Pamarthy
Kalyan Pamarthy, San Francisco, CA US
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20150271033 | SCALABLE FRAMEWORK FOR MONITORING MACHINE-TO-MACHINE (M2M) DEVICES - A device receives information associated with machine-to-machine (M2M) devices connected to a host server device via a network. The information associated with the M2M devices include one or more of device information associated with components of the M2M devices, application information generated by the M2M devices, or network information associated with interactions of the M2M devices, with the network, when the M2M devices provide the application information to the host server device via the network. The device performs an analysis of the information associated with the M2M devices via one or more analytics techniques, and generates analysis information based on the analysis of the information associated with the M2M devices. The device provides the analysis information for display by the host server device. | 09-24-2015 |
Sharma Pamarthy, Hayward, CA US
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20100055400 | Post etch reactive plasma milling to smooth through substrate via sidewalls and other deeply etched features - A method of smoothing the sidewalls of an etched feature using reactive plasma milling. The method of smoothing reduces the depth of sidewall notching, which causes the roughness on the feature wall surface. The method comprises removing residual polymeric materials from the interior and exterior surfaces of said silicon-comprising feature and treating the interior surface of the silicon-comprising feature with a reactive plasma generated from a source gas while the silicon-comprising feature is biased with a pulsed RF power. The source gas includes a reagent which reacts with the silicon and an inert gas. The method provides a depth of a notch on the interior surface of about 500 nm or less. | 03-04-2010 |
Sharma V. Pamarthy, Fremont, CA US
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20110073564 | METHOD AND APPARATUS FOR HIGH EFFICIENCY GAS DISSOCIATION IN INDUCTIVE COUPLE PLASMA REACTOR - Embodiments of the present invention relate to method and apparatus for providing processing gases to a process chamber with improved plasma dissociation efficiency. One embodiment of the present invention provides a baffle nozzle assembly comprising an outer body defining an extension volume connected to a processing chamber. A processing gas is flown to the processing chamber through the extension volume which is exposed to power source for plasma generation. | 03-31-2011 |
20110201205 | METHOD OF FORMING A DEEP TRENCH IN A SUBSTRATE - Methods of forming deep trenches in substrates are described. A method includes providing a substrate with a patterned film disposed thereon, the patterned film including a trench having a first width and a pair of sidewalls, the trench exposing the top surface of the substrate. The method also includes forming a material layer over the patterned film and conformal with the trench. The method also includes etching the material layer to form sidewall spacers along the pair of sidewalls of the trench, the sidewall spacers reducing the first width of the trench to a second width. The method also includes etching the substrate to form a deep trench in the substrate, the deep trench undercutting at least a portion of the sidewall spacers. | 08-18-2011 |
20110217832 | METHOD OF FILLING A DEEP TRENCH IN A SUBSTRATE - Methods of filling deep trenches in substrates are described. A method includes providing a substrate with a deep trench formed therein. The method also includes forming a dielectric layer conformal with the substrate and the deep trench. The method also includes, with the entire portion of the dielectric layer conformal with the deep trench exposed, removing at least a portion, but not all, of the dielectric layer at the top of the deep trench with a relatively low bias plasma etch process. | 09-08-2011 |
20140256148 | METHOD AND APPARATUS FOR HIGH EFFICIENCY GAS DISSOCIATION IN INDUCTIVE COUPLED PLASMA REACTOR - Embodiments of the present disclosure relate to method and apparatus for providing processing gases to a process chamber with improved plasma dissociation efficiency. One embodiment of the present disclosure provides a baffle nozzle assembly comprising an outer body defining an extension volume connected to a processing chamber. A processing gas is flown to the processing chamber through the extension volume which is exposed to power source for plasma generation. | 09-11-2014 |
Sharma V. Pamarthy, Hayward, CA US
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20090272717 | METHOD AND APPARATUS OF A SUBSTRATE ETCHING SYSTEM AND PROCESS - Embodiments of the invention relate to a substrate etching system and process. In one embodiment, a method may include depositing material on the substrate during a deposition process, etching a first layer of the substrate during a first etch process, and etching a second layer of the substrate during a second etch process, wherein a first bias power is applied to the substrate during the first process, and wherein a second bias power is applied to the substrate during the second etch process. In another embodiment, a system may include a gas delivery system containing a first gas panel for supplying a first gas to a chamber, a second gas panel for supplying a second gas to the chamber, and a plurality of flow controllers for directing the gases to the chamber to facilitate rapid gas transitioning between the gases to and from the chamber and the panels. | 11-05-2009 |
Sree Gouri Pamarthy, San Jose, CA US
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20140058889 | CATALOG ITEM FULFILLMENT SYSTEM - A system and method for a catalog item virtual fulfillment center is described. The system determines whether an item from a search query on an online marketplace corresponds to a catalog item. The catalog item corresponds to an item sold at substantially the same price among different sellers of the online marketplace. A display of a menu of different shipping times and corresponding total costs is generated for the catalog item. | 02-27-2014 |