| Patent application number | Description | Published |
|---|
| 20080314871 | HIGH RESOLUTION PLASMA ETCH - A method for fabrication of microscopic structures that uses a beam process, such as beam-induced decomposition of a precursor, to deposit a mask in a precise pattern and then a selective, plasma beam is applied, comprising the steps of first creating a protective mask upon surface portions of a substrate using a beam process such as an electron beam, focused ion beam (FIB), or laser process, and secondly etching unmasked substrate portions using a selective plasma beam etch process. Optionally, a third step comprising the removal of the protective mask may be performed with a second, materially oppositely selective plasma beam process. | 12-25-2008 |
| 20090309018 | MULTI-SOURCE PLASMA FOCUSED ION BEAM SYSTEM - The present invention provides a plasma ion beam system that includes multiple gas sources and that can be used for performing multiple operations using different ion species to create or alter submicron features of a work piece. The system preferably uses an inductively coupled, magnetically enhanced ion beam source, suitable in conjunction with probe-forming optics sources to produce ion beams of a wide variety of ions without substantial kinetic energy oscillations induced by the source, thereby permitting formation of a high resolution beam. | 12-17-2009 |
| 20100294648 | Magnetically Enhanced, Inductively Coupled Plasma Source for a Focused Ion Beam System - The present invention provides an inductively coupled, magnetically enhanced ion beam source, suitable to be used in conjunction with probe-forming optics to produce an ion beam without kinetic energy oscillations induced by the source. | 11-25-2010 |
| 20110117748 | Localized Plasma Processing - A method of localized plasma processing improves processing speed and reduces work piece damage compared to charged particle beam deposition and etching. In one embodiment, a plasma jet exits a plasma generating chamber and activates a reactive gas. A jet of plasma and reactive gas impacts and processes the work piece. Because the plasma and the ions in the reactive gas can have low kinetic energy, there can be little or no surface damage. This is particularly useful for deposition processes. When it is desired to etch material, the reactive ions can be more energetic to enhance etching. | 05-19-2011 |
| 20110163068 | Multibeam System - A multibeam system in which a charged particle beam and one or more additional beams can be directed to the target within a single vacuum chamber. A first beam colunm preferably produces a beam for rapid processing, and a second beam column produces a beam for more precise processing. A third beam column can be used to produce a beam useful for forming an image of the sample while producing little or no change in the sample. | 07-07-2011 |
| 20120080407 | Multi-Source Plasma Focused Ion Beam System - The present invention provides a plasma ion beam system that includes multiple gas sources and that can be used for performing multiple operations using different ion species to create or alter submicron features of a work piece. The system preferably uses an inductively coupled, magnetically enhanced ion beam source, suitable in conjunction with probe-forming optics sources to produce ion beams of a wide variety of ions without substantial kinetic energy oscillations induced by the source, thereby permitting formation of a high resolution beam. | 04-05-2012 |
| 20120280136 | Plasma Source for Charged Particle Beam System - An inductively coupled plasma source for a focused charged particle beam system includes a dielectric liquid that insulates and cools the plasma chamber. A flow restrictor at an electrical potential that is a large fraction of the plasma potential reducing arcing because the voltage drop in the gas occurs primarily at relative high pressure. | 11-08-2012 |
| 20120319000 | MAGNETICALLY ENHANCED, INDUCTIVELY COUPLED PLASMA SOURCE FOR A FOCUSED ION BEAM SYSTEM - The present invention provides an inductively coupled, magnetically enhanced ion beam source, suitable to be used in conjunction with probe-forming optics to produce an ion beam without kinetic energy oscillations induced by the source. | 12-20-2012 |
