Patent application number | Description | Published |
20080206462 | BATCH DEPOSITION SYSTEM USING A SUPERCRITICAL DEPOSITION PROCESS - A batch deposition chamber for use in a supercritical deposition process is divided into a plurality of compartments each adapted to receive therein a wafer. A supercritical fluid is introduced into the compartments at the same flow rate via respective feed tubes for depositing a film on the wafers. Each of the ambient temperature and the surface temperature of the wafers is controlled at the same temperature among all the wafers by using temperature sensors provided for the respective wafers and a temperature controller. | 08-28-2008 |
20080311295 | Film deposition processing apparatus and film deposition processing method - A film deposition processing apparatus and a film deposition method for forming a uniform film on a surface of a fine structure formed on a wafer using a supercritical fluid as a medium are provided. Film deposition is performed using a film deposition processing apparatus, comprising: a film deposition processing chamber; a holder which holds the wafer on a top surface inside the film deposition processing chamber; a heater which heats the wafer held on the top surface inside the film deposition processing chamber and is embedded in an upper portion of the film deposition processing chamber; a stirrer which stirs an inside of the film deposition processing chamber; a mixer which prepares a precursor solution made by dissolving at least one of precursors in the supercritical fluid; and a precursor solution inlet which introduces the precursor solution inside the film deposition processing chamber. | 12-18-2008 |
20090020068 | METHOD OF MANUFACTURING OF SUBSTRATE - A method of manufacturing a substrate is provided for readily processing a substrate in the presence of a supercritical fluid in a deposition step, an etching step, a resist peeling step and the like. The method of manufacturing a substrate of the present invention is a method of manufacturing a substrate for processing a surface of the substrate by filling a liquid fluid in a reaction chamber in which the substrate is placed, and reacting a precursor solved in the liquid fluid in the vicinity of the surface of the substrate, wherein the substrate is placed on a ceiling of the reaction chamber with the surface of the substrate oriented downward. | 01-22-2009 |
20090092856 | APPARATUS FOR FEEDING SOLID FILM-FORMATION MATERIAL - A solid film-formation material feeding apparatus includes a supercritical fluid supply source for supplying supercritical fluid; and a column which is connected to the supercritical fluid supply source, and has a hollow part which is filled with a filler which is inactive for the supercritical fluid, wherein the hollow part can be further filled with a solid film-formation material which is soluble in the supercritical fluid. A column assembly which includes a plurality of the columns which may be connected in parallel to each other. | 04-09-2009 |
20110244628 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes: supplying a supercritical fluid mixed with an under-fill material to a stacked unit, which has a plurality of stacked semiconductor chips; and filling the under-fill material in the space between the plurality of the semiconductor chips, by heating the stacked unit placed in the inside of the high-pressure vessel and curing the under-fill material flowing in the space between the plurality of the semiconductor chips by a polymerization reaction, while the supercritical fluid is being supplied. | 10-06-2011 |
20110309499 | METHOD OF MANUFACTURING DEVICES - A method of manufacturing a device includes forming a covering layer having affinity for a filler to be injected into a space between a first base and a second base, on at least one of the opposing surfaces of the first base and the second base, and then injecting the filler into the space between the first base and the second base. | 12-22-2011 |
20120071001 | VAPORIZING AND FEED APPARATUS AND VAPORIZING AND FEED METHOD - A vaporizing and feed apparatus for vaporizing and feeding a solid film-forming raw material comprises a supercritical fluid feeding part for producing and feeding a supercritical fluid, a supercritical fluid adjusting part for dissolving the solid film-forming raw material in the supercritical fluid by bringing the supercritical fluid fed from the supercritical fluid feeding part into contact with the solid film-forming raw material, and a vaporizing part for phase-transitioning the supercritical fluid having the dissolved solid film-forming raw material to a gas, the solid film-forming raw material thereby being deposited in the gas, and for vaporizing the deposited solid film-forming raw material. | 03-22-2012 |
20130147013 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device comprises a conductor film and a capacitor comprising a lower electrode provided on the conductor film. The conductor film includes a first conductive film containing a first metal, a second conductive film containing a second metal on the first conductive film, and an oxide film of the second metal on the second conductive film. The oxide film of the second metal has a lower electric resistivity than an oxide film of the first metal. | 06-13-2013 |
20140038424 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A polyimide film is effectively formed on a complicated surface. The polyimide film is formed by reacting, on the surface, diamine monomer and tetracarboxylic acid dianhydride monomer both of which are dissolved within carbon dioxide in a supercritical states, together with a polyamic acid resulting from a reaction between the diamine monomer and the tetracarboxylic acid dianhydride reached to the surface. | 02-06-2014 |
20140087518 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes: supplying a supercritical fluid mixed with an under-fill material to a stacked unit, which has a plurality of stacked semiconductor chips; and filling the under-fill material in the space between the plurality of the semiconductor chips, by heating the stacked unit placed in the inside of the high-pressure vessel and curing the under-fill material flowing in the space between the plurality of the semiconductor chips by a polymerization reaction, while the supercritical fluid is being supplied. | 03-27-2014 |
20150072501 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device comprises a conductor film and a capacitor comprising a lower electrode provided on the conductor film. The conductor film includes a first conductive film containing a first metal, a second conductive film containing a second metal on the first conductive film, and an oxide film of the second metal on the second conductive film. The oxide film of the second metal has a lower electric resistivity than an oxide film of the first metal. | 03-12-2015 |