| Patent application number | Description | Published |
|---|
| 20080198638 | CONTROL ARRANGEMENT FOR A RESONANT MODE POWER CONVERTER - The switching frequency of an LLC converter is controlled by a control unit to which a feedback circuit provides a first current dependent upon the output voltage of the converter. An oscillator circuit produces a sawtooth waveform at a frequency dependent upon the first current, up to a limit equal to a second current set by a resistor. Two complementary switch control signals are produced for controlling two switches of the converter for conduction in alternate cycles of the sawtooth waveform. A timer produces dead times between the two complementary switch control signals in dependence upon the second current. Another resistor provides a current constituting a minimum value of the first current, and a charging current of a capacitor in series with a resistor modifies the first current for soft starting of the converter. | 08-21-2008 |
| 20090034347 | HIGH SPEED DRAM ARCHITECTURE WITH UNIFORM ACCESS LATENCY - A Dynamic Random Access Memory (DRAM) performs read, write, and refresh operations. The DRAM includes a plurality of sub-arrays, each having a plurality of memory cells, each of which is coupled with a complementary bit line pair and a word line. The DRAM further includes a word line enable device for asserting a selected one of the word lines and a column select device for asserting a selected one of the bit line pairs. A timing circuit is provided for controlling the word line enable device, the column select device, and the read, write, and refresh operations in response to a word line timing pulse. The read, write, and refresh operation are performed in the same amount of time. | 02-05-2009 |
| 20090135664 | METHOD AND APPARATUS FOR SYNCHRONIZATION OF ROW AND COLUMN ACCESS OPERATIONS - A circuit for synchronizing row and column access operations in a semiconductor memory having an array of bit line pairs, word lines, memory cells, sense amplifiers, and a sense amplifier power supply circuit for powering the sense amplifiers, the circuit comprising, a first delay circuit for delaying a word line timing pulse by a first predetermined period, a first logic circuit for logically combining the word line timing pulse and the delayed word line timing pulse to produce a sense amplifier enable signal, for enabling a sense amplifier power supply circuit, a second delay circuit for delaying the word line timing pulse by a second predetermined period, and a second logic circuit for logically combining the word line timing pulse and the second delayed word line timing pulse to produce a column select enable signal, for enabling selected ones of a plurality of column access devices wherein the second predetermined time period is selected so that ones of a plurality of column access devices are activated after the sense amplifier power supply circuit is enabled. | 05-28-2009 |
| 20090262592 | METHOD AND APPARATUS FOR SYNCHRONIZATION OF ROW AND COLUMN ACCESS OPERATIONS - A circuit for synchronizing row and column access operations in a semiconductor memory having an array of bit line pairs, word lines, memory cells, sense amplifiers, and a sense amplifier power supply circuit for powering the sense amplifiers, the circuit comprising, a first delay circuit for delaying a word line timing pulse by a first predetermined period, a first logic circuit for logically combining the word line timing pulse and the delayed word line timing pulse to produce a sense amplifier enable signal, for enabling a sense amplifier power supply circuit, a second delay circuit for delaying the word line timing pulse by a second predetermined period, and a second logic circuit for logically combining the word line timing pulse and the second delayed word line timing pulse to produce a column select enable signal, for enabling selected ones of a plurality of column access devices wherein the second predetermined time period is selected so that ones of a plurality of column access devices are activated after the sense amplifier power supply circuit is enabled. | 10-22-2009 |
| 20090316454 | POWER FACTOR CORRECTION CONVERTER CONTROL OFFSET - Power factor correction converter control offset apparatus and methods are disclosed. In one aspect, an apparatus includes a control unit to generate a control signal to control a duty cycle of a PWM (Pulse Width Modulation) switching signal that controls a switch in a PFC (Power Factor Correction) converter. An offset unit is also included and is coupled to the control unit, to generate a variable offset signal to offset the control signal or a signal used by the control unit to generate the control signal. | 12-24-2009 |
| 20100135089 | METHOD AND APPARATUS FOR SYNCHRONIZATION OF ROW AND COLUMN ACCESS OPERATIONS - A circuit for synchronizing row and column access operations in a semiconductor memory having an array of bit line pairs, word lines, memory cells, sense amplifiers, and a sense amplifier power supply circuit for powering the sense amplifiers, the circuit comprising, a first delay circuit for delaying a word line timing pulse by a first predetermined period, a first logic circuit for logically combining the word line timing pulse and the delayed word line timing pulse to produce a sense amplifier enable signal, for enabling a sense amplifier power supply circuit, a second delay circuit for delaying the word line timing pulse by a second predetermined period, and a second logic circuit for logically combining the word line timing pulse and the second delayed word line timing pulse to produce a column select enable signal, for enabling selected ones of a plurality of column access devices wherein the second predetermined time period is selected so that ones of a plurality of column access devices are activated after the sense amplifier power supply circuit is enabled. | 06-03-2010 |
| 20100232237 | HIGH SPEED DRAM ARCHITECTURE WITH UNIFORM ACCESS LATENCY - A Dynamic Random Access Memory (DRAM) performs read, write, and refresh operations. The DRAM includes a plurality of sub-arrays, each having a plurality of memory cells, each of which is coupled with a complementary bit line pair and a word line. The DRAM further includes a word line enable device for asserting a selected one of the word lines and a column select device for asserting a selected one of the bit line pairs. A timing circuit is provided for controlling the word line enable device, the column select device, and the read, write, and refresh operations in response to a word line timing pulse. The read, write, and refresh operation are performed in the same amount of time. | 09-16-2010 |
| 20110044074 | CONTROL ARRANGEMENT FOR A RESONANT MODE POWER CONVERTER - A resonant mode power converter is controlled with a control unit including a feedback circuit coupled to generate a first current representative of an output of the power converter. A current limiting circuit is coupled to receive the first current and a second current generated in response to a reference voltage. The current limiting circuit is coupled to limit the first current in response to the second current. An oscillator is coupled to receive the first current to generate a control signal having a control frequency in response to the first current. An output voltage of the power converter is controlled in response to the control frequency of the control signal. | 02-24-2011 |
