Ookouchi, JP
Atsushi Ookouchi, Kumamoto-Ken JP
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20090130614 | Development device and development method - A developer nozzle is moved from a periphery of a wafer toward the central portion while an exposed substrate held at a spin chuck is being rotated about a vertical axis and while a developing solution is being discharged from the developer nozzle, and this way the developing solution is supplied to the surface of the wafer, the developer nozzle having a slit-like ejection port whose longitudinal direction is oriented to the direction perpendicular to the radial direction of the wafer. The movement speed of the nozzle is higher than a case where a nozzle with a small-diameter circular nozzle is used, and this enables a development time to be reduced. Further, the thickness of a developing solution on a substrate can be reduced, so that the developing solution can be saved. | 05-21-2009 |
Atsushi Ookouchi, Koshi-Shi JP
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20090035021 | DEVELOPING METHOD, DEVELOPING APPARATUS AND STORAGE MEDIUM - The present invention provides a method of supplying a developing solution, stably, onto a substrate, upon providing a developing process to the substrate which has been coated with a resist and subjected to an exposure process. In this method, the developing solution is supplied onto the substrate from a first developing solution nozzle, so as to form a ribbon-like region on the surface of the substrate, while rotating the substrate about a vertical axis via a substrate holding part, wherein one end of the ribbon-like region is oriented toward a central portion of the substrate. At this time, by shifting a position of the ribbon-like region in which the developing solution is supplied, a liquid film of the developing solution can be formed on the surface of the substrate. Subsequently, in order to prevent the liquid film of the developing solution from being dried up, the developing solution is supplied from a second developing solution nozzle, so as to form a circular region on the central portion of the substrate or form a ribbon-like region shorter in length than the ribbon-like region of the developing solution supplied from the first developing nozzle. Simultaneously, the substrate is rotated about the vertical axis via the substrate holding part, thereby spreading the developing solution toward a peripheral portion of the substrate by centrifugal force. In this manner, the developing nozzles are selected, corresponding to the process to be performed. | 02-05-2009 |
20100330508 | DEVELOPING APPARATUS AND DEVELOPING METHOD - A developer nozzle is moved from a periphery of a wafer toward the central portion while an exposed substrate held at a spin chuck is being rotated about a vertical axis and while a developing solution is being discharged from the developer nozzle, and this way the developing solution is supplied to the surface of the wafer, the developer nozzle having a slit-like ejection port whose longitudinal direction is oriented to the direction perpendicular to the radial direction of the wafer. The movement speed of the nozzle is higher than a case where a nozzle with a small-diameter circular nozzle is used, and this enables a development time to be reduced. Further, the thickness of a developing solution on a substrate can be reduced, so that the developing solution can be saved. | 12-30-2010 |
20110127236 | DEVELOPING DEVICE AND DEVELOPING METHOD - The temperature of a developing solution is varied depending on the type of resist or the resist pattern. The developing solution is applied while scanning a developer nozzle having a slit-shaped ejection port that has a length matching the width of the effective area of the substrate. After leaving the substrate with the developing solution being coated thereon for a predetermined period of time, a diluent is supplied while scanning a diluent nozzle, thereby substantially stopping the development reaction and causing the dissolved resist components to diffuse. A desired amount of resist can be quickly dissolved through the control of the developing solution temperature, while the development can be stopped before the dissolved resist components exhibit adverse effect through the supply of the diluent a predetermined timing, whereby achieving a pattern having a uniform line width and improved throughput. | 06-02-2011 |
Atsushi Ookouchi, Kikuchi-Gun JP
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20100323307 | DEVELOPING APPARATUS AND METHOD - A developing apparatus for developing a substrate whose surface is coated with a coating solution and then exposed includes a substrate supporting unit for horizontally supporting the substrate, a rotation driving mechanism for rotating the substrate supporting unit forwardly or backwardly with respect to a vertical axis, a developer nozzle, disposed to face a surface of the substrate supported by the substrate supporting unit, having a strip-shaped injection opening extended along a direction extending from a periphery of the substrate toward a central portion thereof, a moving unit for moving the developer nozzle from an outer portion of the substrate toward the central portion thereof, and a controller for controlling operations such that while the substrate is rotated forwardly by the rotation driving mechanism, a developer is supplied through the injection opening to the surface of the substrate by moving the developer nozzle and, then, the substrate is rotated backwardly by the rotation driving mechanism. | 12-23-2010 |
Atsushi Ookouchi, Koshi City JP
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20100291490 | Resist pattern slimming treatment method - A resist pattern slimming treatment method includes: a slimming treatment step of performing a slimming treatment on a resist pattern by applying a solution containing an acid onto a substrate having the resist pattern formed thereon, then performing a heat treatment, and then performing a developing treatment. A database storing kinds of resist material for the resist pattern, concentrations of acid contained in a solution to be applied onto the substrate having the resist pattern formed thereon, and line widths of the resist pattern corresponding to the kinds of resist material and the concentrations of acid is prepared in advance. The concentration of the acid contained in the solution used in the slimming treatment step is based on a concentration of the acid obtained from the database, using, as search keys, the kind of resist material and a target value of the line width of the resist pattern. | 11-18-2010 |
20100291491 | Resist pattern slimming treatment method - A resist pattern slimming treatment method of performing a slimming treatment on a resist pattern formed on a substrate includes: a slimming treatment step of performing a slimming treatment on the resist pattern by applying a reactant solubilizing the resist pattern onto the resist pattern, then performing a heat treatment on the resist pattern under a heat treatment condition determined in advance, and then performing a developing treatment on the resist pattern; and a first line width measurement step of measuring a line width of the resist pattern before the slimming treatment step. The heat treatment condition is determined based on a measurement value of the line width measured in the first line width measurement step. | 11-18-2010 |
20120014689 | SUBSTRATE CLEANING APPARATUS, COATING AND DEVELOPING APPARATUS HAVING THE SAME AND SUBSTRATE CLEANING METHOD - A substrate cleaning apparatus includes a substrate holding and rotating unit for holding a center of a rear surface of a substrate and rotating the substrate; a cleaning unit including a first cleaning member, a second cleaning member provided around the first cleaning member and a base to which the first and second cleaning members are secured; an elevating unit for moving the substrate holding and rotating unit and the cleaning unit relative to each other so as to allow the first and second cleaning members to come into contact with the rear surface of the substrate held by the substrate holding and rotating unit; and a driving unit for driving the substrate and the cleaning unit relative to each other in a direction along the rear surface of the substrate so as to allow part of the second cleaning member to be exposed to the outside of the substrate. | 01-19-2012 |
20140352737 | SUBSTRATE CLEANING APPARATUS, SUBSTRATE CLEANING METHOD AND NON-TRANSITORY STORAGE MEDIUM - A cleaning liquid and a gas are discharged in sequence to a central portion of a substrate while the substrate is being rotated, and after nozzles that discharge them are moved to a peripheral edge side of the substrate, discharge of the cleaning liquid is switched to a second cleaning liquid nozzle set at a position deviated from a movement locus of the first cleaning liquid nozzle. Both of the nozzles are moved toward the peripheral edge side of the substrate while discharging the cleaning liquid and discharging the gas so that a difference between a distance from the discharge position of the second cleaning liquid nozzle to the central portion of the substrate and a distance from the discharge position of the gas nozzle to the central portion of the substrate gradually decreases. | 12-04-2014 |
Atsushi Ookouchi, Kumamoto JP
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20110014379 | DEVELOPING APPARATUS, RESIST PATTERN FORMING METHOD AND STORAGE MEDIUM - Provided is a developing apparatus configured to slim the resist pattern while reducing the number of developing modules. A room temperature developing liquid and a high temperature developing liquid to modify the surface layer of a resist pattern can be supplied from a common nozzle to a substrate disposed on a mount table. Although both developing liquids may be sequentially discharged by switching between the supply line for the room temperature developing liquid and the supply line for the high temperature developing liquid, it is also possible to join these supply lines for supplying the room temperature developing liquid from the former supply line, and then adjust the ratio of the flow rates between both supply lines, and then supply the mixed liquid of the developing liquids as a high temperature developing liquid. | 01-20-2011 |
Junya Ookouchi, Tokyo JP
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20140249417 | ULTRASOUND DIAGNOSTIC DEVICE AND ULTRASOUND DIAGNOSTIC DEVICE CONTROL METHOD - An ultrasound diagnostic device to which an ultrasound probe is connectable, measuring an IMT of a vascular wall in a carotid artery, including: a transmission unit supplying a transmission signal to the probe for causing ultrasound transmission along a longitudinal cross-section of the carotid artery; a reception unit receiving a signal based on a reflected ultrasound received by the probe, and generating a reception signal; a vascular feature calculation unit extracting position information from the reception signal, including at least one of: piece positions for vascular wall pieces; and a relative relationship between piece positions, and detecting a boundary between a CCA and a CCA bulb according to variation in the position information with respect to the longitudinal direction of the carotid artery; a ROI determination unit determining a ROI defining an IMT measurement range with respect to the boundary; and an IMT measurement unit measuring the IMT. | 09-04-2014 |
Kakeru Ookouchi, Nihonmatsu JP
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20100181733 | ROLLBACK SEAL - A rollback seal, which is used in a space between a piston and a housing of a hydraulic brake configured to brake a wheel by clamping a disc rotor fixedly attached to the wheel, is arranged in an annular groove of the housing, has a substantially rectangular sectional shape, has an annular recess formed in one end face thereof at the side where hydraulic pressure acts on the piston, and has a chamfered section formed at a piston side corner of the other end face thereof at the opposite side to that where the recess is formed, thereby to reduce total weight of brake system, secure sufficient amount of rollback at low temperature, and reliably return a piston from brake position to release position with improved sealing characteristics over a longer service life. | 07-22-2010 |
Norihiko Ookouchi, Tokyo JP
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20140193302 | BASE MATERIAL COMPRISING HYDROPHILIC LAYER - This invention provides a base material comprising a plastic-containing support and, on its surface, a hydrophilic layer comprising an ethylene glycol chain (an EG chain) composed of one or more ethylene glycol units, as well as a method for producing such base material. A polysiloxane-containing primer layer is provided on the support comprising a plastic material on its surface, and the EG chain is covalently bound to a polysiloxane side chain of the primer layer. Thus, a hydrophilic layer comprising the EG chain can be provided on the surface of the plastic-containing support. | 07-10-2014 |
Yasuyuki Ookouchi, Toyota-Shi JP
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20130216842 | METHOD OF BONDING CERAMIC AND METAL AND BONDED STRUCTURE OF CERAMIC AND METAL - The present invention provides a method of bonding ceramic and metal comprising the steps of bonding metal foils to a bonding surface of a ceramic matrix and a bonding surface of a metal matrix to be bonded and then heating so as to leave metal layers at the surfaces of the metal foils while forming diffusion layers with inclined linear expansion coefficients with materials of the metal foils diffused in them between the ceramic matrix and metal layer and between the metal matrix and metal layer, and making the respective metal layers which remain at the surfaces of the metal foils bond so as to bond the ceramic matrix and the metal matrix. | 08-22-2013 |
20140290852 | METHOD FOR PRODUCING BONDED BODY - A method for producing a bonded body of ceramic and metal bodies includes stacking a ceramic body, metal body, gap layer capable of preventing oxidation and hindering heat conduction, first intermediate layer and second intermediate layer with the gap layer between the ceramic body and the metal body in the stacking direction. The first intermediate layer is between the ceramic body and gap layer, and the second intermediate layer is between the gap layer and metal body, linear expansion coefficients of the first and second intermediate layers being between those of the ceramic body and the metal body. Diffusion bonding is performed between the ceramic body and the first intermediate layer, and between the metal body and the second intermediate layer simultaneously. The gap layer is then removed from between the first and second intermediate layers. The first and second intermediate layers are then bonded to each other. | 10-02-2014 |
20150083316 | METHOD OF MANUFACTURING JOINT BODY OF CONDUCTIVE CERAMIC BODY AND METAL BODY - A method of manufacturing a joint body of a ceramic body and a metal body includes a step of joining them together by passing a current to an abutment surface between them. The joining step includes a step of heating up the abutment surface to a temperature T1 within a temperature range between (Tr-220)° C. and (Tr-50)° C. in a period longer than 10 seconds, Tr being a recrystallization temperature of the metal body, a step of heating the abutment surface for a period longer than 5 seconds at a temperature T2 within a temperature range between Tm×0.3° C. and Tm×0.45° C., Tm being a melting point of the metal body, and a step of heating the abutment surface for a period longer than 3 seconds at a heating temperature higher than Tm×0.48° C. and lower than Tm×0.6° C. | 03-26-2015 |