Patent application number | Description | Published |
20100013085 | POWER SEMICONDUCTOR DEVICE - A power semiconductor device includes power semiconductor elements joined to wiring patterns of a circuit substrate, cylindrical external terminal communication sections, and wiring means for forming electrical connection between, for example, the power semiconductor elements and the cylindrical external terminal communication sections. The power semiconductor elements, the cylindrical external terminal communication sections, and the wiring means are sealed with transfer molding resin. The cylindrical external terminal communication sections are arranged on the wiring patterns so as to be substantially perpendicular to the wiring patterns, such that external terminals are insertable and connectable to the cylindrical external terminal communication sections, and such that a plurality of cylindrical external terminal communication sections among the cylindrical external terminal communication sections are arranged two-dimensionally on each of wiring patterns that act as main circuits. | 01-21-2010 |
20100013086 | POWER SEMICONDUCTOR DEVICE - A power semiconductor device with improved productivity, reduced size and reduction of amounting area therefore is provided. In the provided power semiconductor device, an external terminal does not limit an increase in current. The power semiconductor device is sealed with transfer molding resin. In the power semiconductor device, a cylindrical external terminal communication section is arranged on a wiring pattern so as to be substantially perpendicular to the wiring pattern. An external terminal can be inserted and connected to the cylindrical external terminal communication section. The cylindrical external terminal communication section allows the inserted external terminal to be electrically connected to the wiring pattern. A taper is formed at, at least, one end of the cylindrical external terminal communication section, which one end is joined to the wiring pattern. | 01-21-2010 |
20100117219 | POWER SEMICONDUCTOR DEVICE - A power semiconductor device in which transfer molding resin seals: a metallic circuit substrate; a power semiconductor element joined to a wiring pattern; and a side surface of a cylindrical external terminal communication section provided on the wiring pattern and to which an external terminal can be inserted and connected. The cylindrical external terminal communication section is substantially perpendicular to a surface on which the wiring pattern is formed. An outer surface of a metal plate of the metallic circuit substrate and a top portion of the cylindrical external terminal communication section are exposed from the transfer molding resin. The transfer molding resin is not present within the cylindrical external terminal communication section. | 05-13-2010 |
20110187003 | POWER SEMICONDUCTOR DEVICE - A power semiconductor device includes power semiconductor elements joined to wiring patterns of a circuit substrate, cylindrical external terminal communication sections, and wiring means for forming electrical connection between, for example, the power semiconductor elements and the cylindrical external terminal communication sections. The power semiconductor elements, the cylindrical external terminal communication sections, and the wiring means are sealed with transfer molding resin. The cylindrical external terminal communication sections are arranged on the wiring patterns so as to be substantially perpendicular to the wiring patterns, such that external terminals are insertable and connectable to the cylindrical external terminal communication sections, and such that a plurality of cylindrical external terminal communication sections among the cylindrical external terminal communication sections are arranged two-dimensionally on each of wiring patterns that act as main circuits. | 08-04-2011 |
20110260315 | POWER BLOCK AND POWER SEMICONDUCTOR MODULE USING SAME - A power block includes an insulating substrate, a conductive pattern formed on the insulating substrate, a power semiconductor chip bonded onto the conductive pattern by lead-free solder, a plurality of electrodes electrically connected to the power semiconductor chip and extending upwardly away from the insulating substrate, and a transfer molding resin covering the conductive pattern, the lead-free solder, the power semiconductor chip, and the plurality of electrodes, wherein surfaces of the plurality of electrodes are exposed at an outer surface of the transfer molding resin and lie in the same plane as the outer surface, the outer surface being located directly above the conductive pattern. | 10-27-2011 |
20120138946 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a cooler having a main surface constructed of a metal base, joined layers fixed on the metal base through joining layers, insulating layers fixed on the joined layers and which contain an organic resin as a base material, metal layers provided on the insulating layers, and semiconductor elements provided on the metal layers. A stacked structure with the joined layers, the insulating layers, and the metal layers is divided into parts containing one or the plurality of semiconductor elements, and is fixed through the joining layers on the metal base. | 06-07-2012 |
20130181228 | POWER SEMICONDUCTOR MODULE AND METHOD OF MANUFACTURING THE SAME - First chip main surfaces of first semiconductor chips are bonded to a heat spreader, and second chip main surfaces of the first semiconductor chips are bonded to a first electrode. First chip main surfaces of second semiconductor chips are bonded to a heat spreader, and second chip main surfaces of the second semiconductor chips are bonded to a first electrode. A plurality of electrodes are provided by a lead frame. An insulating member is provided on a side opposite to the chips when viewed from the heat spreader. An insulating substrate is provided on a side opposite to the chips when viewed from the first electrodes. | 07-18-2013 |
20140035658 | POWER SEMICONDUCTOR DEVICE MODULE - A power semiconductor device module includes a plurality of inverters, each having a first transistor and a second transistor that are interposed in series between a first potential and a second potential and that operate complementarily. The plurality of inverters are assembled into a module. Only one predetermined inverter of the plurality of inverters is configured to detect temperatures of the first and second transistors, and control terminals for detection of the temperatures of the first and second transistors protrude from sides of the module. | 02-06-2014 |
20150061111 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor element, a base plate having an upper surface on which the semiconductor element is mounted, a cooling fin disposed on a lower surface of the base plate, a jacket disposed in a sealing manner on the lower surface of the base plate, the jacket surrounding the cooling fin, and a header partition wall formed separately from the jacket and fixed to the jacket on the lower side of the cooling fin in the jacket, the header partition wall forming a header and a flow path for causing a refrigerant flow to the cooling fin. | 03-05-2015 |