Patent application number | Description | Published |
20120168717 | LIGHT EMITTING DIODE, LIGHT EMITTING DIODE LAMP, AND ILLUMINATING APPARATUS - Disclosed is a light-emitting diode, which has a red and infrared emitting wavelength, excellent monochromatism characteristics, and high output and high efficiency and excellent humidity resistance. The light-emitting diode is provided with: a light-emitting section, which includes an active layer having a quantum well structure and formed by laminating alternately a well layer which comprises a composition expressed by the composition formula of (Al | 07-05-2012 |
20120168782 | LIGHT EMITTING DIODE, LIGHT EMITTING DIODE LAMP, AND ILLUMINATING APPARATUS - Disclosed is a light-emitting diode, which has an infrared emission wavelength of 700 nm or more, excellent monochromatism characteristics, and high output and high efficiency and excellent humidity resistance. The light-emitting diode is provided with: a light-emitting section ( | 07-05-2012 |
20120305890 | LIGHT-EMITTING DIODE, LIGHT-EMITTING DIODE LAMP AND LIGHTING DEVICE - A light-emitting diode, including a light emitting section including an active layer having a quantum well structure in which well layers having the composition: (In | 12-06-2012 |
20130134390 | LIGHT-EMITTING DIODE, LIGHT-EMITTING DIODE LAMP, AND ILLUMINATION DEVICE - A light-emitting diode of the present invention includes a light-emitting unit, containing an active layer having a quantum well structure prepared by alternately stacking a well layer and a barrier layer each formed from a compound semiconductor having a composition formula of (Al | 05-30-2013 |
20130248819 | LIGHT-EMITTING DIODE, LIGHT-EMITTING DIODE LAMP, AND ILLUMINATION DEVICE - The invention provides a light-emitting diode, a light-emitting diode lamp, and an illumination device which emit infrared light with both high-speed response and high output performance. The invention relates to a light-emitting diode including a light-emitting portion which has an active layer of a quantum well structure, in which a well layer made of a compound semiconductor having a composition formula (In | 09-26-2013 |
20140124733 | LIGHT EMITTING DIODE, LIGHT EMITTING DIODE LAMP, AND ILLUMINATING APPARATUS - Disclosed is a light-emitting diode, which has a red and infrared emitting wavelength, excellent monochromatism characteristics, and high output and high efficiency and excellent humidity resistance. The light-emitting diode is provided with: a light-emitting section, which includes an active layer having a quantum well structure and formed by laminating alternately a well layer which comprises a composition expressed by the composition formula of (Al | 05-08-2014 |
20140291612 | LIGHT-EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - A light-emitting diode and method of manufacturing the same, including a flat portion and a mesa structure including an inclined side surface formed by wet etching and a top surface. A protective film and an electrode film sequentially cover a part of the flat portion and at least a part of the mesa structure, the protective film including an electrical conduction window arranged around a light emission hole and from which a compound semiconductor layer is exposed. The electrode film is a continuous film that contacts the surface of the exposed compound semiconductor layer, covers a portion of the protective film formed on the flat portion, and has the light emission hole on the top surface. A transparent film is formed between a reflecting layer and a compound semiconductor layer. A through-electrode is provided in a range of the transparent film which overlaps the light emission hole. | 10-02-2014 |
20150034900 | LIGHT-EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - A light-emitting diode and manufacturing method, including a flat portion and a mesa structure. An inclined side surface is formed by wet etching such that a cross-sectional area of the mesa structure is continuously reduced toward a top surface. A protective film covers the flat portion, the inclined side surface, and a peripheral region of the top surface of the mesa structure. The protective film includes an electrical conduction window arranged around a light emission hole and from which a compound semiconductor layer is exposed. A continuous electrode film contacts the exposed compound semiconductor layer, covers the protective film formed on the flat portion, and has the light emission hole on the top surface. A transparent conductive film is formed between a reflecting layer and the layer at a position that corresponds to the electrical conduction window and in a range surrounded by the electrical conduction window. | 02-05-2015 |