Patent application number | Description | Published |
20090200608 | SEMICONDUCTOR DEVICE - To attain reduction in size of a semiconductor device having a power transistor and an SBD, a semiconductor device according to the present invention comprises a first region and a second region formed on a main surface of a semiconductor substrate; plural first conductors and plural second conductors formed in the first and second regions respectively; a first semiconductor region and a second semiconductor region formed between adjacent first conductors in the first region, the second semiconductor region lying in the first semiconductor region and having a conductivity type opposite to that of the first semiconductor region; a third semiconductor region formed between adjacent second conductors in the second region, the third semiconductor region having the same conductivity type as that of the second semiconductor region and being lower in density than the second semiconductor region; a metal formed on the semiconductor substrate in the second region, the third semiconductor region having a metal contact region for contact with the metal, the metal being electrically connected to the second semiconductor region, and a center-to-center distance between adjacent first conductors in the first region being smaller than that between adjacent second conductors in the second region. | 08-13-2009 |
20100148247 | SEMICONDUCTOR DEVICE - A semiconductor device includes a gate electrode GE electrically connected to a gate portion which is made of a polysilicon film provided in the inside of a plurality of grooves formed in a striped form along the direction of T of a chip region CA wherein the gate electrode GE is formed as a film at the same layer level as a source electrode SE electrically connected to a source region formed between adjacent stripe-shaped grooves and the gate electrode GE is constituted of a gate electrode portion G | 06-17-2010 |
20110024802 | SEMICONDUCTOR DEVICE - To attain reduction in size of a semiconductor device having a power transistor and an SBD, a semiconductor device according to the present invention comprises a first region and a second region formed on a main surface of a semiconductor substrate; plural first conductors and plural second conductors formed in the first and second regions respectively; a first semiconductor region and a second semiconductor region formed between adjacent first conductors in the first region, the second semiconductor region lying in the first semiconductor region and having a conductivity type opposite to that of the first semiconductor region; a third semiconductor region formed between adjacent second conductors in the second region, the third semiconductor region having the same conductivity type as that of the second semiconductor region and being lower in density than the second semiconductor region; a metal formed on the semiconductor substrate in the second region, the third semiconductor region having a metal contact region for contact with the metal, the metal being electrically connected to the second semiconductor region, and a center-to-center distance between adjacent first conductors in the first region being smaller than that between adjacent second conductors in the second region. | 02-03-2011 |
20110079842 | SEMICONDUCTOR DEVICE - A semiconductor device includes a gate electrode GE electrically connected to a gate portion which is made of a polysilicon film provided in the inside of a plurality of grooves formed in a striped form along the direction of T of a chip region CA wherein the gate electrode GE is formed as a film at the same layer level as a source electrode SE electrically connected to a source region formed between adjacent stripe-shaped grooves and the gate electrode GE is constituted of a gate electrode portion G | 04-07-2011 |
20110309437 | SEMICONDUCTOR DEVICE - To attain reduction in size of a semiconductor device having a power transistor and an SBD, a semiconductor device according to the present invention comprises a first region and a second region formed on a main surface of a semiconductor substrate; plural first conductors and plural second conductors formed in the first and second regions respectively; a first semiconductor region and a second semiconductor region formed between adjacent first conductors in the first region, the second semiconductor region lying in the first semiconductor region and having a conductivity type opposite to that of the first semiconductor region; a third semiconductor region formed between adjacent second conductors in the second region, the third semiconductor region having the same conductivity type as that of the second semiconductor region and being lower in density than the second semiconductor region; a metal formed on the semiconductor substrate in the second region, the third semiconductor region having a metal contact region for contact with the metal, the metal being electrically connected to the second semiconductor region, and a center-to-center distance between adjacent first conductors in the first region being smaller than that between adjacent second conductors in the second region. | 12-22-2011 |
20120175698 | SEMICONDUCTOR DEVICE - A semiconductor device which includes a gate electrode electrically connected to a gate portion made of a polysilicon film provided inside of a plurality of grooves formed in a striped form along a direction of a chip region. The gate electrode is formed as a film at the same layer level as a source electrode electrically connected to a source region formed between adjacent stripe-shaped grooves. The gate electrode is constituted of a gate electrode portion formed along a periphery of the chip region and a gate finger portion arranged to divide the chip region into halves. The source electrode is constituted of an upper portion and a lower portion relative to the gate finger portion, and the gate electrode and the source electrode are connected to a lead frame via a bump electrode. | 07-12-2012 |
20120280315 | SEMICONDUCTOR DEVICE - A semiconductor device for use in a power supply circuit has first and second MOSFETS. The source-drain path of one of the MOSFETS are coupled to the source-drain path of the other, and a load element is coupled to a connection node of the source-drain paths. The second MOSFET is formed on a semiconductor substrate with a Schottky barrier diode. First gate electrodes of the second MOSFET are formed in trenches in a first region of the semiconductor substrate, while second gate electrodes of the second MOSFET are formed in trenches in a second region of the semiconductor substrate. The first and second gate electrodes are electrically connected together. Portions of the Schottky barrier diode are formed between adjacent ones of the second gate electrodes. A center-to-center spacing between adjacent first gate electrodes is smaller than a center-to-center spacing between adjacent second gate electrodes. | 11-08-2012 |
20130214378 | SEMICONDUCTOR DEVICE INCLUDING A MOSFET AND SCHOTTKY JUNCTION - A semiconductor device for use in a power supply circuit has first and second MOSFETS. The source-drain path of one of the MOSFETS are coupled to the source-drain path of the other, and a load element is coupled to a connection node of the source-drain paths. The second MOSFET is formed on a semiconductor substrate with a Schottky barrier diode. First gate electrodes of the second MOSFET are formed in trenches in a first region of the semiconductor substrate, while second gate electrodes of the second MOSFET are formed in trenches in a second region of the semiconductor substrate. The first and second gate electrodes are electrically connected together. Portions of the Schottky barrier diode are formed between adjacent ones of the second gate electrodes. A center-to-center spacing between adjacent first gate electrodes is smaller than a center-to-center spacing between adjacent second gate electrodes. | 08-22-2013 |
20150028400 | SEMICONDUCTOR DEVICE - A semiconductor device includes a gate electrode GE electrically connected to a gate portion which is made of a polysilicon film provided in the inside of a plurality of grooves formed in a striped form along the direction of T of a chip region CA wherein the gate electrode GE is formed as a film at the same layer level as a source electrode SE electrically connected to a source region formed between adjacent stripe-shaped grooves and the gate electrode GE is constituted of a gate electrode portion G1 formed along a periphery of the chip region CA and a gate finger portion G2 arranged so that the chip region CA is divided into halves along the direction of X. The source electrode SE is constituted of an upper portion and a lower portion, both relative to the gate finger portion G2, and the gate electrode GE and the source electrode SE are connected to a lead frame via a bump electrode. | 01-29-2015 |
20150054069 | SEMICONDUCTOR DEVICE INCLUDING A MOSFET - A semiconductor device for use in a power supply circuit has first and second MOSFETS. The source-drain path of one of the MOSFETS are coupled to the source-drain path of the other, and a load element is coupled to a connection node of the source-drain paths. The second MOSFET is formed on a semiconductor substrate with a Schottky barrier diode. First gate electrodes of the second MOSFET are formed in trenches in a first region of the semiconductor substrate, while second gate electrodes of the second MOSFET are formed in trenches in a second region of the semiconductor substrate. The first and second gate electrodes are electrically connected together. Portions of the Schottky barrier diode are formed between adjacent ones of the second gate electrodes. A center-to-center spacing between adjacent first gate electrodes is smaller than a center-to-center spacing between adjacent second gate electrodes. | 02-26-2015 |