Pabisz
Marek Pabisz, Quakertown, PA US
Patent application number | Description | Published |
---|---|---|
20120043551 | Second contact schottky metal layer to improve GaN schottky diode performance - A Schottky diode includes a first nitride-based semiconductor layer disposed atop a substrate. A second nitride-based semiconductor layer is disposed atop a portion of the first nitride-based semiconductor layer. The second layer has a doping concentration lower than that of the first layer. A first Schottky contact metal layer having a first metal work function is disposed on a top planar surface of the second layer, forming a first Schottky junction. A second Schottky contact metal layer having a second metal work function is disposed atop of and laterally surrounding the first Schottky contact metal layer, the metal work function of the second metal layer is higher than that of the first metal layer. A metal layer disposed on first and second planar surfaces forms an ohmic contact with the first nitride-based semiconductor layer. | 02-23-2012 |
20140110721 | Second Schottky Contact Metal Layer to Improve GaN Schottky Diode Performance - A Schottky contact is disposed atop the surface of the semiconductor. A first Schottky contact metal layer is disposed atop a first portion of the semiconductor surface. A second Schottky contact metal is disposed atop a second portion of the surface layer and joins the first Schottky contact metal layer. A first. Schottky contact metal layer has a lower work function than the second Schottky contact metal layer. | 04-24-2014 |
Marek K. Pabisz, Quarkertown, PA US
Patent application number | Description | Published |
---|---|---|
20110101371 | Gallium nitride semiconductor - A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n− doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts. | 05-05-2011 |
Marek K. Pabisz, Langhorne, PA US
Patent application number | Description | Published |
---|---|---|
20100140627 | Package for Semiconductor Devices - A packaged semiconductor device including a semiconductor die mounted on a header of a leadframe. A plurality of spaced external conductors extends from the header and at least one of the external conductors has a bond wire post at one end thereof such that a bonding wire extends between the bond wire post and the semiconductor die. The package device also includes a housing, which encloses the semiconductor die, the header, the bonding wire and the bonding wire post resulting in an insulated packaged device. | 06-10-2010 |
Marek K. Pabisz, Quakertown, PA US
Patent application number | Description | Published |
---|---|---|
20090035925 | Gallium Nitride Semiconductor Device - A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n− doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts. | 02-05-2009 |
Michael Joseph Pabisz, Everett, WA US
Patent application number | Description | Published |
---|---|---|
20090048689 | ACTUATION RESPONSE OSCILLATION DETECTION MONITOR - A method, apparatus, and computer usable program code for monitoring an actuator for a control surface on an aircraft. In one advantageous embodiment, an error signal generated is received in response to sending a command to the actuator to move the control surface on the aircraft. Responsive to receiving the error signal, an amplitude and a frequency are identified for the error signal. A determination is made as to whether the amplitude exceeds a set of amplitude limits for the frequency, wherein each amplitude in the set of amplitude limits is associated with a requirement in a set of requirements. An exceedance count is incremented for each requirement in the set of requirements in which an associated amplitude limit has been exceeded by the amplitude to form an updated set of exceedance counts. A fault indication is generated if any exceedance count in the updated set of exceedance counts is greater than a threshold. | 02-19-2009 |
Ronald Pabisz, Boynton Beach, FL US
Patent application number | Description | Published |
---|---|---|
20080202138 | LOW PROFILE MARINE AIR CONDITIONER - A low profile, self-contained air conditioning unit for a nautical vehicle comprises a base pan, an air handler, a substantially horizontal compressor and a second heat exchanger. The air handler comprises a first heat exchanger with a medium conduit for channeling a refrigerating medium, an air moving apparatus within a shroud. The shroud includes a front wall having an air outlet and a rear wall having an air inlet and the first heat exchanger is located adjacent to the air inlet of the first wall. The second heat exchanger has an inner tube and an outer tube. The inner tube circulates water and the outer tube is in fluid communication with the medium conduit, coaxially encloses a substantial portion of the inner tube, and has an inlet and an outlet. The compressor and the second heat exchanger are adjacent to the air handler and the second heat exchanger is above the compressor. | 08-28-2008 |