| Patent application number | Description | Published |
|---|
| 20090262638 | SPIN-TORQUE MEMORY WITH UNIDIRECTIONAL WRITE SCHEME - Spin torque magnetic memory elements that have a pinned layer, two free layers, and a current-blocking insulating layer proximate to at least one of the free layers. The resistive state (e.g., low resistance or high resistance) of the memory elements is altered by passing electric current through the element in one direction. In other words, to change from a low resistance to a high resistance, the direction of electric current is the same as to change from a high resistance to a low resistance. The elements have a unidirectional write scheme. | 10-22-2009 |
| 20090316462 | MAGNETIC TRACKS WITH DOMAIN WALL STORAGE ANCHORS - Magnetic shift registers in which data writing and reading is accomplished by moving the magnetic domain walls by electric current. Various embodiments of domain wall nodes or anchors that stabilize a domain wall are provided. In some embodiments, the wall anchors are elements separate from the magnetic track. In other embodiments, the wall anchors are disturbances in the physical configuration of the magnetic track. In still other embodiments, the wall anchors are disturbances in the material of the magnetic track. | 12-24-2009 |
| 20100073984 | MAGNETIC SHIFT REGISTER AS COUNTER AND DATA STORAGE DEVICE - A register having a track with a first electrode is at the first end to supply a current to the track in a first direction and a second electrode at the second end to supply a current to the track in a second direction, the second direction being opposite to the first direction. A first domain wall anchor and a second domain wall anchor are positioned proximate the track between the first electrode and the second electrode. Each of the domain wall anchors has a ferromagnetic pinned layer and a barrier layer proximate the track, with the barrier layer between the track and the ferromagnetic pinned layer. The ferromagnetic layer has a magnetization orientation pinned perpendicular to the magnetization orientation of the track. | 03-25-2010 |
| 20100102406 | MAGNETIC STACK DESIGN - A magnetic stack having a free layer having a switchable magnetization orientation, a reference layer having a pinned magnetization orientation, and a barrier layer therebetween. The stack includes an annular antiferromagnetic pinning layer electrically isolated from the free layer and in physical contact with the reference layer. In some embodiments, the reference layer is larger than the free layer. | 04-29-2010 |
| 20100117169 | MEMORY CELL WITH RADIAL BARRIER - Magnetic tunnel junction cells and methods of making magnetic tunnel junction cells that include a radially protective layer extending proximate at least the ferromagnetic free layer of the cell. The radially protective layer can be specifically chosen in thickness, deposition method, material composition, and/or extent along the cell layers to enhance the effective magnetic properties of the free layer, including the effective coercivity, effective magnetic anisotropy, effective dispersion in magnetic moment, or effective spin polarization. | 05-13-2010 |
| 20100135072 | Spin-Torque Bit Cell With Unpinned Reference Layer and Unidirectional Write Current - Method and apparatus for using a uni-directional write current to store different logic states in a non-volatile memory cell, such as a modified STRAM cell. In some embodiments, the memory cell has an unpinned ferromagnetic reference layer adjacent a cladded conductor, a ferromagnetic storage layer and a tunneling barrier between the reference layer and the storage layer. Passage of a current along the cladded conductor induces a selected magnetic orientation in the reference layer, which is transferred through the tunneling barrier for storage by the storage layer. Further, the orientation of the applying step is provided by a cladding layer adjacent a conductor along which a current is passed and the current induces a magnetic field in the cladding layer of the selected magnetic orientation. | 06-03-2010 |
| 20100246245 | SPIN-TORQUE MEMORY WITH UNIDIRECTIONAL WRITE SCHEME - Spin torque magnetic memory elements that have a pinned layer, two free layers, and a current-blocking insulating layer proximate to at least one of the free layers. The resistive state (e.g., low resistance or high resistance) of the memory elements is altered by passing electric current through the element in one direction. In other words, to change from a low resistance to a high resistance, the direction of electric current is the same as to change from a high resistance to a low resistance. The elements have a unidirectional write scheme. | 09-30-2010 |
| 20100330800 | METHODS OF FORMING LAYERS OF ALPHA-TANTALUM - A method of forming a layer of alpha-tantalum on a substrate including the steps of depositing a layer of titanium nitride on a substrate; and depositing a layer of alpha-tantalum on the layer of titanium nitride, wherein the deposition of the alpha-tantalum is carried out at temperatures below about 300° C. | 12-30-2010 |
| 20110005920 | Low Temperature Deposition of Amorphous Thin Films - Various embodiments of the present invention are generally directed to an apparatus and method for low temperature physical vapor deposition (PVD) of an amorphous thin film layer of material onto a substrate. A PVD chamber is configured to support a substrate and has a cathode target with a layer of sputtering material thereon, an anode shield, and a magnetron assembly adjacent the target. A high impulse power magnetron sputtering (HiPIMS) power supply is coupled to the PVD chamber, the power supply having a charging circuit and a charge storage device. The power supply applies relatively high energy, low duty cycle pulses to the magnetron assembly to sputter, via self ionizing plasma, relatively low energy ions from the layer of sputtering material to deposit an amorphous thin film layer onto the substrate. | 01-13-2011 |
| 20110075472 | MAGNETORESISTIVE DEVICE HAVING SPECULAR SIDEWALL LAYERS - A multilayered magnetoresistive device includes a specular layer positioned on at least one sidewall and a copper layer positioned between the specular layer and the sidewall. | 03-31-2011 |
