| Patent application number | Description | Published |
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| 20090310493 | COMMUNICATION UNIT, COMMUNICATION SYSTEM, COMMUNICATION METHOD AND COMMUNICATION PROGRAM - A transmission-time measurement section ( | 12-17-2009 |
| 20090310498 | COMMUNICATION APPARATUS AND METHOD - A packetizer sectionalizes data to be transmitted into predetermined units and packetizes them into packets. A permuter permutes the order of the packets created by the packetizer based on a designated interleave length and sends out the packets to a network. A continuous loss information collector collects information on continuous packet loss occurring on the network. An interleave length determiner determines an interleave length based on the information on continuous packet loss, collected by the continuous loss information collector and designates the interleave length for the permuter. | 12-17-2009 |
| 20110161414 | CONTENT DELIVERY SYSTEM - This system | 06-30-2011 |
| 20110176444 | COMMUNICATION UNIT, COMMUNICATION SYSTEM, COMMUNICATION METHOD AND COMMUNICATION PROGRAM - A transmission-time measurement section ( | 07-21-2011 |
| 20120014259 | COMMUNICATION SYSTEM - A communication system includes a transmission device configured to transmit a packet and a reception device configured to receive the packet. The reception device is equipped with a behavior information acquisition unit, a model specification information acquisition unit, and a model specification information transmission unit. The behavior information acquisition unit acquires behavior information representing the behavior of a packet before the packet reaches the reception device from the transmission device. The model specification information acquisition unit acquires model specification information for specifying a mathematical model representing the behaviors of a plurality of packets based on the acquired behavior information. The model specification information transmission unit transmits the acquired model specification information to the transmission device. The transmission device is equipped with a model specification information reception unit. The model specification information reception unit receives model specification information. | 01-19-2012 |
| 20120144000 | CONTENT DELIVERY SYSTEM - A content delivery system | 06-07-2012 |
| 20120198024 | CONTENT DISTRIBUTION SYSTEM - A content distribution system | 08-02-2012 |
| 20120203903 | CONTENT DISTRIBUTION SYSTEM - A content distribution system | 08-09-2012 |
| 20120311678 | CONTENT DELIVERY SYSTEM, CONTENT DELIVERY METHOD, APPLICATION SERVER SYSTEM, USER EQUIPMENT, AND RECORDING MEDIUM | 12-06-2012 |
| Patent application number | Description | Published |
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| 20090252504 | Optical Receiver - Provided is an optical receiver which has a wide dynamic range characteristic for stably reproducing packets having different light receiving levels, and which is superior in high-speed responsiveness and consecutive same binary symbols tolerance. | 10-08-2009 |
| 20100067924 | OPTICAL RECEIVER - An optical receiver of wide-dynamic range characteristic that stably reproduces a burst signal having different light receiving levels. A preamplifier converts an output from a light receiving element into a voltage signal. A level detecting circuit includes: a first level detecting unit having a shorter time constant; and a second level detecting unit having a longer time constant and switching over to any of the level detecting units in response to a time constant switching signal to detect a voltage level of an output voltage signal output from the preamplifier. An amplifier variably controls conversion gain of the preamplifier based on the detecting result. A time constant switching control outputs the time constant switching signal to the level detecting unit based on the output voltage signal from the preamplifier, to select the first level detecting unit or the second detecting unit based on a number of consecutive identical digits being equal to, smaller, or larger than the predetermined number. | 03-18-2010 |
| 20100164575 | DATA REPRODUCTION CIRCUIT - Provided is a data recovery circuit including an input data phase detection circuit for outputting a gate signal synchronized with a rising phase of input data, a gated multiphase oscillator for instantly generating N-phase clocks based on the gate signal as a trigger, data discriminating and reproducing circuits for outputting sampled data of the input data which are synchronized with the clocks, a continuous clock generation circuit for generating a continuous clock which is a reference clock, continuous clock synchronization circuits for synchronizing the sampled data with the continuous clock and outputting the synchronized sampled data as phase synchronization data, and a phase selector for selecting the phase synchronization data having an optimum discrimination phase with the largest phase margin with respect to the input data and outputting the selected phase synchronization data as recovery data. | 07-01-2010 |
| 20100181937 | OPTICAL TRANSMITTER - An optical transmitter that can perform high-speed ON/OFF control of bias light that is input to an optical modulator. A high-speed current switching circuit performs a high-speed ON/OFF control of a drive current of an LD according to an LD ON/OFF signal. Thus, high-speed ON/OFF control of an optical output from the LD can be performed. A temperature detecting current generation circuit detects the ambient temperature, and generates the drive current adjusted according to the ambient temperature detected thereby so that the optical output from the LD is not affected by the ambient temperature. | 07-22-2010 |
| 20100189436 | POINT-TO-MULTIPOINT OPTICAL COMMUNICATION SYSTEM - Provided is a point-to-multipoint optical communication system capable of extending a transmission distance between a subscriber apparatus and a station apparatus without changing wavelengths of an upstream optical signal and a downstream optical signal, which are used in both of the apparatuses. The point-to-multipoint optical communication system includes, as a basic configuration thereof, an optical network for connecting one station apparatus ( | 07-29-2010 |
| Patent application number | Description | Published |
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| 20080303114 | Semiconductor device having P-N column layer and method for manufacturing the same - A semiconductor device is provided, which includes a substrate; a P-N column layer disposed on the substrate; a second conductivity type epitaxial layer disposed on the P-N column layer. The P-N column layer includes first conductivity type columns and second conductivity type columns, which are alternately arranged. Each column has a tapered shape. A portion of the first conductivity type column located around the substrate has a smaller impurity concentration than another portion of the first conductivity type column located around the second conductivity type epitaxial layer. A portion of the second conductivity type column located around the substrate has a larger impurity concentration than another portion of the first conductivity type column located around the second conductivity type epitaxial layer. | 12-11-2008 |
| 20090273102 | Semiconductor Substrate and Method for Manufacturing the Same - A semiconductor substrate is provided in which an alignment mark is formed that can be used for an aligment even after the formation of an impurity diffused layer by the planarization of an epitaxial film. | 11-05-2009 |
| 20110076830 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - A semiconductor substrate is provided in which an alignment mark is formed that can be used for an aligment even after the formation of an impurity diffused layer by the planarization of an epitaxial film. A trench is formed in an alignment region of an N | 03-31-2011 |
| 20120032312 | SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE - A semiconductor substrate which allows desired electrical characteristics to be more easily acquired, a semiconductor device of the same, and a method of producing the semiconductor substrate. The method of producing this semiconductor substrate is provided with: a first epitaxial layer forming step (S | 02-09-2012 |
| Patent application number | Description | Published |
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| 20080283882 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a compound semiconductor substrate; a buffer layer, a channel layer, and a Schottky junction forming layer sequentially formed on the compound semiconductor substrate, the buffer layer, the channel layer, and the Schottky junction forming layer each being a compound semiconductor; a source electrode and a drain electrode located on the Schottky junction forming layer; and a gate electrode disposed between the source and drain electrodes and forming a Schottky junction with the Schottky junction forming layer. The carrier density in the channel layer is inversely proportional to the third power of depth into the channel layer from a top surface of the channel layer, the channel layer has a uniform sheet carrier density, and the top surface of the channel layer has a dopant concentration in a range from 5.0×10 | 11-20-2008 |
| 20090014758 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - In a semiconductor device, a SiN first protective insulating film is formed on a semiconductor layer. A T-shaped gate electrode is formed on the semiconductor layer. A SiN second protective insulating film spreads in an umbrella shape from above the T-shaped gate electrode. A hollow region is formed between the two SiN films. The SiN films are coated with a SiN third protective insulating film with the hollow region remaining. | 01-15-2009 |
| 20120007153 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a compound semiconductor substrate; a buffer layer, a channel layer, and a Schottky junction forming layer sequentially disposed on the compound semiconductor substrate, the buffer layer, the channel layer, and the Schottky junction forming layer each being compound semiconductor materials; a source electrode and a drain electrode located on the Schottky junction forming layer; and a gate electrode disposed between the source and drain electrodes and forming a Schottky junction with the Schottky junction forming layer. The dopant impurity concentration in the channel layer is inversely proportional to the third power of depth into the channel layer from a top surface of the channel layer. The gate electrode has a gate length in a range from 0.2 μm to 0.6 μm. | 01-12-2012 |
| 20120217557 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor substrate of a compound semiconductor material; a buffer layer, a channel layer, and a Schottky junction forming layer sequentially disposed on the semiconductor substrate, the buffer layer, the channel layer, and the Schottky junction forming layer each being compound semiconductor materials; a source electrode and a drain electrode located on the Schottky junction forming layer; and a gate electrode disposed between the source and drain electrodes and forming a Schottky junction with the Schottky junction forming layer. The carrier density in the channel layer varies with distance from a top surface of the channel layer and is inversely proportional to the third power of depth into the channel layer from the top surface of the channel layer. The buffer layer has a lower electron affinity than the channel layer and is a different compound semiconductor material from the channel layer. | 08-30-2012 |
