| Patent application number | Description | Published |
|---|
| 20080290515 | PROPERTIES OF METALLIC COPPER DIFFUSION BARRIERS THROUGH SILICON SURFACE TREATMENTS - In accordance with the invention, there are diffusion barriers, integrated circuits, and semiconductor devices and methods of fabricating them. The method of fabricating a diffusion barrier can include providing a dielectric layer, forming a first silicon enriched layer over the dielectric layer by exposing the dielectric layer to a silicon-containing ambient, and forming a barrier layer over the first silicon enriched layer. | 11-27-2008 |
| 20090001510 | AIR GAP IN INTEGRATED CIRCUIT INDUCTOR FABRICATION - In accordance with the invention, there are inductors with an air gap, semiconductor devices, integrated circuits, and methods of fabricating them. The method of making an inductor with an air gap can include fabricating a first level of inductor in an intra-metal dielectric layer including one or more inductor loops, one or more vias, and one or more copper bulkhead structures, forming an inter-level dielectric layer over the first level and repeating the steps to form two or more levels of inductor. The method can also include forming an extraction via, forming an air gap between the inductor loops by removing portions of the intra-metal dielectric layer coupled to the extraction via using super critical fluid process, and forming a non-conformal layer to seal the extraction via. | 01-01-2009 |
| 20090085197 | Method of Fabrication of On-Chip Heat Pipes and Ancillary Heat Transfer Components - The density of components in integrated circuits (ICs) is increasing with time. The density of heat generated by the components is similarly increasing. Maintaining the temperature of the components at reliable operating levels requires increased thermal transfer rates from the components to the IC package exterior. Dielectric materials used in interconnect regions have lower thermal conductivity than silicon dioxide. This invention comprises a heat pipe located in the interconnect region of an IC to transfer heat generated by components in the IC substrate to metal plugs located on the top surface of the IC, where the heat is easily conducted to the exterior of the IC package. Refinements such as a wicking liner or reticulated inner surface will increase the thermal transfer efficiency of the heat pipe. Strengthening elements in the interior of the heat pipe will provide robustness to mechanical stress during IC manufacture. | 04-02-2009 |
| 20090261453 | AIR GAP IN INTEGRATED CIRCUIT INDUCTOR FABRICATION - A semiconductor device, such as an inductor, is formed with an air gap. A first level has an intra-metal dielectric layer including one or more inductor loops, one or more vias, and one or more copper bulkhead structures. An inter-level dielectric layer is formed over the first level. An extraction via is formed through the intra-metal dielectric layer and inter-level dielectric layer. An air gap is formed between inductor loops by removing portions of the intra-metal dielectric layer coupled to the extraction via using a supercritical fluid process, and forming a non-conformal layer to seal the extraction via. The air gap may be filled with an inert gas, like argon or nitrogen. | 10-22-2009 |
