Ohse, JP
Katsuto Ohse, Tokyo JP
Patent application number | Description | Published |
---|---|---|
20080254239 | Method for Preparation of Thermally Sensitive Recording Medium - A thermally sensitive recording medium characterized to be superior in writing aptitude, printing aptitude, causes less head debris, possesses good water resistance, causes less sticking and is excellent in preservative stability of developed color in nature environment such as heat, water, humid or light, to sebum when handled with hand, oils, plasticizers and solvents can be obtained by following method, that is, a method for preparation of a thermally sensitive recording medium possessing a coating layer formed by applying a coating (A) containing a binder and a coating (B) containing a crosslinking agent on a thermally sensitive recording layer, which is formed on a substrate, and said thermally sensitive recording layer contains a colorless or pale colored electron donating leuco dye and an electron accepting color developing agent comprising, forming an over coating layer by applying said coating (A) and coating (B) separately in accordance with a curtain coating method, wherein the formation of the over coating layer is comprising, after applying one coating, applying another coating in accordance with a curtain coating method without having a drying process between. | 10-16-2008 |
20110269622 | THERMOSENSITIVE RECORDING MEDIUM - The present invention provides a thermosensitive recording medium having an excellent image durability, even when used in a severe condition. | 11-03-2011 |
20120129692 | THERMOSENSITIVE RECORDING MEDIUM - The present invention present a thermosensitive recording medium having excellent printed image quality on a thermosensitive recording surface, particularly for bar code readability, and also good record density and recording property after storage. | 05-24-2012 |
20120157303 | COATING SOLUTION FOR HEAT-SENSITIVE COLOR-DEVELOPING LAYER, AND HEAT-SENSITIVE RECORDING MATERIAL - Provided are a coating solution for a thermosensitive color developing layer of excellent storability wherein color development during its storage or during producing a thermal recording material is suppressed, and a thermal recording material with excellent print portion (image portion) storability and suppressed staining in the background color (white background). | 06-21-2012 |
20130059728 | THERMOSENSITIVE RECORDING MEDIUM - A thermosensitive recording medium having excellent image quality and surface strength is provided. The thermosensitive recording medium having excellent image quality and surface strength is obtained by containing a saturated fatty acid amide in the substrate to lower the density of the substrate. The thermosensitive recording medium of the present invention has an adequate general printability and problems such as print through are avoided. Furthermore, the thermosensitive recording medium of the present invention can assure adequate image quality and general printability even when an undercoat layer is not installed. | 03-07-2013 |
20130237414 | NOVEL PHENOLSULFONIC ACID ARYL ESTER DERIVATIVE, AND HEAT-SENSITIVE RECORDING MATERIAL USING SAME - The invention provides a phenolsulfonic acid aryl ester represented by formula (1) | 09-12-2013 |
Naoyuki Ohse, Tsukuba-Shi JP
Patent application number | Description | Published |
---|---|---|
20130000728 | PHOTOVOLTAIC CELL AND MANUFACTURING METHOD THEREOF - A photovoltaic cell includes a photoelectric conversion element (PCE) in which an i-type silicon layer formed of a microcrystalline silicon film is provided between an n-type silicon layer and a p-type silicon layer, and the n-type silicon layer or p-type silicon layer positioned on a substrate side is configured of an amorphous silicon film. The PCE is formed wherein a mixture of a silane containing gas and hydrogen gas is introduced into a chamber and a seed layer formed of a microcrystalline silicon film is formed between the n-type silicon layer or p-type silicon layer positioned on the substrate side and the i-type silicon layer. The crystallization rate of a portion in contact with the n-type silicon layer or p-type silicon layer positioned on the substrate side is lower than that of the i-type silicon layer, and the rate increases continuously, or gradually in two or more stages, toward the i-type silicon layer side, continuing to the i-type silicon layer. | 01-03-2013 |
Norihiro Ohse, Kanagawa JP
Patent application number | Description | Published |
---|---|---|
20080259286 | Projection display apparatus - A projection display apparatus includes a light source, a plurality of light modulating elements that respectively modulate different color components of light emitted from the light source, a plurality of light diffusing elements that are disposed on sides near the light source with reference to the respective light modulating elements, a light integrating element that integrates the different color components modulated by the light modulating elements, and a projection optical element that projects light resulting from the different color components integrated by the light integrating element. | 10-23-2008 |
20100238374 | FIBER LAMP, BACKLIGHT AND LIQUID CRYSTAL DISPLAY - A fiber lamp allowed to reduce an influence of heat, a backlight and a liquid crystal display both using the fiber lamp are provided. A fiber lamp includes: a side-emitting fiber including a core layer guiding light and a cladding layer arranged around the core layer, the cladding layer allowing light to be extracted from a surface of the cladding layer; a light source arranged on one or both of a pair of end surfaces of the side-emitting fiber and emitting single-color light; and a phosphor layer arranged on the surface of the cladding layer and including a red phosphor and a green phosphor. | 09-23-2010 |
Takeshi Ohse, Sendai JP
Patent application number | Description | Published |
---|---|---|
20110214814 | PLASMA PROCESSING APPARATUS AND SHOWER HEAD - There is provided a plasma processing apparatus including: a shower head installed within a processing chamber for processing a substrate and facing a mounting table for mounting the substrate; a multiple number of gas exhaust holes formed through the shower head to be extended from a facing surface of the shower head to an opposite surface to the facing surface; a multiple number of openable and closable trigger holes formed through the shower head to be extended from the facing surface of the shower head to the opposite surface, and configured to allow plasma leakage from the facing surface to the opposite surface; and a partition wall installed in a gas exhaust space provided on the side of the opposite surface of the shower head to divide the gas exhaust space into a multiple number of regions, each region communicating with one or more trigger holes. | 09-08-2011 |
Takeshi Ohse, Yamanashi JP
Patent application number | Description | Published |
---|---|---|
20140020832 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD USING SAME - A substrate processing method uses a substrate processing apparatus including a chamber for accommodating a substrate, a lower electrode to mount the substrate, a first RF power applying unit for applying an RF power for plasma generation into the chamber, and a second RF power applying unit for applying an RF power for bias to the lower electrode. The RF power for plasma generation is controlled to be intermittently changed by changing an output of the first RF power applying unit at a predetermined timing. If no plasma state or an afterglow state exists in the chamber by a control of the first RF power applying unit, an output of the second RF power applying unit is controlled to be in an OFF state or decreased below an output of the second RF power applying unit when the output of the first RF power applying unit is a set output. | 01-23-2014 |
Takeshi Ohse, Yamanashi-Ken JP
Patent application number | Description | Published |
---|---|---|
20150162223 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - There are provided a substrate processing apparatus and a substrate processing method realizing an effective reduction of a voltage change of a substrate on an electrode to reduce the variation of incident energy of ions entering the substrate. The substrate processing apparatus includes: a first electrode holding a substrate on a main surface of the first electrode; a second electrode facing the first electrode; a RF power source applying to the first electrode a RF voltage whose frequency is equal to or higher than 40 MHz; and a pulse voltage applying unit applying to the first electrode a pulse voltage decreasing in accordance with a lapse of time, by superimposing the pulse voltage on the RF voltage. | 06-11-2015 |
Takeshi Ohse, Nirasaki City JP
Patent application number | Description | Published |
---|---|---|
20100243607 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD USING SAME - A substrate processing method uses a substrate processing apparatus including a chamber for accommodating a substrate, a lower electrode to mount the substrate, a first RF power applying unit for applying an RF power for plasma generation into the chamber, and a second RF power applying unit for applying an RF power for bias to the lower electrode. The RF power for plasma generation is controlled to be intermittently changed by changing an output of the first RF power applying unit at a predetermined timing. If no plasma state or an afterglow state exists in the chamber by a control of the first RF power applying unit, an output of the second RF power applying unit is controlled to be in an OFF state or decreased below an output of the second RF power applying unit when the output of the first RF power applying unit is a set output. | 09-30-2010 |
Takeshi Ohse, Nirasaki-Shi JP
Patent application number | Description | Published |
---|---|---|
20090047795 | PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND STORAGE MEDIUM - A plasma processing apparatus includes a first radio frequency (RF) power supply unit for applying a first RF power for generating a plasma from a processing gas to at least one of a first and a second electrode which are disposed facing each other in an evacuable processing chamber. The first RF power supply unit is controlled by a control unit so that a first phase at which the first RF power has a first amplitude for generating a plasma and a second phase at which the first RF power has a second amplitude for generating substantially no plasma are alternately repeated at predetermined intervals. | 02-19-2009 |
20090194508 | SUBSTRATE PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A substrate plasma processing apparatus includes a substrate holding electrode and a counter electrode which are arranged in a chamber, a high frequency generating device which applies a high frequency of 50 MHZ or higher to the substrate holding electrode, a DC negative pulse generating device which applies a DC negative pulse voltage in a manner of superimposing on the high frequency, and a controller controlling to cause intermittent application of the high frequency and cause intermittent application of the DC negative pulse voltage according to the timing of on or off of the high frequency. | 08-06-2009 |
20100072172 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - There are provided a substrate processing apparatus and a substrate processing method realizing an effective reduction of a voltage change of a substrate on an electrode to reduce the variation of incident energy of ions entering the substrate. The substrate processing apparatus includes: a first electrode holding a substrate on a main surface of the first electrode; a second electrode facing the first electrode; a RF power source applying to the first electrode a RF voltage whose frequency is equal to or higher than 40 MHz; and a pulse voltage applying unit applying to the first electrode a pulse voltage decreasing in accordance with a lapse of time, by superimposing the pulse voltage on the RF voltage. | 03-25-2010 |
20130122714 | PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND STORAGE MEDIUM - A plasma processing apparatus includes a first radio frequency (RF) power supply unit for applying a first RF power for generating a plasma from a processing gas to at least one of a first and a second electrode which are disposed facing each other in an evacuable processing chamber. The first RF power supply unit is controlled by a control unit so that a first phase at which the first RF power has a first amplitude for generating a plasma and a second phase at which the first RF power has a second amplitude for generating substantially no plasma are alternately repeated at predetermined intervals. | 05-16-2013 |
Takuhito Ohse, Saitama JP
Patent application number | Description | Published |
---|---|---|
20110045538 | Peptide, Use Of The Peptide, Method For The Production Of The Peptide, Solid Support Having The Peptide Immobilized Thereon, And Method For Production Of The Solid Support - Provided is a peptide containing a variable region and improved in production efficiency. | 02-24-2011 |
20140220626 | Peptide, Use of the Peptide, Method for the Production of the Peptide, Solid Support Having the Peptide Immobilized Thereon, and Method for Production of the Solid Support - Provided is a peptide containing a variable region and improved in production efficiency. The peptide contains a variable region to which an antigen-binding site is to be formed and has an amino acid sequence expressing a specific adsorption function to a solid phase at a site closer to the C-terminal than a heavy-chain variable region or at a site closer to the C-terminal than a light-chain variable region. | 08-07-2014 |
Yuko Ohse, Shinagawa JP
Patent application number | Description | Published |
---|---|---|
20090016733 | Optical waveguide holding member and optical transceiver - An optical transceiver using an optical waveguide holding member is disclosed. The optical transceiver includes a printed circuit board and the optical waveguide holding member. Photoelectric conversion elements are formed in the printed circuit board. An optical waveguide including core members is formed in the optical waveguide holding member. The optical waveguide optically connects the photoelectric conversion elements to external optical fibers. An element side lens is formed at one end of the core member so as to face a light receiving and emitting section of the photoelectric conversion element. Flanges are formed on the corresponding side walls of the optical waveguide holding member. The fixed centers of the flanges and optical centers of the element side lenses are arrayed on the same straight line. | 01-15-2009 |