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Norikazu Ito
Norikazu Ito, Higashiomi-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20110135843 | Deposited Film Forming Device and Deposited Film Forming Method - In order to form a high-quality Si-based film at high speed, for example, a deposited film forming device according to one aspect of the present invention includes: a chamber; a first electrode arranged in the chamber; and a second electrode arranged in the chamber and spaced a certain distance from the first electrode. The second electrode includes first and second supplying parts. The first supplying part supplies a first material gas and generates hollow cathode discharge. The second supplying part supplies a second material gas higher in decomposition rate than the first material gas. | 06-09-2011 |
Norikazu Ito, Kyoto JP
| Patent application number | Description | Published |
|---|---|---|
| 20090014839 | Nitride-Based Semiconductor Device - A nitride-based semiconductor device includes: an n-GaN layer | 01-15-2009 |
| 20090166607 | Nitride Semiconductor Light Emitting Element - Provided is a nitride semiconductor light emitting element having an improved carrier injection efficiency from a p-type nitride semiconductor layer to an active layer by simple means from a viewpoint utterly different from the prior art. A buffer layer | 07-02-2009 |
| 20090272992 | Semiconductor Light-Emitting Device and Process for Producing the Same - A semiconductor light emitting device of the present invention includes a substrate ( | 11-05-2009 |
| 20100065812 | Nitride semiconductor light emitting element - Provided is a nitride semiconductor light emitting element having an improved carrier injection efficiency from a p-type nitride semiconductor layer to an active layer by simple means from a viewpoint utterly different from the prior art. A buffer layer | 03-18-2010 |
| 20110272665 | Nitride semiconductor device - An inventive nitride semiconductor device includes: a substrate; a first buffer layer provided on the substrate, and having a superlattice structure which includes two types of Group III nitride semiconductor sublayers having different compositions and alternately stacked in pairs; a second buffer layer provided on the first buffer layer in contact with the first buffer layer, and having a superlattice structure which includes two types of Group III nitride semiconductor sublayers having different compositions and alternately stacked in pairs; and a device operation layer of a Group III nitride semiconductor provided on the second buffer layer; wherein an average lattice constant LC | 11-10-2011 |
Norikazu Ito, Kyoto-Fu JP
| Patent application number | Description | Published |
|---|---|---|
| 20100035410 | Method for Manufacturing InGaN - To provide a method for manufacturing InGaN which causes less segregation of In and achieves high crystallinity of an InGaN layer with the proportion of In increased. | 02-11-2010 |
Norikazu Ito, Kyoto-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090121240 | Nitride Semiconductor Device and Method for Manufacturing the Same - There is provided a nitride semiconductor device with low leakage current and high efficiency in which, while a zinc oxide based compound such as Mg | 05-14-2009 |
| 20090206357 | Semiconductor Light Emitting Device - There is provided a nitride semiconductor light emitting device in which a semiconductor layer is not broken easily even when a reverse voltage is applied or even in long time operation, and excellent reliability is obtained, by preventing semiconductor layers from deterioration when manufacturing a device. On a surface of a substrate ( | 08-20-2009 |
| 20090278144 | Nitride Semiconductor Light Emitting Device - There is provided a nitride semiconductor light emitting device having a light reflection layer capable of preventing reflectivity from lowering and luminance from lowering due to deterioration of quality of an active layer. A nitride semiconductor laser includes at least a light emitting layer forming portion ( | 11-12-2009 |
Norikazu Ito, Yokohama-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20110297089 | Method For Forming Thin Film And Apparatus Therefor - A plurality of antenna elements, each of which has first and second linear conductors whose first ends are electrically interconnected are formed. The antenna elements are arranged in plane in such a way that the first and second linear conductors are alternated and separated from one another at regular intervals, thereby forming one or more array antennas which are disposed in a chamber. The second ends of the first linear conductors are connected to a high-frequency power supply, and the second ends of the second linear conductors are connected to ground. A plurality of substrates are parallel placed on both sides of the array antennas at distances approximate to the distances between the linear conductors. A film is formed by introducing an ingredient gas into the chamber. | 12-08-2011 |
Norikazu Ito, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20120014139 | POWER CONVERTING APPARATUS - In a power converting apparatus which converts AC power into DC power, an inverter circuit including at least one series-connected single-phase inverter is connected in a downstream of a stage in which an AC input is rectified in series therewith. In the downstream stage of the inverter circuit, there are provided a smoothing capacitor connected via a rectifier diode and a short-circuiting switch for bypassing the smoothing capacitor. The short-circuiting switch is set to an ON state only in each of short-circuiting phase ranges of which midpoint matches each of zero-crossing phases and an output of the inverter circuit is controlled by using a current command so that a DC voltage of the smoothing capacitor follows a target voltage and an input power factor is improved. | 01-19-2012 |
Norikazu Ito, Shiga JP
| Patent application number | Description | Published |
|---|---|---|
| 20120100311 | APPARATUS FOR FORMING DEPOSITED FILM AND METHOD FOR FORMING DEPOSITED FILM - First and second electrodes are provided in a chamber. The second electrode includes a first part supplying a first gas to a space between the first electrode and the second electrode, a plurality of second parts supplying a second gas to the space, a first supply path of the first gas connected to the first part, and a second supply path of the second gas connected to the second parts. The second supply path includes a main part with a first inlet of the second gas, and a branch part including a plurality of gas flow paths with a second inlet of the second gas. A number of the second parts are connected to each of the gas flow paths. The main part and the branch part are structured so that the second material gas does not flow into the second parts from the first inlet as a straight flow. | 04-26-2012 |