Patent application number | Description | Published |
20080251867 | Nanowire Magnetic Random Access Memory - An integrated array of non volatile magnetic memory devices, each having a first magnetic layer ( | 10-16-2008 |
20090267164 | METHOD OF MANUFACTURING A SEMICONDUCTOR SENSOR DEVICE AND SEMICONDUCTOR SENSOR DEVICE - The invention relates to a method of manufacturing a semiconductor sensor device ( | 10-29-2009 |
20100230821 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE OBTAINED WITH SUCH A METHOD - The invention relates to a method of manufacturing a semiconductor device ( | 09-16-2010 |
20100234209 | PARTICLE COMPRISING CORE AND SHELL AND APPLICATIONS THEREOF - The present invention relates to particles comprising a core and a shell, a method of producing said particle, various uses of said particle as well as various products comprising said particle. The particle according to the invention may be used as photocatalyst, as antibacterial agent, as cleaning agent, as anti-fogging agent and as decomposing agent. Furthermore the particle is applicable as solar cells. | 09-16-2010 |
20100261339 | SINGLE CRYSTAL GROWTH ON A MIS-MATCHED SUBSTRATE - A process for forming a single crystal layer of one material type such as III-V semiconductor) onto a substrate of a different material type such as silicon. A substrate of a first material type is provided. At least one discrete region of catalyst material is deposited onto the substrate, the discrete region defining a seed area of the substrate. A second material type such as III-V semiconductor is grown as a single crystal nanowire onto the substrate between the substrate and catalyst material, the nanowire of second material type extending upward from the substrate with lateral dimensions not substantially exceeding the seed area. After growth of the nanowire, growth conditions are changed so as to epitaxially grow the second material type laterally from the single crystal nanowire in a direction parallel to the substrate surface. | 10-14-2010 |
20100277040 | THIN FILM DETECTOR FOR PRESENCE DETECTION - A transducer ( | 11-04-2010 |
20110120843 | PIEZOELECTRIC BIMORPH SWITCH - The present invention relates to a piezoelectric bimorph switch, specifically a cantilever (single clamped beam) switch, which can be actively opened and closed. Piezoelectric bimorph switch are known from the prior art. Such a switch may be regarded as an actuator. Actuators are regarded as a subdivision of transducers. They are devices, which transform an input signal (mainly an electrical signal) into motion. Electrical motors, pneumatic actuators, hydraulic pistons, relays, comb drive, piezoelectric actuators, thermal bimorphs, Digital Micromirror Devices and electroactive polymers are some examples of such actuators. The switch of the invention comprises piezoelectric stack layers ( | 05-26-2011 |
20110147861 | MEMS SWITCH AND FABRICATION METHOD - A MEMS switch ( | 06-23-2011 |
20120167659 | PRESSURE SENSOR WITH PRESSURE-ACTUATED SWITCH - Various embodiments relate to a pressure sensor and related methods of manufacturing and use. A pressure sensor may include an electrical contact included in a flexible membrane that deflects in response to a measured ambient pressure. The electrical contact may be separated from a signal path through a cavity formed using a sacrificial layer and PVD plugs. At one or more defined touch-point pressure thresholds, the membrane of the pressure sensor may deflect so that the state of contact between an electrical contact and one or more sections of a signal path may change. In some embodiments, the change of state may cause the pressure sensor to trigger an alarm in the electrical circuit. Various embodiments also enable the operation of the electrical circuit for testing and calibration through the use of one or more actuation electrode layers. | 07-05-2012 |
20120286588 | MEMS SWITCHING CIRCUIT - A switching circuit employs MEMS devices. In connection with various example embodiments, signal switching circuit couples primary and secondary data link connectors having at least two channels and an electrode for each channel. A MEMS switch is coupled to each channel in of the secondary data link connectors, and includes a suspended membrane, first and second contact electrodes (one being in the membrane) and a biasing circuit that biases the membrane for moving the membrane between open and closed positions to contact the electrodes. A switch controller circuit selectively controls the application of an actuation voltage to each of the biasing circuits, thereby selectively actuating the membranes between the open and closed positions for routing signals between the primary and secondary data link connectors. | 11-15-2012 |
20120286846 | SWITCHING CIRCUIT - A switching circuit employs switches operating at low on resistance and high off capacitance. In connection with various example embodiments, a switching circuit selectively couples a communication port to one of two or more internal circuits based upon a type of input at the communication port. A sensor circuit senses the type of the input and, based upon the sensed input type, actuates one or more switches in the switching circuit. | 11-15-2012 |
20130118265 | MEMS CAPACITIVE PRESSURE SENSOR, OPERATING METHOD AND MANUFACTURING METHOD - A MEMS pressure sensor wherein at least one of the electrode arrangements comprises an inner electrode and an outer electrode arranged around the inner electrode. The capacitances associated with the inner electrode and the outer electrode are independently measured and can be differentially measured. This arrangement enables various different read out schemes to be implemented and also enables improved compensation for variations between devices or changes in device characteristics over time. | 05-16-2013 |
20130208572 | THIN FILM ULTRASOUND TRANSDUCER - The present invention relates to a transducer ( | 08-15-2013 |
20130233086 | MEMS CAPACITIVE PRESSURE SENSOR - A pressure sensor measures pressure by measuring the deflection of a MEMS membrane using a capacitive read-out method. There are two ways to implement the invention. One involves the use of an integrated Pirani sensor and the other involves the use of an integrated resonator, to function as a reference pressure sensor, for measuring an internal cavity pressure. | 09-12-2013 |
20140053651 | PRESSURE SENSOR - As may be consistent with one or more embodiments discussed herein, an integrated circuit apparatus includes a membrane suspended over a cavity, with the membrane and cavity defining a chamber. The membrane has a plurality of openings therein that pass gas into and out of the chamber. As the membrane is actuated, the volume of the chamber changes to generate a gas pressure inside the chamber that is different than a pressure outside the chamber. A sensor detects a frequency-based characteristic of the membrane responsive to the change in volume, and therein provides an indication of the gas pressure outside the chamber. | 02-27-2014 |
20140175528 | SEMICONDUCTOR MAGNETIC FIELD SENSORS - A semiconductor magnetic field sensor comprising a semiconductor well on top of a substrate layer is disclosed. The semiconductor well includes a first current collecting region and a second current collecting region and a current emitting region placed between the first current collecting region and the second current collecting region. The semiconductor well also includes a first MOS structure, having a first gate terminal, located between the first current collecting region and the current emitting region and a second MOS structure, having a second gate terminal, located between the current emitting region and the second current collecting region. In operation, the first gate terminal and the second gate terminal are biased for increasing a deflection length of a first current and of a second current. The deflection length is perpendicular to a plane defined by a surface of the semiconductor magnetic field sensor and parallel to a magnetic field. | 06-26-2014 |
20140366641 | FLOW SENSOR - Flow sensors for measuring the flow of an ion-containing fluid may be implemented using mechanical or electrical techniques. Mechanical flow sensors are have moving parts and therefore may be unreliable after some time and are expensive to manufacture. Hall-effect type flow sensors typically require a reversible magnetic field to compensate for electrochemical effects. A flow meter including such a sensor uses an electromagnet. A flow sensor ( | 12-18-2014 |