Patent application number | Description | Published |
20090014830 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device including at least one of the following steps: Forming an insulating film having at least one trench on and/or over a semiconductor substrate. Forming a metal film on and/or over a surface of an insulating film, including inside the trench. Forming a metal seed layer on and/or over the metal film inside the trench. Forming a metal plating layer on and/or over the metal seed layer to fill the trench. | 01-15-2009 |
20090014888 | SEMICONDUCTOR CHIP, METHOD OF FABRICATING THE SAME AND STACK PACKAGE HAVING THE SAME - A semiconductor chip may include a wafer, a semiconductor device formed on the wafer, a first dielectric layer formed on the wafer and the semiconductor device, a first metal interconnection formed on the first dielectric layer, a second dielectric layer formed on the first dielectric layer and the lower interconnection, and a third dielectric layer formed on the second dielectric layer. A second metal interconnection may be formed in the third dielectric layer, a first nitride layer formed on the third dielectric layer and the first metal interconnection, a via hole extending through the wafer, the first dielectric layer, the second dielectric layer, the third dielectric layer and the first nitride layer, a via formed in the via hole and a third metal interconnection formed on the first oxide layer, an exposed upper end of the via and the second metal interconnection. | 01-15-2009 |
20090026614 | SYSTEM IN PACKAGE AND METHOD FOR FABRICATING THE SAME - A system device package that includes a semiconductor substrate, a metal line formed on the semiconductor substrate, a passivation film formed over the semiconductor substrate including the metal line, wherein the passivation film includes first and second openings, a pad formed over the passivation film and covering the first and second openings for connection to the metal line through the first opening, a via conductor extending through the pad, the passivation film and the semiconductor substrate such that the via conductor is in direct contact with the pad. The via conductor includes a first exposed end protruding from the pad and which serves as a first bump and a second exposed end protruding from the substrate that serves as a second bump. As a result, it is possible to reduce the total number of processes and fabrication costs and thus to improve fabrication efficiency. | 01-29-2009 |
20090045487 | SEMICONDUCTOR CHIP, METHOD OF FABRICATING THE SAME AND STACKED PACKAGE HAVING THE SAME - A semiconductor chip, a method of fabricating the same and a stacked package having the same are disclosed. The semiconductor chip includes a wafer, a semiconductor device disposed on the wafer, an insulating layer covering the semiconductor device and disposed on the wafer, a deep via formed to penetrate the wafer and the insulating layer, and a heat dissipation member spaced at a predetermined interval from the deep via and penetrating at least a portion of the insulating layer for dissipating heat generated by the deep via. | 02-19-2009 |
20090115025 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device may include a chip including a chip including a silicon substrate having a semiconductor device area, a pad area and a scribe lane defining an outer contour of the chip. A semiconductor device may be formed in the semiconductor device area, and a pad electrically connected with the semiconductor device may be formed in the pad area. A crack prevention pattern may be formed on an outer contour of the chip, such that the crack prevention pattern extends from a lowest portion to a highest portion of the semiconductor device. A crack prevention pattern is manufactured such that chip cracking can be prevented during the sawing process. | 05-07-2009 |
20100012934 | SEMICONDUCTOR CHIP AND SEMICONDUCTOR CHIP STACKED PACKAGE - A semiconductor chip in a semiconductor chip stacked package may include a semiconductor substrate formed with a semiconductor device, an insulating layer over the semiconductor substrate, a deep via passing through the semiconductor substrate and the insulating layer, an interconnection layer electrically connecting the semiconductor device with the deep via, and a test device electrically connected with both the deep via and the interconnection layer. | 01-21-2010 |
20100019390 | SEMICONDUCTOR DEVICE, SEMICONDUCTOR CHIP, MANUFACTURING METHODS THEREOF, AND STACK PACKAGE - A manufacturing method includes sequentially forming first and second material layers having different etch selectivities in a laminated fashion, patterning the second material layer, to form an etch mask, etching the first material layer using the etch mask, to form a via hole in the first material layer, forming a photo mask over the etch mask such that a region larger than the via hole is exposed through the photo mask, etching the etch mask using the photo mask, removing the photo mask, and forming a metal material over the first material layer, to fill the via hole. Accordingly, it is possible to prevent formation of a side wall undercut in a deep via etching process, and thus to ease subsequent processes for forming an oxide barrier film, a barrier metal film, and a metal layer. | 01-28-2010 |
20100078638 | IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME - An image sensor and a method of fabricating an image sensor. An image sensor may include a readout circuitry arranged over a semiconductor substrate, an interlayer dielectric film provided with metal lines arranged over a semiconductor substrate, and/or a lower electrode arranged over a interlayer dielectric film such that a lower electrode may be connected to metal lines. An image sensor may include a first-type conductive layer pattern arranged over a lower electrode, an intrinsic layer arranged over a surface of a semiconductor substrate such that an intrinsic layer may substantially cover a first-type conductive layer pattern. An image sensor may include a second-type conductive layer arranged over an intrinsic layer. A method of fabricating an image sensor may include a patterned n-type amorphous silicon layer which may be treated with N | 04-01-2010 |
20100078746 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device, an image sensor, and methods of manufacturing the same. A semiconductor device may include metal interconnections formed over a lower substrate, a hard mask formed over metal interconnections, and/or an insulating layer formed over a surface of a lower substrate. A semiconductor device may include an insulating layer including an air gap formed between metal interconnections. An image sensor may include a pixel array area having photodiodes and transistors, and/or a logic area having a plurality of transistors, which may be formed over a semiconductor substrate. An image sensor may include a metal interconnection and/or an insulating layer structure connected to transistors, and may cover a pixel array area and/or a logic area. An image sensor may include a color filter layer formed over a pixel array area, and an insulating layer structure of a pixel array area having an air gap between metal interconnections. | 04-01-2010 |
20100078750 | IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME - An image sensor includes readout circuit arranged over a semiconductor substrate, an interlayer dielectric film covering the readout circuit and including metal lines, a buffer layer arranged over the interlayer dielectric film, a crystallized silicon layer arranged over the buffer layer, an ion-implantation layer to partition photodiode regions corresponding to unit pixels in the crystallized silicon layer, and a metal plug arranged in a via-hole of the buffer layer, to electrically connect the photodiode region to the metal lines. In accordance with the method, a channel, enabling smooth transfer of photocharges, is provided between the photodiode and the readout circuit, to minimize dark current sources and prevent a deterioration in saturation and sensitivity and thereby improve image properties. | 04-01-2010 |