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Noritaka Muraki
Noritaka Muraki, Chichibu-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090267103 | GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREOF - The invention provides a gallium nitride based compound semiconductor light emitting device with excellent light extracting efficiency and its production method. A light emitting device, obtained from a gallium nitride based compound semiconductor, includes a substrate; a n-type semiconductor layer | 10-29-2009 |
| 20100230714 | METHOD FOR PRODUCING GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE, GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE, AND LAMP USING THE SAME - A method for producing a gallium nitride based compound semiconductor light emitting device that is excellent in terms of light emission efficiency and is also capable of operating at a low driving voltage, a gallium nitride based compound semiconductor light emitting device, and a lamp using the device are provided, and the method for producing a gallium nitride based compound semiconductor light emitting device includes a first crystal growth step in which an n-type semiconductor layer | 09-16-2010 |
Noritaka Muraki, Ichihara-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20080315237 | Gallium Nitride-Based Compound Semiconductor Light Emitting Device - This gallium nitride-based compound semiconductor light emitting device includes an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer that are composed of gallium nitride-based compound semiconductors and are deposited in that order on a substrate, and further includes a negative electrode and a positive electrode that are in contact with the n-type semiconductor layer and the p-type semiconductor layer, respectively, wherein the positive electrode has a translucent electrode composed of a three-layer structure including a contact metal layer that contacts at least the p-type semiconductor layer, a current diffusion layer provided on the contact metal layer and having conductivity greater than that of the contact metal layer, and a bonding pad layer provided on the current diffusion layer, and a mixed positive electrode-metal layer including a metal that forms the contact metal layer is present in a positive electrode side surface of the p-type semiconductor layer. | 12-25-2008 |
| 20100176418 | GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE - An object of the present invention is to provide a gallium nitride-based compound semiconductor light emitting device having superior light extraction efficiency and light distribution uniformity. | 07-15-2010 |
Noritaka Muraki, Chiba JP
| Patent application number | Description | Published |
|---|---|---|
| 20090045434 | GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE - A gallium nitride-based compound semiconductor light-emitting device including a positive electrode having openings, which is excellent in light extraction efficiency. The gallium nitride-based compound semiconductor light-emitting device includes a substrate; an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer, the layers being formed of a gallium nitride-based compound semiconductor and being stacked in this order on the substrate; a positive electrode which is provided so as to contact the p-type semiconductor layer; and a negative electrode which is provided so as to contact the n-type semiconductor layer, where the positive electrode is a positive electrode having openings, and at least a portion of the surface of the p-type semiconductor layer corresponding to the openings are roughened surface derived from spherical particulates. | 02-19-2009 |
| 20090152585 | GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE - It is an object of the present invention to provide a gallium nitride-based compound semiconductor light-emitting device that is excellent in light output efficiency and needs only a low driving voltage (Vf). The inventive gallium nitride-based compound semiconductor light-emitting device includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer formed of a gallium nitride-based compound semiconductor and stacked in this order on a substrate, and positive and negative electrodes so arranged as to be in contact with the p-type semiconductor layer and the n-type semiconductor layer, respectively, wherein a region in which a p-type impurity and hydrogen atoms are co-present exists in the p-type semiconductor layer in contact with the positive electrode, and at least a portion, which is in contact with the p-type semiconductor layer, of the positive electrode, is formed of an n-type electro-conductive light transmitting material. | 06-18-2009 |
| 20090184329 | Positive electrode for semiconductor light-emitting device - An object of the present invention is to provide a transparent positive electrode for use in a face-up-type chip which can emit intense light even using a low drive voltage. | 07-23-2009 |
| 20090212319 | GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE - An object of the present invention is to provide a gallium nitride-based compound semiconductor light emitting device having excellent light extraction efficiency and a high emission output in which a planar shape is a rectangular shape with vertical and longitudinal sides each having a different length. | 08-27-2009 |