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| 20080211040 | NANOSENSORS - Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described. | 09-04-2008 |
| 20090057650 | Nanoscale wires and related devices - The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like. | 03-05-2009 |
| 20100155698 | Nanoscale wires and related devices - The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like. | 06-24-2010 |
| 20100243990 | NANOSENSORS - Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described. | 09-30-2010 |
| 20100258784 | Method Of Efficient Coupling Of Light From Single-Photon Emitter To Guided Radiation Localized To Sub-Wavelength Dimensions On Conducting Nanowires - A cavity free, broadband approach for engineering photon emitter interactions via sub-wavelength confinement of optical fields near metallic nanostructures. When a single CdSe quantum dot (QD) is optically excited in close proximity to a silver nanowire (NW), emission from the QD couples directly to guided surface plasmons in the NW, causing the wire's ends to light up. Nonclassical photon correlations between the emission from the QD and the ends of the NW demonstrate that the latter stems from the generation of single, quantized plasmons. Results from a large number of devices show that the efficient coupling is accompanied by more than 2.5-fold enhancement of the QD spontaneous emission, in a good agreement with theoretical predictions. | 10-14-2010 |
| 20110315962 | NANOSENSORS - Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized Nanodetector devices are described. | 12-29-2011 |
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| 20090321882 | EPITAZIAL GROWTH OF CRYSTALLINE MATERIAL - A device includes an epitaxially grown crystalline material within an area confined by an insulator. A surface of the crystalline material has a reduced roughness. One example includes obtaining a surface with reduced roughness by creating process parameters which result in the dominant growth component of the crystal to be supplied laterally from side walls of the insulator. In a preferred embodiment, the area confined by the insulator is an opening in the insulator having an aspect ratio sufficient to trap defects using an ART technique. | 12-31-2009 |
| 20100072515 | FABRICATION AND STRUCTURES OF CRYSTALLINE MATERIAL - A surface of the first semiconductor crystalline material has a reduced roughness. A semiconductor device includes a low defect, strained second semiconductor crystalline material over the surface of the first crystalline material. A surface of the strained second semiconductor crystalline material has a reduced roughness. One example includes obtaining a surface with reduced roughness by creating process parameters that reduce impurities at an interfacial boundary between the first and second semiconductor crystalline materials. In one embodiment, the first semiconductor crystalline material can be confined by an opening in an insulator having an aspect ratio sufficient to trap defects using Aspect Ratio Trapping techniques. | 03-25-2010 |
| 20110121310 | SOLID STATE LIGHTING DEVICES WITH SELECTED THERMAL EXPANSION AND/OR SURFACE CHARACTERISTICS, AND ASSOCIATED METHODS - Solid state lighting devices with selected thermal expansion and/or surface characteristics, and associated methods are disclosed. A method in accordance with a particular embodiment includes forming an SSL (solid state lighting) formation structure having a formation structure coefficient of thermal expansion (CTE), selecting a first material of an interlayer structure to have a first material CTE greater than the substrate CTE, and selecting a second material of the interlayer structure based at least in part on the second material having a second material CTE less than the first material CTE. The method can further include forming the interlayer structure over the SSL formation structure by disposing (at least) a first layer of the first material over the SSL formation structure, a portion of the second material over the first material, and a second layer of the first material over the second material. The SSL formation structure supports an SSL emitter material, and the method further includes counteracting a force placed on the formation structure by the first material, by virtue of the difference between the second material CTE and the first material CTE. In other embodiments, the SSL formation structure can have an off-cut angle with a non-zero value of up to about 4.5 degrees. | 05-26-2011 |
| 20120098034 | Epitaxial Growth of Crystalline Material - A device includes an epitaxially grown crystalline material within an area confined by an insulator. A surface of the crystalline material has a reduced roughness. One example includes obtaining a surface with reduced roughness by creating process parameters which result in the dominant growth component of the crystal to be supplied laterally from side walls of the insulator. In a preferred embodiment, the area confined by the insulator is an opening in the insulator having an aspect ratio sufficient to trap defects using an ART technique. | 04-26-2012 |
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| 20100216277 | Formation of Devices by Epitaxial Layer Overgrowth - Methods and structures are provided for formation of devices, e.g., solar cells, on substrates including, e.g., lattice-mismatched materials, by the use of aspect ratio trapping (ART) and epitaxial layer overgrowth (ELO). In general, in a first aspect, embodiments of the invention may include a method of forming a structure. The method includes forming a first opening in a masking layer disposed over a substrate that includes a first semiconductor material. A first layer, which includes a second semi-conductor material lattice-mismatched to the first semiconductor material, is formed within the first opening. The first layer has a thickness sufficient to extend above a top surface of the masking layer. A second layer, which includes the second semiconductor material, is formed on the first layer and over at least a portion of the masking layer. A vertical growth rate of the first layer is greater than a lateral growth rate of the first layer and a lateral growth rate of the second layer is greater than a vertical growth rate of the second layer. | 08-26-2010 |
| 20120068226 | Formation of Devices by Epitaxial Layer Overgrowth - Methods and structures are provided for formation of devices on substrates including, e.g., lattice-mismatched materials, by the use of aspect ratio trapping and epitaxial layer overgrowth. A method includes forming an opening in a masking layer disposed over a substrate that includes a first semiconductor material. A first layer, which includes a second semiconductor material lattice-mismatched to the first semiconductor material, is formed within the opening. The first layer has a thickness sufficient to extend above a top surface of the masking layer. A second layer, which includes the second semiconductor material, is formed on the first layer and over at least a portion of the masking layer. A vertical growth rate of the first layer is greater than a lateral growth rate of the first layer and a lateral growth rate of the second layer is greater than a vertical growth rate of the second layer. | 03-22-2012 |
| 20120199876 | Defect Reduction Using Aspect Ratio Trapping - Lattice-mismatched epitaxial films formed proximate non-crystalline sidewalls. Embodiments of the invention include formation of facets that direct dislocations in the films to the sidewalls. | 08-09-2012 |
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| 20100224404 | DUAL ACCESS LUMINAIRE JUNCTION BOX - A recessed fixture having a junction box positioned adjacent at least one ceiling support structure comprises a recessed luminaire fixture, the junction box mounted to the recessed luminaire frame, the junction box being horizontally oriented, the junction box having a first facing junction box door and a second junction box door, the first junction box door and the second junction box door being oppositely positioned and pivotally connected to a junction box housing, the first and second junction doors being in a substantially horizontal orientation in a closed position, one of the first junction box door and the second junction box door facing substantially upwardly and the other of the first junction box door and the second junction box door facing substantially downwardly, wherein the horizontal orientation allows the junction box doors to be positioned adjacent a ceiling structure without limiting opening of the junction box doors. | 09-09-2010 |
| 20110103062 | RECESSED LIGHTING FIXTURE WITH SOCKET ADJUSTMENT MECHANISM - A recessed luminaire with adjustable socket assembly comprises a housing having a sidewall, a top wall and a lower opening allowing light output, a socket adjustment assembly disposed in the housing, the socket adjustment assembly having: a lamp socket connected to a socket carriage, a track having a socket carriage movably positioned on the track, wherein the carriage moves along the track and the lamp socket is movable in at least one of a vertical or a horizontal direction. | 05-05-2011 |
| 20110103068 | RECESSED LIGHTING REMODELER FIXTURE WITH SLIDING HOUSING - A recessed luminaire with adjustable socket assembly comprises a housing having a sidewall, a top wall and a lower opening allowing light output, a socket adjustment assembly disposed in the housing, the socket adjustment assembly having: a lamp socket connected to a socket carriage, a track having a socket carriage movably positioned on the track wherein the carriage moves along the track and the lamp socket is movable in at least one of a vertical or a horizontal direction. | 05-05-2011 |
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| 20120171617 | POLYMERS, PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS - Provided are polymers that include a unit comprising a particular acetal moiety and a unit comprising a lactone moiety. Also provided are photoresist compositions containing such a polymer, substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The polymers, compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices. | 07-05-2012 |
| 20120219901 | PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS - Provided are photoresist compositions useful in forming photolithographic patterns. Also provided are substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices. | 08-30-2012 |
| 20120219902 | PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS - Provided are photoresist compositions useful in forming photolithographic patterns. Also provided are substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices. | 08-30-2012 |
| 20120288794 | POLYMERS, PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS - Provided are polymers containing a unit having a particular acetal moiety and photoresist compositions containing such a polymer. Also provided are substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The polymers, photoresist compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices. | 11-15-2012 |
| 20130011783 | MONOMERS, POLYMERS, PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS - Provided are (meth)acrylate monomers containing acetal moieties, polymers containing a unit formed from such a monomer and photoresist compositions containing such a polymer. The monomers, polymers and photoresist compositions are useful in forming photolithographic patterns. Also provided are substrates coated with the photoresist compositions, methods of forming photolithographic patterns and electronic devices. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices. | 01-10-2013 |
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| 20090032700 | THREE-DIMENSIONAL RF ION TRAPS WITH HIGH ION CAPTURE EFFICIENCY - In a three-dimensional Paul RF ion trap at least one of the ring electrode and end cap electrodes is structured to produce a high capture efficiency for analyte ions introduced into the trap. The electrode structuring may be produced by an electrode surface profile having edges or protrusions, resulting in a scattering reflection of the introduced ions. Alternatively, at least one electrode may be formed by physically separate electrode components. In one embodiment, the trap can be switched between operating as a linear ion trap with good capture efficiency and operating as a three-dimensional ion trap with good ion reaction conditions. | 02-05-2009 |
| 20110121170 | APPARATUS AND METHOD FOR PARALLEL FLOW ION MOBILITY SPECTROMETRY COMBINED WITH MASS SPECTROMETRY - Analyte ions entrained in a carrier gas are analyzed by parallel flow ion mobility spectrometry prior to analysis by a mass analyzer. An extended ion funnel is located in the vacuum system of the mass analyzer and has an ion focusing section and an ion mobility analyzing section. The carrier gas together with entrained ions is introduced into the ion focusing section where the ions are focused to the axis of the funnel by applied RF voltages. In the ion mobility section, the action of an RF quadrupolar field, the movement of the carrier gas and axial DC field, separates the ions on the basis of their mobilities. The mobility separated ions are released into the mass analyzer where the ions may be further separated on the basis of mass. | 05-26-2011 |
| 20110139976 | Method for operating three-dimensional RF ion traps with high ion capture efficiency - In a three-dimensional Paul RF ion trap the ring electrode and end cap electrodes are formed from pairs of pole rods. This multipole rod system is then operated as a linear ion trap with a constant field distribution along the multipole rod system. While the system is operating as a linear ion trap, analyte ions are introduced and stored within the linear ion trap. After the ions have been stored, a single-phase RF voltage is supplied to all rods of a middle segment thus forming a three-dimensional ion trap, thereby collecting the ions in a spherical cloud within this middle segment. The collected analyte ions can then be reacted in the three-dimensional ion trap and the product ions resulting from the reactions can be ejected for mass analysis. | 06-16-2011 |
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| 20090127455 | Ion guide for mass spectrometers - The present invention relates generally to mass spectrometry and the analysis of chemical samples, and more particularly to ion guides for use therein. The invention described herein comprises an improved method and apparatus for transporting ions from a first pressure region in a mass spectrometer to a second pressure region therein. More specifically, the present invention provides a segmented ion funnel for more efficient use in mass spectrometry (particularly with ionization sources) to transport ions from the first pressure region to the second pressure region. | 05-21-2009 |
| 20120273670 | Spectrum Acquisition Modes For Ion Mobility Spectrometers Using Trapped Ions - In an ion mobility spectrometer in which a gas flows through a gas-tight tube with a radially quadrupolar RF field therein and blows ions against a DC electric field barrier, a mobility scan with a mobility scale that is linear in time is obtained by holding the height of the DC electric field barrier constant while changing the pressure and temperature conditions of the flowing gas. Alternatively, the mobility scan is performed by holding the pressure and temperature conditions of the flowing gas constant and reducing the height of the DC electric field barrier non-linearly with respect to time. | 11-01-2012 |
| 20120273673 | Selective Ion Mobility Spectrometer - Ions with a predetermined range of ion mobilities are produced by filtering input ions with at least two consecutive ion mobility high pass and/or low pass filters. Each ion mobility filter is formed by entraining ions in a moving gas and applying a DC electric field to the ions which causes the ions to move in a direction opposite to the gas flow. An ion mobility high pass filter is formed when the DC electric field drives the ions against the flow of gas, whereas an ion mobility low pass filter is formed when a the gas flow drives entrained ions against an DC electric field barrier. | 11-01-2012 |
| 20120273674 | Resolution Enhancement For Ion Mobility Spectrometers - In an ion mobility spectrometer in which a gas pushes ions along a spectrometer axis against and over an electrical field barrier, the electric field barrier is generated with a plateau of slightly increasing height along the axis of the spectrometer. Alternately, the electric filed barrier may have a plateau with constant height, but the gas flow decreases in velocity along the axis of the spectrometer in the vicinity of the plateau. | 11-01-2012 |
| 20120286156 | SELECTIVE ION MOBILITY SPECTROMETER - Ions with a predetermined ion mobility range are produced by filtering ions entrained in a stream of moving gas with two ion mobility low pass filters located consecutively in the gas stream. Each filter is formed by applying a DC electric field to the gas stream which causes the ions to move in a direction opposite to the gas flow. Ions are collected between the two filters and transferred to a detector or analyzing device. In one embodiment, the maximum field strength of the electric field barrier in the first ion mobility low pass filter is continued as a plateau of essentially constant field strength up to the electric field barrier in the second ion mobility low pass filter, which has a maximum field strength higher that the maximum field strength of the electric field barrier in the first ion mobility low pass filter. | 11-15-2012 |
| 20120298860 | MEANS AND METHOD FOR FIELD ASYMMETRIC ION MOBILITY SPECTROMETRY COMBINED WITH MASS SPECTROMETRY - Analyte ions are analyzed first by field asymmetric ion mobility spectrometry (FAIMS) before being analyzed by a mass analyzer. Analyte ions are produced at near atmospheric pressure and transferred via a dielectric capillary into the vacuum system of the mass analyzer. While passing through the capillary, the ions are analyzed by FAIMS via electrodes on the interior wall of the capillary. Improved ion transmission is achieved by providing smooth geometric transitions between the channel in FAIMS analyzer and the channel in the remainder of the capillary. | 11-29-2012 |
| 20120305758 | ABRIDGED MULTIPOLE STRUCTURE FOR THE TRANSPORT AND SELECTION OF IONS IN A VACUUM SYSTEM - An abridged multipole structure for the transport and selection of ions along a central axis in a vacuum system is constructed from a plurality of rectilinear electrode structures, each having a substantially planar face with a first dimension and a second dimension perpendicular to the first dimension. When a voltage is applied across the second dimension, an electrical potential is produced at the planar face whose amplitude is a linear function of position along the second dimension. Two electrode structures can be arranged parallel to each other with the first dimension extending along the central axis or more electrodes structures can be arranged to form multipole structures with various polygonal cross sections. | 12-06-2012 |
| 20120305759 | ABRIDGED MULTIPOLE STRUCTURE FOR THE TRANSPORT, SELECTION AND TRAPPING OF IONS IN A VACUUM SYSTEM - An abridged multipole structure for the transport and selection of ions along a central axis in a vacuum system is constructed from a plurality of rectilinear electrode structures, each having a substantially planar face with a first dimension and a second dimension perpendicular to the first dimension. When a voltage is applied across the second dimension, an electrical potential is produced at the planar face whose amplitude is a linear function of position along the second dimension. Two electrode structures can be arranged parallel to each other with the first dimension extending along the central axis or more electrodes structures can be arranged to form multipole structures with various polygonal cross sections. Additional embodiments can act as linear ion traps or Paul ion traps. | 12-06-2012 |
| 20130009050 | ABRIDGED MULTIPOLE STRUCTURE FOR THE TRANSPORT, SELECTION, TRAPPING AND ANALYSIS OF IONS IN A VACUUM SYSTEM - An abridged multipole structure for the transport and selection of ions along a central axis in a vacuum system is constructed from a plurality of rectilinear electrode structures, each having a substantially planar face with a first dimension and a second dimension perpendicular to the first dimension. When a voltage is applied across the second dimension, an electrical potential is produced at the planar face whose amplitude is a linear function of position along the second dimension. Two electrode structures can be arranged parallel to each other with the first dimension extending along the central axis or more electrodes structures can be arranged to form multipole structures with various polygonal cross sections. Additional embodiments can be used to excite ions into secular motion, inductively detect the ions, and thereby generate a mass spectrum. | 01-10-2013 |
| 20130009051 | ABRIDGED ION TRAP - TIME OF FLIGHT MASS SPECTROMETER - An improved trap-TOF mass spectrometer has a set of electrodes arranged to produce both a quadrupolar RF confining field and a substantially homogeneous dipole field. In operation, ions are first confined by the RF field and then, at a selected time, the RF confining field is discontinued and the dipole field is used to accelerate the ions so as to initiate a TOF MS analysis. The apparatus of the present invention may be used alone or in conjunction with other analyzers to produce mass spectra from analyte ions. | 01-10-2013 |
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| 20090304710 | NOVEL ANTI-CD38 ANTIBODIES FOR THE TREATMENT OF CANCER - Antibodies, humanized antibodies, resurfaced antibodies, antibody fragments, derivatized antibodies, and conjugates of same with cytotoxic agents, which specifically bind to CD38, are capable of killing CD38 | 12-10-2009 |
| 20110195021 | CD20 ANTIBODIES AND USES THEREOF - CD20 is a transmembrane protein of the tetra-spanin family expressed on the surface of B-cells and has been found on B-cells from peripheral blood as well as lymphoid tissues. CD20 expression persists from the early pre-B cell stage until the plasma cell differentiation stage. Conversely, it is not found on hematopoietic stem cells, pro-B cells, differentiated plasma cells or non-lymphoid tissues. In addition to expression in normal B-cells, CD20 is expressed in B-cell derived malignancies such as non-Hodgkin's lymphoma (NHL) and B-cell chronic lymphocytic leukemia (CLL). CD20 expressing cells are known to play a role in other diseases and disorders, including inflammation. The present invention includes anti-CD20 antibodies, forms and fragments, having superior physical and functional properties; immunoconjugates, compositions, diagnostic reagents, methods for inhibiting growth, therapeutic methods, improved antibodies and cell lines; and polynucleotides, vectors and genetic constructs encoding same. | 08-11-2011 |
| 20110195022 | CD20 ANTIBODIES AND USES THEREOF - CD20 is a transmembrane protein of the tetra-spanin family expressed on the surface of B-cells and has been found on B-cells from peripheral blood as well as lymphoid tissues. CD20 expression persists from the early pre-B cell stage until the plasma cell differentiation stage. Conversely, it is not found on hematopoietic stem cells, pro-B cells, differentiated plasma cells or non-lymphoid tissues. In addition to expression in normal B-cells, CD20 is expressed in B-cell derived malignancies such as non-Hodgkin's lymphoma (NHL) and B-cell chronic lymphocytic leukemia (CLL). CD20 expressing cells are known to play a role in other diseases and disorders, including inflammation. The present invention includes anti-CD20 antibodies, forms and fragments, having superior physical and functional properties; immunoconjugates, compositions, diagnostic reagents, methods for inhibiting growth, therapeutic methods, improved antibodies and cell lines; and polynucleotides, vectors and genetic constructs encoding same. | 08-11-2011 |
| 20110262454 | NOVEL ANTI-CD38 ANTIBODIES FOR THE TREATMENT OF CANCER - Antibodies, humanized antibodies, resurfaced antibodies, antibody fragments, derivatized antibodies, and conjugates of same with cytotoxic agents, which specifically bind to CD38, are capable of killing CD38 | 10-27-2011 |
| 20120156217 | Novel EGFR-Binding Molecules and Immunoconjugates Thereof - Novel anti-cancer agents, including, but not limited to, antibodies and immunoconjugates, that bind to EGFR are provided. Methods of using the agents, antibodies, or immunoconjugates, such as methods of inhibiting tumor growth are further provided. | 06-21-2012 |
| 20120156218 | NOVEL ANTI-CD38 ANTIBODIES FOR THE TREATMENT OF CANCER - Antibodies, humanized antibodies, resurfaced antibodies, antibody fragments, derivatized antibodies, and conjugates of same with cytotoxic agents, which specifically bind to CD38, are capable of killing CD38 | 06-21-2012 |
| 20120276119 | CD37-Binding Molecules and Immunoconjugates Thereof - Methods of using CD37 agents, including, but not limited to, antibodies and immunoconjugates, that bind to CD37 to deplete B-cells (e.g., non-cancerous B-cells) and methods of treating autoimmune and inflammatory diseases are further provided. | 11-01-2012 |
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| 20080230514 | METHOD OF PRODUCING NANOPATTERNED TEMPLATES - Nanopatterned substrates can be prepared by a method that includes forming a block copolymer film on a substrate, annealing the block copolymer film, surface reconstructing the annealed block copolymer film, coating an etch-resistant layer on the surface reconstructed block copolymer film, etching the resist-coated block copolymer film to create an etched article comprising a nanopatterned substrate, and separating the etch-resistant layer and the block copolymer film from the nanopatterned substrate. The method is applicable to a wide variety of substrate materials, avoids any requirement for complicated procedures to produce long-range order in the block copolymer film, and avoids any requirement for metal functionalization of the block copolymer. | 09-25-2008 |
| 20100075116 | SELF-ASSEMBLY OF BLOCK COPOLYMERS ON TOPOGRAPHICALLY PATTERNED POLYMERIC SUBSTRATES - Highly-ordered block copolymer films are prepared by a method that includes forming a polymeric replica of a topographically patterned crystalline surface, forming a block copolymer film on the topographically patterned surface of the polymeric replica, and annealing the block copolymer film. The resulting structures can be used in a variety of different applications, including the fabrication of high density data storage media. The ability to use flexible polymers to form the polymeric replica facilitates industrial-scale processes utilizing the highly-ordered block copolymer films. | 03-25-2010 |
| 20100086801 | METHOD OF PRODUCING NANOPATTERNED ARTICLES, AND ARTICLES PRODUCED THEREBY - Nanopatterned surfaces are prepared by a method that includes forming a block copolymer film on a substrate, annealing and surface reconstructing the block copolymer film to create an array of cylindrical voids, depositing a metal on the surface-reconstructed block copolymer film, and heating the metal-coated block copolymer film to redistribute at least some of the metal into the cylindrical voids. When very thin metal layers and low heating temperatures are used, metal nanodots can be formed. When thicker metal layers and higher heating temperatures are used, the resulting metal structure includes nanoring-shaped voids. The nanopatterned surfaces can be transferred to the underlying substrates via etching, or used to prepare nanodot- or nanoring-decorated substrate surfaces. | 04-08-2010 |
| 20100112308 | METHOD OF PRODUCING NANOPATTERNED ARTICLES, AND ARTICLES PRODUCED THEREBY - A nanopatterned surface is prepared by forming a block copolymer film on a miscut crystalline substrate, annealing the block copolymer film, then reconstructing the surface of the annealed block copolymer film. The method creates a well-ordered array of voids in the block copolymer film that is maintained over a large area. The nanopatterned block copolymer films can be used in a variety of different applications, including the fabrication of high density data storage media. | 05-06-2010 |
| 20120211871 | METHOD OF PRODUCING NANOPATTERNED ARTICLES, AND ARTICLES PRODUCED THEREBY - A nanopatterned surface is prepared by forming a block copolymer film on a miscut crystalline substrate, annealing the block copolymer film, then reconstructing the surface of the annealed block copolymer film The method creates a well-ordered array of voids in the block copolymer film that is maintained over a large area. The nanopatterned block copolymer films can be used in a variety of different applications, including the fabrication of high density data storage media. | 08-23-2012 |
