Oori
Misao Oori, Tochigi-Ken JP
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20110148164 | VEHICLE SEAT - A vehicle seat includes a reclining mechanism having a lock member, which is engaged with a ring member when it is pressed by a cam body, and a walk-in mechanism. A rotating arm, which is rotated by operation of a reclining lever or a walk-in lever, is secured to a center shaft. The reclining lever operates the rotation of the rotating arm by means of a link lever having a slot. The walk-in lever operates the rotation of the rotating arm independently of the reclining lever. When a seatback is tilted forward by the operation of the walk-in lever, the slide mechanism of the vehicle seat is unlocked, and the entire seat is moved forward. | 06-23-2011 |
Tomoya Oori, Mie-Ken JP
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20110034029 | PATTERN FORMATION METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - According to one embodiment, a pattern formation method is disclosed. The method includes forming a plurality of regions on a foundation and the plurality of the regions correspond to different pattern sizes. The method includes separating each of a plurality of block copolymers from another one of the plurality of the block copolymers and segregating the each of the plurality of the block copolymers into a corresponding one of the regions. The method includes performing a phase separation of the each of the block copolymers of each of the regions. The method includes selectively removing a designated phase of each of the phase-separated block copolymers to form a pattern of the each of the block copolymers and the pattern has a different pattern size for the each of the regions. | 02-10-2011 |
20110086313 | METHOD AND SYSTEM OF MANUFACTURING SEMICONDUCTOR DEVICE - In one embodiment, a method is disclosed for manufacturing a semiconductor device. The method can forms a resist film on a substrate. The method can expose a portion of the resist film. The portion is formed on a device area of the substrate and the device area includes a center portion of the substrate. After the exposing the device area, the method can apply a reaction control process for controlling expansion of a reacted region in the resist film. After the applying the reaction control process, the method can expose another portion of the resist film and the another portion is formed on a peripheral area surrounding the device area. After the exposing the peripheral area, the method can heat the resist film, and after the heating, the method can develop the resist film. | 04-14-2011 |
20140065556 | PATTERNING METHOD - According to one embodiment, a patterning method includes exposure-transferring a plurality of first island pattern images and a plurality of second island pattern images onto a resist film, each of the plurality of first island pattern images having a configuration having a contour line or a major axis extending in a third direction, the plurality of first island pattern images having a staggered arrangement, each of the plurality of second island pattern images having a configuration having a contour line or a major axis extending in a fourth direction, the plurality of second island pattern images having a staggered arrangement, the first island pattern images and the second island pattern images being continuous in the first direction by a portion of each of the second island pattern images overlapping one of the first island pattern images. | 03-06-2014 |
20140234782 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device according to an embodiment of the invention includes applying a resist on a substrate surface in a resist application apparatus, light-exposing the resist on the substrate surface in a light exposure apparatus, and after the light-exposing the resist, developing the resist in a development apparatus. The resist is a negative resist. The developing the resist includes mounting the substrate on a support stage including a rotating mechanism of the development apparatus, after the mounting the substrate on the support stage, developing the resist, after the mounting the substrate on the support stage, removing the resist on a peripheral edge of the substrate, and after the developing the resist, and after the removing the resist on the peripheral edge of the substrate, dismounting the substrate from the support stage. | 08-21-2014 |
Tomoya Oori, Kanagawa JP
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20090305166 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device according to one embodiment, includes: forming a first mask material film on a workpiece film formed on a semiconductor substrate; forming a resist pattern on the first mask material film; forming a second mask material film having a desired film thickness on the first mask material film so as to cover the resist pattern; carrying out etchback of the second mask material film so as to expose the resist pattern and the first mask material film; processing the resist pattern and the first mask material film simultaneously which are exposed, while leaving the second mask material film of which etchback is carried out; and processing the workpiece film which exposes under the first mask material film. | 12-10-2009 |
20100183982 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device according to an embodiment includes: forming a first resist pattern made of a first resist material on a workpiece material; irradiating an energy beam onto the first resist pattern, the energy beam exposing the first resist material to light; performing a treatment for improving resistance the first resist pattern after irradiation of the energy beam; forming a coating film on the workpiece material so as to cover the first resist pattern; and forming a second resist pattern made of a second resist material on the coating film after the treatment. | 07-22-2010 |
Tomoya Oori, Kanagawa-Ken JP
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20100120255 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device manufacturing method includes: forming a core pattern on a foundation film, the core pattern containing a material generating acid by light exposure; selectively exposing part of the core pattern except an longitudinal end portion; supplying a mask material onto the foundation film so as to cover the core pattern, the mask material being crosslinkable upon supply acid from the core pattern; etching back the mask material to expose an upper surface of the core pattern and remove a portion of the mask material formed on the end portion of the core pattern, thereby leaving a mask material side wall portion formed on a side wall of the core pattern; and removing the core pattern and processing the foundation film by using the mask material sidewall portion left on the foundation film as a mask. | 05-13-2010 |
Tomoya Oori, Mie JP
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20120322273 | COATING FILM FORMING METHOD AND COATING FILM FORMING APPARATUS - A coating film forming method according to an embodiment, includes rotating a substrate, supplying a chemical solution for forming a coating film onto the rotating substrate, and supplying a liquid having a lower temperature than an atmosphere of the substrate to an edge of the substrate from a back side of the substrate while a film is formed by supplying the chemical solution onto the rotating substrate. | 12-20-2012 |