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Nogami, Tokyo
Asahiko Nogami, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20100210207 | WIRELESS COMMUNICATION DEVICE AND POWER RECEIVING DEVICE - A wireless communication device is provided and includes: a first communication processing unit performing communication in an electromagnetic induction system by using a first antenna unit; a second communication processing unit performing communication at higher speed than the first communication processing unit by a system or a communication frequency different from the electromagnetic induction system by using a second antenna unit; and a power generation unit generating power at least for performing communication operations from a carrier signal received by the first antenna unit. The power is generated in the power generation unit by switching a frequency resonance characteristic of the first antenna unit. | 08-19-2010 |
| 20100328045 | Noncontact communication apparatus and noncontact communication method - A noncontact communication apparatus is disclosed which includes: an antenna resonance circuit configured to have a coil for communicating with an opposite party through electromagnetic coupling; a changing block configured to change a Q-factor of the antenna resonance circuit; and a control block configured to control the antenna resonance circuit to transmit and receive data to and from the opposite party at one of a plurality of communication speeds prepared beforehand, the control block further controlling the changing block to reduce the Q-factor the higher the communication speed in use. | 12-30-2010 |
Atsushi Nogami, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20090066725 | INFORMATION-PROCESSING APPARATUS AND INFORMATION-PROCESSING METHOD - An information-processing apparatus determines whether a stimulation generation unit and a background virtual object contact each other based on position and orientation information about the stimulation generation unit and position and orientation information about the background virtual object. If it is determined that the stimulation generation unit and the background virtual object contact each other, the information-processing apparatus determines whether the stimulation generation unit is included within an attention range. The information-processing apparatus generates operation setting information for controlling an operation of the stimulation generation unit according to a result of the determination and outputs the generated operation setting information to the stimulation generation unit. | 03-12-2009 |
| 20100079263 | INFORMATION PROCESSING APPARATUS AND INFORMATION PROCESSING METHOD - Contact detection units ( | 04-01-2010 |
| 20110091069 | INFORMATION PROCESSING APPARATUS AND METHOD, AND COMPUTER-READABLE STORAGE MEDIUM - An information processing apparatus comprises: an extraction unit configured to extract a person from a video obtained by capturing a real space; a holding unit configured to hold a movement estimation rule corresponding to a partial region specified in the video; a determination unit configured to determine whether a region where the person has disappeared from the video or appeared in the video corresponds to the partial region; and an estimation unit configured to estimate, based on the movement estimation rule corresponding to the partial region determined to correspond, a movement of the person after the person has disappeared from the video or before the person has appeared in the video. | 04-21-2011 |
Hiroshi Nogami, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20100170442 | REMOTE PLASMA APPARATUS FOR PROCESSING SUBSTRATE WITH TWO TYPES OF GASES - In a plasma CVD apparatus, a plate formed with a plurality of perforated holes is arranged to separate a plasma generation region and a processing region. The aperture ratio of the perforated holes to the plate is not greater than five percent. Plasma including radicals and excited species is generated from an oxygen (O | 07-08-2010 |
Katsunori Nogami, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20100134956 | SOLID ELECTROLYTIC CAPACITOR AND METHOD OF MANUFACTURING THE SAME - A solid electrolytic capacitor with a high voltage resistance property and a method of manufacturing the same is disclosed. The solid electrolytic capacitor is formed including an electrolyte layer on an anode electrode formed of a metal oxide dielectric by a polymerization reaction in which the polymerizable monomer or the monomer solution is mixed with an oxidant, wherein a Lewis base having a steric hindrance group with a nitrogen atom or a Lewis base having a hydrophilic radical with a nitrogen atom is adhered to a surface of the dielectric or incorporated in the electrolyte layer. | 06-03-2010 |
Kousuke Nogami, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20090310493 | COMMUNICATION UNIT, COMMUNICATION SYSTEM, COMMUNICATION METHOD AND COMMUNICATION PROGRAM - A transmission-time measurement section ( | 12-17-2009 |
| 20090310498 | COMMUNICATION APPARATUS AND METHOD - A packetizer sectionalizes data to be transmitted into predetermined units and packetizes them into packets. A permuter permutes the order of the packets created by the packetizer based on a designated interleave length and sends out the packets to a network. A continuous loss information collector collects information on continuous packet loss occurring on the network. An interleave length determiner determines an interleave length based on the information on continuous packet loss, collected by the continuous loss information collector and designates the interleave length for the permuter. | 12-17-2009 |
| 20110161414 | CONTENT DELIVERY SYSTEM - This system | 06-30-2011 |
| 20110176444 | COMMUNICATION UNIT, COMMUNICATION SYSTEM, COMMUNICATION METHOD AND COMMUNICATION PROGRAM - A transmission-time measurement section ( | 07-21-2011 |
Masamichi Nogami, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20090252504 | Optical Receiver - Provided is an optical receiver which has a wide dynamic range characteristic for stably reproducing packets having different light receiving levels, and which is superior in high-speed responsiveness and consecutive same binary symbols tolerance. | 10-08-2009 |
| 20100067924 | OPTICAL RECEIVER - An optical receiver of wide-dynamic range characteristic that stably reproduces a burst signal having different light receiving levels. A preamplifier converts an output from a light receiving element into a voltage signal. A level detecting circuit includes: a first level detecting unit having a shorter time constant; and a second level detecting unit having a longer time constant and switching over to any of the level detecting units in response to a time constant switching signal to detect a voltage level of an output voltage signal output from the preamplifier. An amplifier variably controls conversion gain of the preamplifier based on the detecting result. A time constant switching control outputs the time constant switching signal to the level detecting unit based on the output voltage signal from the preamplifier, to select the first level detecting unit or the second detecting unit based on a number of consecutive identical digits being equal to, smaller, or larger than the predetermined number. | 03-18-2010 |
| 20100164575 | DATA REPRODUCTION CIRCUIT - Provided is a data recovery circuit including an input data phase detection circuit for outputting a gate signal synchronized with a rising phase of input data, a gated multiphase oscillator for instantly generating N-phase clocks based on the gate signal as a trigger, data discriminating and reproducing circuits for outputting sampled data of the input data which are synchronized with the clocks, a continuous clock generation circuit for generating a continuous clock which is a reference clock, continuous clock synchronization circuits for synchronizing the sampled data with the continuous clock and outputting the synchronized sampled data as phase synchronization data, and a phase selector for selecting the phase synchronization data having an optimum discrimination phase with the largest phase margin with respect to the input data and outputting the selected phase synchronization data as recovery data. | 07-01-2010 |
| 20100181937 | OPTICAL TRANSMITTER - An optical transmitter that can perform high-speed ON/OFF control of bias light that is input to an optical modulator. A high-speed current switching circuit performs a high-speed ON/OFF control of a drive current of an LD according to an LD ON/OFF signal. Thus, high-speed ON/OFF control of an optical output from the LD can be performed. A temperature detecting current generation circuit detects the ambient temperature, and generates the drive current adjusted according to the ambient temperature detected thereby so that the optical output from the LD is not affected by the ambient temperature. | 07-22-2010 |
| 20100189436 | POINT-TO-MULTIPOINT OPTICAL COMMUNICATION SYSTEM - Provided is a point-to-multipoint optical communication system capable of extending a transmission distance between a subscriber apparatus and a station apparatus without changing wavelengths of an upstream optical signal and a downstream optical signal, which are used in both of the apparatuses. The point-to-multipoint optical communication system includes, as a basic configuration thereof, an optical network for connecting one station apparatus ( | 07-29-2010 |
Mitsuhide Nogami, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20080237186 | PLASMA PROCESSING APPARATUS AND METHOD THEREOF - A blow-off part | 10-02-2008 |
| 20080295965 | PLASMA PROCESSING APPARATUS - An inner medium passage | 12-04-2008 |
Satoru Nogami, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20110315774 | WIRELESS TAG AND MANUFACTURING METHOD - A wireless tag includes a tag-inlet including an antenna pattern formed on a base and an IC chip connected to the antenna pattern on the base, and a flexible member configured to seal the tag-inlet inside the flexible member. In the wireless tag, the tag-inlet is sealed in the flexible member with folded, and the folded tag-inlet has a dielectric spacer formed of the flexible member between the folded tag-inlet. | 12-29-2011 |
Syouji Nogami, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20080303114 | Semiconductor device having P-N column layer and method for manufacturing the same - A semiconductor device is provided, which includes a substrate; a P-N column layer disposed on the substrate; a second conductivity type epitaxial layer disposed on the P-N column layer. The P-N column layer includes first conductivity type columns and second conductivity type columns, which are alternately arranged. Each column has a tapered shape. A portion of the first conductivity type column located around the substrate has a smaller impurity concentration than another portion of the first conductivity type column located around the second conductivity type epitaxial layer. A portion of the second conductivity type column located around the substrate has a larger impurity concentration than another portion of the first conductivity type column located around the second conductivity type epitaxial layer. | 12-11-2008 |
| 20090273102 | Semiconductor Substrate and Method for Manufacturing the Same - A semiconductor substrate is provided in which an alignment mark is formed that can be used for an aligment even after the formation of an impurity diffused layer by the planarization of an epitaxial film. | 11-05-2009 |
| 20110076830 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - A semiconductor substrate is provided in which an alignment mark is formed that can be used for an aligment even after the formation of an impurity diffused layer by the planarization of an epitaxial film. A trench is formed in an alignment region of an N | 03-31-2011 |
Takako Nogami, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20080199884 | Method For Measuring Protozoan Oocyst and Detecting Reagent - The present invention provides a method for measuring oocyst of protozoa, such as | 08-21-2008 |
Yoichi Nogami, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20080283882 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a compound semiconductor substrate; a buffer layer, a channel layer, and a Schottky junction forming layer sequentially formed on the compound semiconductor substrate, the buffer layer, the channel layer, and the Schottky junction forming layer each being a compound semiconductor; a source electrode and a drain electrode located on the Schottky junction forming layer; and a gate electrode disposed between the source and drain electrodes and forming a Schottky junction with the Schottky junction forming layer. The carrier density in the channel layer is inversely proportional to the third power of depth into the channel layer from a top surface of the channel layer, the channel layer has a uniform sheet carrier density, and the top surface of the channel layer has a dopant concentration in a range from 5.0×10 | 11-20-2008 |
| 20090014758 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - In a semiconductor device, a SiN first protective insulating film is formed on a semiconductor layer. A T-shaped gate electrode is formed on the semiconductor layer. A SiN second protective insulating film spreads in an umbrella shape from above the T-shaped gate electrode. A hollow region is formed between the two SiN films. The SiN films are coated with a SiN third protective insulating film with the hollow region remaining. | 01-15-2009 |
Youichi Nogami, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20110006351 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor substrate; an impurity-doped region at a top surface of the semiconductor substrate; an insulating region located around the impurity-doped region on the top surface of the semiconductor substrate; a gate electrode on the impurity-doped region; a first electrode and a second electrode located on the impurity-doped region, sandwiching the gate electrode; a first pad located on the insulating region and connected to the gate electrode; a second pad facing the first pad across the impurity-doped region, on the insulating region, and connected to the second electrode; and a conductor located between the first electrode and the second pad on the insulating region. | 01-13-2011 |