Patent application number | Description | Published |
20100004385 | SOLID POLYSILANCE MIXTURES - The invention is directed to mixtures of polysilanes macroscopically solid at ambient temperature wherein the individual components of the composition Si | 01-07-2010 |
20100155219 | PLASMA-ENHANCED SYNTHESIS - The invention is based on the aim of developing a device and a method for the plasma-enhanced synthesis of halogenated polysilanes and polygermanes, wherein at least one reaction partner is present in a gaseous form and is excited by reactive particles from a plasma zone, and is subsequently reacted by means of at least one further reaction partner which is present in the reaction chamber in vaporous or gaseous form. Reactions of halogen silanes or germanes of the group SiCl | 06-24-2010 |
20110132744 | PLASMA-ASSISTED ORGANOFUNCTIONALIZATION OF SILICON TETRAHALIDES OR ORGANOHALOSILANES - The invention relates to a method for the plasma-assisted synthesis of organohalosilanes in which organohalosilanes of the general empirical formula R | 06-09-2011 |
20110150740 | Halogenated Polysilane and Plasma-Chemical Process for Producing the Same - The present invention relates to a halogenated polysilane as a pure compound or a mixture of compounds each having at least one direct Si—Si bond, whose substituents consist exclusively of halogen or of halogen and hydrogen and in the composition of which the atomic ratio of substituent to silicon is at least 1:1. | 06-23-2011 |
20110284796 | Halogenated Polysilane and Thermal Process for Producing the Same - The present invention relates to a halogenated polysilane as a pure compound or mixture of compounds each having at least one direct Si—Si bond, whose substituents consist exclusively of halogen or of halogen and hydrogen and in whose composition the atomic ratio substituent:silicon is greater than 1:1. | 11-24-2011 |
20120027643 | Process and apparatus for generating hydrogen - A solution is to be created, with a method and a device for generating hydrogen, in which silicon and/or an alloy that contains silicon is reacted in a reaction vessel ( | 02-02-2012 |
20120313037 | CHLORIDE-CONTAINING SILICON - A chlorinated polysilane has the formula SiClx wherein x=0.01−0.8 and which can be produced by thermolysis of a chloropolysilane at a temperature below 600° C. | 12-13-2012 |
20120315392 | METHOD FOR PRODUCING HYDROGENATED POLYGERMASILANE AND HYDROGENATED POLYGERMASILANE - A process for preparing hydrogenated polygermasilane as a pure compound or mixture of compounds includes hydrogenating halogenated polygermasilane. | 12-13-2012 |
20120321540 | METHOD FOR PRODUCING OLIGOSILANES - A method for producing oligosilanes by reacting halogenated oligosilanes with a metal hydride includes a reaction occurring in the presence of a catalyst and an alkali metal halide, the catalyst including a halide of a multivalent metal; and the reaction occurs in an ethereal solution. | 12-20-2012 |
20130001467 | KINETICALLY STABLE CHLORINATED POLYSILANES AND PRODUCTION AND USE THEREOF - Kinetically stable halogenated polysilanes include mixture of compounds having respectively at least four silicon atoms bound together, the substituents thereof comprising chlorine, and chlorine and hydrogen, and in the composition thereof, the atomic ratio of substituent to silicon is at least 1:1, wherein a) the kinetically stable halogenated polysilanes have a kinetically high stability in relation to oxidative-splitting by chlorine, and the degree of conversion at temperatures of 120° C. within 10 hours with an excess of chlorine gas at 1013 hPa does not exceed 30 mol %, and b) the kinetically stable halogenated polysilanes have a percentage of branching points in the polysilane molecules of more than 8 mol %. | 01-03-2013 |
20130004666 | METHOD FOR PRODUCING HYDROGENATED POLYGERMANE AND HYDROGENATED POLYGERMANE - A process for preparing hydrogenated polygermane as a pure compound or mixture of compounds, including hydrogenating halogenated polygermane. | 01-03-2013 |
20130017138 | METHOD FOR PRODUCING HEXACHLORODISILANEAANM Auner; NorbertAACI GlashuettenAACO DEAAGP Auner; Norbert Glashuetten DEAANM Bauch; ChristianAACI MuldensteinAACO DEAAGP Bauch; Christian Muldenstein DEAANM Holl; SvenAACI GueckingenAACO DEAAGP Holl; Sven Gueckingen DEAANM Deltschew; RumenAACI LeipzigAACO DEAAGP Deltschew; Rumen Leipzig DEAANM Mohsseni; JavadAACI Bitterfeld-WolfenAACO DEAAGP Mohsseni; Javad Bitterfeld-Wolfen DEAANM Lippold; GerdAACI LeipzigAACO DEAAGP Lippold; Gerd Leipzig DEAANM Gebel; ThoralfAACI DresdenAACO DEAAGP Gebel; Thoralf Dresden DE - A method produces hexachlorodisilane. Hexachlorodisilane is obtained by oxidative splitting of the chlorinated polysilane of the empirical formula SiClx (x=0,2-0,8) using chlorine gas. The hexachlorodisilane is selectively obtained with a high yield. | 01-17-2013 |
20130039830 | METHOD FOR REMOVING IMPURITIES FROM SILICON - A method for removing impurities from silicon includes A) providing metallic silicon having impurities, B) mixing the metallic silicon with at least one halogenated polysilane of Formula SiX | 02-14-2013 |
20130039834 | METHOD FOR PRODUCING AMMONIA - A method produces ammonia by reacting N | 02-14-2013 |
20130043429 | CHLORINATED OLIGOGERMANES AND METHOD FOR THE PRODUCTION THEREOF - A chlorinated oligogermane as a pure compound or mixture of compounds which each have at least one direct Ge—Ge bond, substituents of which include chlorine or chlorine and hydrogen and atom ratio for substituent:germanium is at least 2:1 in the composition thereof, wherein a) the mixture has on average a Ge:Cl ratio of 1:1 to 1:3, or the pure compound has a Ge:Cl ratio of 1:2 to 1:2.67, and b) the mixture has an average number of germanium atoms of 2 to 8. | 02-21-2013 |
20130116472 | PROCESS FOR PREPARING UREA - A method of producing urea includes reacting SiO | 05-09-2013 |
20130214243 | NANOWIRES MADE OF NOVEL PRECURSORS AND METHOD FOR THE PRODUCTION THEREOF - The invention relates to nanowires which consist of or comprise semiconductor materials and are used for applications in photovoltaics and electronics and to a method for the production thereof. The nanowires are characterized in that they are obtained by a novel method using novel precursors. The precursors represent compounds, or mixtures of compounds, each having at least one direct Si—Si and/or Ge—Si and/or Ge—Ge bond, the substituents of which consist of halogen and/or hydrogen, and in the composition of which the atomic ratio of substituent:metalloid atoms is at least 1:1. | 08-22-2013 |
20130216465 | POLYSILANES OF MEDIUM CHAIN LENGTH AND A METHOD FOR THE PRODUCTION OF SAME - Polysilanes of medium chain length as pure compounds or a mixture of compounds, each having at least one direct Si—Si bond, the substituents of the polysilanes consisting exclusively of halogen and/or hydrogen, the medium chain length n thereof being greater than 3 and smaller than 50, and the atomic ratio of substituent:silicon in the composition thereof being at least 1:1. | 08-22-2013 |
20130243683 | METHOD FOR THE PRODUCTION OF HIGH-PURITY SILICON - A method for producing high-purity silicon is described. SiCl4 is produced from Si02-containing starting materials in a carbochlorination process, and the high-purity silicon is obtained from said SiCl4 in further steps of the method. No elemental silicon is added in any of the steps, resulting a particularly efficient and inexpensive method. | 09-19-2013 |
20130270102 | METHOD FOR PRODUCING FLUORINATED POLYSILANES - The invention relates to a method for producing fluorinated polysilanes. Hydrogen fluoride and/or hexafluorosilicic acid, which are obtained in particular during acid digestion of mineral phosphates in the production of phosphate fertilisers, are used for the production of SiF4. The SiF4 obtained is thermally or plasma-chemically converted to fluorinated polysilane. The method is particularly efficient and cost-effective. | 10-17-2013 |
20140093443 | STORAGE MATERIAL AND METHOD FOR OBTAINING H-SILANES THEREFROM - A storage material for obtaining H-silanes which is present in the form of a hydrogenated polysilane (HPS), as a pure compound or as a mixture of compounds having on average at least six direct Si—Si bonds, the substituenis of which predominantly consist of hydrogen and in the composition of which the atomic ratio of sabstitueot to silicon is at least 1:1. | 04-03-2014 |
20140335006 | METHOD FOR PRODUCING TETRAHALOSILANES - A method produces tetrahalosilanes (SiX | 11-13-2014 |