Patent application number | Description | Published |
20080299353 | Methods and compositions for forming patterns with isolated or discrete features using block copolymer materials - Methods of directing the self assembly of block copolymers on chemically patterned surfaces to pattern discrete or isolated features needed for applications including patterning integrated circuit layouts are described. According to various embodiments, these features include lines, t-junctions, bends, spots and jogs. In certain embodiments a uniform field surrounds the discrete feature or features. In certain embodiments, a layer contains two or more distinct regions, the regions differing in one or more of type of feature, size, and/or pitch. An example is an isolated spot at one area of the substrate, and a t-junction at another area of the substrate. These features or regions of features may be separated by unpatterned or uniform fields, or may be adjacent to one another. Applications include masks for nanoscale pattern transfer as well as the fabrication of integrated circuit device structures. | 12-04-2008 |
20090087653 | Fabrication of complex three-dimensional structures based on directed assembly of self-assembling materials on activated two-dimensional templates - Methods of fabricating complex three-dimensional structures on patterned substrates and related compositions are provided. The methods involve depositing on the substrate a block copolymer material that is “mismatched” to the substrate pattern, and then ordering the material to form a complex three-dimensional structure. According to various embodiments, the copolymer material mismatches the substrate pattern in that the symmetry and/or length scale of its bulk morphology differs from that of the pattern. When ordered, a balance between the physics that determines the bulk block copolymer morphology and the physics that determines the substrate surface interfacial interactions results in a thermodynamically stable complex three-dimensional film that varies in a direction perpendicular to the substrate and has a morphology that differs from its bulk morphology. | 04-02-2009 |
20090087664 | Directed assembly of triblock copolymers - Methods of directed self-assembly of multi-block (i.e., triblock and higher-order) copolymers on patterned substrates and related compositions are provided. According to various embodiments, the methods involve depositing copolymer materials on substrates configured to drive the assembly of micro-phase separated films that exhibit the same morphology as that copolymer materials in the bulk. In certain embodiments, binary patterns are used to drive the triblock copolymer films. The binary two-dimensional surface patterns are transformed into three-component and three-dimensional structures throughout the thickness of the overlying copolymer films. | 04-02-2009 |
20090196488 | DENSITY MULTIPLICATION AND IMPROVED LITHOGRAPHY BY DIRECTED BLOCK COPOLYMER ASSEMBLY - Methods to pattern substrates with dense periodic nanostructures that combine top-down lithographic tools and self-assembling block copolymer materials are provided. According to various embodiments, the methods involve chemically patterning a substrate, depositing a block copolymer film on the chemically patterned imaging layer, and allowing the block copolymer to self-assemble in the presence of the chemically patterned substrate, thereby producing a pattern in the block copolymer film that is improved over the substrate pattern in terms feature size, shape, and uniformity, as well as regular spacing between arrays of features and between the features within each array compared to the substrate pattern. In certain embodiments, the density and total number of pattern features in the block copolymer film is also increased. High density and quality nanoimprint templates and other nanopatterned structures are also provided. | 08-06-2009 |
20090260750 | MOLECULAR TRANSFER PRINTING USING BLOCK COPOLYMERS - Methods of creating and transferring chemical patterns and physical patterns of deposited materials or molecules using block copolymers are provided. The methods involve providing block copolymer materials blended with one or more transfer molecules or inks. The differences in chemistry of the blocks of the copolymer that result in micro-phase separation (e.g., self-assembly into nanoscale domains) also allow inks to be sequestered into specific blocks. By designing the ink molecules to react, adsorb, or otherwise interact with a second substrate, inks are transferred to the second substrate in a pattern dictated by the pattern of block copolymer domains present at the surface of the block copolymer film. | 10-22-2009 |
20120164392 | METHODS AND COMPOSITIONS FOR FORMING PATTERNS WITH ISOLATED OR DISCRETE FEATURES USING BLOCK COPOLYMER MATERIALS - Methods of directing the self assembly of block copolymers on chemically patterned surfaces to pattern discrete or isolated features needed for applications including patterning integrated circuit layouts are described. According to various embodiments, these features include lines, t-junctions, bends, spots and jogs. In certain embodiments a uniform field surrounds the discrete feature or features. In certain embodiments, a layer contains two or more distinct regions, the regions differing in one or more of type of feature, size, and/or pitch. An example is an isolated spot at one area of the substrate, and a t-junction at another area of the substrate. These features or regions of features may be separated by unpatterned or uniform fields, or may be adjacent to one another. Applications include masks for nanoscale pattern transfer as well as the fabrication of integrated circuit device structures. | 06-28-2012 |
20120189824 | FABRICATION OF COMPLEX THREE-DIMENSIONAL STRUCTURES BASED ON DIRECTED ASSEMBLY OF SELF-ASSEMBLING MATERIALS ON ACTIVATED TWO-DIMENSIONAL TEMPLATES - Methods of fabricating complex three-dimensional structures on patterned substrates and related compositions are provided. The methods involve depositing on the substrate a block copolymer material that is “mismatched” to the substrate pattern, and then ordering the material to form a complex three-dimensional structure. According to various embodiments, the copolymer material mismatches the substrate pattern in that the symmetry and/or length scale of its bulk morphology differs from that of the pattern. When ordered, a balance between the physics that determines the bulk block copolymer morphology and the physics that determines the substrate surface interfacial interactions results in a thermodynamically stable complex three-dimensional film that varies in a direction perpendicular to the substrate and has a morphology that differs from its bulk morphology. | 07-26-2012 |
20120217220 | METHOD USING BLOCK COPOLYMERS FOR MAKING A MASTER MOLD FOR NANOIMPRINTING PATTERNED MAGNETIC RECORDING DISKS WITH CHEVRON SERVO PATTERNS - A method for making a master mold used to nanoimprint patterned magnetic recording disks that have chevron servo patterns with minimal defects uses directed self-assembly of block copolymers. A pattern of chemically modified polymer brush material is formed on the master mold substrate. The pattern includes sets of slanted stripes and interface strips between the sets of slanted stripes. A block copolymer material is deposited on the pattern, which results in directed self-assembly of the block copolymer as lamellae perpendicular to the substrate that are formed into alternating slanted stripes of alternating first and second components of the block copolymer. This component also forms on the interface strips, but as a lamella parallel to the substrate. One of the components is then removed, leaving the remaining component as a grid that acts as a mask for etching the substrate to form the master mold. The disks nanoimprinted by the master mold have reduced defective areas in the transition regions of the chevron servo patterns. | 08-30-2012 |
20130029113 | BLOCK COPOLYMER MATERIALS FOR DIRECTED ASSEMBLY OF THIN FILMS - Provided herein are methods of formulating and engineering block copolymer (BCP) systems for directed self-assembly (DSA) processes. In some embodiments, the methods involve engineering a BCP material based on the interaction parameter (χ) of the material and the surface and/or interaction energies of its constituent blocks. Also provided are novel block BCP materials that can be used in DSA techniques. In some embodiments, the BCP systems described herein have micro-phase separating blocks, with at least one block including multiple types of repeat units. Also provided are structures formed by DSA, including structures having a sub-20 nm dimension. Applications included nanolithography for semiconductor devices, fabrication of cell-based assays, nanoprinting, photovoltaic cells, and surface-conduction electron-emitter displays. | 01-31-2013 |
20130189504 | DIRECTED ASSEMBLY OF BLOCK COPOLYMER FILMS BETWEEN A CHEMICALLY PATTERNED SURFACE AND A SECOND SURFACE - Provided are methods of fabricating thin film structures that involve assembling block copolymer materials in the presence of condensed phase surfaces on both sides of the thin film, at least one of which is a chemically patterned surface configured to direct the assembly of the block copolymer material. According to various embodiments, the other of the condensed phase surfaces can be a chemically homogenous surface or a chemically patterned surface. Also provided are structures, morphologies, and templates formed in the domain structure of block copolymer materials. In certain embodiments, complex 3-D morphologies and related structures not present in bulk block copolymer materials are provided. | 07-25-2013 |
20130230705 | PATTERNING IN THE DIRECTED ASSEMBLY OF BLOCK COPOLYMERS USING TRIBLOCK OR MULTIBLOCK COPOLYMERS - Provided herein are block copolymer thin film structures and methods of fabrication. The methods involve directing the assembly of ABA triblock copolymers such that desired features are formed by domains of the assembled ABA triblock copolymer. In some embodiments, an ABA triblock copolymer is directed to assemble by a chemical pattern. Chemical patterns with periods much different than the natural period of the ABA triblock copolymer may be used to direct assembly of the ABA triblock copolymer. | 09-05-2013 |
20140010990 | DIRECTED ASSEMBLY OF POLY (STYRENE-B-GLYCOLIC ACID) BLOCK COPOLYMER FILMS - Perpendicular nanostructures with small feature dimensions in thin films and related methods of fabrication are provided. In some embodiments, the methods include directed assembly of poly(styrene-b-glycolic acid) (PS-b-PGA), poly(styrene-b-lactic acid) (PS-b-PLA) and other block copolymers containing PGA or a derivative thereof. The block copolymer films can be directed to assemble on chemical patterns such that the nanostructures extend through the thickness of the film, without forming a wetting layer at the free surface. The nanostructures can have sub-10 nm feature dimensions. | 01-09-2014 |
20140065379 | TOPCOAT SURFACES FOR DIRECTING THE ASSEMBLY OF BLOCK COPOLYMER FILMS ON CHEMICALLY PATTERNED SURFACES - Provided are novel methods of fabricating block copolymer thin film structures that allow control over both the lateral structure and vertical orientation of the thin films. In some embodiments, the methods involve directing the assembly of a block copolymer thin film between a chemically patterned surface and a second surface such that the thin film includes domains that are oriented perpendicularly through the thickness of the thin film. In certain embodiments, the second surface can be preferential at least one block of the block copolymer. In certain embodiments, the second surface can be a homopolymer. Also provided are thin film block copolymer structures having perpendicular orientations through the thickness of the thin films. The methods and structures may include block copolymers having large interaction parameters (χ's) and small domain sizes. | 03-06-2014 |
20140087142 | FABRICATION OF COMPLEX THREE-DIMENSIONAL STRUCTURES BASED ON DIRECTED ASSEMBLY OF SELF-ASSEMBLING MATERIALS ON ACTIVATED TWO-DIMENSIONAL TEMPLATES - Methods of fabricating complex three-dimensional structures on patterned substrates and related compositions are provided. The methods involve depositing on the substrate a block copolymer material that is “mismatched” to the substrate pattern, and then ordering the material to form a complex three-dimensional structure. According to various embodiments, the copolymer material mismatches the substrate pattern in that the symmetry and/or length scale of its bulk morphology differs from that of the pattern. When ordered, a balance between the physics that determines the bulk block copolymer morphology and the physics that determines the substrate surface interfacial interactions results in a thermodynamically stable complex three-dimensional film that varies in a direction perpendicular to the substrate and has a morphology that differs from its bulk morphology. | 03-27-2014 |