Patent application number | Description | Published |
20120145953 | LITHIUM PRECURSORS FOR LixMyOz MATERIALS FOR BATTERIES - Disclosed are lithium-containing compounds and methods of utilizing the same. The disclosed compounds may be used to deposit alkali metal-containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition. In certain embodiments, the lithium-containing compounds include a ligand and at least one aliphatic group as substituents selected to have greater degrees of freedom than the usual substituent. | 06-14-2012 |
20120156373 | PREPARATION OF CERIUM-CONTAINING PRECURSORS AND DEPOSITION OF CERIUM-CONTAINING FILMS - Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand. | 06-21-2012 |
20120207927 | HAFNIUM- AND ZIRCONIUM-CONTAINING PRECURSORS AND METHODS OF USING THE SAME - Disclosed are hafnium- and zirconium-containing precursors and methods of providing the same. The disclosed precursors include a ligand and at least one aliphatic group as substituent selected to have greater degrees of freedom than the usual substituents. The disclosed precursors may be used to deposit hafnium- or zirconium-containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition. | 08-16-2012 |
20120207928 | METHODS OF MAKING AND DEPOSITION METHODS USING HAFNIUM- OR ZIRCONIUM-CONTAINING COMPOUNDS - Disclosed are hafnium- or zirconium-containing compounds. The compounds may be used to deposit hafnium- or zirconium-containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition. The hafnium- or zirconium-containing compounds include a ligand at least one aliphatic group as substituents selected to have greater degrees of freedom than the substituents disclosed in the prior art. | 08-16-2012 |
20120329999 | PREPARATION OF LANTHANIDE-CONTAINING PRECURSORS AND DEPOSITION OF LANTHANIDE-CONTAINING FILMS - Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand. | 12-27-2012 |
20130022745 | SILANE BLEND FOR THIN FILM VAPOR DEPOSITION - Disclosed are non-pyrophoric mixtures of silicon compounds and solvents. Also disclosed are methods of stabilizing the pyrophoric silicon compounds (precursors). The non-pyrophoric mixtures may be used to deposit silicon-containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition. | 01-24-2013 |
20130303739 | PREPARATION OF LANTHANIDE-CONTAINING PRECURSORS AND DEPOSITION OF LANTHANIDE-CONTAINING FILMS - Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand. | 11-14-2013 |
20140113456 | PREPARATION OF CERIUM-CONTAINING PRECURSORS AND DEPOSITION OF CERIUM-CONTAINING FILMS - Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand. | 04-24-2014 |
20140127913 | TITANIUM-CONTAINING PRECURSORS FOR VAPOR DEPOSITION - Disclosed are titanium-containing precursors and methods of synthesizing the same. The compounds may be used to deposit titanium, titanium oxide, strontium-titanium oxide, and barium strontium titanate containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition. | 05-08-2014 |
20140170861 | HAFNIUM-CONTAINING AND ZIRCONIUM-CONTAINING PRECURSORS FOR VAPOR DEPOSITION - Disclosed are hafnium-containing and zirconium-containing precursors and methods of synthesizing the same. The compounds may be used to deposit hafnium, zirconium, hafnium oxide, and zirconium oxide containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition. | 06-19-2014 |
20140335702 | PREPARATION OF CERIUM-CONTAINING PRECURSOR AND DEPOSITION OF CERIUM-CONTAINING FILMS - Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand. | 11-13-2014 |
20150270140 | ATOMIC LAYER OR CYCLIC PLASMA ETCHING CHEMISTRIES AND PROCESSES - Atomic layer or cyclic plasma etching chemistries and processes to etch films are disclosed. Films include Si, Ti, Ta, W, Al, Pd, Ir, Co, Fe, B, Cu, Ni, Pt, Ru, Mn, Mg, Cr, Au, alloys thereof, oxides thereof, nitrides thereof, and combinations thereof. | 09-24-2015 |