| Patent application number | Description | Published |
|---|
| 20090170296 | METHOD AND APPARATUS FOR ACTIVATING COMPOUND SEMICONDUCTOR - A compound semiconductor is placed in a reaction vessel ( | 07-02-2009 |
| 20090218475 | Laser Annealing Apparatus and Method - The irradiation unevenness caused by drift occurring in a beam short-axis direction is reduced without adding a new beam shaping unit and affecting the propagation characteristic of a beam in an optical resonator. A position deviation detector for detecting a position deviation of a laser beam before passing through a beam shaping optical system, an angle deviation detector for detecting an angle deviation of the laser beam before passing through the beam shaping optical system, a deflection mirror for deflecting the laser beam, which is disposed in an optical path between a laser and an object (substrate), and a mirror controller for controlling orientation of the deflection mirror, based on detection data obtained using the position deviation detector and the angle deviation detector so as to eliminate the position deviation from a reference irradiation position in the short-axis direction of a linear beam on a surface to be irradiated. | 09-03-2009 |
| 20090238223 | Laser Irradiation Apparatus - A laser irradiation apparatus is provided in which the occurrence of adverse effects on an object to be irradiated with a laser beam due to the difference in the polarization state between pulsed laser beams can be prevented or significantly reduced when the pulsed laser beams emitted from two laser light sources are guided to pass through the same optical path for irradiation of an object to be irradiated with the pulsed laser beams. The laser irradiation apparatus is provided with a first laser light source | 09-24-2009 |
| 20100022102 | LASER ANNEALING METHOD AND DEVICE - A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction. | 01-28-2010 |
| 20100221898 | LASER ANNEALING METHOD AND LASER ANNEALING DEVICE - The energy distribution in the short-side direction of a rectangular laser beam applied to an amorphous semiconductor film (amorphous silicon film) is uniformized. It is possible to the energy distribution in the short-side direction of the rectangular laser beam by the use of a cylindrical lens array | 09-02-2010 |
| 20110008973 | LASER ANNEALING METHOD AND APPARATUS - In the case of a lens array type homogenizer optical system, the incident angle and intensity of a laser beam | 01-13-2011 |
| 20110086441 | LASER ANNEALING METHOD AND LASER ANNEALING APPARATUS - In laser annealing using a solid state laser, a focus position of a minor axial direction of a rectangular beam is easily corrected depending on positional variation of a laser irradiated portion of a semiconductor film. By using a minor-axis condenser lens | 04-14-2011 |
| 20110097907 | LASER ANNEALING METHOD AND APPARATUS - Disclosed are a laser annealing method and apparatus capable of forming a crystalline semiconductor thin film on the entire surface of a substrate without sacrificing the uniformity of crystallinity in a seam portion in a long-axis direction of laser light, the crystalline semiconductor thin film having good properties and high uniformity to an extent that the seam portion is not visually recognizable. | 04-28-2011 |
| 20110108535 | LASER ANNEALING APPARATUS - Provided is a laser annealing apparatus capable of reducing irradiation unevenness of laser light caused by a refraction phenomenon of laser light due to fluctuation in the temperature of inert gas. | 05-12-2011 |
| 20110114855 | LASER ANNEALING METHOD AND DEVICE - A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction. | 05-19-2011 |
| 20110163076 | METHOD AND APPARATUS FOR ACTIVATING COMPOUND SEMICONDUCTOR - A compound semiconductor is placed in a reaction vessel ( | 07-07-2011 |
