Patent application number | Description | Published |
20100040961 | HALFTONE TYPE PHASE SHIFT MASK BLANK AND PHASE SHIFT MASK THEREOF - A halftone type phase shift mask blank including, on a transparent substrate, at least a phase shifter film having a predetermined transmittance for an exposed light and a predetermined phase difference for the transparent substrate, wherein the phase shifter film is formed by a multilayer film in which films including at least two layers having an upper layer formed on the most surface side and a lower layer formed thereunder are provided, and a thickness of the upper layer is adjusted in such a manner that a refractive index of the film to be the upper layer is smaller than that of the film to be the lower layer and a surface reflectance for the inspecting light of the phase shifter film is maximized and approximates to a maximum. | 02-18-2010 |
20100159368 | OPTICALLY SEMITRANSMISSIVE FILM, PHOTOMASK BLANK AND PHOTOMASK, AND METHOD FOR DESIGNING OPTICALLY SEMITRANSMISSIVE FILM - The present invention provides an optically semitransmissive film that has a near-zero phase shift, has a desired transmissivity, and is relatively thin; a novel phase-shift mask that uses the optically semitransmissive film; a photomask blank that can [be used to] manufacture the phase-shift mask; and a method for designing the optically semitransmissive film. The film is formed on a translucent substrate and transmits a portion of light having a desired wavelength λ, wherein the film has at least one phase-difference reduction layer that fulfills the following functions. Specifically, the phase-difference reduction layer is a layer that has a refractive index n and a thickness d that satisfy the expression 006-24-2010 | |
20110053057 | MASK BLANK, TRANSFER MASK, AND METHODS OF MANUFACTURING THE SAME - Provided is a mask blank for producing a transfer mask adapted to ArF excimer laser exposure light. The mask blank has a light-shielding film on a transparent substrate. The light-shielding film has a structure in which a light-shielding layer and a front-surface antireflection layer are laminated in this order from the transparent substrate side. The light-shielding layer is made of a material containing tantalum and nitrogen. The front-surface antireflection layer is made of a material containing tantalum and silicon and further containing one or more elements selected from oxygen and nitrogen. | 03-03-2011 |
20110171567 | PHASE SHIFT MASK BLANK, PHASE SHIFT MASK, AND METHOD FOR MANUFACTURING PHASE SHIFT MASK BLANK - Problem: There is a demand for a phase shift mask that makes it possible to decrease the film thickness of the phase shift film, can satisfy the requirement relating to pattern accuracy, without collapsing the OPC pattern, and enables control of optical characteristics and pattern defect inspection, and also for a phase shift mask blank as an original plate for such a phase shift mask. | 07-14-2011 |
20110207032 | OPTICALLY SEMITRANSMISSIVE FILM, PHOTOMASK BLANK AND PHOTOMASK, AND METHOD FOR DESIGNING OPTICALLY SEMITRANSMISSIVE FILM - The present invention provides an optically semitransmissive film that has a near-zero phase shift, has a desired transmissivity, and is relatively thin; a novel phase-shift mask that uses the optically semitransmissive film; a photomask blank that can [be used to] manufacture the phase-shift mask; and a method for designing the optically semitransmissive film. The film is formed on a translucent substrate and transmits a portion of light having a desired wavelength λ, wherein the film has at least one phase-difference reduction layer that fulfills the following functions. Specifically, the phase-difference reduction layer is a layer that has a refractive index n and a thickness d that satisfy the expression 008-25-2011 | |
20110244373 | MASK BLANK, TRANSFER MASK, AND METHODS OF MANUFACTURING THE SAME - In a mask blank for manufacturing a transfer mask adapted to exposure light having a wavelength of 200 nm or less, the mask blank has a light-shielding film on a transparent substrate. The light-shielding film is made of a material containing tantalum as a main metal component and includes a highly oxidized layer which has an oxygen content of 60 at % or more and which is formed as a surface layer of the light-shielding film, that is placed on a side opposite to a transparent substrate side. | 10-06-2011 |
20110244375 | MASK BLANK, TRANSFER MASK, METHODS OF MANUFACTURING THE SAME AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - In a mask blank for manufacturing a transfer mask, the mask blank has a light-shielding film on a transparent substrate. The light-shielding film is made of a material containing tantalum as a main metal component and includes a highly oxidized layer which has an oxygen content of 60 at % or more and which is formed as a surface layer of the light-shielding film. The highly oxidized layer is placed on a side opposite to a transparent substrate side. | 10-06-2011 |
20110250529 | PHOTOMASK BLANK, PHOTOMASK, AND METHODS OF MANUFACTURING THE SAME - A photomask blank is for manufacturing a phase shift mask having a light-transmitting substrate provided with a phase shift portion adapted to give a predetermined phase difference to transmitted exposure light. The phase shift portion is a dug-down part that is dug down from a surface of the light-transmitting substrate to a digging depth adapted to produce the predetermined phase difference with respect to exposure light transmitted through the light-transmitting substrate at a portion where the phase shift portion is not provided. The photomask blank includes, on the digging-side surface of the light-transmitting substrate, an etching mask film that is made of a material being dry-etchable with a chlorine-based gas, but not dry-etchable with a fluorine-based gas, and serves as an etching mask at least until, when forming the dug-down part by dry etching, the dry etching reaches the digging depth. The photomask blank further includes, on a surface of the etching mask film, a light-shielding film that is made of a material mainly containing tantalum and has a thickness so as to be removable during the dry etching for forming the dug-down part of the light-transmitting substrate. | 10-13-2011 |
20120034434 | MASK BLANK, TRANSFER MASK, AND FILM DENSITY EVALUATION METHOD - A relative density of a light-shielding film made of MoSi, which is given by relative density=(actual density/theoretical density)×100, is obtained using a density (actual density) calculated by an XRR method and a theoretical density obtained from a material composition. By obtaining a dense film having a relative density greater than 94%, the thickness of an alterated layer, caused by exposure light, at a surface of the MoSi film can be made not more than 2.0 nm so that the dimensional change of a transfer pattern can be made small. | 02-09-2012 |
20120082924 | MASK BLANK, TRANSFER MASK, METHOD OF MANUFACTURING A TRANSFER MASK, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A mask blank for use in the manufacture of a binary mask adapted to be applied with ArF excimer laser exposure light has, on a transparent substrate, a light-shielding film for forming a transfer pattern. The light-shielding film has a laminated structure of a lower layer and an upper layer and has an optical density of 2.8 or more for exposure light and a thickness of 45 nm or less. The lower layer is made of a material in which the total content of a transition metal and silicon is 90 at % or more, and has a thickness of 30 nm or more. The upper layer has a thickness of 3 nm or more and 6 nm or less. The phase difference between exposure light transmitted through the light-shielding film and exposure light transmitted in air for a distance equal to the thickness of the light-shielding film is 30 degrees or less. | 04-05-2012 |
20120115075 | MASK BLANK, TRANSFER MASK, METHOD OF MANUFACTURING A TRANSFER MASK, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A mask blank for use in the manufacture of a transfer mask adapted to be applied with ArF exposure light is disclosed. The mask blank has a light-shielding film on a transparent substrate. The light-shielding film has an at least two-layer structure comprising a lower layer composed mainly of a material containing a transition metal, silicon, and nitrogen and an upper layer composed mainly of a material containing a transition metal, silicon, and nitrogen. The ratio of the etching rate of the lower layer to that of the upper layer is 1.0 or more and 5.0 or less in etching which is carried out by supplying a fluorine-containing substance to a target portion and irradiating charged particles to the target portion. | 05-10-2012 |
20120177536 | AUTOMATIC ANALYZER - Ion concentration measurement requires a calibration before the start of the measurement, and thus the start of the measurement is delayed for the calibration period. Hence, the calibration is made unnecessary by reading an electrode slope value specific to an ion selective electrode for measuring the concentration of particular ions dissolved in a test solution, from an information presenting unit of an ion selective electrode cartridge including the ion selective electrode. | 07-12-2012 |
20120189946 | MASK BLANK AND TRANSFER MASK - Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blank | 07-26-2012 |
20120219889 | PHOTOMASK BLANK, PHOTOMASK, AND PHOTOMASK MANUFACTURING METHOD - A photomask blank has a light-shielding film composed of at least two layers on a transparent substrate. The light-shielding film includes a light-shielding layer made of a material mainly containing tantalum nitride and containing less than 62 at % nitrogen. The material is capable of being dry-etched with a chlorine-based gas containing no oxygen. The light-shielding film further includes a front-surface antireflection layer formed on the light-shielding layer and made of a material not capable of being dry-etched with a chlorine-based gas, but capable of being dry-etched with a fluorine-based gas. | 08-30-2012 |
20120251929 | PHASE SHIFT MASK BLANK, PHASE SHIFT MASK, AND METHOD FOR MANUFACTURING PHASE SHIFT MASK BLANK - A phase shift mask blank having, on a transparent substrate, a phase shift film including, as main components, a metal, silicon (Si) and nitrogen (N), having optical characteristics of a transmittance of equal to or greater than 9% and equal to or less than 30% with respect to a wavelength of the ArF excimer laser beam and a phase difference of equal to or greater than 150° and less than 180°, and a light-shielding film formed on the phase shift film. A thickness of the phase shift film is equal to or less than 80 nrn, a refractive index (n) with respect to the wavelength of the ArF excimer laser beam is equal to or greater than 2.3, and an extinction coefficient (k) is equal to or greater than 0.28. | 10-04-2012 |
20130011772 | OPTICALLY SEMITRANSMISSIVE FILM, PHOTOMASK BLANK AND PHOTOMASK, AND METHOD FOR DESIGNING OPTICALLY SEMITRANSMISSIVE FILM - A photomask blank includes a transparent substrate and a film containing at least two layers having at least a first layer and a second layer formed on the transparent substrate. The first layer is made of a material containing one or more materials selected from the group Ta, Hf, Si, Cr, Ag, Au, Cu, Al, and Mo. The second layer is made of MoSiN, MoSiO, MoSiON, SiN, SiO, or SiON. A phase difference of the film containing at least two layers is from −30° to +30°. | 01-10-2013 |
20130071777 | PHASE SHIFT MASK BLANK, METHOD OF MANUFACTURING THE SAME, AND PHASE SHIFT MASK - Provided are a phase shift mask blank that is improved in the irradiation durability of a light-semitransmissive film (phase shift film), made of a material containing mainly a transition metal, silicon, and nitrogen, to exposure light having a wavelength of 200 nm or less and thus can improve the mask lifetime, a method of manufacturing such a phase shift mask blank, and a phase shift mask. The phase shift mask blank is used for manufacturing a phase shift mask adapted to be applied with ArF excimer laser exposure light. The phase shift mask blank has a light-semitransmissive film on a transparent substrate. | 03-21-2013 |
20130280646 | MASK BLANK, TRANSFER MASK, METHOD OF MANUFACTURING A TRANSFER MASK, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A mask blank for use in the manufacture of a binary mask adapted to be applied with ArF excimer laser exposure light has, on a transparent substrate, a light-shielding film for forming a transfer pattern. The light-shielding film has a laminated structure of a lower layer and an upper layer and has an optical density of 2.8 or more for exposure light and a thickness of 45 nm or less. The lower layer is made of a material in which the total content of a transition metal and silicon is 90 at % or more, and has a thickness of 30 nm or more. The upper layer has a thickness of 3 nm or more and 6 nm or less. The phase difference between exposure light transmitted through the light-shielding film and exposure light transmitted in air for a distance equal to the thickness of the light-shielding film is 30 degrees or less. | 10-24-2013 |
20130309602 | OPTICALLY SEMITRANSMISSIVE FILM, PHOTOMASK BLANK AND PHOTOMASK, AND METHOD FOR DESIGNING OPTICALLY SEMITRANSMISSIVE FILM - A photomask blank includes a transparent substrate and a film containing at least two layers formed on the transparent substrate, the two layers being a first layer with a phase difference Δθ | 11-21-2013 |
20130316271 | METHOD OF MANUFACTURING A TRANSFER MASK AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - In a mask blank for manufacturing a transfer mask, the mask blank has a light-shielding film on a transparent substrate. The light-shielding film is made of a material containing tantalum as a main metal component and includes a highly oxidized layer which has an oxygen content of 60 at % or more and which is formed as a surface layer of the light-shielding film. The highly oxidized layer is placed on a side opposite to a transparent substrate side. | 11-28-2013 |
20140087292 | MASK BLANK, TRANSFER MASK AND METHOD OF MANUFACTURING TRANSFER MASK - Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blank | 03-27-2014 |
20140205937 | MASK BLANK, TRANSFER MASK, METHOD OF MANUFACTURING A TRANSFER MASK, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A mask blank is used for manufacturing a binary mask adapted to be applied with ArF excimer laser exposure light and has a light-shielding film for forming a transfer pattern on a transparent substrate. The light-shielding film has a laminated structure of a lower layer and an upper layer and has an optical density of 2.8 or more for the exposure light. The lower layer is made of a material containing tantalum and nitrogen and has a thickness of 33 nm or more. The upper layer is made of a material containing tantalum and oxygen and has a thickness of 3 nm or more. The phase difference between the exposure light transmitted through the light-shielding film and the exposure light transmitted in air for a distance equal to the thickness of the light-shielding film is 60 degrees or less. | 07-24-2014 |
Patent application number | Description | Published |
20080206655 | MASK BLANK, METHOD OF MANUFACTURING AN EXPOSURE MASK, AND METHOD OF MANUFACTURING AN IMPRINT TEMPLATE - A mask blank includes a substrate and a thin film formed thereon and used to form a pattern. The mask blank is adapted to be subjected to dry etching corresponding to a method of producing an exposure mask by patterning the thin film by dry etching using an etching gas substantially free from oxygen with a resist pattern formed on the thin film used as a mask. The thin film has a protective layer formed at least at its upper layer and containing 60 atomic % or more oxygen. For example, the dry etching is performed by the use of a chlorine-based gas substantially free from oxygen. | 08-28-2008 |
20090214961 | PHOTOMASK BLANK, PHOTOMASK, AND METHODS OF MANUFACTURING THE SAME - A photomask blank has a light-shielding film composed of at least two layers on a transparent substrate. The light-shielding film includes a light-shielding layer made of a material mainly containing tantalum nitride and further containing xenon and a front-surface antireflection layer formed on the light-shielding layer and made of a material mainly containing tantalum oxide and further containing argon. | 08-27-2009 |
20090246645 | PHOTOMASK BLANK, PHOTOMASK, AND METHODS OF MANUFACTURING THE SAME - A photomask blank is for manufacturing a phase shift mask having a light-transmitting substrate provided with a phase shift portion adapted to give a predetermined phase difference to transmitted exposure light. The phase shift portion is a dug-down part that is dug down from a surface of the light-transmitting substrate to a digging depth adapted to produce the predetermined phase difference with respect to exposure light transmitted through the light-transmitting substrate at a portion where the phase shift portion is not provided. The photomask blank includes, on the digging-side surface of the light-transmitting substrate, an etching mask film that is made of a material being dry-etchable with a chlorine-based gas, but not dry-etchable with a fluorine-based gas, and serves as an etching mask at least until, when forming the dug-down part by dry etching, the dry etching reaches the digging depth. The photomask blank further includes, on a surface of the etching mask film, a light-shielding film that is made of a material mainly containing tantalum and has a thickness so as to be removable during the dry etching for forming the dug-down part of the light-transmitting substrate. | 10-01-2009 |
20100081066 | MASK BLANK AND METHOD OF MANUFACTURING A TRANSFER MASK - A mask blank having, on a light-transmissive substrate, a light-shielding film made of a material mainly containing chromium, and adapted to use a resist film for electron beam writing when forming a transfer pattern in the light-shielding film. In the mask blank, an etching mask film made of a material containing a nitride or oxynitride of silicon is formed on an upper surface of the light-shielding film and a conductive mask film made of a conductive material dry-etchable with a fluorine-based gas and a mixed gas of chlorine and oxygen is formed on an upper surface of the etching mask film. | 04-01-2010 |
20100092874 | PHASE SHIFT MASK BLANK, PHASE SHIFT MASK, AND METHOD FOR MANUFACTURING PHASE SHIFT MASK BLANK - Problem: There is a demand for a phase shift mask that makes it possible to decrease the film thickness of the phase shift film, can satisfy the requirement relating to pattern accuracy, without collapsing the OPC pattern, and enables control of optical characteristics and pattern defect inspection, and also for a phase shift mask blank as an original plate for such a phase shift mask. | 04-15-2010 |
20100173233 | PHOTOMASK BLANK, PHOTOMASK, AND METHODS OF MANUFACTURING THE SAME - A photomask blank has a light-shielding film composed of at least two layers on a transparent substrate. The light-shielding film includes a light-shielding layer made of a material mainly containing tantalum nitride and further containing xenon and a front-surface antireflection layer formed on the light-shielding layer and made of a material mainly containing tantalum oxide and further containing argon. | 07-08-2010 |
20120100466 | MASK BLANK AND TRANSFER MASK - A mask blank and transfer mask that overcomes problems caused by an electromagnetic field (EMF) effect when the DRAM half pitch (hp) specified in semiconductor device design specifications is 32 nm or less. The mask blank is used in manufacturing a transfer mask to which ArF exposure light is applied, and includes a light shielding film | 04-26-2012 |
20120100470 | MASK BLANK, TRANSFER MASK, AND METHOD OF MANUFACTURING A TRANSFER MASK - Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blank | 04-26-2012 |
20130059236 | MASK BLANK, TRANSFER MASK AND PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICES - The present invention is the mask blank includes a glass substrate and a thin film formed on a main surface of the glass substrate, the thin film includes a material containing tantalum and substantially no hydrogen, and the mask blank has a invasion suppressive film between the main surface of the glass substrate and the thin film which suppresses hydrogen from being invaded from the glass substrate into the thin film. | 03-07-2013 |
20130065165 | MASK BLANK, TRANSFER MASK, METHOD OF MANUFACTURING A TRANSFER MASK, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A mask blank is used for manufacturing a binary mask adapted to be applied with ArF excimer laser exposure light and has a light-shielding film for forming a transfer pattern on a transparent substrate. The light-shielding film has a laminated structure of a lower layer and an upper layer and has an optical density of 2.8 or more for the exposure light. The lower layer is made of a material containing tantalum and nitrogen and has a thickness of 33 nm or more. The upper layer is made of a material containing tantalum and oxygen and has a thickness of 3 nm or more. The phase difference between the exposure light transmitted through the light-shielding film and the exposure light transmitted in air for a distance equal to the thickness of the light-shielding film is 60 degrees or less. | 03-14-2013 |
20130078553 | MASK BLANK, TRANSFER MASK, METHOD OF MANUFACTURING TRANSFER MASK AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The present invention is a mask blank used to fabricate a transfer mask, which has a laminated structure of a light shielding film and an etching mask film in this order on a transparent substrate, wherein the etching mask film comprises a material containing chromium, the light shielding film comprises a material containing tantalum, a highly oxidized layer is formed on the surface layer of the light shielding film on the opposite side from the transparent substrate, and a Ta 4 f narrow spectrum of the highly oxidized layer analyzed by X-ray photoelectron spectroscopy has a maximum peak at a binding energy of more than 23 eV. | 03-28-2013 |
20130078554 | REFLECTIVE MASK BLANK, REFLECTIVE MASK AND METHOD OF MANUFACTURING REFLECTIVE MASK - The present invention is a reflective mask blank used to fabricate a reflective mask, which has a laminated structure of a multilayer reflective film, an absorber film and an etching mask film in this order on a substrate, wherein the etching mask film comprises a material containing chromium, the absorber film comprises a material containing tantalum, a highly oxidized layer is formed on the surface layer of the absorber film on the opposite side from the substrate, and a Ta 4f narrow spectrum of the highly oxidized layer when analyzed by X-ray photoelectron spectroscopy has a maximum peak at a binding energy of more than 23 eV. | 03-28-2013 |
20130105441 | MASK BLANK AND METHOD OF MANUFACTURING AN IMPRINTING MOLD | 05-02-2013 |
20140322634 | MASK BLACK, TRANSFER MASK, METHOD OF MANUFACTURING A TRANSFER MASK, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A mask blank for manufacturing a transfer mask adapted to be applied with ArF excimer laser exposure light that has a transparent substrate and a light-shielding film formed into a transfer pattern. The light-shielding film has at least two-layers, one a lower layer composed mainly of a first material containing a transition metal, silicon, and nitrogen, and the other an upper layer composed mainly of a second material containing a transition metal, silicon, and nitrogen. A ratio of a first etching rate of the lower layer to a second etching rate of the upper layer is 1.0 or more and 5.0 or less in etching carried out by supplying a fluorine-containing substance onto a target portion and irradiating charged particles to the target portion. Another ratio satisfies the following formula CN≧−0.00526CMo2−0.640CMo+26.624. | 10-30-2014 |