |
20120119222 | TECHNIQUE FOR THE GROWTH OF PLANAR SEMI-POLAR GALLIUM NITRIDE - A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {10 | 05-17-2012 |
20120187454 | NITRIDE SUBSTRATES, THIN FILMS, HETEROSTRUCTURES AND DEVICES FOR ENHANCED PERFORMANCE, AND METHODS OF MAKING THE SAME - The present invention provides nitride semiconductors having a moderate density of basal plane stacking faults and a reduced density of threading dislocations, various products based on, incorporating or comprising the nitride semiconductors, including without limitation substrates, template films, templates, heterostructures with or without integrated substrates, and devices, and methods for fabrication of templates and substrates comprising the nitride semiconductors. | 07-26-2012 |
20150233544 | REMOTE PHOSPHOR ELEMENT FILLED WITH TRANSPARENT MATERIAL AND METHOD FOR FORMING MULTISECTION OPTICAL ELEMENTS - Lighting components and fixtures having optical elements with multiple portions are disclosed. A wavelength conversion element can be mounted over a source, the wavelength conversion element including wavelength conversion material remote to the source, such as on or near the outside surface of a conversion element. The element can be filled with a transparent and thermally conductive material which thermally couples the remote conversion material and the source, aiding in thermal dissipation and improving fixture efficacy. An optical element can be formed by using an embossing plate to form a first portion, partially curing the first portion, removing the embossing plate, and introducing material to form a second portion. | 08-20-2015 |