Patent application number | Description | Published |
20090217969 | Method for Manufacturing Photoelectric Converter and Photoelectric Converter - Disclosed is a method for manufacturing a photoelectric converter wherein a lower electrode layer, a compound semiconductor thin film having a chalcopyrite structure which serves as a light absorptive layer and a light-transmitting electrode layer that are laminated to form layers are each patterned by photolithography, thereby minimizing damages to the crystals of the compound semiconductor thin film. | 09-03-2009 |
20090301558 | Photoelectric Converter and Method for Producing the Same - A photoelectric converter includes a lower electrode layer, a compound semiconductor thin film of a chalcopyrite structure functioning as a photoabsorption layer and a light transmitting electrode layer that are sequentially laminated on a substrate. An end portion of the of compound semiconductor thin film is positioned outward beyond an end of the light transmitting electrode layer. | 12-10-2009 |
20100243057 | SEMICONDUCTOR DEVICE, PHOTOELECTRIC CONVERTER AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERTER - The semiconductor device according to the present invention includes: a semiconductor substrate; an integrated circuit formed on the semiconductor substrate; and a photoelectric converter, stacked on the integrated circuit, having a light absorbing layer made of a compound semiconductor having a chalcopyrite structure. | 09-30-2010 |
20100276738 | SOLID-STATE IMAGING DEVICE AND FABRICATION METHOD THEREOF - Provision of a solid-state imaging device of a planarized structure with reduced dark currents, allowing for high sensitivities over a wide wavelength band ranging from visible wavelengths to near-infrared wavelengths, and a fabrication method of the same. | 11-04-2010 |
20110024859 | PHOTOELECTRIC CONVERSION DEVICE, FABRICATION METHOD FOR THE SAME, AND SOLID STATE IMAGING DEVICE - A photoelectric conversion device has a high S/N ratio and can increase the detection efficiency even under a low luminance. The photoelectric conversion device generates an increased electric charge by impact ionization in a photoelectric conversion unit formed from a chalcopyrite type semiconductor, so as to improve dark current characteristic. The photoelectric conversion device includes: a lower electrode layer; a compound semiconductor thin film of chalcopyrite structure disposed on the lower electrode layer and having a high resistivity layer on a surface; and a transparent electrode layer disposed on the compound semiconductor thin film, wherein the lower electrode layer, the compound semiconductor thin film, and the transparent electrode layer are laminated one after another, and a reverse bias voltage is applied between the transparent electrode layer and the lower electrode layer, and the multiplication by the impact ionization of the electric charge generated by photoelectric conversion is generated within the compound semiconductor thin film. It is also possible to provide a fabrication method for such photoelectric conversion device, and a solid state imaging device using the photoelectric conversion device. | 02-03-2011 |
20130122634 | SOLID-STATE IMAGING DEVICE AND FABRICATION METHOD THEREOF - A fabrication method for solid-state imaging devices includes having circuitry formed on a substrate, forming a lower electrode layer on the circuitry, patterning the lower electrode layer to separate pixel-wise into a set of segments, and forming a compound-semiconductor thin film of charcopyrite structure over a whole area of element regions. A resist layer is applied on the compound-semiconductor thin film to pixel-wise pattern in accordance with the lower electrode layer as a base separated into the set of segments, and an ion doping is applied over a whole area of element regions, forming element separating regions in the compound-semiconductor thin film. The method includes removing the resist layer for exposure of surfaces of a set of compound-semiconductor thin films separated pixel-wise by the element separating regions. A transparent electrode layer is formed in a planarizing manner over a whole area of element regions. | 05-16-2013 |
20130341694 | PHOTOELECTRIC CONVERTER - A photoelectric converter according to the present invention includes a substrate, a lower electrode layer arranged on the substrate, a compound semiconductor layer of a chalcopyrite structure arranged on the lower electrode layer to cover the lower electrode layer and partitioned into a plurality of pixels, a transparent electrode layer arranged on the compound semiconductor layer, and a shielding layer arranged around each of the pixels on the compound semiconductor layer. | 12-26-2013 |
20150214259 | PHOTOELECTRIC CONVERTER AND METHOD FOR MANUFACTURING THE SAME - A photoelectric converter according to the present invention includes an insulating layer, a plurality of lower electrodes that are mutually spaced and disposed on the insulating layer, a photoabsorption layer made of a chalcopyrite compound semiconductor and formed to cover the plurality of lower electrodes all together, and a transparent conductive film formed to cover the photoabsorption layer. Variation of sensitivity among pixels due to influence (damage) by etching of the photoabsorption layer is thereby eliminated and a pixel aperture ratio can be made 100%. | 07-30-2015 |