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Ootaguro

Akira Ootaguro, Ome JP

Patent application number	Description	Published
20080203531	SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In this invention, the film thicknesses of an upper barrier film of a lower electrode of a capacitive element and an upper barrier film of a metallic interconnect layer formed in the same layer as this is made thicker than the film thicknesses of upper barrier films of other metallic interconnect layers. Moreover, in this invention, the film thickness of the upper barrier film of the lower electrode of the capacitive element is controlled to be 110 nm or more, more preferably, 160 nm or more. A decrease in the dielectric voltage of the capacitive dielectric film due to cracks in the upper barrier film does not occur and the deposition temperature of the capacitive dielectric film can be made higher, so that a semiconductor device having a MIM capacitor with high performance and high capacitance can be achieved, where the dielectric voltage of the capacitive dielectric film is improved.	08-28-2008
20100181647	SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In this invention, the film thicknesses of an upper barrier film of a lower electrode of a capacitive element and an upper barrier film of a metallic interconnect layer formed in the same layer as this is made thicker than the film thicknesses of upper barrier films of other metallic interconnect layers. Moreover, in this invention, the film thickness of the upper barrier film of the lower electrode of the capacitive element is controlled to be 110 nm or more, more preferably, 160 nm or more. A decrease in the dielectric voltage of the capacitive dielectric film due to cracks in the upper barrier film does not occur and the deposition temperature of the capacitive dielectric film can be made higher, so that a semiconductor device having a MIM capacitor with high performance and high capacitance can be achieved, where the dielectric voltage of the capacitive dielectric film is improved.	07-22-2010

Atsushi Ootaguro, Hamamatsu-Shi JP

Patent application number	Description	Published
20110239445	METHOD FOR REUSING SECONDARY BATTERY - A method for reusing a secondary battery by reusing unit cells or battery modules constituting reclaimed assembled batteries (or battery packs) to reconstruct a new assembled battery is disclosed. Assembled batteries are reclaimed, and disassembled into battery modules. The battery modules are selected based on battery characteristics such as an open-circuit voltage (OCV) and the like using an absolute acceptable range and a relative acceptable range, and a new assembled battery is rebuilt. The relative acceptable range is an acceptable range which is set for each assembled battery, and is set to have its center at an average value of a battery characteristic distribution.	10-06-2011

Hiroshi Ootaguro, Kanazawa-Shi JP

Patent application number	Description	Published
20100031983	SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes a bath, in which a liquid or a gas is fed, and a mechanism which feeds out a liquid or a gas into the bath. The substrate processing apparatus processes a to-be-processed substrate which is disposed in the bath. At least one rectifying plate is disposed near the to-be-processed substrate between the to-be-processed substrate and the mechanism.	02-11-2010
20100032410	SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A substrate processing apparatus includes a bath in which a liquid or a gas is fed, and a mechanism which feeds out a liquid or a gas into the bath. The substrate processing apparatus processes a to-be-processed substrate which is disposed in the bath. The mechanism includes a first feed-out device and a second feed-out device configured to feed out the liquid or gas into the bath, the first feed-in device configured to start/stop the feed-out of the liquid or gas from the first feed-out device, and second feed-in device configured to start/stop the feed-out of the liquid or gas from the second feed-out device.	02-11-2010

Hiroshi Ootaguro, Ishikawa JP

Patent application number	Description	Published
20100014043	LIQUID CRYSTAL DISPLAY ELEMENT - A protruding portion	01-21-2010