| Patent application number | Description | Published |
|---|
| 20080198650 | Distortion Estimation And Cancellation In Memory Devices - A method for operating a memory ( | 08-21-2008 |
| 20080198652 | Memory Device Programming Using Combined Shaping And Linear Spreading - A method for data storage includes accepting data for storage in a memory ( | 08-21-2008 |
| 20080219050 | REDUCTION OF BACK PATTERN DEPENDENCY EFFECTS IN MEMORY DEVICES - A method for operating a memory that includes multiple analog memory cells includes storing data in the memory by writing first storage values to the cells, so as to cause the cells to hold respective electrical charge levels. After storing the data, second storage values are read from at least some of the cells, including at least one interfered cell that belongs to a group of cells. A Back Pattern Dependency (BPD) distortion caused by the electrical charge levels of one or more interfering cells in the group to at least one of the second storage values read from the at least one interfered cell is detected and canceled. The second storage values, including the at least one of the second storage values in which the BPD distortion was canceled, are processed so as to reconstruct the data. | 09-11-2008 |
| 20080282106 | DATA STORAGE WITH INCREMENTAL REDUNDANCY - A method for operating a memory includes encoding input data with an Error Correction Code (ECC) to produce input encoded data including first and second sections, such that the ECC is decodable based on the first section at a first redundancy, and based on both the first and the second sections at a second redundancy that is higher than the first redundancy. | 11-13-2008 |
| 20090024905 | COMBINED DISTORTION ESTIMATION AND ERROR CORRECTION CODING FOR MEMORY DEVICES - A method for operating a memory device ( | 01-22-2009 |
| 20090043951 | PROGRAMMING SCHEMES FOR MULTI-LEVEL ANALOG MEMORY CELLS - A method for data storage includes storing first data bits in a set of multi-bit analog memory cells at a first time by programming the memory cells to assume respective first programming levels. Second data bits are stored in the set of memory cells at a second time that is later than the first time by programming the memory cells to assume respective second programming levels that depend on the first programming levels and on the second data bits. A storage strategy is selected responsively to a difference between the first and second times. The storage strategy is applied to at least one group of the data bits, selected from among the first data bits and the second data bits. | 02-12-2009 |
| 20090091979 | RELIABLE DATA STORAGE IN ANALOG MEMORY CELLS IN THE PRESENCE OF TEMPERATURE VARIATIONS - A method for data storage includes programming a first group of analog memory cells at a first time at a known first temperature, so as to cause the analog memory cells in the first group to assume respective first analog storage values. Respective second analog storage values are read from the analog memory cells in the first group at a second time at which the analog memory cells are at a second temperature. A shift is estimated between the first analog storage values and the second analog storage values, and a memory access parameter is adjusted responsively to the estimated shift. A second group of the analog memory cells is accessed at the second temperature using the adjusted memory access parameter. | 04-09-2009 |
| 20090103358 | REDUCING PROGRAMMING ERROR IN MEMORY DEVICES - A method for storing data in an array ( | 04-23-2009 |
| 20090144600 | Efficient re-read operations from memory devices - A method for data storage includes storing data, which is encoded with an Error Correction Code (ECC), in a group of analog memory cells by writing respective first storage values to the memory cells in the group. After storing the data, respective second storage values are read from the memory cells in the group, and the read second storage values are processed so as to decode the ECC. | 06-04-2009 |
| 20090157964 | EFFICIENT DATA STORAGE IN MULTI-PLANE MEMORY DEVICES - A method for data storage includes initially storing a sequence of data pages in a memory that includes multiple memory arrays, such that successive data pages in the sequence are stored in alternation in a first number of the memory arrays. The initially-stored data pages are rearranged in the memory so as to store the successive data pages in the sequence in a second number of the memory arrays, which is less than the first number. The rearranged data pages are read from the second number of the memory arrays. | 06-18-2009 |
| 20090187803 | DECODING OF ERROR CORRECTION CODE USING PARTIAL BIT INVERSION - A method includes receiving an Error Correction Code (ECC) code word, which includes multiple encoded bits that represent data and have a bit order. Multiple subsets of the encoded bits are selected using a selection criterion that does not sequentially follow the bit order. For each subset in at least some of the multiple subsets, the bits in the subset are inverted and the code word having the inverted bits is decoded, so as to reconstruct the data. | 07-23-2009 |
| 20090213653 | PROGRAMMING OF ANALOG MEMORY CELLS USING A SINGLE PROGRAMMING PULSE PER STATE TRANSITION - A method for data storage in analog memory cells includes defining multiple programming states for storing data in the analog memory cells. The programming states represent respective combinations of more than one bit and correspond to respective, different levels of a physical quantity stored in the memory cells. The data is stored in the memory cells by applying to the memory cells programming pulses that cause the levels of the physical quantity stored in the memory cells to transition between the programming states, such that a given transition is caused by only a single programming pulse. | 08-27-2009 |
| 20090213654 | PROGRAMMING ANALOG MEMORY CELLS FOR REDUCED VARIANCE AFTER RETENTION - A method includes defining a nominal level of a physical quantity to be stored in analog memory cells for representing a given data value. The given data value is written to the cells in first and second groups of the cells, which have respective first and second programming responsiveness such that the second responsiveness is different from the first responsiveness, by applying to the cells in the first and second groups respective, different first and second patterns of programming pulses that are selected so as to cause the cells in the first and second groups to store respective levels of the physical quantity that fall respectively in first and second ranges, such that the first range is higher than and the second range is lower than the nominal level. The given data value is read from the cells at a later time. | 08-27-2009 |
| 20090240872 | MEMORY DEVICE WITH MULTIPLE-ACCURACY READ COMMANDS - A method for data storage includes defining at least first and second read commands for reading storage values from analog memory cells. The first read command reads the storage values at a first accuracy, and the second read command reads the storage values at a second accuracy, which is finer than the first accuracy. A condition is evaluated with respect to a read operation that is to be performed over a given group of the memory cells. One of the first and second read commands is selected responsively to the evaluated condition. The storage values are read from the given group of the memory cells using the selected read command. | 09-24-2009 |
| 20100091535 | ADAPTIVE ESTIMATION OF MEMORY CELL READ THRESHOLDS - A method for operating a memory ( | 04-15-2010 |
| 20100110787 | MEMORY CELL READOUT USING SUCCESSIVE APPROXIMATION - A method for operating a memory ( | 05-06-2010 |
| 20100115376 | AUTOMATIC DEFECT MANAGEMENT IN MEMORY DEVICES - A method for storing data in a memory ( | 05-06-2010 |
| 20100124088 | STORAGE AT M BITS/CELL DENSITY IN N BITS/CELL ANALOG MEMORY CELL DEVICES, M>N - A method for data storage includes accepting data for storage in a memory that includes multiple analog memory cells and supports a set of built-in programming commands. Each of the programming commands programs a respective page, selected from a group of N pages, in a subset of the memory cells. The subset of the memory cells is programmed to store M pages of the data, M>N, by performing a sequence of the programming commands drawn only from the set. | 05-20-2010 |
| 20100131826 | ESTIMATION OF NON-LINEAR DISTORTION IN MEMORY DEVICES - A method for operating a memory ( | 05-27-2010 |
| 20100131827 | MEMORY DEVICE WITH INTERNAL SIGNAP PROCESSING UNIT - A method for operating a memory ( | 05-27-2010 |
| 20100157641 | MEMORY DEVICE WITH ADAPTIVE CAPACITY - A method for data storage in a memory ( | 06-24-2010 |
| 20100157675 | PROGRAMMING ORDERS FOR REDUCING DISTORTION IN ARRAYS OF MULTI-LEVEL ANALOG MEMORY CELLS - A method for data storage includes predefining an order of programming a plurality of analog memory cells that are arranged in rows. The order specifies that for a given row having neighboring rows on first and second sides, the memory cells in the given row are programmed only while the memory cells in the neighboring rows on at least one of the sides are in an erased state, and that the memory cells in the given row are programmed to assume a highest programming level, which corresponds to a largest analog value among the programming levels of the cells, only after programming all the memory cells in the given row to assume the programming levels other than the highest level. Data is stored in the memory cells by programming the memory cells in accordance with the predefined order. | 06-24-2010 |
| 20100165689 | REJUVENATION OF ANALOG MEMORY CELLS - A method for data storage in a memory that includes multiple analog memory cells fabricated using respective physical media, includes identifying a group of the memory cells whose physical media have deteriorated over time below a given storage quality level. A rejuvenation process, which causes the physical media of the memory cells in the group to meet the given storage quality level, is applied to the identified group. Data is stored in the rejuvenated group of the memory cells. | 07-01-2010 |
| 20100165730 | READING MEMORY CELLS USING MULTIPLE THRESHOLDS - A method for operating a memory ( | 07-01-2010 |
| 20100195390 | MEMORY DEVICE WITH NEGATIVE THRESHOLDS - A method for data storage in a memory that includes a plurality of analog memory cells includes storing data in the memory by writing first storage values to the cells. One or more read reference levels are defined for reading the cells, such that at least one of the read reference levels is negative. After storing the data, second storage values are read from the cells using the read reference levels, so as to reconstruct the stored data. In another disclosed method, data is stored in the memory by mapping the data to first storage values selected from a set of the nominal storage values, and writing the first storage values to the cells. The set of nominal storage values is defined such that at least one of the nominal storage values is negative. | 08-05-2010 |
| 20100199150 | Data Storage In Analog Memory Cell Arrays Having Erase Failures - A method for data storage includes performing an erasure operation on a group of analog memory cells ( | 08-05-2010 |
| 20100220509 | Selective Activation of Programming Schemes in Analog Memory Cell Arrays - A method for data storage includes defining a first programming scheme that programs a group of analog memory cells while reducing interference caused by at least one memory cell that neighbors the group, and a second programming scheme that programs the group of the analog memory cells and does not reduce all of the interference reduced by the first programming scheme. One of the first and second programming schemes is selected based on a criterion defined with respect to the analog memory cells. Data is stored in the group of the analog memory cells using the selected programming scheme. | 09-02-2010 |
| 20100220510 | Optimized Selection of Memory Chips in Multi-Chips Memory Devices - A method includes accepting a definition of a type of multi-unit memory device ( | 09-02-2010 |
