Patent application number | Description | Published |
20120202355 | PATTERNED DUMMY WAFERS LOADING IN BATCH TYPE CVD - A method for semiconductor device fabrication is provided. Embodiments of the present invention are directed towards using at least one patterned dummy wafer along with one or more product wafers in a film deposition system to create a sidewall layer thickness variation that is substantially uniform across all product wafers. The at least one patterned dummy wafer may have a high density patterned substrate surface with a topography that is different from or substantially similar to a topography of the one or more product wafers. Furthermore, in a batch type Chemical Vapor Deposition (CVD) system, the at least one patterned dummy wafer may be placed near a gas inlet of the CVD system. In another embodiment, at least one patterned dummy wafer may be placed near an exhaust of the CVD system. Additionally, the patterned dummy wafers may be reusable in subsequent film deposition processes. | 08-09-2012 |
20120241871 | INTEGRATING TRANSISTORS WITH DIFFERENT POLY-SILICON HEIGHTS ON THE SAME DIE - A method of fabricating an integrated circuit including a first region and a second region each having different poly-silicon gate structures is provided. The method includes depositing a first poly-silicon layer over the first and the second region and depositing, within the second region, an oxide layer over the first poly-silicon layer. A second poly-silicon layer is deposited over the first poly-silicon layer and the oxide region. A portion of the second poly-silicon layer that lies over the oxide region is then stripped away. | 09-27-2012 |
20130023101 | METHOD AND MANUFACTURE FOR EMBEDDED FLASH TO ACHIEVE HIGH QUALITY SPACERS FOR CORE AND HIGH VOLTAGE DEVICES AND LOW TEMPERATURE SPACERS FOR HIGH PERFORMANCE LOGIC DEVICES - A method and manufacture for memory device fabrication is provided. Spacer formation and junction formation is performed on both: a memory cell region in a core section of a memory device in fabrication, and a high-voltage device region in a periphery section of the memory device in fabrication. The spacer formation and junction formation on both the memory cell region and the high-voltage device region includes performing a rapid thermal anneal. After performing the spacer formation and junction formation on both the memory cell region and the high-voltage device region, spacer formation and junction formation is performed on a low-voltage device region in the periphery section. | 01-24-2013 |
20140117435 | INTEGRATING TRANSISTORS WITH DIFFERENT POLY-SILICON HEIGHTS ON THE SAME DIE - A method of fabricating an integrated circuit including a first region and a second region each having different poly-silicon gate structures is provided. The method includes depositing a first poly-silicon layer over the first and the second region and depositing, within the second region, an oxide layer over the first poly-silicon layer. A second poly-silicon layer is deposited over the first poly-silicon layer and the oxide region. A portion of the second poly-silicon layer that lies over the oxide region is then stripped away. | 05-01-2014 |
Patent application number | Description | Published |
20150075254 | GAS SENSOR ELEMENT AND GAS SENSOR - A gas sensor element comprises an elongated plate-like element including, at a forward end portion, a detecting section comprising a solid electrolyte body having an outer surface and a back surface, a detection electrode on the outer surface and a reference electrode on the back surface, and a porous layer covering the detection electrode. The coating layer includes a first protection layer entirely covering the detecting section, and a second protection layer circumferentially covering the first protection layer and extending at least from a forward end of the first protection layer to a position located rearward of the porous layer. The thickness of the first protection layer on the porous layer is larger than that of the first protection layer rearward of the porous layer. The thickness of the second protection layer rearward of the porous layer is larger than that of the second protection layer above the porous layer. | 03-19-2015 |
20150114085 | GAS SENSOR ELEMENT, GAS SENSOR, AND METHOD OF MANUFACTURING GAS SENSOR ELEMENT - A gas sensor element has a protection layer smaller in heat capacity than a conventional protection layer formed by a dipping process. A gas sensor includes the gas sensor element. The gas sensor element is manufactured by a method of manufacturing. The gas sensor element includes at least one space formed between a protection layer and an element body. The space is positioned over at least one of four vertexes of a forward end of the element body at a location at which the thickness of the protection layer is likely to become small. Therefore, it is possible to restrain breakage of the vertexes of the forward end of the element body which could otherwise result from thermal shock stemming from adhesion of water. The protection layer of the gas sensor element can be reduced in thickness and thus in heat capacity as compared with a conventional protection layer. | 04-30-2015 |
20150114102 | GAS SENSOR ELEMENT, GAS SENSOR, AND METHOD OF MANUFACTURING GAS SENSOR ELEMENT - A gas sensor element in an air/fuel ratio sensor includes an element body and a protection layer having two layers (a first layer and a second layer). The gas sensor element has at least one separation portion in the form of a space between the first layer and the second layer. The gas sensor element can temporarily accumulate, in the at least one separation portion, water which adheres to the surface of the protection layer and penetrates into the protection layer. Thus, as compared with a protection layer which is identical in thickness to the protection layer, but does not have separation portions, water adhering to the protection layer is less likely to reach the element body. Therefore, there can be restrained breakage of an end of the element body which could otherwise result from thermal shock stemming from adhesion of water. | 04-30-2015 |
Patent application number | Description | Published |
20140321796 | WAVELENGTH SELECTIVE SWITCH - A wavelength selective switch includes a light input and output part in which light input/output ports are arranged in a predetermined direction, the light input/output ports including a first port for inputting light, a second port for outputting the light, and at least one third port for inputting or outputting the light, a wavelength dispersive element optically coupled to the light input and output part, and a phase modulation element which includes a plurality of pixels performing phase modulation and diffractively deflects an optical path of the light arriving from the first port via the wavelength dispersive element by presenting a diffraction-grating-shaped phase modulation pattern, and the light input/output ports are arranged so that a 1 | 10-30-2014 |
20150023662 | WAVELENGTH SELECTIVE SWITCH AND METHOD OF MANUFACTURING SAME - An light input/output unit has at least three first ports, including a first input port for inputting light and a first output port for outputting light; at least three second ports, including a second input port for inputting light and a second output port for outputting light; and an alignment port for inputting and outputting alignment light. An optical axis of the input/output light of the first port and an optical axis of the input/output light of the second port differ from each other. The dispersive element changes the optical axes of input/output lights of the first and second ports by an angle corresponding to a wavelength. The light deflective element has a first part for directing the light from the first input port to the first output port and a second part for directing the light from the second input port to the second output port. | 01-22-2015 |
20150078748 | WAVELENGTH SELECTIVE SWITCH - A wavelength selective switch includes a wavelength dispersive element that divides a beam input from an input port, a beam director that deflects a wavelength component, and a free space optical system that optically couple a input/output unit, the wavelength dispersive element, and the beam director. The free space optical system converts a shape of the beam such that a size extending in a second plane is relatively smaller than a size extending in a first plane, and to have a long axis and a short axis in a third plane. The long axis is inclined with respect to the first direction. The beam director includes a beam directing region in which a plurality of beam directing elements are arranged. The beam directing region deflects the respective wavelength components toward the predetermined output port. The beam directing region is provided to correspond to the shape of the beam. | 03-19-2015 |
20150098701 | OPTICAL UNIT AND OPTICAL DEVICE - A signal processing element that modulates beam from an input/output unit, an optical substrate mounting the signal processing element, and a temperature controller that controls a temperature of the signal processing element are included, the signal processing element includes an incidence surface on which the beam is incident, a modulation layer that modulates the beam from the incidence surface, and a driving substrate for controlling the modulation of the beam arranged on the opposite side of the incidence surface, the temperature controller is arranged opposite the driving substrate, the incidence surface is connected to the optical substrate by a first connection portion, the driving substrate is connected to the temperature controller by a second connection portion, and an area on the temperature controller side of the second connection portion is more greatly deformed than that on the driving substrate side according to change in volume of the temperature controller. | 04-09-2015 |
20150260920 | OPTICAL PATH CONTROL DEVICE - In an optical path control device | 09-17-2015 |
20150286009 | OPTICAL DEVICE - An optical device comprises an input/output port including an input port and an output port arranged in a first direction, a dispersive element dispersing an optical signal input from the input port in accordance with the wavelength in a second direction perpendicular to the first direction so as to generate a plurality of wavelength components, a light deflection element including pixels arranged in the first direction configured to present a phase modulation pattern for independently phase-modulating each of the wavelength components, and the phase modulation pattern including a first pattern for deflecting each of the wavelength components toward the output port, and a second pattern different from the first pattern, and an anamorphic converter configuring a beam spot of the wavelength components incident on the light deflection element to an elliptical shape relatively larger in the first direction than in the second direction. | 10-08-2015 |
20160061672 | INTERFEROMETRIC OPTICAL FIBER SENSOR SYSTEM AND INTERFEROMETRIC OPTICAL FIBER SENSOR HEAD - An interferometric optical fiber sensor system comprises a light source, a first coupler optically connected to the light source, a first optical path for inputting measurement light, a second optical path for inputting reference light, a second coupler for combining the first and second optical paths together, a photodetector for measuring modulation of the measurement light and the reference light, and a coil for modulating with a stress exerted thereon the measurement light and the reference light. The first optical path has an optical length equal to that of the second optical path. The first optical path has a first delay line, while the second optical path has a second delay line. The coil is disposed between the first delay line and the second coupler and between the second delay line and the first coupler. | 03-03-2016 |
20160124152 | OPTICAL PATH CONTROL DEVICE - In an optical path control device, a light input section | 05-05-2016 |
20160124155 | WAVELENGTH SELECTION SWITCH AND CONTROL METHOD FOR PHASE MODULATION ELEMENT - A wavelength selective switch | 05-05-2016 |
Patent application number | Description | Published |
20150203610 | COPOLYMER FOR IMPROVING METHACRYLIC RESIN HEAT RESISTANCE - A copolymer for improving heat resistance of a methacrylic resin which can achieve preservation of excellent transparency of the methacrylic resin and improvement in heat resistance, and can provide a molded product having excellent appearance, by adding the copolymer to the methacrylic resin, is provided. According to the present invention, a copolymer for improving heat resistance of a methacrylic resin, including: 45 to 85 mass % of an aromatic vinyl monomer unit; 5 to 45 mass % of a (meth)acrylic acid ester monomer unit; and 10 to 20 mass % of an unsaturated dicarboxylic acid anhydride monomer unit; wherein the copolymer has a total light transmittance of 88% or more, the total light transmittance being measured in accordance with ASTM D1003 for a sample with 2 mm-thickness, is provided. | 07-23-2015 |
20150284557 | COPOLYMER FOR IMPROVING HEAT RESISTANCE OF AROMATIC VINYL-VINYL CYANIDE RESIN - Provided is a copolymer for improving heat resistance of aromatic vinyl-vinyl cyanide based resin which can achieve preservation of excellent transparency of the aromatic vinyl-vinyl cyanide based resin, improvement in heat resistance, and a molded product having excellent appearance, by adding the copolymer to the aromatic vinyl-vinyl cyanide based resin. A copolymer for improving heat resistance of an aromatic vinyl-vinyl cyanide based resin, including: 45 to 85 mass % of an aromatic vinyl monomer unit; 5 to 45 mass % of a (meth)acrylic acid ester monomer unit; and 10 to 20 mass % of an unsaturated dicarboxylic acid anhydride monomer unit; wherein the copolymer has a total light transmittance of 88% or more, the total light transmittance being measured in accordance with ASTM D1003 for a sample with 2 mm-thickness, is provided. | 10-08-2015 |