Patent application number | Description | Published |
20090032828 | III-Nitride Device Grown on Edge-Dislocation Template - A semiconductor light emitting device includes a wurtzite III-nitride semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A template layer and a dislocation bending layer are grown before the light emitting layer. The template layer is grown such that at least 70% of the dislocations in the template layer are edge dislocations. At least some of the edge dislocations in the template layer continue into the dislocation bending layer. The dislocation bending layer is grown to have a different magnitude of strain than the template layer. The change in strain at the interface between the template layer and the dislocation bending layer causes at least some of the edge dislocations in the template layer to bend to a different orientation in the dislocation bending layer. Semiconductor material grown above the bent edge dislocations may exhibit reduced strain. | 02-05-2009 |
20090152584 | LIGHT EMITTING DEVICE WITH BONDED INTERFACE - In some embodiments of the invention, a transparent substrate AlInGaP device includes an etch stop layer that may be less absorbing than a conventional etch stop layer. In some embodiments of the invention, a transparent substrate AlInGaP device includes a bonded interface that may be configured to give a lower forward voltage than a conventional bonded interface. Reducing the absorption and/or the forward voltage in a device may improve the efficiency of the device. | 06-18-2009 |
20090173956 | CONTACT FOR A SEMICONDUCTOR LIGHT EMITTING DEVICE - An AlGaInP light emitting device is formed as a thin, flip chip device. The device includes a semiconductor structure comprising an AlGaInP light emitting layer disposed between an n-type region and a p-type region. N- and p-contacts electrically connected to the n- and p-type regions are both formed on the same side of the semiconductor structure. The semiconductor structure is connected to the mount via the contacts. The growth substrate is removed from the semiconductor structure and the thick transparent substrate is omitted, such that the total thickness of semiconductor layers in the device is less than 15 μm in some embodiments, less than 10 μm in some embodiments. The top side of the semiconductor structure may be textured. | 07-09-2009 |
20090309111 | SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING GRADED REGION - One or more regions of graded composition are included in a III-P light emitting device, to reduce the V | 12-17-2009 |
20110284890 | LIGHT EMITTING DEVICE GROWN ON A RELAXED LAYER - In some embodiments of the invention, a device includes a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, and a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region. The second semiconductor layer is disposed between the first semiconductor layer and the third semiconductor layer. The third semiconductor layer is disposed between the second semiconductor layer and the light emitting layer. A difference between the in-plane lattice constant of the first semiconductor layer and the bulk lattice constant of the third semiconductor layer is no more than 1%. A difference between the in-plane lattice constant of the first semiconductor layer and the bulk lattice constant of the second semiconductor layer is at least 1%. The third semiconductor layer is at least partially relaxed. | 11-24-2011 |
20120187372 | CONTACT FOR A SEMICONDUCTOR LIGHT EMITTING DEVICE - An AlGaInP light emitting device is formed as a thin, flip chip device. The device includes a semiconductor structure comprising an AlGaInP light emitting layer disposed between an n-type region and a p-type region. N- and p-contacts electrically connected to the n- and p-type regions are both formed on the same side of the semiconductor structure. The semiconductor structure is connected to the mount via the contacts. The growth substrate is removed from the semiconductor structure and the thick transparent substrate is omitted, such that the total thickness of semiconductor layers in the device is less than 15 μm in some embodiments, less than 10 μm in some embodiments. The top side of the semiconductor structure may be textured. | 07-26-2012 |
20140162389 | LIGHT EMITTING DEVICE GROWN ON A RELAXED LAYER - In some embodiments of the invention, a device includes a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, and a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region. The second semiconductor layer is disposed between the first semiconductor layer and the third semiconductor layer. The third semiconductor layer is disposed between the second semiconductor layer and the light emitting layer. A difference between the in-plane lattice constant of the first semiconductor layer and the bulk lattice constant of the third semiconductor layer is no more than 1%. A difference between the in-plane lattice constant of the first semiconductor layer and the bulk lattice constant of the second semiconductor layer is at least 1%. The third semiconductor layer is at least partially relaxed. | 06-12-2014 |
20140183595 | LIGHT EMITTING DEVICE WITH BONDED INTERFACE - In some embodiments of the invention, a transparent substrate AlInGaP device includes an etch stop layer that may be less absorbing than a conventional etch stop layer. In some embodiments of the invention, a transparent substrate AlInGaP device includes a bonded interface that may be configured to give a lower forward voltage than a conventional bonded interface. Reducing the absorption and/or the forward voltage in a device may improve the efficiency of the device. | 07-03-2014 |