| Patent application number | Description | Published |
|---|
| 20080282106 | DATA STORAGE WITH INCREMENTAL REDUNDANCY - A method for operating a memory includes encoding input data with an Error Correction Code (ECC) to produce input encoded data including first and second sections, such that the ECC is decodable based on the first section at a first redundancy, and based on both the first and the second sections at a second redundancy that is higher than the first redundancy. | 11-13-2008 |
| 20090158126 | EFFICIENT INTERFERENCE CANCELLATION IN ANALOG MEMORY CELL ARRAYS - A method includes storing data in a group of analog memory cells by writing first storage values to the cells. After storing the data, second storage values are read from the cells using one or more first read thresholds. Third storage values that potentially cause cross-coupling interference in the second storage values are identified, and the third storage values are processed, to identify a subset of the second storage values as severely-interfered values. Fourth storage values are selectively re-read from the cells holding the severely-interfered values using one or more second read thresholds, different from the first read thresholds. The cross-coupling interference in the severely-interfered storage values is canceled using the re-read fourth storage values. The second storage values, including the severely-interfered values in which the cross-coupling interference has been canceled, are processed so as to reconstruct the data stored in the cell group. | 06-18-2009 |
| 20090168524 | WEAR LEVEL ESTIMATION IN ANALOG MEMORY CELLS - A method for operating a memory includes applying at least one pulse to a group of analog memory cells, so as to cause the memory cells in the group to assume respective storage values. After applying the pulse, the respective storage values are read from the memory cells in the group. One or more statistical properties of the read storage values are computed. A wear level of the group of the memory cells is estimated responsively to the statistical properties. | 07-02-2009 |
| 20090213653 | PROGRAMMING OF ANALOG MEMORY CELLS USING A SINGLE PROGRAMMING PULSE PER STATE TRANSITION - A method for data storage in analog memory cells includes defining multiple programming states for storing data in the analog memory cells. The programming states represent respective combinations of more than one bit and correspond to respective, different levels of a physical quantity stored in the memory cells. The data is stored in the memory cells by applying to the memory cells programming pulses that cause the levels of the physical quantity stored in the memory cells to transition between the programming states, such that a given transition is caused by only a single programming pulse. | 08-27-2009 |
| 20100091535 | ADAPTIVE ESTIMATION OF MEMORY CELL READ THRESHOLDS - A method for operating a memory ( | 04-15-2010 |
| 20100131826 | ESTIMATION OF NON-LINEAR DISTORTION IN MEMORY DEVICES - A method for operating a memory ( | 05-27-2010 |
| 20100157675 | PROGRAMMING ORDERS FOR REDUCING DISTORTION IN ARRAYS OF MULTI-LEVEL ANALOG MEMORY CELLS - A method for data storage includes predefining an order of programming a plurality of analog memory cells that are arranged in rows. The order specifies that for a given row having neighboring rows on first and second sides, the memory cells in the given row are programmed only while the memory cells in the neighboring rows on at least one of the sides are in an erased state, and that the memory cells in the given row are programmed to assume a highest programming level, which corresponds to a largest analog value among the programming levels of the cells, only after programming all the memory cells in the given row to assume the programming levels other than the highest level. Data is stored in the memory cells by programming the memory cells in accordance with the predefined order. | 06-24-2010 |
