Patent application number | Description | Published |
20080230819 | SPIN TRANSFER MAGNETIC ELEMENT WITH FREE LAYERS HAVING HIGH PERPENDICULAR ANISOTROPY AND IN-PLAN EQUILIBRIUM MAGNETIZATION - A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The free layer includes a first ferromagnetic layer and a second ferromagnetic layer. The second ferromagnetic layer has a very high perpendicular anisotropy and an out-of-plane demagnetization energy. The very high perpendicular anisotropy energy is greater than the out-of-plane demagnetization energy of the second layer. | 09-25-2008 |
20090302403 | SPIN TORQUE TRANSFER MAGNETIC MEMORY CELL - A spin-torque magnetic memory element comprises a large magnetic volume, and a thick magnetic layer. The magnetic layer comprises a nearly round shape, a small intrinsic anisotropy and a uniaxial anisotropy that is substantially based on the shape. In one exemplary embodiment, the nearly round shape substantially comprises about a 60 nm by about a 40 nm ellipse shape, and the thick magnetic layer comprises a thickness of about 20 nm to about 100 nm, preferably about 40 nm. In another exemplary embodiment, the thick magnetic layer comprises a first layer of magnetic material that comprises a reasonably high unaxial magnetic anisotropy; and a second layer of magnetic material comprises between about no anisotropy (i.e., 0 anisotropy) and a much lower unaxial magnetic anisotropy than the first layer of magnetic material. | 12-10-2009 |
20090323158 | Electrochromic Devices Based on Lithium Insertion - An electrochromic switching device comprises a counter electrode, an active electrode and an electrolyte layer disposed between the counter electrode and the active electrode. The active electrode comprises at least one of an oxide, a nitride, an oxynitrides, a partial oxide, a partial nitride and a partial oxynitride of at least one of Sb, Bi, Si, Ge, Sn, Te, N, P, As, Ga, In, Al, C, Pb and I. Upon application of a current to the electrochromic switching device, a compound comprising at least one of the alkali and the alkaline earth metal ion and an element of the active electrode is formed as part of the active electrode. | 12-31-2009 |
20090323161 | ELECTRICAL CHARACTERISTICS OF ELECTROCHROMIC DEVICES - One exemplary embodiment of an electrochromic device comprises a tantalum-nitride ion-blocking layer formed between a transparent conductive layer and an electrochromic layer. Another exemplary embodiment of an electrochromic device comprises a tantalum-nitride ion-blocking layer formed between a transparent conductive layer and a counter electrode. Yet another exemplary embodiment of an electrochromic device comprises a type-2 ion-blocking layer formed on a transparent conductive layer as an ion diffusion barrier overlayer. Still another exemplary embodiment of an electrochromic device comprises a transparent conductive layer formed from tantalum nitride. | 12-31-2009 |
20100079845 | Reflection-Controllable Electrochromic Device Using A Base Metal As A Transparent Conductor - An all-solid-state electrochromic device comprises a transparent base material, and an electrochromic multilayer-stack structure formed on the transparent base material. The electrochromic multilayer-stack structure comprises a first transparent-conductive film formed on the transparent base material, an ion-storage layer formed on the first transparent-conductive film, a solid-electrolyte layer formed on the ion-storage layer, and an electrochromic layer formed on the solid-electrolyte layer. The electrochromic layer comprises a reflection-controllable electrochromic layer. In one exemplary embodiment, the electrochromic layer comprises a reflection-controllable layer that comprises at least one of antimony and an antimony-based alloy. A second transparent-conductive film can be formed on the reflection-controllable layer, or between the reflection-controllable layer and the solid-electrolyte layer. In one exemplary embodiment, the second transparent-conductive layer comprises a base metal and/or a base metal alloy. | 04-01-2010 |
20100165440 | Electrochromic Device And Method For Making Electrochromic Device - A method for lithiating an electrochromic device comprise forming a first transparent conductive layer on a substrate, forming an electrochromic structure on the first transparent conductive layer, forming a second transparent conductive layer on the electrochromic structure, and lithiating the electrochromic structure through the second transparent conductive layer. In one exemplary embodiment lithiating the electrochromic structure comprises lithiating the electrochromic structure at a temperature range of between about room temperature and about 500 C for the duration of the lithiation process. In another exemplary embodiment, lithiating the electrochromic structure further comprises lithiating the electrochromic structure by using at least one of sputtering, evaporation, laser ablation and exposure to a lithium salt. The electrochromic device can be configured in either a “forward” or a “reverse” stack configuration. | 07-01-2010 |
20100238535 | ELECTROCHROMIC THIN-FILM MATERIAL - One exemplary embodiment of an electrochromic thin-film material comprises a metal-chalcogen compound; and/or a mixture or solid solution of one or more metal-rich metal-chalcogen compounds and/or lithium. One or more of the metals comprise Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Sb, or Bi, or combinations thereof; and one or more of the chalcogens comprise O, S, Se, or Te, or combinations thereof. | 09-23-2010 |
20110012215 | SPIN TRANSFER MAGNETIC ELEMENT WITH FREE LAYERS HAVING HIGH PERPENDICULAR ANISOTROPY AND IN-PLANE EQUILIBRIUM MAGNETIZATION - A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The free layer includes a first ferromagnetic layer and a second ferromagnetic layer. The second ferromagnetic layer has a very high perpendicular anisotropy and an out-of-plane demagnetization energy. The very high perpendicular anisotropy energy is greater than the out-of-plane demagnetization energy of the second layer. | 01-20-2011 |
20110140217 | SPIN TRANSFER MAGNETIC ELEMENT WITH FREE LAYERS HAVING HIGH PERPENDICULAR ANISOTROPY AND IN-PLANE EQUILIBRIUM MAGNETIZATION - A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The free layer includes a first ferromagnetic layer and a second ferromagnetic layer. The second ferromagnetic layer has a very high perpendicular anisotropy and an out-of-plane demagnetization energy. The very high perpendicular anisotropy energy is greater than the out-of-plane demagnetization energy of the second layer. | 06-16-2011 |
20150077827 | ELECTROCHROMIC DEVICE AND METHOD FOR MAKING ELECTROCHROMIC DEVICE - A method for lithiating an electrochromic device comprise forming a first transparent conductive layer on a substrate, forming an electrochromic structure on the first transparent conductive layer, forming a second transparent conductive layer on the electrochromic structure, and lithiating the electrochromic structure through the second transparent conductive layer. In one exemplary embodiment lithiating the electrochromic structure comprises lithiating the electrochromic structure at a temperature range of between about room temperature and about 500 C for the duration of the lithiation process. In another exemplary embodiment, lithiating the electrochromic structure further comprises lithiating the electrochromic structure by using at least one of sputtering, evaporation, laser ablation and exposure to a lithium salt. The electrochromic device can be configured in either a “forward” or a “reverse” stack configuration. | 03-19-2015 |