Patent application number | Description | Published |
20090111897 | REVERSIBLE BIOGEL FOR MANIPULATION AND SEPARATION OF SINGLE-WALLED CARBON NANOTUBES - The invention provides the use of novel, binary guanosine gels for simple, rapid and nondestructive solubilization of individual single walled carbon nanotubes (SWNTs) at high concentrations. The gels exhibit selectivity between metallic and semiconducting SWNTs and, further, among SWNTs with different chiralities. | 04-30-2009 |
20090199768 | MAGNETIC DOMAIN PATTERNING USING PLASMA ION IMPLANTATION - A method for defining magnetic domains in a magnetic thin film on a substrate, includes: coating the magnetic thin film with a resist; patterning the resist, wherein areas of the magnetic thin film are substantially uncovered; and exposing the magnetic thin film to a plasma, wherein plasma ions penetrate the substantially uncovered areas of the magnetic thin film, rendering the substantially uncovered areas non-magnetic. A tool for this process comprises: a vacuum chamber held at earth potential; a gas inlet valve configured to leak controlled amounts of gas into the chamber; a disk mounting device configured to (1) fit within the chamber, (2) hold a multiplicity of disks, spacing the multiplicity of disks wherein both sides of each of the multiplicity of disks is exposed and (3) make electrical contact to the multiplicity of disks; and a radio frequency signal generator electrically coupled to the disk mounting device and the chamber, whereby a plasma can be ignited in the chamber and the disks are exposed to plasma ions uniformly on both sides. | 08-13-2009 |
20090201722 | METHOD INCLUDING MAGNETIC DOMAIN PATTERNING USING PLASMA ION IMPLANTATION FOR MRAM FABRICATION - A method for defining magnetic domains in a magnetic thin film on a substrate, includes: coating the magnetic thin film with a resist; patterning the resist, wherein areas of the magnetic thin film are substantially uncovered; and exposing the magnetic thin film to a plasma, wherein plasma ions penetrate the substantially uncovered areas of the magnetic thin film, rendering the substantially uncovered areas non-magnetic. A tool for this process comprises: a vacuum chamber held at earth potential; a gas inlet valve configured to leak controlled amounts of gas into the chamber; a disk mounting device configured to (1) fit within the chamber, (2) hold a multiplicity of disks, spacing the multiplicity of disks wherein both sides of each of the multiplicity of disks is exposed and (3) make electrical contact to the multiplicity of disks; and a radio frequency signal generator electrically coupled to the disk mounting device and the chamber, whereby a plasma can be ignited in the chamber and the disks are exposed to plasma ions uniformly on both sides. This process may be used to fabricate memory devices, including magnetoresistive random access memory devices. | 08-13-2009 |
20090320819 | CARBON NANOTUBE FIBER WIRE FOR WAFER SLICING - A wire saw for cutting hard materials includes a carbon nanotube fiber wire spun from carbon nanotubes. The carbon nanotube fiber wire may be made from a plurality of fibers, each fiber being spun from carbon nanotubes, the fibers being twisted together to form the wire. Furthermore, the wire may also include diamond particles, silicon carbide particles and/or extra carbon nanotubes to enhance the abrasive properties of the wire. A method is provided for slicing a silicon boule including: linearly translating a carbon nanotube fiber wire between rotating drums while maintaining the wire under tension; using a fixture, moving the silicon boule onto the moving tensioned wire, whereby the wire cuts into the silicon; delivering lubricating fluid to the surface of the silicon where contact is made with the wire; and collecting the lubricating fluid after it leaves the surface of the silicon. | 12-31-2009 |
20100050779 | CARBON NANOTUBE-BASED LOAD CELLS - A robust, stand-alone load cell comprises a block of aligned carbon nanotubes with parallel electrodes on opposing sides of the block and an electrical circuit connected between the electrodes for measuring the electrical resistance of the block. The nanotubes are preferably aligned perpendicular to the electrodes. Carbon nanotube-based load cells may be incorporated into a wafer asssembly for characterizing semiconductor processing equipment. Such a wafer assembly includes two parallel wafers with a plurality of carbon nanotube load cells positioned between and attached to both wafers. The load cells are independently electrically connected to a device which monitors and records the resistivity of the load cell. According to further aspects of the invention, each of the load cell's parallel electrodes may be comprised of many small electrodes, where each small electrode on one side of the block has a corresponding small electrode on the opposing side of the block; corresponding pairs of small electrodes are connected in series to form a chain; an electrical circuit, connected to both ends of the chain of opposing pairs of electrodes, is used to measure the electrical resistance of the chain. | 03-04-2010 |
20100051843 | CARBON NANOTUBE-BASED GAS VALVE - Precise control over gas delivery is achieved at the micro and nanobar mass levels by incorporating blocks of aligned carbon nanotubes into valves and finely adjusting the flow through the block by controlling a compressing force applied to the block. A valve for controlling gas flow includes: a valve housing; a block of aligned carbon nanotubes, the block and the valve housing being configured to direct the gas through the carbon nanotubes in the block; and a device configured to apply a force to the block in order to compress the block, wherein the block is compressed perpendicular to the walls of the carbon nanotubes in the block; whereby the application of the force to the walls restricts the flow of the gas through the valve. The valve may further comprise an electrical device for monitoring the electrical properties of the carbon nanotube block. This monitoring provides information on the state of compression of the carbon nanotube block and/or the gas that is flowing through the valve. | 03-04-2010 |
20100075060 | PROCESS TOOL INCLUDING PLASMA SPRAY FOR CARBON NANOTUBE GROWTH - This invention provides a high volume manufacturing compatible process tool and method for integrating deposition of carbon nanotubes into device fabrication. A linear process tool for growing carbon nanotubes comprises a linear conveyor for moving a substrate through the linear process tool and a micro-plasma process unit including a plurality of micro-plasma spray guns arranged in an array, the micro-plasma process unit being positioned above the linear conveyor and configured to deposit material on the surface of the substrate as the substrate passes under the micro-plasma process unit on the linear conveyor. The micro-plasma process unit may include a first array of micro-plasma spray guns for depositing a catalyst material and a second array of micro-plasma spray guns for depositing the carbon nanotubes. A method of depositing carbon nanotubes on a substrate comprises: supplying a first precursor for a catalyst material to a first array of micro-plasma spray guns; creating a first plasma using the first array of micro-plasma spray guns and the first precursor; moving the substrate through the first plasma; activating the catalyst material; supplying a second precursor for the carbon nanotubes to a second array of micro-plasma spray guns; creating a second plasma using the second array of micro-plasma spray guns and the second precursor; moving the substrate through the second plasma. | 03-25-2010 |
20100096256 | PATTERNING OF MAGNETIC THIN FILM USING ENERGIZED IONS AND THERMAL EXCITATION - A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portion of the magnetic thin film is subjected to thermal excitation. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed. | 04-22-2010 |
20100098873 | PATTERNING OF MAGNETIC THIN FILM USING ENERGIZED IONS - A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed. | 04-22-2010 |
20100101829 | MAGNETIC NANOWIRES FOR TCO REPLACEMENT - This invention provides an optically transparent conductive layer with a desirable combination of low electrical sheet resistance and good optical transparency. The conductive layer comprises a multiplicity of magnetic nanowires in a plane, the nanowires being aligned roughly (1) parallel to each other and (2) with the long axes of the nanowires in the plane of the layer, the nanowires further being configured to provide a plurality of continuous conductive pathways, and wherein the density of the multiplicity of magnetic nanowires allows for substantial optical transparency of the conductive layer. Furthermore, the conductive layer can include an optically transparent continuous conductive film, wherein the multiplicity of magnetic nanowires are electrically connected to the continuous conductive film. A method of forming the conductive layer on a substrate includes: depositing a multiplicity of magnetic conductive nanowires on the substrate and applying a magnetic field to form the nanowires into a plurality of conductive pathways parallel to the surface of the substrate. | 04-29-2010 |
20100101830 | MAGNETIC NANOPARTICLES FOR TCO REPLACEMENT - This invention provides an optically transparent conductive layer with a desirable combination of low electrical sheet resistance and good optical transparency. The conductive layer comprises a multiplicity of magnetic nanoparticles in a plane, the nanoparticles being aligned in strings, the strings being roughly parallel to each other and configured to provide a plurality of continuous conductive pathways, and wherein the density of the multiplicity of magnetic nanoparticles allows for substantial optical transparency of the conductive layer. Furthermore, the conductive layer can include an optically transparent continuous conductive film, wherein the multiplicity of magnetic nanoparticles are electrically connected to the continuous conductive film. A method of forming the conductive layer on a substrate includes: depositing a multiplicity of magnetic conductive nanoparticles on the substrate and applying a magnetic field to form the nanoparticles into a plurality of conductive pathways parallel to the surface of the substrate. | 04-29-2010 |
20100101832 | COMPOUND MAGNETIC NANOWIRES FOR TCO REPLACEMENT - This invention provides an optically transparent electrically conductive layer with a desirable combination of low electrical sheet resistance and good optical transparency. The conductive layer comprises a multiplicity of compound magnetic nanowires in a plane, the compound nanowires being aligned roughly (1) parallel to each other and (2) with the long axes of the compound nanowires in the plane of the layer, the compound nanowires further being configured to provide a plurality of continuous conductive pathways, and wherein the density of the multiplicity of compound magnetic nanowires allows for substantial optical transparency of the conductive layer. A compound magnetic nanowire may comprise a silver nanowire covered by a layer of magnetic metal such as nickel or cobalt. Furthermore, a compound magnetic nanowire may comprise a carbon nanotubes (CNT) attached to a magnetic metal nanowire. A method of forming the conductive layer on a substrate includes: depositing a multiplicity of compound magnetic conductive nanowires on the substrate and applying a magnetic field to form the compound nanowires into a plurality of conductive pathways parallel to the surface of the substrate. | 04-29-2010 |
20100175755 | COPPER DELAFOSSITE TRANSPARENT P-TYPE SEMICONDUCTOR THIN FILM DEVICES - Methods for fabrication of copper delafossite materials include a low temperature sol-gel process for synthesizing CuBO | 07-15-2010 |
20100221606 | ENERGY STORAGE DEVICE WITH POROUS ELECTRODE - A method of fabricating an energy storage device with a large surface area electrode comprises: providing an electrically conductive substrate; depositing a semiconductor layer on the electrically conductive substrate, the semiconductor layer being a first electrode; anodizing the semiconductor layer, wherein the anodization forms pores in the semiconductor layer, increasing the surface area of the first electrode; after the anodization, providing an electrolyte and a second electrode to form the energy storage device. The substrate may be a continuous film and the electrode of the energy storage device may be fabricated using linear processing tools. The semiconductor may be silicon and the deposition tool may be a thermal spray tool. Furthermore, the semiconductor layer may be amorphous. The energy storage device may be rolled into a cylindrical shape. The energy storage device may be a battery, a capacitor or an ultracapacitor. | 09-02-2010 |
20100249250 | REVERSIBLE BIOGEL FOR MANIPULATION AND SEPARATION OF SINGLE-WALLED CARBON NANOTUBES - The invention provides the use of novel, binary guanosine gels for simple, rapid and nondestructive solubilization of individual single walled carbon nanotubes (SWNTs) at high concentrations. The gels exhibit selectivity between metallic and semiconducting SWNTs and, further, among SWNTs with different chiralities. | 09-30-2010 |
20100252108 | COPPER DELAFOSSITE TRANSPARENT P-TYPE SEMICONDUCTOR MATERIALS FOR DYE SENSITIZED SOLAR CELLS - Methods for fabrication of copper delafossite materials include a low temperature sol-gel process for synthesizing CuBO | 10-07-2010 |
20100261049 | high power, high energy and large area energy storage devices - A readily manufacturable, high power, high energy, large area energy storage device is described. The energy storage device may use processes compatible with large area processing tools, such as large area coating systems and linear processing systems compatible with flexible thin film substrates. The energy storage devices may include batteries, super-capacitors and ultra-capacitors. An energy storage device may include a multiplicity of thin film cells formed on a single substrate, the multiplicity of cells being electrically connected in series, each one of the multiplicity of cells comprising: a current collector on the surface of the substrate; a first electrode on the current collector; a second electrode over the first electrode; and an electrolyte layer between the first electrode and the second electrode. Furthermore, an energy storage device may include a plurality of thin film cells formed on a single substrate, the plurality of cells being electrically connected in a network, the network including both parallel and serial electrical connections between individual cells of the plurality of cells. | 10-14-2010 |
20100313951 | CARBON NANOTUBE-BASED SOLAR CELLS - Solar cells are provided with carbon nanotubes (CNTs) which are used: to define a micron/sub-micron geometry of the solar cells; and/or as charge transporters for efficiently removing charge carriers from the absorber layer to reduce the rate of electron-hole recombination in the absorber layer. A solar cell may comprise: a substrate; a multiplicity of areas of metal catalyst on the surface of the substrate; a multiplicity of carbon nanotube bundles formed on the multiplicity of areas of metal catalyst, each bundle including carbon nanotubes aligned roughly perpendicular to the surface of the substrate; and a photoactive solar cell layer formed over the carbon nanotube bundles and exposed surfaces of the substrate, wherein the photoactive solar cell layer is continuous over the carbon nanotube bundles and the exposed surfaces of the substrate. The photoactive solar cell layer may be comprised of amorphous silicon p/i/n thin films; although, concepts of the present invention are also applicable to solar cells with absorber layers of microcrystalline silicon, SiGe, carbon doped microcrystalline silicon, CIS, CIGS, CISSe and various p-type II-VI binary compounds and ternary and quaternary compounds. | 12-16-2010 |
20110045349 | 3D APPROACH ON BATTERY AND SUPERCAPACITOR FABRICATION BY INITIATION CHEMICAL VAPOR DEPOSITION TECHNIQUES - Methods and apparatus for forming energy storage devices are provided. In one embodiment a method of producing an energy storage device is provided. The method comprises positioning an anodic current collector into a processing region, depositing one or more three-dimensional electrodes separated by a finite distance on a surface of the anodic current collector such that portions of the surface of the anodic current collector remain exposed, depositing a conformal polymeric layer over the anodic current collector and the one or more three-dimensional electrodes using iCVD techniques comprising flowing a gaseous monomer into the processing region, flowing a gaseous initiator into the processing region through a heated filament to form a reactive gas mixture of the gaseous monomer and the gaseous initiator, wherein the heated filament is heated to a temperature between about 300° C. and about 600° C., and depositing a conformal layer of cathodic material over the conformal polymeric layer. | 02-24-2011 |
20110051322 | POROUS AMORPHOUS SILICON-CARBON NANOTUBE COMPOSITE BASED ELECTRODES FOR BATTERY APPLICATIONS - Embodiments of the present invention generally relate to methods and apparatus for forming an energy storage device. More particularly, embodiments described herein relate to methods of forming electric batteries and electrochemical capacitors. In one embodiment a method of forming a high surface area electrode for use in an energy storage device is provided. The method comprises forming an amorphous silicon layer on a current collector having a conductive surface, immersing the amorphous silicon layer in an electrolytic solution to form a series of interconnected pores in the amorphous silicon layer, and forming carbon nanotubes within the series of interconnected pores of the amorphous silicon layer. | 03-03-2011 |
20110100955 | APPARATUS AND METHODS FOR FORMING ENERGY STORAGE AND PHOTOVOLTAIC DEVICES IN A LINEAR SYSTEM - A method and apparatus are provided for formation of a composite material on a substrate. The composite material includes carbon nanotubes and/or nanofibers, and composite intrinsic and doped silicon structures. In one embodiment, the substrates are in the form of an elongated sheet or web of material, and the apparatus includes supply and take-up rolls to support the web prior to and after formation of the composite materials. The web is guided through various processing chambers to form the composite materials. In another embodiment, the large scale substrates comprise discrete substrates. The discrete substrates are supported on a conveyor system or, alternatively, are handled by robots that route the substrates through the processing chambers to form the composite materials on the substrates. The composite materials are useful in the formation of energy storage devices and/or photovoltaic devices. | 05-05-2011 |
20110126402 | METHODS OF AND FACTORIES FOR THIN-FILM BATTERY MANUFACTURING - Methods of and factories for thin-film battery manufacturing are described. A method includes operations for fabricating a thin-film battery. A factory includes one or more tool sets for fabricating a thin-film battery. | 06-02-2011 |
20110315186 | Method of manufacturing thin crystalline silicon solar cells using recrystallization - Embodiments of the invention provide a thin single crystalline silicon film solar cell and methods of forming the same. The method includes forming a thin single crystalline silicon layer on a silicon growth substrate, followed by forming front or rear solar cell structures on and/or in the thin single crystalline silicon film. The method also includes attaching the thin single crystalline silicon film to a mechanical carrier and then separating the growth substrate from the thin single crystalline silicon film along a cleavage plane formed between the growth substrate and the thin single crystalline silicon film. Front or rear solar cell structures are then formed on and/or in the thin single crystalline silicon film opposite the mechanical carrier to complete formation of the solar cell. | 12-29-2011 |
20120080092 | HIGH EFFICIENCY SOLAR CELL DEVICE WITH GALLIUM ARSENIDE ABSORBER LAYER - Embodiments of the invention provide a method of forming a doped gallium arsenide based (GaAs) layer from a solution based precursor. The doped gallium arsenide based (GaAs) layer formed from the solution based precursor may assist solar cell devices to improve light absorption and conversion efficiency. In one embodiment, a method of forming a solar cell device includes forming a first layer with a first type of dopants doped therein over a surface of a substrate, forming a GaAs based layer on the first layer, and forming a second layer with a second type of dopants doped therein on the GaAs based layer. | 04-05-2012 |
20120156819 | GALLIUM NITRIDE-BASED LED FABRICATION WITH PVD-FORMED ALUMINUM NITRIDE BUFFER LAYER - Fabrication of gallium nitride-based light emitting diodes (LEDs) with physical vapor deposition (PVD) formed aluminum nitride buffer layers is described. | 06-21-2012 |
20120218621 | MATERIALS AND DEVICE STACK FOR MARKET VIABLE ELECTROCHROMIC DEVICES - The present invention generally relates to electrochromic (EC) devices, such as used in electrochromic windows (ECWs), and their manufacture. The EC devices may comprise a transparent substrate; a first transparent conductive layer; a doped coloration layer, wherein the coloration layer dopants provide structural stability to the arrangement of atoms in the coloration layer; an electrolyte layer; a doped anode layer over said electrolyte layer, wherein the anode layer dopant provides increased electrically conductivity in the doped anode layer; and a second transparent conductive layer. A method of fabricating an electrochromic device may comprise depositing on a substrate, in sequence, a first transparent conductive layer, a doped coloration layer, an electrolyte layer, a doped anode layer, and a second transparent conductive layer, wherein at least one of the doped coloration layer, the electrolyte layer and the doped anode layer is sputter deposited using a combinatorial plasma deposition process. | 08-30-2012 |
20120312474 | METHODS OF AND HYBRID FACTORIES FOR THIN-FILM BATTERY MANUFACTURING - Methods of and hybrid factories for thin-film battery manufacturing are described. A method includes operations for fabricating a thin-film battery. A hybrid factory includes one or more tool sets for fabricating a thin-film battery. | 12-13-2012 |
20120318773 | METHODS AND APPARATUS FOR CONTROLLING PHOTORESIST LINE WIDTH ROUGHNESS WITH ENHANCED ELECTRON SPIN CONTROL - The present invention provides methods and an apparatus for controlling and modifying line width roughness (LWR) of a photoresist layer with enhanced electron spinning control. In one embodiment, an apparatus for controlling a line width roughness of a photoresist layer disposed on a substrate includes a processing chamber having a chamber body having a top wall, side wall and a bottom wall defining an interior processing region, a support pedestal disposed in the interior processing region of the processing chamber, and a plasma generator source disposed in the processing chamber operable to provide predominantly an electron beam source to the interior processing region. | 12-20-2012 |
20120322011 | METHODS AND APPARATUS FOR PERFORMING MULTIPLE PHOTORESIST LAYER DEVELOPMENT AND ETCHING PROCESSES - The present invention provides methods and an apparatus controlling and minimizing process defects in a development process, and modifying line width roughness (LWR) of a photoresist layer after the development process, and maintaining good profile control during subsequent etching processes. In one embodiment, a method for forming features on a substrate includes developing and removing exposed areas in the photosensitive layer disposed on the substrate in the electron processing chamber by predominantly using electrons, removing contaminants from the substrate by predominantly using electrons, and etching the non-photosensitive polymer layer exposed by the developed photosensitive layer in the electron processing chamber by predominantly using electrons. | 12-20-2012 |
20130074771 | APPARATUS FOR FORMING ENERGY STORAGE AND PHOTOVOLTAIC DEVICES IN A LINEAR SYSTEM - A method and apparatus are provided for formation of a composite material on a substrate. The composite material includes carbon nanotubes and/or nanofibers, and composite intrinsic and doped silicon structures. In one embodiment, the substrates are in the form of an elongated sheet or web of material, and the apparatus includes supply and take-up rolls to support the web prior to and after formation of the composite materials. The web is guided through various processing chambers to form the composite materials. In another embodiment, the large scale substrates comprise discrete substrates. The discrete substrates are supported on a conveyor system or, alternatively, are handled by robots that route the substrates through the processing chambers to form the composite materials on the substrates. The composite materials are useful in the formation of energy storage devices and/or photovoltaic devices. | 03-28-2013 |
20130174781 | GALLIUM NITRIDE-BASED LED FABRICATION WITH PVD-FORMED ALUMINUM NITRIDE BUFFER LAYER - Fabrication of gallium nitride-based light emitting diodes (LEDs) with physical vapor deposition (PVD) formed aluminum nitride buffer layers is described. | 07-11-2013 |
20130224665 | ATOMIC LAYER DEPOSITION LITHOGRAPHY - Methods and apparatus for performing an atomic layer deposition lithography process are provided in the present disclosure. In one embodiment, a method for forming features on a material layer in a device includes pulsing a first reactant gas mixture to a surface of a substrate disposed in a processing chamber to form a first monolayer of a material layer on the substrate surface, directing an energetic radiation to treat a first region of the first monolayer, and pulsing a second reactant gas mixture to the substrate surface to selectively form a second monolayer on a second region of the first monolayer. | 08-29-2013 |
20130255076 | METHODS OF AND FACTORIES FOR THIN-FILM BATTERY MANUFACTURING - Methods of and factories for thin-film battery manufacturing are described. A method includes operations for fabricating a thin-film battery. A factory includes one or more tool sets for fabricating a thin-film battery. | 10-03-2013 |
20130285065 | PVD BUFFER LAYERS FOR LED FABRICATION - Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma. | 10-31-2013 |
20140017518 | PATTERNING OF MAGNETIC THIN FILM USING ENERGIZED IONS - A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed. | 01-16-2014 |
20140045103 | METHODS FOR CONTROLLING DEFECTS FOR EXTREME ULTRAVIOLET LITHOGRAPHY (EUVL) PHOTOMASK SUBSTRATE - Methods for providing a silicon layer on a photomask substrate surface with minimum defeats for fabricating film stack thereon for EUVL applications are provided. In one embodiment, a method for forming a silicon layer on a photomask substrate includes performing an oxidation process to form a silicon oxide layer on a surface of a first substrate wherein the first substrate comprises a crystalline silicon material, performing an ion implantation process to define a cleavage plane in the first substrate, and bonding the silicon oxide layer to a surface of a second substrate, wherein the second substrate is a quartz photomask. | 02-13-2014 |
20140072876 | POROUS AMORPHOUS SILICON-CARBON NANOTUBE COMPOSITE BASED ELECTRODES FOR BATTERY APPLICATIONS - Embodiments of the present invention generally relate to methods and apparatus for forming an energy storage device. More particularly, embodiments described herein relate to methods of forming electric batteries and electrochemical capacitors. In one embodiment a method of forming a high surface area electrode for use in an energy storage device is provided. The method comprises forming an amorphous silicon layer on a current collector having a conductive surface, immersing the amorphous silicon layer in an electrolytic solution to form a series of interconnected pores in the amorphous silicon layer, and forming carbon nanotubes within the series of interconnected pores of the amorphous silicon layer. | 03-13-2014 |
20140083363 | PATTERNING OF MAGNETIC THIN FILM USING ENERGIZED IONS AND THERMAL EXCITATION - A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portion of the magnetic thin film is subjected to thermal excitation. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed. | 03-27-2014 |
20140178728 | ENERGY STORAGE DEVICE WITH POROUS ELECTRODE - A method of fabricating an energy storage device with a large surface area electrode comprises: providing an electrically conductive substrate; depositing a semiconductor layer on the electrically conductive substrate, the semiconductor layer being a first electrode; anodizing the semiconductor layer, wherein the anodization forms pores in the semiconductor layer, increasing the surface area of the first electrode; after the anodization, providing an electrolyte and a second electrode to form the energy storage device. The substrate may be a continuous film and the electrode of the energy storage device may be fabricated using linear processing tools. The semiconductor may be silicon and the deposition tool may be a thermal spray tool. Furthermore, the semiconductor layer may be amorphous. The energy storage device may be rolled into a cylindrical shape. The energy storage device may be a battery, a capacitor or an ultracapacitor. | 06-26-2014 |
20140342229 | POSITIVE ACTIVE MATERIAL FOR RECHARGEABLE LITHIUM BATTERY - Disclosed are a cathode active material for a lithium secondary battery, and a lithium secondary battery including the same. The disclosed cathode active material includes a core including a compound represented by Formula 1; and a shell including a compound represented by Formula 2, in which the core and the shell have different material compositions. | 11-20-2014 |
20140356768 | CHARGED BEAM PLASMA APPARATUS FOR PHOTOMASK MANUFACTURE APPLICATIONS - Embodiments of the present invention generally provide an apparatus and methods for etching photomasks using charged beam plasma. In one embodiment, an apparatus for performing a charged beam plasma process on a photomask includes a processing chamber having a chamber bottom, a chamber ceiling and chamber sidewalls defining an interior volume, a substrate support pedestal disposed in the interior volume, a charged beam generation system disposed adjacent to the chamber sidewall, and a RF bias electrode disposed in the substrate support. | 12-04-2014 |
20140370708 | PHOTORESIST TREATMENT METHOD BY LOW BOMBARDMENT PLASMA - Methods for reducing the line width roughness on a photoresist pattern are provided herein. In some embodiments, a method of processing a patterned photoresist layer disposed atop a substrate includes flowing a process gas into a processing volume of a process chamber having the substrate disposed therein; forming a plasma within the process chamber from the process gas, wherein the plasma has a ion energy of about 1 eV to about 10 eV; and etching the patterned photoresist layer with species from the plasma to at least one of smooth a line width roughness of a sidewall of the patterned photoresist layer or remove debris. | 12-18-2014 |
20140370709 | METHODS FOR REDUCING LINE WIDTH ROUGHNESS AND/OR CRITICAL DIMENSION NONUNIFORMITY IN A PATTERNED PHOTORESIST LAYER - Methods for reducing line width roughness and/or critical dimension nonuniformity in a photoresist pattern are provided herein. In some embodiments, a method of reducing line width roughness along a sidewall of a patterned photoresist layer disposed atop a substrate includes: (a) depositing a first layer atop the sidewall of the patterned photoresist layer; (b) etching the first layer and the sidewall after depositing the first layer to reduce the line width roughness of the patterned photoresist layer. In some embodiments, (a)-(b) may be repeated until the line width roughness is substantially smooth. | 12-18-2014 |