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Oori
Misao Oori, Tochigi-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20110148164 | VEHICLE SEAT - A vehicle seat includes a reclining mechanism having a lock member, which is engaged with a ring member when it is pressed by a cam body, and a walk-in mechanism. A rotating arm, which is rotated by operation of a reclining lever or a walk-in lever, is secured to a center shaft. The reclining lever operates the rotation of the rotating arm by means of a link lever having a slot. The walk-in lever operates the rotation of the rotating arm independently of the reclining lever. When a seatback is tilted forward by the operation of the walk-in lever, the slide mechanism of the vehicle seat is unlocked, and the entire seat is moved forward. | 06-23-2011 |
Tomoya Oori, Mie-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20110034029 | PATTERN FORMATION METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - According to one embodiment, a pattern formation method is disclosed. The method includes forming a plurality of regions on a foundation and the plurality of the regions correspond to different pattern sizes. The method includes separating each of a plurality of block copolymers from another one of the plurality of the block copolymers and segregating the each of the plurality of the block copolymers into a corresponding one of the regions. The method includes performing a phase separation of the each of the block copolymers of each of the regions. The method includes selectively removing a designated phase of each of the phase-separated block copolymers to form a pattern of the each of the block copolymers and the pattern has a different pattern size for the each of the regions. | 02-10-2011 |
| 20110086313 | METHOD AND SYSTEM OF MANUFACTURING SEMICONDUCTOR DEVICE - In one embodiment, a method is disclosed for manufacturing a semiconductor device. The method can forms a resist film on a substrate. The method can expose a portion of the resist film. The portion is formed on a device area of the substrate and the device area includes a center portion of the substrate. After the exposing the device area, the method can apply a reaction control process for controlling expansion of a reacted region in the resist film. After the applying the reaction control process, the method can expose another portion of the resist film and the another portion is formed on a peripheral area surrounding the device area. After the exposing the peripheral area, the method can heat the resist film, and after the heating, the method can develop the resist film. | 04-14-2011 |
Tomoya Oori, Kanagawa JP
| Patent application number | Description | Published |
|---|---|---|
| 20090305166 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device according to one embodiment, includes: forming a first mask material film on a workpiece film formed on a semiconductor substrate; forming a resist pattern on the first mask material film; forming a second mask material film having a desired film thickness on the first mask material film so as to cover the resist pattern; carrying out etchback of the second mask material film so as to expose the resist pattern and the first mask material film; processing the resist pattern and the first mask material film simultaneously which are exposed, while leaving the second mask material film of which etchback is carried out; and processing the workpiece film which exposes under the first mask material film. | 12-10-2009 |
| 20100183982 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device according to an embodiment includes: forming a first resist pattern made of a first resist material on a workpiece material; irradiating an energy beam onto the first resist pattern, the energy beam exposing the first resist material to light; performing a treatment for improving resistance the first resist pattern after irradiation of the energy beam; forming a coating film on the workpiece material so as to cover the first resist pattern; and forming a second resist pattern made of a second resist material on the coating film after the treatment. | 07-22-2010 |
Tomoya Oori, Kanagawa-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20100120255 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device manufacturing method includes: forming a core pattern on a foundation film, the core pattern containing a material generating acid by light exposure; selectively exposing part of the core pattern except an longitudinal end portion; supplying a mask material onto the foundation film so as to cover the core pattern, the mask material being crosslinkable upon supply acid from the core pattern; etching back the mask material to expose an upper surface of the core pattern and remove a portion of the mask material formed on the end portion of the core pattern, thereby leaving a mask material side wall portion formed on a side wall of the core pattern; and removing the core pattern and processing the foundation film by using the mask material sidewall portion left on the foundation film as a mask. | 05-13-2010 |