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| 20090114535 | Ruthenium-Alloy Sputtering Target - Provided is a ruthenium alloy sputtering target as a ruthenium alloy sintered compact target obtained by sintering mixed powder of ruthenium powder and metal powder capable of creating oxides easier than ruthenium, wherein purity of the target excluding gas components is 99.95 wt % or higher, said target contains 5 at % to 60 at % of metal capable of creating oxides easier than ruthenium, relative density is 99% or higher, and oxygen content as impurities is 1000 ppm or less. This ruthenium alloy sputtering target is capable of reducing its oxygen content, reducing the generation of arcing and particles during sputtering, increasing the target strength by improving the sintered density, and improving the deposition quality by strictly restricting the amount of B and P impurities in the target in order to prevent the compositional variability of B and P added in minute amounts to the Si semiconductor. | 05-07-2009 |
| 20090134021 | Sputtering Target - Provided is a tantalum or a tantalum alloy target capable of shortening the burn-in time and minimizing the fluctuation in the deposition speed throughout the target life, whereby the production efficiency of semiconductors in the sputtering process can be improved and stabilized, and the production cost can be significantly reduced. With tantalum or tantalum-based alloy sputtering target, provided is a sputtering target, wherein FWHM (full width of half maximum) of a {200} crystal plane measured by X-ray diffraction of the sputtered outermost surface is 0.1 to 0.6, or a sputtering target according to claim | 05-28-2009 |
| 20090277788 | Sputtering Target/Backing Plate Bonded Body - Provided is a sputtering target/backing plate assembly having a structure such that pure copper is embedded in a backing plate position at the central portion of the target, within sputtering target/copper-zinc alloy backing plate bonded bodies. Consequently, provided is a simple structure of sputtering target/backing plate capable of sufficiently accommodating further high-power sputtering without deteriorating the characteristics of a copper-zinc alloy backing plate that is inexpensive and excels in strength and anti-eddy current characteristics. | 11-12-2009 |
| 20100221170 | Iron Silicide Powder and Method for Production Thereof - Provided is iron silicide powder in which the content of oxygen as the gas component is 1500 pppm or less, and a method of manufacturing such iron silicide powder including the steps of reducing iron oxide with hydrogen to prepare iron powder, heating the iron powder and Si powder in a non-oxidizing atmosphere to prepare synthetic powder containing FeSi as its primary component, and adding and mixing Si powder once again thereto and heating this in a non-oxidizing atmosphere to prepare iron silicide powder containing FeSi | 09-02-2010 |
| 20110044838 | Iron Silicide Sputtering Target and Method for Production Thereof - An iron silicide sputtering target in which the oxygen as a gas component in the target is 1000 ppm or less and a method of manufacturing such an iron silicide sputtering target are provided. The method includes the steps of melting/casting high purity iron and silicon under high vacuum to prepare an alloy ingot, subjecting the ingot to gas atomization with inert gas to prepare fine powder, and thereafter sintering the fine powder. The amount of impurities in the target will be reduced, the thickness of a βFeSi | 02-24-2011 |
| 20110094879 | Tungsten Sintered Sputtering Target - Provided is a tungsten sintered sputtering target, wherein the phosphorus content is 1 wtppm or less and the remainder is other unavoidable impurities and tungsten. The inclusion of phosphorus heavily affects the abnormal grain growth of tungsten and the deterioration in the target strength. In particular, if phosphorus is contained in an amount exceeding 1 ppm, crystal grains subject to abnormal grain growth will exist in the tungsten target. Thus, the object is to prevent the abnormal grain growth of tungsten and improve the product yield of the target by strongly recognizing the phosphorus contained in the tungsten as a harmful impurity and controlling the inclusion thereof to be as low as possible. | 04-28-2011 |
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| 20090007045 | METHOD OF DESIGNING A SEMICONDUCTOR DEVICE - Aiming at providing a method of designing a semiconductor device capable of producing a semiconductor device which expresses performances adapted to required performances, the present invention sets a plurality of suites of device parameters, containing parameters relevant to transistor characteristics (transistor parameters) and parameters relevant to interconnect characteristics (interconnect parameters) corresponded to the transistor characteristics, for a single CMOS generation, selecting, out of the plurality of suites, a suite matched to performances required for a semiconductor to be designed, and designing the semiconductor device. | 01-01-2009 |
| 20100301488 | Semiconductor device - In a semiconductor device, a lower multi-layered interconnect structure, an intermediate via-level insulating interlayer, and an upper multi-layered interconnect structure are stacked in this order in a region overlapped with a bonding pad in a plan view; upper interconnects and vias of the upper multi-layered interconnect structure are formed so as to be connected to the bonding pad in the pad placement region; the intermediate via-level insulating interlayer has no electro-conductive material layer, which connect the interconnects or vias in the upper multi-layered interconnect structure with interconnects or vias in the lower multi-layered interconnect structure, formed therein; and the ratio of area occupied by the vias in the via-level insulating interlayers contained in the lower multi-layered interconnect structure is smaller than the ratio of area occupied by the vias in the via-level insulating interlayers contained in the upper multi-layered interconnect structure. | 12-02-2010 |
| 20100314777 | Semiconductor device and method for manufacturing same - A semiconductor device includes: a semiconductor substrate; an interlayer insulating film provided on the semiconductor substrate; an interconnect (second interconnect trench) composed of a metallic film provided in an interconnect trench (second copper interconnect) and a plug composed of a metallic film provided in a connection hole (via hole) coupled to the second interconnect trench, both of which are provided in the interlayer insulating film; a first sidewall provided on a side surface of the via hole; and a second sidewall provided on a side surface of the second interconnect trench, and a thickness of the first sidewall in vicinity of a bottom of the side surface of the via hole is larger than a thickness of the second sidewall in vicinity of a bottom of the second interconnect trench. | 12-16-2010 |
| 20110049719 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - The semiconductor device includes a first interconnect layer insulating film, first copper interconnects that are embedded in the first interconnect layer insulating film, and an interlayer insulating film that is formed on the first copper interconnects and the first interconnect layer insulating film. The semiconductor device includes a second interconnect layer insulating film that is formed on the interlayer insulating film and second copper interconnects that are embedded in the second interconnect layer insulating film. The first and second interconnect layer insulating films include first and second low dielectric constant films, respectively. The interlayer insulating film has higher mechanical strength than the first and second interconnect layer insulating films. | 03-03-2011 |
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| 20080221802 | Method of Proteome Analysis for Phosphorylated Protein - A method for detecting plural types of phosphorylated proteins in a sample, wherein a database consisting of data regarding plural types of proteins in the sample is used; and a method for purifying phosphorylated proteins using an immobilized metal carrier or a titania carrier, wherein a solution containing acetonitrile in a range of 40% (v/v) or greater but 60% (v/v) or less is used. | 09-11-2008 |
| 20090148960 | Method for analysis of compound-binding ability of protein - The present invention provides a method for analyzing a binding ability of protein to a compound, comprising the steps of (a) fractionating a first group of isotope-labeled proteins into plural fractions using a carrier having the compound immobilized thereon; (b) fractionating a second group of proteins into one or plural fractions using a carrier having the compound immobilized thereon; (c) adding a certain amount of the one fraction obtained in step (b), or a certain amount of a mixture of all the fractions or a mixture of plural contiguous fractions among the fractions obtained in step (b), to each of the fractions obtained in step (a); (d) analyzing the fractions obtained in step (c) with mass spectrometry; and (e) based on the mass spectrometry information, obtaining, regarding each fraction, an intensity ratio between a peak derived from a protein in the fraction obtained in step (a) and a peak derived from a protein in the fraction obtained in step (b), and comparing degrees of the binding ability of the plural kinds of proteins to the compound. | 06-11-2009 |
| 20110065202 | Method for Examination of Alzheimer's Disease - A method for examining Alzheimer's disease comprising (1) the measurement step of measuring an amount of lidocaine or a metabolite thereof in a cerebrospinal fluid derived from a lidocaine-administered test subject, and (2) the determination step of determining whether the test subject has Alzheimer's disease or not on the basis of the measured amount. | 03-17-2011 |
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| 20100183733 | HAIR GROWTH-INHIBITING AGENT - A hair removing agent or a hair growth inhibiting agent is provided by determining an endogenous factor having a hair growth inhibitory activity, screening for substances having an activity similar to that of the endogenous factor or substances enhancing the activity or expression of the endogenous factor, and utilizing the physiological activities of such substances. It has been found that FGF18 inhibits hair growth. A method of screening for FGF18-like active substances, substances that promote the activity of FGF18 or substances that promote the expression of FGF18 to thereby obtain candidates for the hair growth inhibiting agent or hair removing agent is disclosed. Also disclosed is a hair growth inhibiting agent or a hair removing agent comprising, as an active ingredient, FGF18 and/or an FGF18 partial peptide, or an FGF18-like active substance and/or a substance that promotes the activity or expression of FGF18 (e.g., Digenea simplex extract). | 07-22-2010 |
| 20100203055 | HAIR REGROWTH PROMOTER - It is intended to provide a hair growth promoting agent, hair regrowth promoting agent or therapeutic for alopecia by determining an endogenous factor that inhibits hair growth and screening for substances that inhibit the activity or expression of the endogenous factor. It has been found that FGF18 inhibits hair growth. A method of screening for substances that inhibit the activity of FGF18 or substances that inhibit the expression of FGF18 to thereby obtain candidates for the hair growth promoting agent, hair regrowth promoting agent or therapeutic for alopecia is disclosed. Also disclosed is a hair growth promoting agent, hair regrowth promoting agent or therapeutic for alopecia comprising, as an active ingredient(s), a substance that inhibit the activity of FGF18 and/or a substance that inhibits the expression of FGF18 such as a partial peptide of FGF18 or a | 08-12-2010 |
