Patent application number | Description | Published |
20080263842 | THIN FILM CAPACITORS AND METHODS OF MAKING THE SAME - An apparatus including a first electrode; a second electrode; a first and second ceramic material disposed between the first electrode and the second electrode, the second ceramic material having a greater electrical conductivity than the first ceramic material. A method including forming a first ceramic material film and a different second ceramic material film on a first electrode; and forming a second electrode on the second ceramic material film to form a capacitor structure having the first ceramic material film and the second ceramic material film disposed between the first electrode and the second electrode, wherein the first ceramic material has a conductivity selected to dampen undesired oscillations in electrical device operation to which the capacitor structure may be exposed. An apparatus including a first electrode; a second electrode; and a composite dielectric including a plurality of dielectric films including a different Curie temperature. | 10-30-2008 |
20090284944 | SPLIT THIN FILM CAPACITOR FOR MULTIPLE VOLTAGES - An apparatus, and a method for forming, a split thin film capacitor for providing multiple power and reference supply voltage levels to electrical devices such as integrated circuits, may be useful in space restricted applications, and in applications that require very close electrical connections between the power consumer and the power supply. An example of both a space restricted application and a close coupling application may be an integrated circuit (IC) such as a microprocessor. The capacitor supplying and moderating power to the microprocessor needs to be closely coupled in order to respond to instantaneous power demands that may be found in high clock rate microprocessors, and the space inside a microprocessor package is very restricted. The microprocessor may use a lower voltage power supply level for minimum sized fast transistors in the fast core logic portions of the microprocessor, and a more normal voltage power supply voltage level for the cache memory and I/O transistor portions of the microprocessor. Thus a compact capacitor with multiple power and reference supply levels may be needed to provide the required power for a high frequency IC. | 11-19-2009 |
20090316374 | Reduced Porosity High-K Thin Film Mixed Grains for Thin Film Capacitor Applications - A method including forming a layer of a first ceramic material on a substrate; and after forming the layer, forming a second ceramic material on the layer of the first ceramic material, the formed second ceramic material including an average grain size less than a grain size of the first ceramic material. An apparatus including a first electrode; a second electrode; and a sintered ceramic material, wherein the ceramic material comprises first ceramic grains defining grain boundaries therebetween and second ceramic grains having an average grain size smaller than a grain size of the first ceramic grains. A system including a device including a microprocessor, the microprocessor coupled to a circuit board through a substrate, the substrate including a capacitor structure formed on a surface, the capacitor structure including a first electrode, a second electrode, and a sintered ceramic material disposed between the first electrode and the second electrode. | 12-24-2009 |
20140111924 | SOL-GEL AND MASK PATTERNING FOR THIN-FILM CAPACITOR FABRICATION, THIN-FILM CAPACITORS FABRICATED THEREBY, AND SYSTEMS CONTAINING SAME - A process of forming a thin-film capacitor that includes sol-gel patterning of a dielectric thin film on a first electrode, lift-off removal of unwanted dielectric thin film, and mating the dielectric thin film with a second electrode. The thin-film capacitor exhibits a substantially uniform heat-altered morphology along a line defined by a characteristic dimension thereof. A computing system is also disclosed that includes the thin-film capacitor. | 04-24-2014 |
Patent application number | Description | Published |
20080316723 | METHODS FOR INTEGRATION OF THIN-FILM CAPACITORS INTO THE BUILD-UP LAYERS OF A PRINTED WIRING BOARD - Provided herein are devices comprising a printed wiring board that comprise, singulated capacitors fabricated from known good, thin-film, fired-on-foil capacitors. Provided are methods of incorporating the singulated capacitors into the build-up layers of a printed wiring board to minimize impedance. The singulated capacitors have a pitch that allows each power and ground terminal of an IC to be directly connected to a power and ground electrode, respectively, of its own singulated capacitor. Using a feedstock of known good, fired-on-foil capacitors allows for improved PWB yield. | 12-25-2008 |
20090035913 | HIGH-CAPACITANCE DENSITY THIN FILM DIELECTRICS HAVING COLUMNAR GRAINS FORMED ON BASE-METAL FOILS - Deposited thin-film dielectrics having columnar grains and high dielectric constants are formed on heat treated and polished metal foil. The sputtered dielectrics are annealed at low oxygen partial pressures. | 02-05-2009 |
20090238954 | LARGE AREA THIN FILM CAPACITORS ON METAL FOILS AND METHODS OF MANUFACTURING SAME - Disclosed are a method of making a dielectric on a metal foil, and a method of making a large area capacitor that includes a dielectric on a metal foil. A dielectric precursor layer and the base metal foil are prefired at a prefiring temperature in the range of 350 to 650° C. in a moist atmosphere that also comprises a reducing gas. The prefired dielectric precursor layer and base metal foil are subsequently fired at a firing temperature in the range of 700 to 1200° C. in an atmosphere having an oxygen partial pressure of less than about 10 | 09-24-2009 |
20090238955 | PROCESSES FOR THE MANUFACTURE OF BARIUM TITANATE CAPACITORS ON NICKEL FOILS - Provided are processes for the manufacture of capacitors. It is found that by using a nickel foil as the substrate and one electrode of the capacitor and by controlling the oxygen partial pressure in the range of 10 | 09-24-2009 |
20110311718 | METHOD OF MANUFACTURING THIN-FILM DIELECTRICS AND CAPACITORS ON METAL FOILS - Disclosed is a method of making a thin-film dielectric, comprising providing a base metal foil, forming a barium titanate-based dielectric precursor layer over a base metal foil, pre-annealing the dielectric precursor layer and base metal foil, rapidly heating the pre-annealed dielectric precursor layer from a temperature of less than 530° C. to an annealing temperature of more than 800° C. in less than 15 seconds; and annealing the dielectric to form a crystalline barium titanate-based dielectric on the base metal foil, wherein the crystalline barium titanate-based dielectric has grains with an average grain size that is greater or equal to 50 nanometers. Also disclosed is a method of making a capacitor comprised of the thin-film dielectric formed on a base metal foil according to the method described above with a second conductive layer formed over the dielectric. | 12-22-2011 |
20140083495 | CONDUCTIVE SILVER PASTE FOR A METAL-WRAP-THROUGH SILICON SOLAR CELL - A conductive silver via paste comprising particulate conductive silver, a vanadium-phosphorus-oxide and an organic vehicle is particularly useful in providing the metallization of the holes in the silicon wafers of MWT solar cells. The result is a metallic electrically conductive via between the collector lines on the front side and the emitter electrode on the back-side of the solar cell. The paste can also be used to form the collector lines on the front-side of the solar cell and the emitter electrode on the back-side of the solar cell. Also disclosed are metal-wrap-through silicon solar cells comprising the fired conductive silver paste. | 03-27-2014 |