| Patent application number | Description | Published |
|---|
| 20090189248 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device comprises an active region formed in a semiconductor substrate and a gate electrode formed on the active region via a gate insulating film formed on a surface of the active region. A peripheral portion of the gate electrode and a peripheral portion of the active region overlap each other at a position where the active region is not divided by the gate electrode when viewed in plan view, thus forming an overlap region. | 07-30-2009 |
| 20100196189 | HIGH-STRENGTH STEEL SHEET - A high-strength steel sheet has high stretch flangeability after working and corrosion resistance after painting. The steel sheet contains, on the basis of mass percent, C: 0.02% to 0.20%, Si: 0.3% or less, Mn: 0.5% to 2.5%, P: 0.06% or less, S: 0.01% or less, Al: 0.1% or less, Ti: 0.05% to 0.25%, and V: 0.05% to 0.25%, the remainder being Fe and incidental impurities. The steel sheet has a substantially ferritic single phase, the ferritic single phase containing precipitates having a size of less than 20 nm, the precipitates containing 200 to 1750 mass ppm Ti and 150 to 1750 mass ppm V, V dissolved in solid solution being 200 or more but less than 1750 mass ppm. | 08-05-2010 |
| 20100282376 | ULTRA SOFT HIGH CARBON HOT ROLLED STEEL SHEET AND METHOD FOR MANUFACTURING SAME - An ultra soft high carbon hot-rolled steel sheet has excellent workability. The steel sheet is a high carbon hot-rolled steel sheet containing 0.2 to 0.7% C, and has a structure in which mean grain size of ferrite is 20 μm or larger, the volume percentage of ferrite grains having 10 μm or smaller size is 20% or less, mean diameter of carbide is in a range from 0.10 μm to smaller than 2.0 μm, the percentage of carbide grains having 5 or more of aspect ratio is 15% or less, and the contact ratio of carbide is 20% or less. | 11-11-2010 |
| 20110018066 | Semiconductor device and method of manufacturing the same - A semiconductor device includes an antifuse element. The semiconductor device includes a first well of a first conductivity type disposed in a semiconductor substrate; a first insulating film on the first well; a first conductive film of the first conductivity type on the first insulating film; and an impurity-introduced region of the first conductivity type. The impurity-introduced region of the first conductivity type in the first well is higher in impurity concentration than the first well. The impurity-introduced region includes a first portion that faces toward the first conductive film through the first insulating film. | 01-27-2011 |
| 20120018062 | METHOD OF HOT-ROLLED THIN STEEL SHEET WITH EXCELLENT FORMABILITY AND EXCELLENT STRENGTH AND TOUGHNESS AFTER HEAT TREATMENT - A method of manufacturing a hot-rolled thin steel sheet includes: hot-rolling a steel base material having a composition containing, as mass %, C: 0.10 to 0.20%, Si: 0.01 to 1.0%, Mn: 0.5 to 2.0%, P: 0.03% or less, S: 0.01% or less, Al: 0.01 to 0.10%, N: 0.005% or less, Ti: 0.01 to 0.15%, B: 0.0005 to 0.0050%, the balance of Fe, and unavoidable impurities at a finishing temperature of finish rolling of 820 to 880° C. to produce a hot-rolled steel sheet with a thickness of less than 6 mm; cooling the hot-rolled steel sheet to a temperature range on a surface of the hot-rolled steel sheet to 550 to 650° C. at a surface cooling rate of 15 to 50° C. per second; and coiling the hot-rolled steel sheet at the temperature range. | 01-26-2012 |
| 20120018841 | SEMICONDUCTOR DEVICE - A semiconductor device comprises an active region formed in a semiconductor substrate and a gate electrode formed on the active region via a gate insulating film formed on a surface of the active region. A peripheral portion of the gate electrode and a peripheral portion of the active region overlap each other at a position where the active region is not divided by the gate electrode when viewed in plan view, thus forming an overlap region. | 01-26-2012 |
