Inventors list |
Assignees list |
Classification tree browser |
Top 100 Inventors |
Top 100 Assignees |
Ooizumi, JP
Haruo Ooizumi, Amagasaki-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100247048 | OPTICAL FIBER AND METHOD FOR FABRICATING THE SAME - An optical fiber includes: a core ( | 09-30-2010 |
Haruo Ooizumi, Hyogo JP
| Patent application number | Description | Published |
|---|---|---|
| 20100310212 | OPTICAL CONNECTOR STRUCTURE - An optical connector structure (C) includes: an optical fiber ( | 12-09-2010 |
| 20110002590 | GRADED INDEX MULTIMODE OPTICAL FIBER - A graded index multimode optical fiber ( | 01-06-2011 |
Junichi Ooizumi, Kanagawa JP
| Patent application number | Description | Published |
|---|---|---|
| 20100096009 | POROUS SILICA, OPTICAL-PURPOSE LAYERED PRODUCT AND COMPOSITION, AND METHOD FOR PRODUCING POROUS SILICA - There is provided porous silica having a low refractive index and being stable when exposed to water. | 04-22-2010 |
Jyunichi Ooizumi, Kasumigaura JP
| Patent application number | Description | Published |
|---|---|---|
| 20090229954 | SPECIMEN TRANSPORT SYSTEM - An object of the present invention is to provide a specimen transport system that can easily be installed without requiring much time and regardless of various transport distances and also is inexpensive. In the present invention, the distance between apparatuses, which had been difficult to be met by a specimen transport line when a specimen transport system is built, can easily be met by providing a structure in which a conveyor belt is formed in an endless loop and the shape of the loop of the conveyor belt is changed according to the length of a rack transport surface (rack transport surface length), and flexibility for apparatus and system installation and space efficiency can be enhanced, enabling substantial reduction of time and costs in building a specimen transport system. | 09-17-2009 |
Shinichi Ooizumi, Osaka JP
| Patent application number | Description | Published |
|---|---|---|
| 20100227223 | METHOD FOR PRODUCTION OF POROUS FILM, POROUS FILM, SEPARATOR FOR NON-AQUEOUS ELECTROLYTE BATTERY, AND NON-AQUEOUS ELECTROLYTE BATTERY USING THE SEPARATOR - The method for producing a porous film of the present invention includes producing a stretched film by stretching a resin sheet containing at least polyolefin, and then irradiating the stretched film with a vacuum ultraviolet ray. The separator for a non-aqueous electrolyte battery of the present invention is composed of the porous film obtained by the production method of the present invention. The non-aqueous electrolyte battery of the present invention is provided with the separator for a non-aqueous electrolyte battery of the present invention. | 09-09-2010 |
Yoshifumi Ooizumi, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20100255420 | RADIATION SENSITIVE RESIN COMPOSITION AND POLYMER - A radiation-sensitive resin composition includes a polymer, an acid-labile group-containing resin, a radiation-sensitive acid generator, and a solvent, the polymer including repeating units shown by following general formulas (1) and (2). | 10-07-2010 |
Yoshitsugu Ooizumi, Miyagi JP
| Patent application number | Description | Published |
|---|---|---|
| 20080240190 | METHOD OF MANUFACTURING SEMICONDUCTOR LASER, SEMICONDUCTOR LASER, OPTICAL PICKUP, OPTICAL DISK DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF GROWING NITRIDE TYPE GROUP III-V COMPOUND SEMICONDUCTOR LAYER - A method of manufacturing a semiconductor laser having an end face window structure, by growing over a substrate a nitride type Group III-V compound semiconductor layer including an active layer including a nitride type Group III-V compound semiconductor containing at least In and Ga, the method includes the steps of: forming a mask including an insulating film over the substrate, at least in the vicinity of the position of forming the end face window structure; and growing the nitride type Group III-V compound semiconductor layer including the active layer over a part, not covered with the mask, of the substrate. | 10-02-2008 |