| Patent application number | Description | Published |
|---|
| 20080235242 | Advanced Contact Management in Communications Networks - A system provided herein permits a communications network subscriber to establish a local contact database on at least one communications device. The local contact database can communicate with a global contact database to receive contact information updates for a group of subscribers stored within the local contact database. The contact information can include basic contact information, such as name, address, email address, and telephone number. The contact information can also include advanced contact information, such as registration and activity information for each communications device associated with the group of subscribers, location information, hotspot information, points of interest information, and social networking information. Methods are provided herein that permit subscribers to introduce each other and obtain contact information securely. Methods are also provided herein that permit subscribers to request further contact information after a communication session is terminated. | 09-25-2008 |
| 20090022285 | Dynamic Voicemail Receptionist System - A voicemail receptionist system includes a memory and a processor. The memory can store data relating to one or more users. An incoming communication can be handled by the voicemail receptionist system and provided with functionality based upon a user's preferences, for example. The data stored by the voicemail receptionist system can be updated at any time, or automatically updated upon updating of the data, or upon occurrence of a trigger event. Voicemail receptionist functionality can include standard voicemail system functionality as well as functionality relating to email, text messaging, MMS messaging, calendar features, schedule announcements, location data, as well as other features. | 01-22-2009 |
| 20090024633 | Systems and methods for remote deletion of contact information - An exemplary system for providing remote deletion of contact information includes a first device associated with a first user. The first device is configured to generate and send a delete request message to a second device. In some embodiments, the delete request message includes a request to delete contact information for the first user from the second device. The second device can be configured to receive the delete request message and delete the first user's contact information. A method for providing remote deletion of contact information includes a delete request message being generated at a first device, associated with a first user. The delete request message can include a request to delete contact information for the first user. The first device can send the delete request message to a second device. The delete request message can instruct the second device to delete the first user's contact information. | 01-22-2009 |
| 20090285129 | Systems and Methods for Delayed Message Delivery - A system for delayed message delivery can include an IP Multimedia Subsystem (IMS) network that is in communication with at least one of a first user equipment and a second user equipment, and a message application server. The message application server can be configured to receive a message sent from the first user equipment, store the message temporarily in accordance with a time parameter, and send the message to a gateway when the time parameter is satisfied. The gateway can be configured to receive a message formatted in accordance with a first protocol used by the IMS network and convert the message into a format in accordance with a second protocol used by a message center. The message center can be configured to receive the message formatted in accordance with the second protocol and forward the message to the second user equipment. Other systems for delayed message delivery and corresponding methods are disclosed. | 11-19-2009 |
| 20100287241 | Enhanced Messaging Feature - The present disclosure provides various systems and methods for providing enhanced messaging features. An exemplary method for providing a predictive response messaging feature includes receiving a message from a first device ( | 11-11-2010 |
| Patent application number | Description | Published |
|---|
| 20080296690 | Metal interconnect System and Method for Direct Die Attachment - Provided herein is an exemplary embodiment of a semiconductor chip for directly connecting to a carrier. The chip includes a metal layer applied to a top surface of the chip; a passivation layer applied over the metal layer such that portions of the passivation layer is selectively removed to create one or more openings (“bond pads”) exposing portions of the metal layer and one or more solderable metal contact regions formed on each of the one or more openings. The solderable metal contact regions electrically connect to the carrier when the chip is positioned face down on the carrier, supplied with a thin layer of solder and heated. | 12-04-2008 |
| 20090014791 | Lateral Power MOSFET With Integrated Schottky Diode - A semiconductor device includes a substrate. The substrate includes a semiconductor material. An electrically isolated region is formed over the substrate. A metal-oxide-semiconductor field-effect transistor (MOSFET) is formed over the substrate within the electrically isolated region. The electrically isolated region includes a trench formed around the electrically isolated region. An insulative material such as silicon dioxide (SiO2) may be deposited into the trench. A diode is formed over the substrate within the electrically isolated region. In one embodiment, the diode is a Schottky diode. A metal layer may be formed over a surface of the substrate to form an anode of the diode. A first electrical connection is formed between a source of the MOSFET and an anode of the diode. A second electrical connection is formed between a drain of the MOSFET and a cathode of the diode. | 01-15-2009 |
| 20090283826 | Semiconductor Device and Method of Forming High Voltage SOI Lateral Double Diffused MOSFET with Shallow Trench Insulator - A semiconductor device has a buried oxide layer formed over a substrate. An active silicon layer is formed over the buried oxide layer. A drain region is formed in the active silicon layer. An LDD drift region is formed in the active silicon layer adjacent to the drain region. The drift region has a graded doping distribution. A co-implant region is formed in the active silicon. A source region is formed in the co-implant region. A shallow trench insulator is formed along a top surface of the LDD drift region. The shallow trench isolator has a length less than the LDD drift region. The shallow trench insulator terminates under the polysilicon gate and within the LDD drift region. A polysilicon gate is formed above the active silicon layer between the source region and LDD drift region and at least partially overlapping the shallow trench insulator. | 11-19-2009 |
| 20090321784 | Semiconductor Device and Method of Forming Lateral Power MOSFET with Integrated Schottky Diode on Monolithic Substrate - A monolithic semiconductor device has an insulating layer formed over a first substrate. A second substrate is disposed over the first insulating layer. A power MOSFET with body diode is formed over the second substrate. A Schottky diode is formed over the second substrate in proximity to the MOSFET. An insulation trench is formed within the second substrate between the MOSFET and Schottky diode. The isolation trench surrounds the MOSFET and first Schottky diode. A first electrical connection is formed between a source of the MOSFET and an anode of the Schottky diode. A second electrical connection is formed between a drain of the MOSFET and a cathode of the Schottky diode. The Schottky diode reduces charge build-up within the body diode and reverse recovery time of the first power MOSFET. The power MOSFET and integrated Schottky can be used in power conversion or audio amplifier circuit. | 12-31-2009 |
| 20110140200 | Lateral Power MOSFET With Integrated Schottky Diode - A semiconductor device includes a substrate having a first region and a second region. The first region is electrically isolated from the second region. The semiconductor device further includes a lateral field-effect transistor (FET) disposed within the first region. The lateral FET includes a first terminal and a second terminal. The semiconductor device further includes a diode disposed within the second region, the diode including a plurality of anode regions and a plurality of cathode regions. The semiconductor device further includes a first electrical connection between the first terminal of the lateral FET and the anode regions of the diode, and a second electrical connection between the second terminal of the lateral FET and the cathode regions of the diode. The first and second electrical connections are disposed over a surface of the substrate. | 06-16-2011 |
| Patent application number | Description | Published |
|---|
| 20090123441 | Engineered Dendritic Cells and Uses for the Treatment of Cancer - This invention provides the field of therapeutics. Most specifically present invention provides methods of generating in vitro engineered dendritic cells conditionally expressing interleukin-12 (IL-12) under the control of a gene expression modulation system in the presence of activating ligand and uses for therapeutic purposes in animals including human. | 05-14-2009 |
| 20100008940 | PEPTIDE ANALOGS CAPABLE OF ENHANCING STIMULATION OF A GLIOMA-SPECIFIC CTL RESPONSE - The invention provides a peptide derived from the interleukin-13 receptor α2, which serves as a HLA-A2-restricted cytotoxic T lymphocyte (CTL) epitope. The invention can be used as a vaccine for glioma and can be formulated into compositions for medical or veterinary use. In addition, the invention provides the use of a peptide derived from the Eph family of tyrosine kinase receptors which can be also used as a vaccine for glioma and can be formulated into compositions for medical or veterinary use. | 01-14-2010 |
| 20100322909 | TH1-ASSOCIATED MICRORNAS AND THEIR USE FOR TUMOR IMMUNOTHERAPY - Described herein is the identification of miRNAs (miRs) that are up-regulated in Th1 cells compared to Th2 cells (referred to herein as Th1-associated miRs). In particular, the miR-17-92 gene cluster was found to exhibit significantly greater expression in Th1 cells. Over-expression of miR-17-92 in T cells promotes the Th1 phenotype. Thus, the use of Th1-associated miRs for cancer immunotherapy is described. Provided herein are isolated T cells containing a heterologous nucleic acid molecule encoding a Th1-associated miR, such as the miR17-92 gene cluster, or a portion thereof. In some embodiments, the T cell is a tumor antigen (TA)-specific T cell, such as a TA-specific CTL. Further provided is a method of treating cancer in a subject by selecting a subject with cancer and administering to the subject an isolated T cell as disclosed herein. Also provided is a method of treating a subject with cancer by transfecting isolated T cells obtained from the subject with a heterologous nucleic acid molecule encoding a Th1-associated miR and administering the transfected T cells to the subject. In some embodiments of the method, the heterologous nucleic acid molecule encodes the miR-17-92 transcript or a portion thereof. In some embodiments, the isolated T cell is a TA-specific T cell, such as a CTL. | 12-23-2010 |
