Patent application number | Description | Published |
20100270561 | Method for manufacturing a cubic silicon carbide single crystal thin film and semiconductor device based on the cubic silicon carbide single crystal thin film - A cubic silicon carbide single crystal thin film is manufactured by a method. A sacrificial layer is formed on a surface of a substrate. A cubic semiconductor layer is formed on the sacrificial layer, the cubic semiconductor layer having at least a surface of cubic crystal structure. A cubic silicon carbide single crystal layer is formed on the cubic semiconductor layer. The sacrificial layer is etched away to release a multilayer structure of the cubic semiconductor layer and the 3C—SiC layer from the substrate. A cubic silicon carbide single crystal thin film of a multilayer structure includes an Al | 10-28-2010 |
20100270562 | Semiconductor wafer, semiconductor thin film, and method for manufacturing semiconductor thin film devices - A method for manufacturing a semiconductor thin film device includes: forming a buffer layer on an Si (111) substrate and a single crystal semiconductor layer on the buffer layer; forming an island including the semiconductor layer, buffer layer, and a portion of the substrate; forming a coating layer on the island; etching the substrate along its Si (111) plane to release the island from the substrate, the coating layer serving as a mask; and bonding the released island to another substrate, a released surface of the released island contacting the another substrate. A semiconductor device includes a single crystal semiconductor layer other than Si, which has a semiconductor device formed on a front surface of an Si (111) layer lying in a (111) plane. The layer is bonded to another substrate with a back surface contacting the another substrate or a bonding layer formed on the another substrate. | 10-28-2010 |
20100320445 | Separation method of nitride semiconductor layer, semiconductor device, manufacturing method thereof, semiconductor wafer, and manufacturing method thereof - In a separation method of a nitride semiconductor layer, a graphene layer in the form of a single layer or two or more layers is formed on a surface of a first substrate. A nitride semiconductor layer is formed on the graphene layer so that the nitride semiconductor layer is bonded to the graphene layer with a bonding force due to regularity of potential at atomic level at an interface therebetween without utilizing covalent bonding. The nitride semiconductor layer is separated from the first substrate with a force which is greater than the bonding force between the nitride semiconductor layer and the graphene layer, or greater than a bonding force between respective layers of the graphene layer. | 12-23-2010 |
20100323164 | Graphene wafer, method for manufacturing the graphene wafer, method for releasing a graphene layer, and method for manufacturing a graphene device - A method is used for releasing a graphene layer from a substrate. A graphene layer is first formed on a surface of a first substrate. A metal layer is then formed on a surface of the graphene layer. A pulling force is then applied to the metal layer to detach the graphene layer from the first substrate. The released graphene layer is bonded by intermolecular force onto a surface of a second substrate separate from the first substrate or onto a surface of a bonding layer formed on the surface of the second substrate. The metal layer is then removed, by for example, etching. | 12-23-2010 |
20110042689 | Semiconductor light-emitting element array device, image exposing device, image forming apparatus, and image display apparatus - A semiconductor light-emitting element array device includes a substrate; a plurality of removable layers being disposed on the substrate; and a thin-film semiconductor light-emitting device being disposed on each of the plurality of removable layers, being made of a different material from a surface material of the substrate, and having a semiconductor light-emitting element; wherein the plurality of removable layers are made of a material which is capable of being etched by a selective chemical etching process. An image exposing device includes an image exposing unit including the semiconductor light-emitting element array device. An image exposing device includes an image exposing unit including the semiconductor light-emitting element array device. An image display apparatus includes an image display unit including the semiconductor light-emitting element array device. | 02-24-2011 |
20110079798 | Light emitting apparatus - A light emitting apparatus includes a plurality of single crystal semiconductor thin films that emit light. The single crystal semiconductor thin films are secured in intimate contact to the surface of a substrate or a bonding layer formed on the substrate. A first conductive electrode is formed on the single crystal semiconductor thin film and is connected to a first conductive side metal layer. The first conductive side metal layer is closer to the surface of the substrate than a top surface of the single crystal semiconductor thin film. A second conductive electrode is formed on the single crystal semiconductor thin film. A second conductive side metal layer is connected to the second conductive electrode. The second conductive side metal layer is closer to the surface of the substrate than the top surface of the single crystal semiconductor thin film. | 04-07-2011 |
20110186876 | Semiconductor light emitting device and image forming apparatus - A semiconductor light emitting device includes laminated semiconductor light emitting elements. A first semiconductor light emitting element is provided on a mounting substrate via a reflection metal layer, and is configured to emit light of first wavelength. A first light-transmissive planarization insulating film is provided covering the first semiconductor light emitting element, and is configured to transmit the light of the first wavelength. A second semiconductor light emitting element is provided on the first semiconductor light emitting element via the first light-transmissive planarization insulating film. The second semiconductor light emitting element is configured to transmit the light of the first wavelength and to emit light of second wavelength. The second semiconductor light emitting element includes a first semiconductor multilayer reflection film facing the first semiconductor light emitting element, which is configured to transmit the light of the first wavelength and to reflect the light of the second wavelength. | 08-04-2011 |
20120241764 | SEMICONDUCTOR DEVICE BASED ON THE CUBIC SILICON CARBIDE SINGLE CRYSTAL THIN FILM - A semiconductor apparatus includes a cubic silicon carbide single crystal thin film of a multilayer structure including an Al | 09-27-2012 |