Patent application number | Description | Published |
20080230845 | SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A semiconductor device may include, but is not limited to, a single crystal silicon diffusion layer, a polycrystal silicon conductor, and a diffusion barrier layer. The diffusion barrier layer separates the polycrystal silicon conductor from the single crystal silicon diffusion layer. The diffusion barrier layer prevents a diffusion of at least one of silicon-interstitial and silicon-vacancy between the single crystal silicon diffusion layer and the polycrystal silicon conductor. | 09-25-2008 |
20090042380 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A gate dielectric film, a poly-silicon film, a film of a refractory metal such as tungsten, and a gate cap dielectric film are sequentially laminated on a semiconductor substrate. The gate cap dielectric film and the refractory metal film are selectively removed by etching. Thereafter, a double protection film including a silicon nitride film and a silicon oxide film is formed on side surfaces of the gate cap dielectric film, the refractory metal film, and the poly-silicon film. The poly-silicon film is etched using the double protection film as a mask. Thereafter, the semiconductor substrate is light oxidized to form a silicon oxide film on side surfaces of the poly-silicon film. Accordingly, a junction leakage of a MOSFET having a gate electrode of a poly-metal structure, particularly, a memory cell transistor of a DRAM, can be further reduced. | 02-12-2009 |
20120305999 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided are a semiconductor device capable of increasing an ON current with a reduced channel resistance, and also capable of stably and independently operating respective transistors, and a method of manufacturing the semiconductor device. A semiconductor device includes a fin portion located in a manner that a part of an active region protrudes from a bottom portion of a gate groove, a gate insulating film for covering the gate groove and a surface of the fin portion, a gate electrode which is embedded within a lower portion of the gate groove and formed so as to straddle the fin portion via the gate insulating film, a first diffusion region, a second diffusion region, and a carrier capture region provided in the surface of the fin portion. | 12-06-2012 |
20130181271 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device capable of increasing ON current while reducing channel resistance and allowing transistors to operate independently and stably, having a fin formed to protrude from the bottom of a gate electrode trench, a gate insulating film covering the surfaces of the gate electrode trench and the fin, a gate electrode embedded in a lower part of the gate electrode trench and formed to stride over the fin via the gate insulating film, a first impurity diffusion region arranged on a first side face, and a second impurity diffusion region arranged on a second side face. | 07-18-2013 |
20140167125 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device capable of increasing ON current while reducing channel resistance and allowing transistors to operate independently and stably, having a fin formed to protrude from the bottom of a gate electrode trench, a gate insulating film covering the surfaces of the gate electrode trench and the fin, a gate electrode embedded in a lower part of the gate electrode trench and formed to stride over the fin via the gate insulating film, a first impurity diffusion region arranged on a first side face, and a second impurity diffusion region arranged on a second side face. | 06-19-2014 |
Patent application number | Description | Published |
20110163512 | STEERING TIE ROD END MADE OF STEEL AND METHOD OF MANUFACTURING THE SAME - A steel tie rod end includes a shaft portion and first and second fitting portions. A minimum area portion having a small radially cross-sectional area is provided for the shaft portion, and 90% or above of a steel structure of the minimum area portion is formed of martensite or tempered martensite. The surface hardness of the minimum area portion and the average hardness of the radial cross section of the minimum area portion are 600 Hv or below, and the average hardness of the radial cross section of the first fitting portion and the average hardness of the radial cross section of the second fitting portion are 300 Hv or below. A method of manufacturing a steel tie rod end includes a quenching process of heating only a prospective shaft portion by high frequency to an austenitizing temperature and then rapidly cooling the prospective shaft portion by water or cooling medium. | 07-07-2011 |
20130133789 | STEEL WIRE OF SPECIAL STEEL AND WIRE ROD OF SPECIAL STEEL - A predetermined composition is had, when a C content is represented by (C %), in a case of (C %) being not less than 0.35% nor more than 0.65%, a volume fraction of pearlite is 64×(C %)+52% or more, and in a case of (C %) being greater than 0.65% and 0.85% or less, the volume fraction of pearlite is not less than 94% nor more than 100%, and a structure of the other portion is composed of one or two of proeutectoid ferrite and bainite. Further, in a region to a depth of 1.0 mm from a surface, a volume fraction of pearlite block having an aspect ratio of 2.0 or more is not less than 70% nor more than 95%, and a volume fraction of pearlite having an angle between an axial direction and a lamellar direction on a cross section parallel to the axial direction of 40° or less is 60% or more with respect to all pearlite. | 05-30-2013 |
20140290806 | WIRE MATERIAL FOR NON-HEAT TREATED COMPONENT, STEEL WIRE FOR NON-HEAT TREATED COMPONENT, AND NON-HEAT TREATED COMPONENT AND MANUFACTURING METHOD THEREOF - A wire material used for manufacturing a non-heat treated component whose tensile strength is 900 MPa to 1300 MPa, containing, in mass %: C: 0.20% to 0.50%, Si: 0.05% to 2.0%, Mn: 0.20% to 1.0%, being limited to contain P: 0.030% or less, S: 0.030% or less, N: 0.005% or less, F1 defined by the following expression (1) is less than 0.60, with the balance made up of Fe and inevitable impurities, wherein a metal structure contains a pearlite structure of 64×(C %)+52% or more in a volume fraction, with the balance made up of one kind or two kinds of a pro-eutectoid ferrite structure and a bainite structure, an average block grain diameter of the pearlite structure at a region from a surface layer to 0.1 D is 15 μm or less when a diameter of the wire material is set to be D, and (the average block grain diameter of the pearlite structure at the region from the surface layer to 0.1 D)/(an average block grain diameter of the pearlite structure at a range from 0.25 D to a center) is less than 1.0. | 10-02-2014 |