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Ookura

Jun Ookura, Koshi-Shi JP

Patent application numberDescriptionPublished
20080283515TEMPERATURE CONTROL FOR PERFORMING HEAT PROCESS IN COATING/DEVELOPING SYSTEM FOR RESIST FILM - A temperature control method is used for controlling a temperature of a hot plate, so that a measured temperature of the hot plate conforms to a target temperature thereof, in a heat processing apparatus for performing a heat process on a substrate placed on the hot plate, which is used in a coating/developing system for applying a resist coating onto the substrate to form a resist film and then performing development on the resist film after light exposure. The method includes acquiring adjustment data necessary for adjusting a reaching time defined by a time period for increasing the temperature of the substrate from a first temperature around an initial temperature to a second temperature around the target temperature; and adjusting the target temperature by use of the adjustment data thus acquired, after starting the process on the substrate.11-20-2008

Jun Ookura, Koshi-City JP

Patent application numberDescriptionPublished
20120031892Heat Treatment Method, Recording Medium Having Recorded Program for Executing Heat Treatment Method, and Heat Treatment Apparatus - Disclosed is a method of a thermal processing including a first process and a second process. The first process between first wafer (initial wafer) W1 and second wafer (next wafer) W2 (and subsequent wafers W), comprises changing a set temperature of a heating plate from a first temperature to a second temperature which is lower than the first temperature; and initiating a thermal processing for a first substrate before the temperature of the heating plate reaches the second temperature. The second process comprises changing the set temperature of the heating plate from the second temperature to a third temperature which is higher than the second temperature, after the first process for the first substrate is completed; and initiating a thermal processing for a second substrate when the temperature of the heating plate is changed from the third temperature to the second temperature after the temperature of the heating plate reached the third temperature.02-09-2012

Kenji Ookura, Kadoma-Shi JP

Patent application numberDescriptionPublished
20100304584CONNECTOR SET AND JOINTER FOR USE THEREIN - A connector set includes at least one of a header and a socket and a jointer. The jointer extends in a direction and is configured to couple the header and the socket so as to be in parallel with each other. The jointer includes first jointer connecting portions provided at both end portions thereof and extending in a second direction perpendicular to the first direction, and which are configured to engage first connecting portions provided at both end portions of the header, and second jointer connecting portions provided at both end portions of the jointer body and extending in a third direction opposite to the second direction, and which are configured to engage the second connecting portions provided at both end portions of the socket.12-02-2010
20120003859CONNECTOR SET AND JOINTER FOR USE THEREIN - A connector set includes at least one of a header and a socket and a jointer. The jointer extends in a direction and is configured to couple the header and the socket so as to be in parallel with each other. The jointer includes first jointer connecting portions provided at both end portions thereof and extending in a second direction perpendicular to the first direction, and which are configured to engage first connecting portions provided at both end portions of the header, and second jointer connecting portions provided at both end portions of the jointer body and extending in a third direction opposite to the second direction, and which are configured to engage the second connecting portions provided at both end portions of the socket.01-05-2012

Kenji Ookura, Tsu-Shi JP

Patent application numberDescriptionPublished
20110195610SOCKET AND CONNECTOR - A socket includes a substantially rectangular columnar socket body made of an insulating material and the socket body including a connection recess portion defined on one surface thereof. Side walls opposed to each other in a transverse direction and lead-out pathways formed in the side walls. The socket further includes a plurality of socket contact members arranged side by side within the connection recess portion along a longitudinal direction. One-end portions of the socket contact members extend through the lead-out pathways and protruding outwards beyond an outer surface of at least one of the side walls of the socket body. The socket body includes a depression portion formed on the side wall through which the socket contact members protrude and the depression portion being formed at least around the socket contact members.08-11-2011

Kouichi Ookura, Yokohama JP

Patent application numberDescriptionPublished
20090307301METHOD AND APPARATUS FOR CONDUCTING A TRANSACTION BETWEEN TRANSACTION PROCESSING SYSTEMS - When investigating a failure occurring in a transaction between information processing apparatuses, it is possible to reduce the time required for the failure investigation. A first local ID for identifying a transaction processing of first information processing apparatus is related with a standard ID for relating transaction processing of the first and the second information processing apparatuses with each other the related IDs and are stored in a first mapping table. The standard ID and a transaction processing request are transmitted to the second information processing apparatus to request execution of a transaction processing therefor. If a failure occurs in the requested transaction processing, a standard ID of the transaction processing concerned is specified to inquire a second local ID for identifying the transaction processing. Mapping information for relating the first local ID corresponding to the specified standard ID with the transmitted second local ID is generated.12-10-2009

Masahiro Ookura, Tokyo JP

Patent application numberDescriptionPublished
20110090343COMPOSITE IMAGE GENERATING SYSTEM, OVERLAYING CONDITION DETERMINING METHOD, IMAGE PROCESSING APPARATUS, AND IMAGE PROCESSING PROGRAM - A mark which at least reflects or radiates invisible light of predetermined wavelength other than visible light is added in a space of the real world. A camera apparatus comprises image capturing means for capturing a real image in which an invisible-light image may be discriminating. An image processing apparatus, comprises: mark discriminating means for discriminating at least one condition of a position of image of mark in the captured real image, a orientation of the mark, and a distance from the mark to the image capturing means, and overlaying condition determining means for determining, in correspondence with the discriminated condition, a overlaying condition which is at least one of an overlaying position which is a position of the image of the virtual object overlaid on the captured real image in the real image, an orientation of the virtual object which the age of the virtual object indicates, and a distance from a view point of viewer, of the image of the virtual object.04-21-2011

Takeo Ookura, Kanagawa JP

Patent application numberDescriptionPublished
20110255835Light Guide for Light Source Device and Method for Manufacturing the Same - A light guide for a light source device includes a core layer which is formed from a transparent resin and has a refractive index n10-20-2011

Yasushi Ookura, Okazaki-City JP

Patent application numberDescriptionPublished
20100327455Semiconductor device including two heat sinks and method of manufacturing the same - A semiconductor device includes a semiconductor element, a first heat sink, a second heat sink, and a resin member. The semiconductor element has first and second surfaces. The first heat sink has a first heat radiation surface and a first end surface. The first end surface is coupled with the first surface. The second heat sink has a second heat radiation surface, the second end surface being opposite the second heat radiation surface, and a depressed section depressed toward the second heat radiation surface. The second surface of the semiconductor element is coupled with a bottom surface of the depressed section. The resin member is disposed in the depressed section and seals the semiconductor element, the first heat sink, and the second heat sink in such a manner that the first heat radiation surface is exposed outside the resin member.12-30-2010
20120001308SEMICONDUCTOR MODULE AND METHOD OF MANUFACTURING THE SAME - In a semiconductor module, a first heat sink is disposed on a rear surface of a first semiconductor chip constituting an upper arm, and a second heat sink is disposed on a front surface of the first semiconductor chip through a first terminal. A third heat sink is disposed on a rear surface of a second semiconductor chip constituting a lower arm, and a fourth heat sink is disposed on a front surface of the second semiconductor chip through a second terminal. A connecting part for connecting between the upper arm and the lower arm is integral with the first terminal, and is connected to the third heat sink while being inclined relative to the first terminal.01-05-2012
20120043581SEMICONDUCTOR DEVICE - In a semiconductor device, an IGBT cell includes a trench passing through a base layer of a semiconductor substrate to a drift layer of the semiconductor substrate, a gate insulating film on an inner surface of the trench, a gate electrode on the gate insulating film, a first conductivity-type emitter region in a surface portion of the base layer, and a second conductivity-type first contact region in the surface portion of the base layer. The IGBT cell further includes a first conductivity-type floating layer disposed within the base layer to separate the base layer into a first portion including the emitter region and the first contact region and a second portion adjacent to the drift layer, and an interlayer insulating film disposed to cover an end of the gate electrode. A diode cell includes a second conductivity-type second contact region in the surface portion of the base layer.02-23-2012

Yasushi Ookura, Okazaki-Shi JP

Patent application numberDescriptionPublished
20120043582SEMICONDUCTOR DEVICE HAVING BOTH IGBT AREA AND DIODE AREA - There is known a semiconductor device in which an IGBT structure is provided in an IGBT area and a diode structure is provided in a diode area, the IGBT area and the diode area are both located within a same substrate, and the IGBT area is adjacent to the diode area. In this type of semiconductor device, a phenomenon that carriers accumulated within the IGBT area flow into the diode area when the IGBT structure is turned off. In order to prevent this phenomenon, a region of shortening lifetime of carriers is provided at least in a sub-area that is within said IGBT area and adjacent to said diode area. In the sub-area, emitter of IGBT structure is omitted.02-23-2012

Yoshitomi Ookura, Mito JP

Patent application numberDescriptionPublished
20100030353PROCESS CONTROL DEVICE, PROCESS CONTROL METHOD, AND PROCESS CONTROL SYSTEM - A process control device includes a tracking controller receiving event information indicating that a product pass a predetermined location is received; a conductor unit for determining a corresponding process based on the event information; and a work instruction unit for issuing a work instruction for the product in the production line in response to the request from the conductor unit. The device further includes a work instruction past record control unit for controlling past record of the work instructions in response to an issue of the work instruction; a work instruction sequence order control unit for controlling a sequence order of the work instructions; and a work instruction sequence order storage for storing information of the sequence order of the work instructions to control the information of the sequence order of the work instructions in addition to the current location information of the product.02-04-2010

Yoshiyuki Ookura, Shinjuku-Ku JP

Patent application numberDescriptionPublished
20110291204SEMICONDUCTOR DEVICE HAVING STI WITH NITRIDE LINER AND UV LIGHT SHIELDING FILM - A semiconductor device has: a silicon substrate; trench formed downward from the surface of the silicon substrate, the trench defining active regions on the surface of the silicon substrate; a first liner layer of a silicon nitride film covering an inner wall of the trench; a second liner layer of a silicon nitride layer formed on the first liner layer; an element isolation region of an insulator formed on the second liner layer; a p-channel MOS transistor formed in and on one of the active regions; a contact etch stopper layer of a silicon nitride layer not having a ultraviolet shielding ability, formed above the silicon substrate, and covering the p-channel MOS transistor; and a light shielding film of a silicon nitride layer having the ultraviolet shielding ability and formed above the contact etch stopper layer.12-01-2011