Patent application number | Description | Published |
20090120786 | Gallium Oxide-Zinc Oxide Sputtering Target, Method of Forming Transparent Conductive Film, and Transparent Conductive Film - Provided is a high density gallium oxide-zinc oxide series sintered body sputtering target for forming a transparent conductive film containing 20 to 500 mass ppm of aluminum oxide, In a gallium oxide (Ga | 05-14-2009 |
20090206303 | Gallium Oxide-Zinc Oxide Sputtering Target, Method for Forming Transparent Conductive Film, and Transparent Conductive Film - Provided is a high density gallium oxide-zinc oxide series sintered body sputtering target for forming a transparent conductive film containing 20 to 2000 mass ppm of zirconium oxide. In a gallium oxide (Ga | 08-20-2009 |
20090250669 | Gallium Oxide/Zinc Oxide Sputtering Target, Method of Forming Transparent Conductive Film and Transparent Conductive Film - Provided is a high-density gallium oxide/zinc oxide sintered sputtering target containing 20 massppm or greater of each zirconium oxide and aluminum oxide, wherein the total content thereof is less than 250 ppm. This gallium oxide (Ga | 10-08-2009 |
20100140570 | Sintered Compact of Composite Oxide, Amorphous Film of Composite Oxide, Process for Producing said Film, Crystalline Film of Composite Oxide and Process for Producing said Film - Provided is an amorphous film substantially comprised of indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen. The film can be further crystallized by annealing at a temperature of 260° C. or lower in which resistivity of the film will be 0.4 mΩcm or less. An ITO thin film for use as a display electrode or the like in a flat panel display can be made into an amorphous ITO film by way of sputter deposition without heating the substrate or adding water during deposition. This ITO film is characterized in that it will crystallize by annealing at a temperature of 260° C. or less, which is not such a high temperature, and have low resistivity after being crystallized. Thus, the present invention aims to provide a method of producing such a film and a sintered compact for producing such a film. | 06-10-2010 |
20100300878 | Sintered Oxide Compact Target for Sputtering and Process for Producing the same - Provided is a sintered oxide compact target for sputtering comprising indium (In), gallium (Ga), zinc (Zn), oxygen (O) and unavoidable impurities, wherein the composition ratio of the respective elements satisfies the Formula of In | 12-02-2010 |
20120103804 | Oxide Sintered Compact, Its Production Method, and Raw Material Powder for Producing Oxide Sintered Compact - An oxide sintered compact made of indium (In), gallium (Ga), zinc (Zn) and oxygen (O) and represented by a formula of InxGayZnzOa [wherein x/(x+y) is 0.2 to 0.8, z/(x+y+z) is 0.1 to 0.5, and a=(3/2)x+(3/2)y+z], wherein the concentration of volatile impurities contained in the oxide sintered compact is 20 ppm or less. Provided is technology for application to the production of an IGZO target capable of achieving high densification and low bulk resistance of the sputtering target, preventing swelling and cracks of the target during the production process, minimizing the generation of nodules, inhibiting abnormal discharge, and enabling DC sputtering. | 05-03-2012 |
20120319057 | Sintered Compact, Amorphous Film and Crystalline Film of Composite Oxide, and Process for Producing the Films - An amorphous film comprising indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen, is provided. The film can be crystallized by annealing at 260° C. or lower in which resistivity of the film will be 0.4 mΩcm or less. In this manner, an ITO thin film for use as a display electrode or the like in a flat panel display can be made into an amorphous ITO film by way of sputter deposition without heating the substrate or adding water during deposition. This ITO film can be crystallized by annealing at a low temperature and will have low resistivity. Methods of producing such films and sintered compacts are provided. | 12-20-2012 |
20140367252 | Sputtering Target Assembly - Provided is a sputtering target assembly comprising two or more sputtering target-backing plate bonded bodies B aligned in the width direction, wherein the sputtering target-backing plate bonded bodies B each include a cylindrical target having a diameter of 100 mm or more and a length of 1000 mm or more and composed of three or more target pieces A being divided such that the dividing lines lie in the circumferential direction and being bonded or placed onto a cylindrical or columnar backing plate, wherein the bonded bodies B are arranged to form the sputtering target assembly in such a manner that the dividing lines between the three target pieces of one bonded body B are not present at the same positions of the dividing lines between fractional target pieces of adjacent another bonded body B. It is an object of the present invention to provide a sputtering target assembly that can reduce defects due to occurrence of particles originated from the piece-bonding area. | 12-18-2014 |
Patent application number | Description | Published |
20080311429 | MAGNETIC FILM, MAGNETIC RECORDING/ REPRODUCING DEVICE, AND POLARIZATION CONVERSION COMPONENT - The disclosure provides a magnetic film which includes a titania nanosheet which is formed on a transparent substrate and contains a layered titanium oxide in which at least one magnetic element is substituted for a Ti lattice position, the titanium oxide being expressed by a formula: Ti | 12-18-2008 |
20100226067 | Dielectric element and method for producing the dielectric element - Provided is a dielectric element comprising a dielectric thin film formed of a layer of perovskite nanosheets. The dielectric element has the advantages of inherent properties and high-level texture and structure controllability of the perovskite nanosheets, therefore realizing both a high dielectric constant and good insulating properties in a nano-region. | 09-09-2010 |
20110147060 | DIELECTRIC FILM, DIELECTRIC ELEMENT, AND PROCESS FOR PRODUCING THE DIELECTRIC ELEMENT - A monolayer or a multilayer of niobic acid nanosheets is attached to form a dielectric film, and other electrode is arranged on the surface of the dielectric film to construct a dielectric element, and the dielectric element thus provided realizes both high permittivity and good insulating properties even in a nano-region. Also provided is a method of producing the element at low temperatures with no influence of substrate interface deterioration and composition deviation thereof. The method entirely solves the problems of substrate interface deterioration and the accompanying composition deviation and electric incompatibility, and solves the intrinsic problem of “size effect” that the film thickness reduction to a nano-level lowers the specific permittivity and increases the leak current, and the method takes advantage of the peculiar properties and good ability of texture and structure regulation that the niobic acid nanosheet has. | 06-23-2011 |
20110183133 | ELECTROMAGNETIC WAVE ABSORBENT MATERIAL - Provided is an electromagnetic wave absorbent material comprising a magnetic film as the main constituent thereof. The magnetic film comprises a titania nanosheet where a 3d magnetic metal element is substituted at the titanium lattice position. The electromagnetic wave absorbent material stably and continuously exhibits electromagnetic wave absorption performance in a range of from 1 to 15 GHz band and is useful as mobile telephones, wireless LANs and other mobile electronic instruments. The absorbent material can be fused with a transparent medium and is applicable to transparent electronic devices such as large-sized liquid crystal TVs, electronic papers, etc. | 07-28-2011 |
20120292554 | ELECTROMAGNETIC WAVE ABSORBENT MATERIAL - Provided is an electromagnetic wave absorbent material comprising a magnetic film as the main constituent thereof. The magnetic film comprises a titania nanosheet where a 3d magnetic metal element is substituted at the titanium lattice position. The electromagnetic wave absorbent material stably and continuously exhibits electromagnetic wave absorption performance in a range of from 1 to 15 GHz band and is useful as mobile telephones, wireless LANs and other mobile electronic instruments. The absorbent material can be fused with a transparent medium and is applicable to transparent electronic devices such as large-sized liquid crystal TVs, electronic papers, etc. | 11-22-2012 |
20130101829 | METHODS FOR PRODUCING A THIN FILM CONSISTING OF NANOSHEET MONOLAYER FILM(S) BY SPIN COAT METHODS, AND HYPERHYDROPHILIZED MATERIALS, SUBSTRATES FOR AN OXIDE THIN FILM AND DIELECTRIC MATERIALS OBTAINED THEREFROM - To provide a method for producing a thin film consisting of nanosheet monolayer film(s) and use of the thin film obtained thereby. | 04-25-2013 |
20130244016 | FERROELECTRIC THIN FILM HAVING SUPERLATTICE STRUCTURE, MANUFACTURING METHOD THEREOF, FERROELECTRIC ELEMENT, AND MANUFACTURING METHOD THEREOF - At least two types of dielectric materials such as oxide nanosheets having a layered perovskite structure that differ from each other are laminated, and the nanosheets are bonded to each other via an ionic material, thereby producing a superlattice structure-having ferroelectric thin film. Having the layered structure, the film can exhibit ferroelectricity as a whole, though not using a ferroelectric material therein. Accordingly, there is provided a ferroelectric film based on a novel principle, which is favorable for ferroelectric memories and others and which is free from a size effect even though extremely thinned. | 09-19-2013 |
20140002816 | SUBSTRATE FOR SURFACE ENHANCED RAMAN SPECTROSCOPY ANALYSIS AND MANUFACTURING METHOD OF THE SAME, BIOSENSOR USING THE SAME, AND MICROFLUIDIC DEVICE USING THE SAME | 01-02-2014 |
20140150966 | HIGH DIELECTRIC NANOSHEET LAMINATE, HIGH DIELECTRIC ELEMENT AND METHOD FOR PRODUCING THE SAME - A high dielectric nanosheet laminate is produced by laminating nanosheets, each of which has a thickness of 10 nm or less and is formed of an oxide that has a perovskite structure wherein at least four NbO | 06-05-2014 |
Patent application number | Description | Published |
20130167687 | NICKEL ALLOY - There is provided a nickel alloy having an excellent creep strength as well as high-temperature oxidation resistance. The nickel alloy of the present invention comprises, by mass percent, Cr in a range of 11.5 to 11.9%, Co in a range of 25 to 29%, Mo in a range of 3.4 to 3.7%, W in a range of 1.9 to 2.1%, Ti in a range of 3.9 to 4.4%, Al in a range of 2.9 to 3.2%, C in a range of 0.02 to 0.03%, B in a range of 0.01 to 0.03%, Zr in a range of 0.04 to 0.06%, Ta in a range of 2.1 to 2.2%, Hf in a range of 0.3 to 0.4%, and Nb in a range of 0.5 to 0.8%, the balance being Ni and unavoidable impurities, and contains carbides and borides precipitating in crystal grains and at grain boundaries. | 07-04-2013 |
20130316891 | OXIDE MATRIX COMPOSITE MATERIAL - The oxide matrix composite material is obtained by subjecting a fiber composed of at least one oxide or complex oxide and a matrix composed of at least one oxide or complex oxide to composite formation. For the fiber and the matrix, a component composition is selected such that the fiber and the matrix keep thermodynamic equilibrium to each other in a temperature range not exceeding the melting temperature, and a fiber diameter of the fiber at the time of equilibrium keeps ½ or more of a fiber diameter of the fiber at the start of the composite formation. | 11-28-2013 |
20140373979 | NICKEL-BASED HEAT-RESISTANT SUPERALLOY - Disclosed herein is a nickel-based heat-resistant superalloy produced by a casting and forging method, the nickel-based heat-resistant superalloy comprising 2.0 mass % or more but 25 mass % or less of chromium, 0.2 mass % or more but 7.0 mass % or less of aluminum, 19.5 mass % or more but 55.0 mass % or less of cobalt, [0.17×(mass % of cobalt content−23)+3] mass % or more but [0.17×(mass % of cobalt content−20)+7] mass % or less and 5.1 mass % or more of titanium, and the balance being nickel and inevitable impurities, and being subjected to solution heat treatment at 93% or more but less than 100% of a γ′ solvus temperature. | 12-25-2014 |