| Patent application number | Description | Published |
|---|
| 20080210163 | Independent Radiant Gas Preheating for Precursor Disassociation Control and Gas Reaction Kinetics in Low Temperature CVD Systems - A method and apparatus for delivering precursor materials to a processing chamber is described. The apparatus includes a gas distribution assembly having multiple gas delivery zones. Each zone may include a plenum having an inlet for receiving a precursor gas and at least one source of non-thermal energy, such as an infrared light source. The at least one source of non-thermal energy is may be varied to control the intensity of wavelengths from the infrared light source. | 09-04-2008 |
| 20090272719 | SYSTEM AND METHOD FOR PEDESTAL ADJUSTMENT - A pedestal positioning assembly system for use in a substrate processing system includes a pedestal rigidly attached to a pedestal shaft, a reference rigidly attached to the substrate processing system, a lateral adjustment assembly to adjust a lateral location of the pedestal relative to the reference, and a vertical adjustment assembly to adjust a tilt of the pedestal relative to the reference. The lateral adjustment assembly and the vertical adjustment assembly are external to a processing chamber and are coupled to the pedestal disposed within the processing chamber through the pedestal shaft. The reference can be a ring and the lateral adjustment assembly substantially centers the pedestal within the ring. A method of adjusting a pedestal includes leveling the pedestal, translating the pedestal, calibrating the pedestal height to a preheat ring level, and checking the level and location of the pedestal while rotating the pedestal. | 11-05-2009 |
| 20090276097 | NON-CONTACT SUBSTRATE SUPPORT POSITION SENSING SYSTEM AND CORRESPONDING ADJUSTMENTS - A substrate processing system includes an optical measurement assembly coupled to an exterior of a processing chamber that has a portion that is transparent. The processing chamber includes a reference object and a pedestal for supporting a work piece. The optical measurement assembly measures a lateral location, a height and a tilt of the pedestal by transmitting light into the processing chamber through the transparent portion of the processing chamber and detecting a reflected light from both the reference object and the portion of the pedestal after the reflected light leaves the chamber through the transparent portion of the processing chamber. A method of adjusting a pedestal includes analyzing the reflected light and leveling the pedestal, translating the pedestal, calibrating the pedestal height to a preheat ring level, and checking the level and location of the pedestal in response to the analyzed reflected light. | 11-05-2009 |
| 20100075488 | CVD REACTOR WITH MULTIPLE PROCESSING LEVELS AND DUAL-AXIS MOTORIZED LIFT MECHANISM - An apparatus for processing a substrate, comprising a processing chamber and a substrate support and lift pin assembly disposed within the chamber. The substrate support and lift pin assembly are coupled to a lift mechanism that controls positioning of the substrate support and the lift pins and provides rotation for the substrate support. The lift mechanism includes at least one sensor capable of generating a signal when clearance between the substrate support and the lift pins allows rotation of the substrate support to begin. The substrate support capable of concurrent axial motion and rotation may be used in a processing chamber comprising multiple processing zones separated by edge rings. Substrates may be subjected to successive or cyclical processes by moving between the multiple processing zones. | 03-25-2010 |
| 20100086784 | METHODS AND APPARATUS FOR IMPROVED AZIMUTHAL THERMAL UNIFORMITY OF A SUBSTRATE - Methods and apparatus for providing an improved azimuthal thermal uniformity of a substrate are provided herein. In some embodiments, a substrate support for use in a semiconductor process chamber includes a susceptor plate; and a supporting member to support a backside of the susceptor plate proximate an outer edge thereof, wherein the supporting member substantially covers the backside of the susceptor plate. In some embodiments, the substrate support is disposed in a process chamber having at least some lamps disposed below the supporting member and utilized for heating the back side of the susceptor plate. | 04-08-2010 |
| 20100120259 | METHOD AND APPARATUS TO ENHANCE PROCESS GAS TEMPERATURE IN A CVD REACTOR - Methods and apparatus for controlling temperature and flow characteristics of process gases in a process chamber have been provided herein. In some embodiments, an apparatus for controlling temperature and flow characteristics of a process gas in a process chamber may include a gas pre-heat ring configured to be disposed about a substrate and having a labyrinthine conduit disposed therein, wherein the labyrinthine conduit has an inlet and outlet to facilitate the flow of the process gas therethrough. | 05-13-2010 |
| 20100124248 | PYROMETRY FOR SUBSTRATE PROCESSING - A substrate processing system includes a processing chamber, a pedestal for supporting a substrate disposed within the processing chamber, and an optical pyrometry assembly coupled to the processing chamber to measure an emitted light originating substantially from a portion of the pedestal or substrate. The optical pyrometry assembly further includes a light receiver, and an optical detector. The optical pyrometry assembly receives a portion of the emitted light, and a temperature of the substrate is determined from an intensity of the portion of the emitted light near at least one wavelength. A method of measuring a temperature of a substrate during processing, includes disposing a light pipe near a portion of the pedestal supporting the substrate or pedestal, shielding the end of the light pipe from stray light so that the end of the light pipe receives light from the portion of the pedestal or substrate, purging the end of the light pipe with a gas to reduce contamination of the end of the light pipe, detecting a portion of the light emitted from the pedestal and received by the light pipe, and determining a temperature of the substrate from the intensity of the portion of the emitted light from the pedestal or the substrate near at least one wavelength. | 05-20-2010 |
| 20110259432 | INDEPENDENT RADIANT GAS PREHEATING FOR PRECURSOR DISASSOCIATION CONTROL AND GAS REACTION KINETICS IN LOW TEMPERATURE CVD SYSTEMS - A method and apparatus for delivering precursor materials to a processing chamber is provided. In one embodiment, a deposition apparatus is provided. The apparatus includes a chamber having a longitudinal axis, and a gas distribution assembly coupled to a sidewall of the chamber. The gas distribution assembly comprises a plurality of plenums coupled to one or more gas sources, an energy source positioned to provide energy to each of the plurality of plenums, and a variable power source coupled to the energy source, wherein the gas distribution assembly provides a flow path through the chamber that is normal to the longitudinal axis of the chamber. | 10-27-2011 |
