Patent application number | Description | Published |
20080277583 | Charged particle beam apparatus - Electrification affected on a surface of a sample which is caused by irradiation of a primary charged particle beam is prevented when plural frames are integrated to obtain an image of a predetermined area of the sample in a charged particle beam apparatus. The predetermined area of the sample is scanned with a primary electron beam from an electron gun, and plural frames are generated and integrated while detecting generated secondary electrons with a detector to obtain the image of the predetermined area. If it is determined by a detection signal of the detector that an electrification amount at the predetermined area becomes a specified value when generating plural frames, an electricity removal voltage is applied to a boosting electrode to remove or reduce the electrification, prior to generation of the next frame. Accordingly, the signal-to-noise ratio of the image obtained by integrating plural frames can be improved. | 11-13-2008 |
20090140143 | CHARGED PARTICLE BEAM APPARATUS AND CONTROL METHOD THEREFOR - Potentials at a plurality of points on a diameter of a semiconductor wafer | 06-04-2009 |
20090214122 | Image processing apparatus for analysis of pattern matching failure - Information indicating the reason for a failure of template matching is provided. Difference information between a first image, which is referred to as a template, and a third image that is selected by the operator from a second image and that is larger than the template is displayed. | 08-27-2009 |
20090272899 | Method for Detecting Information of an Electric Potential on a Sample and Charged Particle Beam Apparatus - An object of the present invention is to provide a method and apparatus for measuring a potential on a surface of a sample using a charged particle beam while restraining a change in the potential on the sample induced by the charged particle beam application, or detecting a compensation value for a change in a condition for the apparatus caused by the sample being electrically charged. In order to achieve the above object, the present invention provides a method and apparatus for applying a voltage to a sample so that a charged particle beam does not reach the sample (hereinafter, this may be referred to as “mirror state”) in a state in which the charged particle beam is applied toward the sample, and detecting information relating to a potential on the sample using signals obtained by that voltage application. | 11-05-2009 |
20100038535 | Sample dimension measuring method and scanning electron microscope - The present invention suppresses decreases in the volumes of the patterns which have been formed on the surfaces of semiconductor samples or of the like, or performs accurate length measurements, irrespective of such decreases. In an electrically charged particle ray apparatus by which the line widths and other length data of the patterns formed on samples are to be measured by scanning the surface of each sample with electrically charged particle rays and detecting the secondary electrons released from the sample, the scanning line interval of said electrically charged particle rays is set so as not to exceed the irradiation density dictated by the physical characteristics of the sample. Or measured length data is calculated from prestored approximation functions. | 02-18-2010 |
20110057101 | CHARGED PARTICLE BEAM SYSTEM - A charged particle beam system wherein the output of the secondary electron detector is detected while the retarding voltage is varied between the values for which the secondary electrons do not reach the sample and the values for which the secondary electrons reach the sample, and the surface potential of the sample is determined on the basis of the relationship between the retarding voltage and the detected output of the secondary electron detector. | 03-10-2011 |
20110284759 | METHOD FOR ADJUSTING OPTICAL AXIS OF CHARGED PARTICLE RADIATION AND CHARGED PARTICLE RADIATION DEVICE - Provided are a method for adjusting the optical axis of a charged particle beam and a device therefor, wherein an artificial criterion is quantified, and whether or not the adjustment of the axis of a charged particle beam is necessary is judged on the basis of the quantified criterion. In the method for adjusting the optical axis and the device therefor, the conditions for adjusting an optical element for adjusting a charged particle beam are changed; a plurality of images are captured under the changed conditions; images the qualities of which are allowed or images the qualities of which are not allowed are selected from the captured images; a first image quality evaluation value is obtained on the basis of the selected images; the obtained first image quality evaluation value is compared with a second image quality evaluation value obtained from images obtained by scanning an object using the charged particle beam; and the optical axis is adjusted when the second image quality evaluation value is equal to or below the first image quality evaluation value. | 11-24-2011 |
20120119085 | SPECIMEN POTENTIAL MEASURING METHOD, AND CHARGED PARTICLE BEAM DEVICE - The present invention has an object to perform specimen charge measurement or focusing at a high speed and with high precision also for a specimen in which fixed charge and induced charge may be mixedly present. | 05-17-2012 |