| Patent application number | Description | Published |
|---|
| 20090296454 | MAGNETIC MEMORY CELL AND MAGNETIC RANDOM ACCESS MEMORY - A magnetic memory cell | 12-03-2009 |
| 20100046288 | MAGNETIC RANDOM ACCESS MEMORY AND METHOD OF MANUFACTURING THE SAME - An MRAM according to the present invention has a pinned layer | 02-25-2010 |
| 20100096715 | MAGNETIC RANDOM ACCESS MEMORY - A magnetic recording layer | 04-22-2010 |
| 20100110777 | MAGNETIC RANDOM ACCESS MEMORY - An MRAM according to the present invention has a magnetoresistance element | 05-06-2010 |
| 20100142264 | MAGNETIC MEMORY CELL, MAGNETIC RANDOM ACCESS MEMORY, AND DATA READ/WRITE METHOD FOR MAGNETIC RANDOM ACCESS MEMORY - The present invention provides a new data writing method for an MRAM which can suppress deterioration of a tunnel barrier layer. | 06-10-2010 |
| 20100149862 | MAGNETIC RANDOM ACCESS MEMORY - A magnetic random access memory comprises a magnetic recording layer equipped with a magnetization reversal region having a reversible magnetization and through which a write current is made to flow in the in-plane direction, a magnetization fixed layer having a fixed magnetization, a nonmagnetic layer provided between the magnetization reversal region and the magnetization fixed layer, and a heat absorbing structure provided opposing to the magnetic recording layer and having a function of receiving heat generated in the magnetic recording layer and of radiating the heat. Such magnetic random access memory can radiate heat generated in the magnetic recording layer by using the heat absorbing structure and prevent temperature rising caused by the write current flowing in the in-plane direction. | 06-17-2010 |
| 20100193889 | MAGNETIC RANDOM ACCESS MEMORY AND METHOD OF MANUFACTURING THE SAME - A domain wall motion type MRAM | 08-05-2010 |
| 20100193890 | MAGNETIC DOMAIN WALL RANDOM ACCESS MEMORY - A magnetic random access memory includes: a magnetic recording layer including a ferromagnetic layer and having perpendicular magnetic anisotropy; and a magnetic reading layer provided on the magnetic recording layer and used for reading information. The magnetic recording layer includes: a magnetization switching area having reversible magnetization; a first magnetization pinned area connected to a first boundary of the magnetization switching area and having magnetization whose direction is pinned in a first direction; and a second magnetization pinned area connected to a second boundary of the magnetization switching area and having magnetization whose direction is pinned in a second direction. The magnetic reading layer includes: a magnetic sensing layer whose direction of magnetization changes based on a direction of the magnetization of the magnetization switching area; a nonmagnetic barrier layer provided on the magnetic sensing layer; and a pinned layer provided on the nonmagnetic barrier layer. | 08-05-2010 |
| 20100214826 | MAGNETIC RANDOM ACCESS MEMORY, WRITE METHOD THEREFOR, AND MAGNETORESISTANCE EFFECT ELEMENT - A magnetic random access memory includes: a first ferromagnetic layet; an insulating layer provided adjacent to the first ferromagnetic layer; and a first magnetization pinned layer provided adjacent to the insulating layer on a side opposite to the first ferromagnetic layer. The first ferromagnetic layer includes a magnetization free region, a first magnetization pinned region, and a second magnetization pinned region. The magnetization free region has reversible magnetization, and overlaps with the second ferromagnetic layer. The first magnetization pinned region has first pinned magnetization, and is connected to a part of the magnetization free region. The second magnetization pinned region has second pinned magnetization, and is connected to a part of the magnetization free region. The first ferromagnetic layer has magnetic anisotropy in a direction perpendicular to a film surface. The first pinned magnetization and the second pinned magnetization are pinned antiparallel to each other in the direction perpendicular to the film surface. | 08-26-2010 |
| 20100237449 | MAGNETORESISTIVE ELEMENT, AND MAGNETIC RANDOM ACCESS MEMORY - A magnetoresistive element is provided with a first magnetization free layer; a second magnetization free layer; a non-magnetic layer disposed adjacent to the second magnetization free layer; and a first magnetization fixed layer disposed adjacent to the second magnetization free layer on an opposite side of the second magnetization free layer. The first magnetization free layer is formed of ferromagnetic material and has a magnetic anisotropy in a thickness direction. On the other hand, the second magnetization free layer and the first magnetization fixed layer are formed of ferromagnetic material and have a magnetic anisotropy in an in-plane direction. The first magnetization free layer includes: a first magnetization fixed region having a fixed magnetization; a second magnetization fixed region having a fixed magnetization; and a magnetization free region connected to the first and second magnetization fixed regions and having a reversible magnetization. The magnetization free region and the second magnetization free layer are magnetically coupled. In addition, the center of mass of the magnetization free region and the center of mass of the second magnetization free layer are displaced in a particular in-plane direction. | 09-23-2010 |
| 20100254183 | MAGNETORESISTANCE EFFECT ELEMENT AND MAGETIC RANDOM ACCESS MEMORY - A magnetoresistance effect element has: a first magnetization fixed layer whose magnetization direction is fixed; a first magnetization free layer whose magnetization direction is variable; a first nonmagnetic layer sandwiched between the first magnetization fixed layer and the first magnetization free layer; a second magnetization fixed layer whose magnetization direction is fixed; a second magnetization free layer whose magnetization direction is variable; and a second nonmagnetic layer sandwiched between the second magnetization fixed layer and the second magnetization free layer. The first magnetization fixed layer and the first magnetization free layer have perpendicular magnetic anisotropy, while the second magnetization fixed layer and the second magnetization free layer have in-plane magnetic anisotropy. The first magnetization free layer and the second magnetization free layer are magnetically coupled to each other. In a plane parallel to each layer, center of the second magnetization free layer is displaced from center of the first magnetization free layer. | 10-07-2010 |
| 20100309712 | MAGNETIC RANDOM ACCESS MEMORY - An MRAM has: a memory cell including a first magnetoresistance element; and a reference cell including a second magnetoresistance element. The first magnetoresistance element has a first magnetization free layer, a first magnetization fixed layer, a second magnetization free layer and a first nonmagnetic layer sandwiched between the first magnetization fixed layer and the second magnetization free layer. The first magnetization free layer has perpendicular magnetic anisotropy, and the first magnetization fixed layer and the second magnetization free layer has in-plane magnetic anisotropy. The first magnetization free layer has: first and second magnetization fixed regions whose magnetization directions are fixed; and a magnetization free region whose magnetization direction is reversible and connected to the first and second magnetization fixed regions. The magnetization free region and the second magnetization free layer are magnetically coupled to each other. In a plane parallel to each layer, center of the second magnetization free layer is displaced in a first direction from center of the magnetization free region. Whereas, the second magnetoresistance element has: a third magnetization free layer whose magnetization easy axis is parallel to a second direction; a second magnetization fixed layer whose magnetization direction is fixed in a third direction perpendicular to the second direction; and a second nonmagnetic layer sandwiched between the second magnetization fixed layer and the third magnetization free layer. The second magnetization fixed layer and the third magnetization free layer have in-plane magnetic anisotropy. | 12-09-2010 |
| 20100309713 | MAGNETIC RANDOM ACCESS MEMORY - An MRAM has: a memory cell including a first magnetoresistance element; and a reference cell including a second magnetoresistance element. The first magnetoresistance element has a first magnetization fixed layer, a first magnetization free layer, a first nonmagnetic layer sandwiched between the first magnetization fixed layer and the first magnetization free layer, a second magnetization fixed layer, a second magnetization free layer and a second nonmagnetic layer sandwiched between the second magnetization fixed layer and the second magnetization free layer. The first magnetization fixed layer and the first magnetization free layer have perpendicular magnetic anisotropy, and the second magnetization fixed layer and the second magnetization free layer have in-plane magnetic anisotropy. The first magnetization free layer and the second magnetization free layer are magnetically coupled to each other. Center of the second magnetization free layer is displaced in a first direction from center of the first magnetization free layer in a plane parallel to each layer. Whereas, the second magnetoresistance element has: a third magnetization free layer whose magnetization easy axis is parallel to a second direction; a third magnetization fixed layer whose magnetization direction is fixed in a third direction perpendicular to the second direction; and a third nonmagnetic layer sandwiched between the third magnetization fixed layer and the third magnetization free layer. The third magnetization fixed layer and the third magnetization free layer have in-plane magnetic anisotropy. | 12-09-2010 |
| 20100315854 | MAGNETIC RANDOM ACCESS MEMORY AND INITIALIZING METHOD FOR THE SAME - A domain wall motion type MRAM has: a magnetic recording layer | 12-16-2010 |
| 20110002163 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first magnetic random access memory including a first memory cell and a second magnetic random access memory including a second memory cell operating at higher speed than the first memory cell and is provided on the same chip together with the first magnetic random access memory. The first memory cell is a current-induced domain wall motion type MRAM and stores data based on a domain wall position of a magnetization free layer. A layer that a write current flows is different from a layer that a read current flows. The second memory cell is a current-induced magnetic field writing type MRAM and stores data based on a magnetic field induced by a write current. | 01-06-2011 |
| 20110129691 | DOMAIN WALL MOTION ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY - A domain wall motion element has a magnetic recording layer 10 that is formed of a ferromagnetic film and has a domain wall DW. The magnetic recording layer | 06-02-2011 |
