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| 20100011127 | METHODS AND APPARATUS FOR CONTROL USING CONTROL DEVICES THAT PROVIDE A VIRTUAL MACHINE ENVIRONMENT AND THAT COMMUNICATE VIA AN IP NETWORK - The invention provides improved methods and apparatus for control using field and control devices that provide a virtual machine environment and that communicate via an IP network. By way of non-limiting example, such field device can be an “intelligent” transmitter or actuator that includes a low power processor, along with a random access memory, a read-only memory, FlashRAM, and a sensor interface. The processor can execute a real-time operating system, as well as a Java virtual machine (JVM). Java byte code executes in the JVM to configure the field device to perform typical process control functions, e.g., for proportional integral derivative (PID) control and signal conditioning. Control networks can include a plurality of such field and control devices interconnected by an IP network, such as an Ethernet. | 01-14-2010 |
| 20100076604 | METHOD AND APPARATUS FOR CONTROL USING CONTROL DEVICES THAT PROVIDE A VIRTUAL MACHINE ENVIRONMENT AND THAT COMMUNICATE VIA AN IP NETWORK - The invention provides improved methods and apparatus for control using field and control devices that provide a virtual machine environment and that communicate via an IP network. By way of non-limiting example, such field device can be an “intelligent” transmitter or actuator that includes a low power processor, along with a random access memory, a read-only memory, FlashRAM, and a sensor interface. The processor can execute a real-time operating system, as well as a Java virtual machine (JVM). Java byte code executes in the JVM to configure the field device to perform typical process control functions, e.g., for proportional integral derivative (PID) control and signal conditioning. Control networks can include a plurality of such field and control devices interconnected by an IP network, such as an Ethernet. | 03-25-2010 |
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| 20100229152 | PRESCRIPTIVE ARCHITECTURE FOR APPLICATION DEVELOPMENT - A prescriptive architecture for application development is provided. In some embodiments, the architecture comprises a service, a receiver, a sender, and a transport. The service functions to perform the actual business logic, is decorated with service deployment metadata; and is operable to communicate via types. The receiver is coupled to the service and is generated entirely from the service deployment metadata. The receiver is operable to receive messages, convert the received messages into types, and communicate with the service using the types. The sender is coupled to the receiver and is generated entirely from the service deployment metadata. The sender functions as a proxy for the service to a service consumer, and is operable to communicate using types with the service consumer. The sender is operable to convert the types to messages, and communicate with the receiver via messages. The transport functions as a message exchange technology that allows the sender and receiver to communicate, and is designated by the service deployment metadata and implemented as an underlying technology of the sender and the receiver. | 09-09-2010 |
| 20100229154 | DECLARATIVE ASPECTS AND ASPECT CONTAINERS FOR APPLICATION DEVELOPMENT - An aspect container being operable to generate an instance of itself at run time is provided. The aspect container comprises logic operable to create an instance of the aspect container by reading configuration information specifying a sequence of one or more aspects from an aspect container configuration file corresponding to the aspect container. The logic is also operable to generate instances of the aspects in the sequence, configure each aspect instance with its configuration information from an aspect configuration file corresponding to the aspect, and chain the aspect instances according to the specified sequence, such that the chain of aspect instances preamble and postamble activities of a class or method. | 09-09-2010 |
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| 20090192855 | Computer-Implemented Data Storage Systems And Methods For Use With Predictive Model Systems - Systems and methods for performing fraud detection. As an example, a system and method can be configured to contain a raw data repository for storing raw data related to financial transactions. A data store contains rules to indicate how many generations or to indicate a time period within which data items are to be stored in the raw data repository. Data items stored in the raw data repository are then accessed by a predictive model in order to perform fraud detection. | 07-30-2009 |
| 20090192957 | Computer-Implemented Data Storage Systems And Methods For Use With Predictive Model Systems - Systems and methods for performing fraud detection. As an example, a system and method can be configured to contain a raw data repository for storing raw data related to financial transactions. A data store contains rules to indicate how many generations or to indicate a time period within which data items are to be stored in the raw data repository. Data items stored in the raw data repository are then accessed by a predictive model in order to perform fraud detection. | 07-30-2009 |
| 20090234683 | Detecting and Measuring Risk with Predictive Models Using Content Mining - Computer implemented methods and systems of processing transactions to determine the risk of transaction convert high categorical information, such as text data, to low categorical information, such as category or cluster IDs. The text data may be merchant names or other textual content of the transactions, or data related to a consumer, or any other type of entity which engages in the transaction. Content mining techniques are used to provide the conversion from high to low categorical information. In operation, the resulting low categorical information is input, along with other data, into a statistical model. The statistical model provides an output of the level of risk in the transaction. Methods of converting the high categorical information to low categorical clusters, of using such information, and other aspects of the use of such clusters are disclosed. | 09-17-2009 |
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| 20090030503 | METHOD AND APPARATUS FOR PERCUTANEOUS AORTIC VALVE REPLACEMENT - A method for percutaneous aortic valve (PAV) replacement and a temporary aortic valve used to facilitate the same. The temporary valve is comprised of a reversibly expandable occluding means, such as balloons, surrounding a central catheter mechanism. The temporary valve is positioned within the ascending aorta, just above and downstream from the coronary ostia. The occluding means is configured such that, when fully expanded against the aortic wall, gaps are left that promote continuous coronary perfusion during the cardiac cycle. The native aortic valve is next dilated, and then ablated through deployment of an ablation stent. The ablation stent displaces the native valve tissues and remains within the aortic annulus to receive and retain the PAV. The PAV can then be positioned and deployed within the ablation stent with precision and ease. Ablation of the native aortic valve removes the structural obstacles to precise PAV placement. The temporary aortic valve mediates the hemodynamic forces encountered by the surgeon following native valve ablation. The temporary valve also promotes patient stability through continuous coronary perfusion and a moderated transvavlular pressure gradient. Mathematical considerations for determining the optimum cross-sectional area for the temporary valve blood perfusion gaps are also described. | 01-29-2009 |
| 20090030510 | METHODS AND APPARATUS FOR PERCUTANEOUS AORTIC VALVE REPLACEMENT - A delivery system and method for percutaneous aortic valve (PAV) replacement and apparatus used therein. A temporary aortic valve comprised of a reversibly expandable occluding means, such as balloons, surrounds a central catheter mechanism. The temporary valve is positioned within the ascending aorta, just above and downstream from the coronary ostia. The occluding means is configured such that, when fully expanded against the aortic wall, gaps are left that promote continuous coronary perfusion during the cardiac cycle. The temporary valve with occluding means substitutes for the function of the native aortic valve during its replacement. The native aortic valve is next dilated, and then ablated through deployment of low profile, elongated, sequentially delivered stents. The ablation stent(s) displace the native valve tissues and remain within the aortic annulus to receive and provide a structure for retaining the PAV. The PAV is delivered, positioned and deployed within the ablation stent(s) at the aortic annulus with precision and relative ease. Ablation of the native aortic valve removes the structural obstacles to precise PAV placement. The temporary aortic valve mediates the hemodynamic forces upon the devices as encountered by the surgeon following native valve ablation. The temporary valve also promotes patient stability through continuous coronary perfusion and a moderated transvalvular pressure gradient and regurgitation. Sequential delivery of low profile PAV components minimize the risk of trauma and injury to vascular tissues. Mathematical considerations for determining the optimum cross-sectional area for the temporary valve blood perfusion gaps are also described. | 01-29-2009 |
| 20120116439 | METHOD AND SYSTEM FOR BALLOON COUNTERPULSATION DURING AORTIC VALVE REPLACEMENT - Methods and systems for regulating aortic regurgitation during aortic valve replacement or repair procedures utilize a temporary aortic valve (TAV) catheter and a controller. The temporary aortic valve catheter has an expandable occlusion device which can partially occlude the aortic lumen during ventricular diastole with a lesser occlusion during ventricular systole. Exemplary balloon structures include multiple, independently inflatable balloons which are inflated in synchrony with the cardiac cycle by the controller. By controlling aortic regurgitation, the repair or replacement protocols can be conducted with less interference from blood flow. | 05-10-2012 |
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| 20080274505 | Polynucleotide encoding a novel TRP channel family member, LTRPC3, and splice variants thereof - The present invention provides novel polynucleotides encoding LTRPC3 polypeptides, fragments and homologues thereof. The present invention also provides polynucleotides encoding variants and splice variants of LTRPC3 polypeptides, LTRPC3b, LTRPC3c, LTRPC3d, LTRPC3e, and LTRPC3f, respectively. Also provided are vectors, host cells, antibodies, and recombinant and synthetic methods for producing said polypeptides. The invention further relates to diagnostic and therapeutic methods for applying these novel LTRPC3, LTRPC3b, LTRPC3c, LTRPC3d, LTRPC3e, and LTRPC3f polypeptides to the diagnosis, treatment, and/or prevention of various diseases and/or disorders related to these polypeptides. The invention further relates to screening methods for identifying agonists and antagonists of the polynucleotides and polypeptides of the present invention. | 11-06-2008 |
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| 20080293149 | ASSAYS FOR PREIMPLANTATION FACTOR AND PREIMPLANTATION FACTOR PEPTIDES - The present invention relates to assay methods used for detecting the presence of PIF, and to PIF peptides identified using this assay. In particular, the present invention relates to flow cytometry assays for detecting PIF. It is based, at least in part, on the observation that flow cytometry using fluorescently labeled anti-lymphocyte and anti-platelet antibodies demonstrated an increase in rosette formation in the presence of PIF. It is further based on the observation that flow cytometry demonstrated that monoclonal antibody binding to CD2 decreased in the presence of PIF. The present invention further relates to PIF peptides which, when added to Jurkat cell cultures, have been observed to either (i) decrease binding of anti-CD2 antibody to Jurkat cells; (ii) increase expression of CD2 in Jurkat cells; or (iii) decrease Jurkat cell viability. In additional embodiments, the present invention provides for ELISA assays which detect PIF by determining the effect of a test sample on the binding of anti-CD2 antibody to a CD2 substrate. | 11-27-2008 |
| 20080299677 | NEW ASSAYS FOR PREIMPLANTATION FACTOR AND PREIMPLANTATION FACTOR PEPTIDES - The present invention relates to assay methods used for detecting the presence of PIF, and to PIF peptides identified using this assay. In particular, the present invention relates to flow cytometry assays for detecting PIF. It is based, at least in part, on the observation that flow cytometry using fluorescently labeled anti-lymphocyte and anti-platelet antibodies demonstrated an increase in rosette formation in the presence of PIF. It is further based on the observation that flow cytometry demonstrated that monoclonal antibody binding to CD2 decreased in the presence of PIF. The present invention further relates to PIF peptides which, when added to Jurkat cell cultures, have been observed to either (i) decrease binding of anti-CD2 antibody to Jurkat cells; (ii) increase expression of CD2 in Jurkat cells; or (iii) decrease Jurkat cell viability. In additional embodiments, the present invention provides for ELISA assays which detect PIF by determining the effect of a test sample on the binding of anti-CD2 antibody to a CD2 substrate. | 12-04-2008 |
| 20080305468 | ASSAYS FOR PREIMPLANTATION FACTOR AND PREIMPLANTATION FACTOR PEPTIDES - The present invention relates to assay methods used for detecting the presence of PIF, and to PIF peptides identified using this assay. In particular, the present invention relates to flow cytometry assays for detecting PIF. It is based, at least in part, on the observation that flow cytometry using fluorescently labeled anti-lymphocyte and anti-platelet antibodies demonstrated an increase in rosette formation in the presence of PIF. It is further based on the observation that flow cytometry demonstrated that monoclonal antibody binding to CD2 decreased in the presence of PIF. The present invention further relates to PIF peptides which, when added to Jurkat cell cultures, have been observed to either (i) decrease binding of anti-CD2 antibody to Jurkat cells; (ii) increase expression of CD2 in Jurkat cells; or (iii) decrease Jurkat cell viability. In additional embodiments, the present invention provides for ELISA assays which detect PIF by determining the effect of a test sample on the binding of anti-CD2 antibody to a CD2 substrate. | 12-11-2008 |
| 20080305552 | ASSAYS FOR PREIMPLANTATION FACTOR AND PREIMPLANTATION FACTOR PEPTIDES - The present invention relates to assay methods used for detecting the presence of PIF, and to PIF peptides identified using this assay. In particular, the present invention relates to flow cytometry assays for detecting PIF. It is based, at least in part, on the observation that flow cytometry using fluorescently labeled anti-lymphocyte and anti-platelet antibodies demonstrated an increase in rosette formation in the presence of PIF. It is further based on the observation that flow cytometry demonstrated that monoclonal antibody binding to CD2 decreased in the presence of PIF. The present invention further relates to PIF peptides which, when added to Jurkat cell cultures, have been observed to either (i) decrease binding of anti-CD2 antibody to Jurkat cells; (ii) increase expression of CD2 in Jurkat cells; or (iii) decrease Jurkat cell viability. In additional embodiments, the present invention provides for ELISA assays which detect PIF by determining the effect of a test sample on the binding of anti-CD2 antibody to a CD2 substrate. | 12-11-2008 |
| 20090011427 | ASSAYS FOR PREIMPLANTATION FACTOR AND PREIMPLANTATION FACTOR PEPTIDES - The present invention relates to assay methods used for detecting the presence of PIF, and to PIF peptides identified using this assay. In particular, the present invention relates to flow cytometry assays for detecting PIF. It is based, at least in part, on the observation that flow cytometry using fluorescently labeled anti-lymphocyte and anti-platelet antibodies demonstrated an increase in rosette formation in the presence of PIF. It is further based on the observation that flow cytometry demonstrated that monoclonal antibody binding to CD2 decreased in the presence of PIF. The present invention further relates to PIF peptides which, when added to Jurkat cell cultures, have been observed to either (i) decrease binding of anti-CD2 antibody to Jurkat cells; (ii) increase expression of CD2 in Jurkat cells; or (iii) decrease Jurkat cell viability. In additional embodiments, the present invention provides for ELISA assays which detect PIF by determining the effect of a test sample on the binding of anti-CD2 antibody to a CD2 substrate. | 01-08-2009 |
| 20090029919 | Leptin peptide antagonists - Disclosed herein are peptides comprising a leptin sequence and methods for their use in preventing ObR signaling in a leptin-responsive cell. A leptin peptide of the present invention binds to but does not activate ObR signaling in a leptin-responsive cell, thereby inhibiting the up-regulatory effects of leptin on ObR signaling in the leptin-responsive cell. Administration of the peptide effectively prevents embryo implantation in a mammal to which the peptide has been administered. Also disclosed herein is a method for identifying a peptide antagonist of ObR, wherein the peptide comprises a leptin sequence. | 01-29-2009 |
| 20100197040 | ASSAYS FOR PREIMPLANTATION FACTOR AND PREIMPLANTATION FACTOR PEPTIDES - The present invention relates to assay methods used for detecting the presence of PIF, and to PIF peptides identified using this assay. In particular, the present invention relates to flow cytometry assays for detecting PIF. It is based, at least in part, on the observation that flow cytometry using fluorescently labeled anti-lymphocyte and anti-platelet antibodies demonstrated an increase in rosette formation in the presence of PIF. It is further based on the observation that flow cytometry demonstrated that monoclonal antibody binding to CD2 decreased in the presence of PIF. The present invention further relates to PIF peptides which, when added to Jurkat cell cultures, have been observed to either (i) decrease binding of anti-CD2 antibody to Jurkat cells; (ii) increase expression of CD2 in Jurkat cells; or (iii) decrease Jurkat cell viability. In additional embodiments, the present invention provides for ELISA assays which detect PIF by determining the effect of a test sample on the binding of anti-CD2 antibody to a CD2 substrate. | 08-05-2010 |
| 20110190473 | LEPTIN PEPTIDE ANTAGONISTS - Disclosed herein are peptides comprising a leptin sequence and methods for their use in preventing ObR signaling in a leptin-responsive cell. A leptin peptide of the present invention binds to but does not activate ObR signaling in a leptin-responsive cell, thereby inhibiting the up-regulatory effects of leptin on ObR signaling in the leptin-responsive cell. Administration of the peptide effectively prevents embryo implantation in a mammal to which the peptide has been administered. Also disclosed herein is a method for identifying a peptide antagonist of ObR, wherein the peptide comprises a leptin sequence. | 08-04-2011 |
| 20120009605 | NEW ASSAYS FOR PREIMPLANTATION FACTOR AND PREIMPLANTATION FACTOR PEPTIDES - The present invention relates to assay methods used for detecting the presence of PIF, and to PIF peptides identified using this assay. In particular, the present invention relates to flow cytometry assays for detecting PIF. It is based, at least in part, on the observation that flow cytometry using fluorescently labeled anti-lymphocyte and anti-platelet antibodies demonstrated an increase in rosette formation in the presence of PIF. It is further based on the observation that flow cytometry demonstrated that monoclonal antibody binding to CD2 decreased in the presence of PIF. The present invention further relates to PIF peptides which, when added to Jurkat cell cultures, have been observed to either (i) decrease binding of anti-CD2 antibody to Jurkat cells; (ii) increase expression of CD2 in Jurkat cells; or (iii) decrease Jurkat cell viability. In additional embodiments, the present invention provides for ELISA assays which detect PIF by determining the effect of a test sample on the binding of anti-CD2 antibody to a CD2 substrate. | 01-12-2012 |
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| 20090173980 | PROVIDING ISOLATION FOR WORDLINE PASSING OVER DEEP TRENCH CAPACITOR - A memory cell has an access transistor and a capacitor with an electrode disposed within a deep trench. STI oxide covers at least a portion of the electrode, and a liner covers a remaining portion of the electrode. The liner may be a layer of nitride over a layer of oxide. Some of the STI may cover a portion of the liner. In a memory array a pass wordline may be isolated from the electrode by the STI oxide and the liner. | 07-09-2009 |
| 20090174031 | DRAM HAVING DEEP TRENCH CAPACITORS WITH LIGHTLY DOPED BURIED PLATES - By controlling buried plate doping level and bias condition, different capacitances can be obtained from capacitors on the same chip with the same layout and deep trench process. The capacitors may be storage capacitors of DRAM/eDRAM cells. The doping concentration may be less than 3E19cm−3, a voltage difference between the biases of the buried electrodes may be at least 0.5V, and a capacitance of one capacitor may be at least 1.2 times, such as 2.0 times the capacitance of another capacitor. | 07-09-2009 |
| 20090184356 | DEEP TRENCH CAPACITOR IN A SOI SUBSTRATE HAVING A LATERALLY PROTRUDING BURIED STRAP - A deep trench is formed to a depth midway into a buried insulator layer of a semiconductor-on-insulator (SOI) substrate. A top semiconductor layer is laterally recessed by an isotropic etch that is selective to the buried insulator layer. The deep trench is then etched below a bottom surface of the buried insulator layer. Ion implantation is performed at an angle into the deep trench to dope the sidewalls of the deep trench beneath the buried insulator layer, while the laterally recessed sidewalls of the top semiconductor layer are not implanted with dopant ions. A node dielectric and trench fill materials are deposited into the deep trench. A buried strap has an upper buried strap sidewall that is offset from a lower buried strap sidewall and a deep trench sidewall. | 07-23-2009 |
| 20090240875 | CONTENT ADDRESSABLE MEMORY WITH HIDDEN TABLE UPDATE, DESIGN STRUCTURE AND METHOD - Disclosed are embodiments of memory circuit having two discrete memory devices with two discrete memory arrays that store essentially identical data banks. The first device is a conventional memory adapted to perform all maintenance operations that require read functions (i.e., all update and refresh operations). The second device is a DRAM-based CAM device adapted to perform parallel search and overwrite operations only. Performance of overwrite operations by the second device occurs in conjunction with performance of maintenance operations by the first device so that corresponding memory cells in the two devices store essentially identical data values. Since the data banks in the memory devices are essentially identical and since maintenance and parallel search operations are not performed by the same device, the parallel search operations can be performed without interruption. Also disclosed are embodiments of an associated design structure and method. | 09-24-2009 |
| 20090289291 | SOI DEEP TRENCH CAPACITOR EMPLOYING A NON-CONFORMAL INNER SPACER - A bottle shaped trench for an SOI capacitor is formed by a simple processing sequence. A non-conformal dielectric layer with an optional conformal dielectric diffusion barrier layer underneath is formed on sidewalls of a deep trench. Employing an isotropic etch, the non-conformal dielectric layer is removed from a bottom portion of the deep trench, leaving a dielectric spacer covering sidewalls of the buried insulator layer and the top semiconductor layer. The bottom portion of the deep trench is expanded to form a bottle shaped trench, and a buried plated is formed underneath the buried insulator layer. The dielectric spacer may be recessed during formation of a buried strap to form a graded thickness dielectric collar around the upper portion of an inner electrode. Alternately, the dielectric spacer may be removed prior to formation of a buried strap. | 11-26-2009 |
| 20100237417 | Through-Gate Implant for Body Dopant - The present invention, provides a semiconductor device including a substrate including a semiconductor layer overlying an insulating layer, wherein a back gate structure is present underlying the insulating layer and a front gate structure on the semiconductor layer; a channel dopant region underlying the front gate structure of the substrate, wherein the channel dopant region has a first concentration present at an interface of the semiconductor layer and the insulating layer and at least a second concentration present at the interface of the front gate structure and the semiconductor layer, wherein the first concentration is greater than the second concentration; and a source region and drain region present in the semiconductor layer of the substrate. | 09-23-2010 |
| 20110092043 | DEEP TRENCH CAPACITOR IN A SOI SUBSTRATE HAVING A LATERALLY PROTRUDING BURIED STRAP - A deep trench is formed to a depth midway into a buried insulator layer of a semiconductor-on-insulator (SOI) substrate. A top semiconductor layer is laterally recessed by an isotropic etch that is selective to the buried insulator layer. The deep trench is then etched below a bottom surface of the buried insulator layer. Ion implantation is performed at an angle into the deep trench to dope the sidewalls of the deep trench beneath the buried insulator layer, while the laterally recessed sidewalls of the top semiconductor layer are not implanted with dopant ions. A node dielectric and trench fill materials are deposited into the deep trench. A buried strap has an upper buried strap sidewall that is offset from a lower buried strap sidewall and a deep trench sidewall. | 04-21-2011 |
| 20110291169 | REDUCED CORNER LEAKAGE IN SOI STRUCTURE AND METHOD - A structural alternative to retro doping to reduce transistor leakage is provided by providing a liner in a trench, undercutting a conduction channel region in an active semiconductor layer, etching a side, corner and/or bottom of the conduction channel where the undercut exposes semiconductor material in the active layer and replacing the removed portion of the conduction channel with insulator. This shaping of the conduction channel increases the distance to adjacent circuit elements which, if charged, could otherwise induce a voltage and cause a change in back-channel threshold in regions of the conduction channel and narrows and reduces cross-sectional area of the channel where the conduction in the channel is not well-controlled; both of which effects significantly reduce leakage of the transistor. | 12-01-2011 |
| 20110316061 | STRUCTURE AND METHOD TO CONTROL BOTTOM CORNER THRESHOLD IN AN SOI DEVICE - Semiconductor structures and methods to control bottom corner threshold in a silicon-on-insulator (SOI) device. A method includes doping a corner region of a semiconductor-on-insulator (SOI) island. The doping includes tailoring a localized doping of the corner region to reduce capacitive coupling of the SOI island with an adjacent structure. | 12-29-2011 |
| 20120086077 | FET STRUCTURES WITH TRENCH IMPLANTATION TO IMPROVE BACK CHANNEL LEAKAGE AND BODY RESISTANCE - An FET structure on a semiconductor substrate which includes forming recesses for a source and a drain of the gate structure on a semiconductor substrate, halo implanting regions through the bottom of the source and drain recesses, the halo implanted regions being underneath the gate stack, implanting junction butting at the bottom of the source and drain recesses, and filling the source and drain recesses with a doped epitaxial material. In exemplary embodiments, the semiconductor substrate is a semiconductor on insulator substrate including a semiconductor layer on a buried oxide layer. In exemplary embodiments, the junction butting and halo implanted regions are in contact with the buried oxide layer. In other exemplary embodiments, there is no junction butting. In exemplary embodiments, halo implants implanted to a lower part of the FET body underneath the gate structure provide higher doping level in lower part of the FET body to reduce body resistance, without interfering with FET threshold voltage. | 04-12-2012 |
| 20120122303 | SEMICONDUCTOR STRUCTURE HAVING WIDE AND NARROW DEEP TRENCHES WITH DIFFERENT MATERIALS - Disclosed is a method of forming a semiconductor device structure in a semiconductor layer. The method includes forming a first trench of a first width and a second trench of a second width in the semiconductor layer; depositing a layer of first material which conforms to a wall of the first trench but does not fill it and which fills the second trench; removing the first material from the first trench, the first material remaining in the second trench; depositing a second material into and filling the first trench and over a top of the first material in the second trench; and uniformly removing the second material from the top of the first material in the second trench, wherein the first trench is filled with the second material and the second trench is filled with the first material and wherein the first material is different from the second material. | 05-17-2012 |
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| 20090309104 | SYSTEMS AND METHODS FOR CREATING CRYSTALLOGRAPHIC-ORIENTATION CONTROLLED poly-SILICON FILMS - In accordance with one aspect, the present invention provides a method for providing polycrystalline films having a controlled microstructure as well as a crystallographic texture. The methods provide elongated grains or single-crystal islands of a specified crystallographic orientation. In particular, a method of processing a film on a substrate includes generating a textured film having crystal grains oriented predominantly in one preferred crystallographic orientation; and then generating a microstructure using sequential lateral solidification crystallization that provides a location-controlled growth of the grains orientated in the preferred crystallographic orientation. | 12-17-2009 |
| 20110108108 | FLASH LIGHT ANNEALING FOR THIN FILMS - A method of making a crystalline film includes providing a film comprising seed grains of a selected crystallographic surface orientation on a substrate; irradiating the film using a pulsed light source to provide pulsed melting of the film under conditions that provide a mixed liquid/solid phase and allowing the mixed solid/liquid phase to solidify under conditions that provide a textured polycrystalline layer having the selected surface orientation. One or more irradiation treatments may be used. The film is suitable for use in solar cells. | 05-12-2011 |
| 20110121306 | Systems and Methods for Non-Periodic Pulse Sequential Lateral Solidification - The disclosed systems and method for non-periodic pulse sequential lateral solidification relate to processing a thin film. The method for processing a thin film, while advancing a thin film in a selected direction, includes irradiating a first region of the thin film with a first laser pulse and a second laser pulse and irradiating a second region of the thin film with a third laser pulse and a fourth laser pulse, wherein the time interval between the first laser pulse and the second laser pulse is less than half the time interval between the first laser pulse and the third laser pulse. In some embodiments, each pulse provides a shaped beam and has a fluence that is sufficient to melt the thin film throughout its thickness to form molten zones that laterally crystallize upon cooling. In some embodiments, the first and second regions are adjacent to each other. In some embodiments, the first and second regions are spaced a distance apart. | 05-26-2011 |
