Patent application number | Description | Published |
20090189248 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device comprises an active region formed in a semiconductor substrate and a gate electrode formed on the active region via a gate insulating film formed on a surface of the active region. A peripheral portion of the gate electrode and a peripheral portion of the active region overlap each other at a position where the active region is not divided by the gate electrode when viewed in plan view, thus forming an overlap region. | 07-30-2009 |
20100196189 | HIGH-STRENGTH STEEL SHEET - A high-strength steel sheet has high stretch flangeability after working and corrosion resistance after painting. The steel sheet contains, on the basis of mass percent, C: 0.02% to 0.20%, Si: 0.3% or less, Mn: 0.5% to 2.5%, P: 0.06% or less, S: 0.01% or less, Al: 0.1% or less, Ti: 0.05% to 0.25%, and V: 0.05% to 0.25%, the remainder being Fe and incidental impurities. The steel sheet has a substantially ferritic single phase, the ferritic single phase containing precipitates having a size of less than 20 nm, the precipitates containing 200 to 1750 mass ppm Ti and 150 to 1750 mass ppm V, V dissolved in solid solution being 200 or more but less than 1750 mass ppm. | 08-05-2010 |
20100282376 | ULTRA SOFT HIGH CARBON HOT ROLLED STEEL SHEET AND METHOD FOR MANUFACTURING SAME - An ultra soft high carbon hot-rolled steel sheet has excellent workability. The steel sheet is a high carbon hot-rolled steel sheet containing 0.2 to 0.7% C, and has a structure in which mean grain size of ferrite is 20 μm or larger, the volume percentage of ferrite grains having 10 μm or smaller size is 20% or less, mean diameter of carbide is in a range from 0.10 μm to smaller than 2.0 μm, the percentage of carbide grains having 5 or more of aspect ratio is 15% or less, and the contact ratio of carbide is 20% or less. | 11-11-2010 |
20110018066 | Semiconductor device and method of manufacturing the same - A semiconductor device includes an antifuse element. The semiconductor device includes a first well of a first conductivity type disposed in a semiconductor substrate; a first insulating film on the first well; a first conductive film of the first conductivity type on the first insulating film; and an impurity-introduced region of the first conductivity type. The impurity-introduced region of the first conductivity type in the first well is higher in impurity concentration than the first well. The impurity-introduced region includes a first portion that faces toward the first conductive film through the first insulating film. | 01-27-2011 |
20120018062 | METHOD OF HOT-ROLLED THIN STEEL SHEET WITH EXCELLENT FORMABILITY AND EXCELLENT STRENGTH AND TOUGHNESS AFTER HEAT TREATMENT - A method of manufacturing a hot-rolled thin steel sheet includes: hot-rolling a steel base material having a composition containing, as mass %, C: 0.10 to 0.20%, Si: 0.01 to 1.0%, Mn: 0.5 to 2.0%, P: 0.03% or less, S: 0.01% or less, Al: 0.01 to 0.10%, N: 0.005% or less, Ti: 0.01 to 0.15%, B: 0.0005 to 0.0050%, the balance of Fe, and unavoidable impurities at a finishing temperature of finish rolling of 820 to 880° C. to produce a hot-rolled steel sheet with a thickness of less than 6 mm; cooling the hot-rolled steel sheet to a temperature range on a surface of the hot-rolled steel sheet to 550 to 650° C. at a surface cooling rate of 15 to 50° C. per second; and coiling the hot-rolled steel sheet at the temperature range. | 01-26-2012 |
20120018841 | SEMICONDUCTOR DEVICE - A semiconductor device comprises an active region formed in a semiconductor substrate and a gate electrode formed on the active region via a gate insulating film formed on a surface of the active region. A peripheral portion of the gate electrode and a peripheral portion of the active region overlap each other at a position where the active region is not divided by the gate electrode when viewed in plan view, thus forming an overlap region. | 01-26-2012 |
20120091520 | SEMICONDUCTOR DEVICE, METHOD FOR FORMING THE SAME, AND DATA PROCESSING SYSTEM - A semiconductor device includes a semiconductor substrate, a first interlayer insulating film over the semiconductor substrate, a first interconnect over the first interlayer insulating film, and a via plug penetrating the semiconductor substrate and the first interlayer insulating film. The via plug is coupled to the first interconnect. | 04-19-2012 |
20120256300 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A semiconductor device includes: a plurality of semiconductor chips stacked on each other, each of the plurality of semiconductor chips having a semiconductor substrate and a wiring layer; a through electrode penetrating the semiconductor substrate in a thickness direction and electrically connected to each other between the semiconductor chips adjacent to each other; a conductor penetrating the semiconductor substrate in the thickness direction and not electrically connected between the other semiconductor chips; and an insulating separator penetrating the semiconductor substrate in the thickness direction and formed in a shape of a ring surrounding the conductor. | 10-11-2012 |
20130020721 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a semiconductor substrate, a through silicon via that penetrates through the semiconductor substrate in a thickness direction thereof, a first insulating region, a second insulating region formed below the first principal surface of the semiconductor substrate, and an isolation region made of an insulating material buried in a second trench formed below the first principal surface of the semiconductor substrate. The first insulating region is made of an insulating material buried in a first groove that surrounds the through silicon via and penetrates through the semiconductor substrate from a first principal surface thereof to a second principal surface thereof. The second insulating region is deeper than the second trench and shallower than the first trench. | 01-24-2013 |
20130026599 | SEMICONDUCTOR DEVICE - A semiconductor device includes an isolation portion penetrating a semiconductor substrate from a first surface to a second surface positioned opposite the first surface. The isolation portion includes a first insulating film and a second insulating film. The first insulating film has a slit portion at a side of the first surface and the slit portion is buried with the second insulating film. The semiconductor device further includes an electrode penetrating the semiconductor substrate that is surrounded by the isolation portion. | 01-31-2013 |
20130061989 | HIGH STRENGTH HOT-ROLLED STEEL SHEET HAVING EXCELLENT STRETCH FLANGEABILITY AND FATIGUE RESISTANCE AND METHOD FOR MANUFACTURING THE SAME - A high strength hot-rolled steel sheet has a tensile strength of not less than 780 MPa and exhibits excellent stretch flangeability and excellent fatigue resistance. A steel has a composition containing C at 0.05 to 0.15%, Si at 0.2 to 1.2%, Mn at 1.0 to 2.0%, P at not more than 0.04%, S at not more than 0.005%, Ti at 0.05 to 0.15%, Al at 0.005 to 0.10% and N at not more than 0.007%. | 03-14-2013 |
20130313689 | SEMICONDUCTOR DEVICE - In a connecting portion between an interconnection and a first bump which is a part of a through electrode penetrating a semiconductor chip and which penetrates a semiconductor substrate, a protruding portion protruding from the interconnection to the side of the first bump is provided. The protruding portion may be made of an insulating material and may be made of a conductive material. | 11-28-2013 |
20140183705 | SEMICONDUCTOR DEVICE WITH THROUGH SILICON VIA AND ALIGNMENT MARK - A semiconductor device includes: a plurality of semiconductor chips stacked on each other, each of the plurality of semiconductor chips having a semiconductor substrate and a wiring layer; a through electrode penetrating the semiconductor substrate in a thickness direction and electrically connected to each other between the semiconductor chips adjacent to each other; a conductor penetrating the semiconductor substrate in the thickness direction and not electrically connected between the other semiconductor chips; and an insulating separator penetrating the semiconductor substrate in the thickness direction and formed in a shape of a ring surrounding the conductor. | 07-03-2014 |